KR930008964A - 포토레지스트조성물 및 포토레지스트의 노광방법 - Google Patents

포토레지스트조성물 및 포토레지스트의 노광방법 Download PDF

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Publication number
KR930008964A
KR930008964A KR1019920019300A KR920019300A KR930008964A KR 930008964 A KR930008964 A KR 930008964A KR 1019920019300 A KR1019920019300 A KR 1019920019300A KR 920019300 A KR920019300 A KR 920019300A KR 930008964 A KR930008964 A KR 930008964A
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KR
South Korea
Prior art keywords
photoresist
infrared
exposure method
exposure
focus detection
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KR1019920019300A
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English (en)
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KR100218768B1 (ko
Inventor
요이찌 오쓰까
Original Assignee
오가 노리오
소니 가부시기가이샤
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Publication of KR930008964A publication Critical patent/KR930008964A/ko
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Publication of KR100218768B1 publication Critical patent/KR100218768B1/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70583—Speckle reduction, e.g. coherence control or amplitude/wavefront splitting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/145—Infrared

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

적외흡수염료를 함유하는 포토레지스트조성물로 함으로써, 및 포토레지스트의 노광에 있어서, 적외광(31)에 의해 포커스를 정하고, 또한 그 포토레지스트로서, 적외흡수염료를 함유하는 포토레지스트를 사용하는 노광방법으로 함으로써, 2차 반사등으로 의해 포커스검출계가 영향을 받지 않고, 즉 기판(1a), (1b)이 적외선반사성에서도 적외선투과성에서도 거기서 투과 또는 반사한 광에 의해 포커스검출계가 영향을 받지 않으며, 따라서 정밀도가 양호한 포커스검출에 의해 양호한 레지스트패턴을 형성할 수 있는 구성으로 하였다.

Description

포토레지스트조성물 및 포토레지스트의 노광방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제8도는 실시예1의 포토레지스트의 흡수특성도,
제9도는 실시예2의 포토레지스트의 흡수특성도,
제10도는 실시예3의 포토레지스트의 흡수특성도,
제11도는 실시예4의 포토레지스트의 흡수특성도.

Claims (3)

  1. 노광하여 현상함으로써 레지스트패턴을 형성하기 위해 사용하는 포토레지스트조성물로서, 적외흡수염료를 함유하는 것을 특징으로 하는 포토레지스트조성물.
  2. 포토레지스트의 노광에 있어서, 적외광에 의해 포커스를 정하는 포토레지스트의 노광방법으로서, 상기 포토레지스트로서 적외흡수염료를 함유하는 포토레지스트를 사용하는 것을 특징으로 하는 포토레지스트의 노광방법.
  3. 제2항에 있어서, 포토레지스트가 적외광에 대하여 투명한 기판상에 형성된 것을 특징으로 하는 포토레지스트의 노광방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920019300A 1991-10-31 1992-10-21 포토레지스트조성물 및 포토레지스트의 노광방법 KR100218768B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3313692A JPH07146551A (ja) 1991-10-31 1991-10-31 フォトレジスト組成物及びフォトレジストの露光方法
JP91-313,692 1991-10-31

Publications (2)

Publication Number Publication Date
KR930008964A true KR930008964A (ko) 1993-05-22
KR100218768B1 KR100218768B1 (ko) 1999-09-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920019300A KR100218768B1 (ko) 1991-10-31 1992-10-21 포토레지스트조성물 및 포토레지스트의 노광방법

Country Status (3)

Country Link
US (1) US5643700A (ko)
JP (1) JPH07146551A (ko)
KR (1) KR100218768B1 (ko)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
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US6391512B1 (en) * 1995-10-20 2002-05-21 Konica Corporation Image forming material and image forming method
DE69701266T2 (de) * 1996-03-11 2000-06-08 Fuji Photo Film Co Ltd Negativarbeitendes Bildaufzeichnungsmaterial
US6291110B1 (en) * 1997-06-27 2001-09-18 Pixelligent Technologies Llc Methods for transferring a two-dimensional programmable exposure pattern for photolithography
US6440638B2 (en) 1998-09-28 2002-08-27 International Business Machines Corp. Method and apparatus for resist planarization
US6174407B1 (en) 1998-12-03 2001-01-16 Lsi Logic Corporation Apparatus and method for detecting an endpoint of an etching process by transmitting infrared light signals through a semiconductor wafer
US6136719A (en) * 1999-04-30 2000-10-24 Lsi Logic Corporation Method and arrangement for fabricating a semiconductor device
US20050257709A1 (en) * 2003-08-28 2005-11-24 Tony Mule Systems and methods for three-dimensional lithography and nano-indentation
JP2005277284A (ja) * 2004-03-26 2005-10-06 Seiko Epson Corp 露光方法及び半導体装置の製造方法
JP4777313B2 (ja) * 2007-08-16 2011-09-21 富士フイルム株式会社 光学読取用の情報記録媒体の製造方法
JP5768410B2 (ja) * 2010-04-22 2015-08-26 信越化学工業株式会社 近赤外光吸収膜形成材料及び積層膜
JP5782797B2 (ja) 2010-11-12 2015-09-24 信越化学工業株式会社 近赤外光吸収色素化合物、近赤外光吸収膜形成材料、及びこれにより形成される近赤外光吸収膜
US8722307B2 (en) 2011-05-27 2014-05-13 International Business Machines Corporation Near-infrared absorptive layer-forming composition and multilayer film comprising near-infrared absorptive layer

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4822718A (en) * 1982-09-30 1989-04-18 Brewer Science, Inc. Light absorbing coating
JPH0820734B2 (ja) * 1988-08-11 1996-03-04 富士写真フイルム株式会社 感光性組成物及びそれを用いた光重合性組成物
JPH0382012A (ja) * 1989-08-24 1991-04-08 Nec Corp レジストパターン線幅制御方法
US5147758A (en) * 1991-02-19 1992-09-15 E. I. Du Pont De Nemours And Company Red sensitive photopolymerizable compositions

Also Published As

Publication number Publication date
JPH07146551A (ja) 1995-06-06
KR100218768B1 (ko) 1999-09-01
US5643700A (en) 1997-07-01

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