KR920015524A - 성형 화합물에 대한 접착력을 개선하기 위한 집적 회로 다이 및 리드 프레임에 물질을 인가하는 방법 및 장치 - Google Patents

성형 화합물에 대한 접착력을 개선하기 위한 집적 회로 다이 및 리드 프레임에 물질을 인가하는 방법 및 장치 Download PDF

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KR920015524A
KR920015524A KR1019920000078A KR920000078A KR920015524A KR 920015524 A KR920015524 A KR 920015524A KR 1019920000078 A KR1019920000078 A KR 1019920000078A KR 920000078 A KR920000078 A KR 920000078A KR 920015524 A KR920015524 A KR 920015524A
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adhesion
integrated circuit
adhesion enhancing
enhancing material
hexamethyldisilagen
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지. 맥케나 로버트
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윌리엄 이. 힐러
텍사스 인스트루먼츠 인코포레이티드
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Publication of KR920015524A publication Critical patent/KR920015524A/ko

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    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B5/00—Electrostatic spraying apparatus; Spraying apparatus with means for charging the spray electrically; Apparatus for spraying liquids or other fluent materials by other electric means
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    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3142—Sealing arrangements between parts, e.g. adhesion promotors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
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    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
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    • H01L2924/11—Device type
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  • Microelectronics & Electronic Packaging (AREA)
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  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
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Abstract

내용 없음

Description

성형 화합물에 대한 접착력을 개선하기 위한 집적 회로 다이 및 리드 프레임에 물질을 인가하는 방법 및 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 플라스틱 성형 전에 HMDS의 분무 하전 입자를 다이 및 리드 프레임 표면에 인가하는 집적 회로 제조의 개선된 방법을 제공하기 위한 장치의 부분적 블럭도, 제2도는 제1도의 장치에 의해 실행된 집적 회로 제조의 개선된 방법의 프로세스 흐름도, 제3도는 제2도의 제조 프로세스에 따라 개선된 집적 회로 제품의 도면.

Claims (13)

  1. 전자 구성 부품을 제조하는 방법에 있어서, 접착력 강화 물질을 분무하기 위해 동작가능한 도포기 장치에 접착력 강화 물질을 공급하는 단계, 도포기 장치와 전자 구성 부품 사이에 전위차를 설정하는 단계, 및 전위차가 접착력 강화 물질을 전자 구성 부품으로 끌어당겨 접착력 강화 물질을 그 위에 피착하도록 전자 구성 부품 부근에 접착력 강화 물질을 분무하는 단계를 포함하는 것을 특징으로 하는 방법.
  2. 제1항에 있어서, 접착력 강화 물질이 헥사메틸디실라젠(HMOS)을 포함하는 것을 특징으로 하는 방법.
  3. 제1항의 방법에 의해 제조된 전자 구성 부품.
  4. 다이 및 리드 프레임을 갖는 집적회로를 제조하는 방법에 있어서, 분무기에 헥사메틸디실라젠을 공급하는 단계, 분무기와 직접 회로의 리드 프레임 사이에 전위차를 설정하기 위해 전압원을 접속하는 단계, 집적 회로의 부근에 헥사메틸디실라젠을 분무하여 헥사메틸디실라젠을 전위차의 영향하에서 리드 프레임 상에 피착하는 단계, 및 그 위에 분무 피착된 헥사메틸디실라젠을 갖는 도전성 재료상에 성형 화합물을 성형하는 단계를 포함하는 것을 특징으로 하는 방법.
  5. 제4항의 방법에 의해 제조된 집적 회로 장치.
  6. 성형 장치 및 성형 화합물과 함께 사용하기 위한 장치로서, 반도전성 재료 및 도전성 소자를 갖는 집적 회로를 제공하기 위한 장치에 있어서, 도전성 소자와 성형 화합물 사이에 접착력을 강화하는 형태의 접착력 강화 물질을 공급하고 분무하도록 동작될 수 있는 도포기 장치, 및 도포기 장치와 직접 회로의 도전성 소자 사이에 전위차를 설정하기 위해 접속된 전압원을 포함하는 것을 특징으로 하는 장치.
  7. 제6항에 있어서, 접착력 강화 물질이 헥사메틸디실라젠을 포함하는 것을 특징으로 하는 장치.
  8. 핀, 핀 상에 피착된 접착력 강화 물질 층, 및 핀 및 접착력 강화 물질 상에 성형되는 패키지 재료를 갖는 것을 특징으로 하는 직접회로.
  9. 제8항에 있어서, 접착력 강화 물질이 가시적으로 검출될 수 없고, 패키지 재료가 접착력 강화 물질 층이 결핍되어 있는 핀에 대한 동일 패키지 재료의 접착력을 실제로 초과하는 정도의 핀에 대한 접착력을 갖는 것을 특징으로 하는 직접 회로.
  10. 제8항에 있어서, 접착력이 강화 물질이 헥사메틸디실라젠을 포함하는 것을 특징으로 하는 직접회로.
  11. 반도체 재료 및 도전성 소자를 갖는 집적 회로의 제조 및 성형 패키지를 제조하기 위해 성형 화합물을 공급하기 위한 방법에 있어서, 도전성 소자와 성형 화합물 사이에 접착력을 강화하는 형태의 접착력 강화 물질을 분무하도록 동작 가능한 도포기 장치에 접착력 강화 물질을 공급하는 단계, 및 전위차가 접착역 강화 물질을 도전성 소자 및 반도체 재료로 끌어당기도록 집적회로 부근에 접착력 강화 물질로 분무하는 단계를 포함하는 것을 특징으로 하는 방법.
  12. 제11항에 있어서, 접착력 강화 물질이 헥사메틸디실라젠(HMDS)를 포함하는 것을 특징으로 하는 방법.
  13. 제11항의 방법에 의해 제조되는 집적 회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920000078A 1991-01-08 1992-01-07 성형 화합물에 대한 접착력을 개선하기 위한 집적 회로 다이 및 리드 프레임에 물질을 인가하는 방법 및 장치 KR920015524A (ko)

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US63877691A 1991-01-08 1991-01-08
US07/638,776 1991-01-08

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JP (1) JP3363467B2 (ko)
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DE (1) DE69218630T2 (ko)
SG (1) SG43864A1 (ko)
TW (1) TW207586B (ko)

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DE10127894B4 (de) * 2001-06-08 2004-08-12 Mühlbauer Ag Verfahren, Vorrichtung und Produktionsanlage zum Aufbringen von kleinen Kunststoffmengen auf elektrische Bauteile, wie Mikrochips oder deren Träger

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FR2623962B1 (fr) * 1987-10-22 1994-07-08 Grah Klaus Procede et appareil pour le laquage electrostatique de panneaux de circuits imprimes
JPH0244738A (ja) * 1988-08-05 1990-02-14 Semiconductor Energy Lab Co Ltd 電子装置作製方法

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JP3363467B2 (ja) 2003-01-08
EP0494634A3 (en) 1992-09-02
SG43864A1 (en) 1997-11-14
EP0494634A2 (en) 1992-07-15
EP0572043A1 (en) 1993-12-01
TW207586B (ko) 1993-06-11
DE69218630T2 (de) 1997-09-11
DE69218630D1 (de) 1997-05-07
JPH06104296A (ja) 1994-04-15
EP0494634B1 (en) 1997-04-02

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