KR920007237A - Preparation of Field Effect Transistors - Google Patents

Preparation of Field Effect Transistors Download PDF

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Publication number
KR920007237A
KR920007237A KR1019910015541A KR910015541A KR920007237A KR 920007237 A KR920007237 A KR 920007237A KR 1019910015541 A KR1019910015541 A KR 1019910015541A KR 910015541 A KR910015541 A KR 910015541A KR 920007237 A KR920007237 A KR 920007237A
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KR
South Korea
Prior art keywords
preparation
field effect
effect transistors
iii
compound semiconductor
Prior art date
Application number
KR1019910015541A
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Korean (ko)
Other versions
KR100217710B1 (en
Inventor
아끼히꼬 오꾸보라
지로 가사하라
Original Assignee
오가 노리오
소니 가부시기가이샤
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Publication date
Application filed by 오가 노리오, 소니 가부시기가이샤 filed Critical 오가 노리오
Publication of KR920007237A publication Critical patent/KR920007237A/en
Application granted granted Critical
Publication of KR100217710B1 publication Critical patent/KR100217710B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

내용 없음No content

Description

전계효과 트랜지스터으 제법Field effect transistor manufacturing

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 본원 발명을 적용하는 일에의 왜곡층을 가진 HEMT의 단면도.1 is a cross-sectional view of a HEMT having a distortion layer for applying the present invention.

제2도는 그 왜곡층 근방의 밴드모델도.2 is a band model diagram near the distortion layer.

Claims (1)

Ⅲ-Ⅴ족 화합물 반도체 기체상에, Ⅲ-Ⅴ족 화합물 반도체로 이루어진 채널형성층과, 이에 배히 에너지밴드갭이 큰 Ⅲ-Ⅴ족 화합물 반도체로 이루어진 1의 도전형을 가진 배리어층을 에피택셜 성장하고, 그 후의 공정에서 상기 Ⅴ족 원자를 함유한 분위기중에서 650℃~850℃의 열처리를 행하는 것을 특징으로 하는 왜곡층을 가진 전제효과 트랜지스터의 제법.Epitaxially growing a channel forming layer comprising a III-V compound semiconductor on the III-V compound semiconductor substrate and a barrier layer having a conductivity type of 1 consisting of a III-V compound semiconductor having a large energy band gap. And a subsequent heat treatment at 650 ° C. to 850 ° C. in an atmosphere containing the Group V atoms in a subsequent step. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019910015541A 1990-09-07 1991-09-06 Manufacturing method of a field efect transistor KR100217710B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2238097A JPH04116938A (en) 1990-09-07 1990-09-07 Manufacture of field effect transistor
JP90-238097 1990-09-07

Publications (2)

Publication Number Publication Date
KR920007237A true KR920007237A (en) 1992-04-28
KR100217710B1 KR100217710B1 (en) 1999-09-01

Family

ID=17025128

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910015541A KR100217710B1 (en) 1990-09-07 1991-09-06 Manufacturing method of a field efect transistor

Country Status (2)

Country Link
JP (1) JPH04116938A (en)
KR (1) KR100217710B1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8936976B2 (en) 2009-12-23 2015-01-20 Intel Corporation Conductivity improvements for III-V semiconductor devices

Also Published As

Publication number Publication date
KR100217710B1 (en) 1999-09-01
JPH04116938A (en) 1992-04-17

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