JPS54113269A - Production of junction-type electronic field effect transistor - Google Patents
Production of junction-type electronic field effect transistorInfo
- Publication number
- JPS54113269A JPS54113269A JP1983478A JP1983478A JPS54113269A JP S54113269 A JPS54113269 A JP S54113269A JP 1983478 A JP1983478 A JP 1983478A JP 1983478 A JP1983478 A JP 1983478A JP S54113269 A JPS54113269 A JP S54113269A
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- regions
- diffusion
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To facilitate the control of the pinch off voltage of a J-FET and the saturation drain current at a gate-source short-circuit time, by giving a common property to production processes for the J-FET and a bipolar transistor to produce a semiconductor device.
CONSTITUTION: N+-type buried regions 2A and 2B are formed on P-type Si substrate 1 by diffusion, and P+-type region 3 is formed in region 2B. Next, N-type layer 4 is grown epitaxially throughout the surface, and shallow P+-type regions 5A, 5B and 6 are formed on the surface layer part by diffusion. After that, regions 5A and 5B are caused to reach substrate 1 by heat treatment for a long time, and separation regions 7A and 7B are formed, and simultaneously, the thickness of regions 2A and 2B is increased. Then, regions 3 and 4 are connected to generate region 8. Next, N-type region 9 for channel forming is formed in region 8 by diffusion, and P-type gate region 10 is formed in region 9. Then, base region 12 and emitter region 15 of a bipolar transistor are formed in layer 4 on region 2A.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1983478A JPS54113269A (en) | 1978-02-24 | 1978-02-24 | Production of junction-type electronic field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1983478A JPS54113269A (en) | 1978-02-24 | 1978-02-24 | Production of junction-type electronic field effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54113269A true JPS54113269A (en) | 1979-09-04 |
Family
ID=12010301
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1983478A Pending JPS54113269A (en) | 1978-02-24 | 1978-02-24 | Production of junction-type electronic field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54113269A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4939099A (en) * | 1988-06-21 | 1990-07-03 | Texas Instruments Incorporated | Process for fabricating isolated vertical bipolar and JFET transistors |
US5151765A (en) * | 1988-05-20 | 1992-09-29 | Fujitsu Limited | Semiconductor device comprising high-speed and high-current transistors formed in a common substrate and having matched characteristics |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS494594A (en) * | 1972-04-22 | 1974-01-16 | ||
JPS5265689A (en) * | 1975-11-28 | 1977-05-31 | Hitachi Ltd | Semiconductor integrated circuit and its production |
JPS5268383A (en) * | 1975-12-05 | 1977-06-07 | Nec Corp | Manufacture of semiconductor device |
-
1978
- 1978-02-24 JP JP1983478A patent/JPS54113269A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS494594A (en) * | 1972-04-22 | 1974-01-16 | ||
JPS5265689A (en) * | 1975-11-28 | 1977-05-31 | Hitachi Ltd | Semiconductor integrated circuit and its production |
JPS5268383A (en) * | 1975-12-05 | 1977-06-07 | Nec Corp | Manufacture of semiconductor device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5151765A (en) * | 1988-05-20 | 1992-09-29 | Fujitsu Limited | Semiconductor device comprising high-speed and high-current transistors formed in a common substrate and having matched characteristics |
US4939099A (en) * | 1988-06-21 | 1990-07-03 | Texas Instruments Incorporated | Process for fabricating isolated vertical bipolar and JFET transistors |
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