KR910017378A - 광디스크 및 광학정보의 기록방법 - Google Patents

광디스크 및 광학정보의 기록방법 Download PDF

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KR910017378A
KR910017378A KR1019910002736A KR910002736A KR910017378A KR 910017378 A KR910017378 A KR 910017378A KR 1019910002736 A KR1019910002736 A KR 1019910002736A KR 910002736 A KR910002736 A KR 910002736A KR 910017378 A KR910017378 A KR 910017378A
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film
pulse
recording
optical information
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KR950003182B1 (ko
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에이지 오오노
켕이찌 니시우찌
노보루 야마다
노부오 아까히라
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다니이 아끼오
마쯔시다덴기산교 가부시기가이샤
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    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/004—Recording, reproducing or erasing methods; Read, write or erase circuits therefor
    • G11B7/0045—Recording
    • G11B7/00454—Recording involving phase-change effects
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    • G11B7/0045—Recording
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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
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  • Thermal Transfer Or Thermal Recording In General (AREA)
  • Optical Recording Or Reproduction (AREA)

Abstract

내용 없음

Description

광디스크 및 광학정보의 기록방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 의한 광 디스크의 단면도, 제2도는 본 발명에 의한 광디스크의 기록막의 조성범위도, 제3도는 본 발명에 의한 광학정보의 기록방법에 있어서의 펄스열의 구성을 표시한 도면.

Claims (22)

  1. 기판위에 유전체막, 기록막, 유전체막, 반사막의 순으로 적층한 광디스크에 있어서, 상기 기록막은, 조성이 Ge×sby Tez (7x17, 34y44, 44z54, x+y+z=100at%)로 표시되고, 또한 막두께는 10mm이상 35mm이하이고, 반사막쪽의 상기 유전체막의 막두께는 5mm이상 40mm이하이고, 또한 상기 반사막은 적어도 Au, Al, Ti, Ni의 단체 또는 합금으로 이루어지고, 또한 막두께는 35mm이상인 것을 특징으로 하는 광디스크.
  2. 제1항에 있어서 상기 기록막의 조성이 화합물 Ge sb 2Te4와 sb를 연결하는 라인상의 조성인 것을 특징으로하는 광디스크.
  3. 제2항에 있어서, 상기 기록막의 조성이 Ge 12sb 39Te 49로 나타내는 것을 특징으로 하는 광디스크.
  4. 제1항에 있어서, 상기 기록막의 막두께가 15mm이상 25mm이하인 것을 특징으로 하는 광디스크.
  5. 제1항에 있어서, 상기 유전체막이 ZnS, Si3N4, AIN, TiN, ZnS와 SiO2의 혼합물, ZnSe와 SiO2의 혼합물의 적어도 1종류로 이루어진 것을 특징으로 하는 광디스크.
  6. 제1항에 있어서, 반사막쪽의 상기 유전체막의 막두께가 10mm이상 25mm이상인것을 특징으로 하는 광디스크.
  7. 제1항에 있어서, 상기 반사막의 막두께가 45mm이상인것을 특징으로 하는 광디스크.
  8. 제1항에 있어서, 기판쪽의 상기 유전체막의 막두께가 10mm이상 180mm이하인 것을 특징으로 하는 광디스크.
  9. 기판위에 유전체막, 기록막, 유전체막, 반사막의 순으로 적층하고, 상기 기록막은, 조성이 Gex Sby Tez (7x17, 34y44, 44z54, x+y+z=100at%)로 표시되고, 또한 막두께는 10mm이상 35mm이하이고, 반사막쪽의 상기 유전체막의 막두께는 5mm이상 40mm이하이고, 또한 상기 반사막은 적어도 Au, Al, Ti, Ni의 단체 또는 합금으로 이루어지고, 또한 막두께는 35mm이상인 것을 특징으로 하는 광디스크상에, 펄스폭 변조된 디지틀 신호를 1개의 레이저스포트를 사용하여 오우버라이트하는 광학정보의 기록방법에 있어서, 광디스크를 레이저스포트와의 상대속도가 1.2~1.4m/sec사이의 일정속도가 되도록 회전시키는 스텝과, 상기 디지틀신호에 포함되는 각각의 펄스를 복수의 펄스로 이루어진 펄스열로 변환하는 스텝과, 레이저파우어를 상기 펄스열에 의해 소거 레벨과 기록레벨사이에서 변조하여, 각각의 상기 펄스열에서 각각 1개의 기록마이크를 광디스크위에 형성해서 상기 디지틀신호를 기록하는 스텝으로 이루어지고, 상기 펄스열은 선두펄스와 후속펄스열로 이루어지고, 상기 선두 펄스의 폭은 항상 일정하고 또한 후속펄스 열중의 각 펄스의 폭보다 크고, 상기 후속펄스열중의 각 펄스의 폭과 간격은 각각 동일하고, 또한 길이가 n번째의 기록마이크를 형성하는 경우의 상기 후속 펄스중의 펄스수는 n-1개인 것을 특징으로 하는 광학정보의 기록방법.
  10. 기판위에 유전체막, 기록막, 유전체막, 반사막의 순으로 적층하고, 상기 기록막은, 조성이 Gex Sby Tez (7x17, 34y44, 44z54, x+y+z=100at%)로 표시되고, 또한 막두께는 10mm이상 35mm이하이고, 반사막쪽의 상기 유전체막의 막두께는 5mm이상 40mm이하이고, 또한 상기 반사막은 적어도 Au, Al, Ti, Ni의 단체 또는 합금으로 이루어지고, 또한 막두께는 35mm이상인 것을 특징으로 하는 광디스크상에, 펄스폭 변조된 디지틀 신호를 기록하는 광학정보의 기록방법에 있어서, 광디스크를 레이저스포트와의 상대속도가 1.2~1.4m/sec사이의 일정속도가 되도록 회전시키는 스텝과, 오래된 기록마아크의 소거는 레이저파우어를 상기 기록막의 용융하는 파우어 레벨이상으로 일정하게 유지하여 연속적으로 조사해서 행하는 스텝과, 상기 디지틀신호에 포함되는 각각의 펄스를 복수의 펄스로 이루어진 펄스열로 변환하는 스텝과, 레이저파우어를 상기 펄스열에 의해 소거레벨과 기록레벨 사이에서 변조하여, 각각의 상기 펄스열에서 각각 1개의 기록마이크를 광디스크상에 형성해서 상기 디지틀신호를 기록하는 스텝으로 이루어지고, 상기 펄스열은 선두펄스와 후속펄스열로 이루어지고, 상기 선두 펄스의 폭은 항상 일정하고 또한 후속펄스 열중의 각 펄스의 폭보다 크고, 상기 후속펄스열중의 각 펄스의 폭과 간격은 각각 동등하고, 또한 길이가 n번째의 기록마이크를 형성하는 경우의 상기 후속펄스중의 펄스수는 n-1개인 것을 특징으로 하는 광학정보의 기록방법.
  11. 제9, 10항에 있어서 상기 레이저파우어의 변조는 상기 펄스열의 대응하는 변환전의 펄스폭의 기간만큼 기록레벨과 재생레벨 또는 오프레벨과의 사이에서 행하여지는 것을 특징으로 하는 광학정보의 기록방법.
  12. 제9, 10항에 있어서, 상기 선두펄스의 폭은 상기 후속펄스열의 각 펄스의 폭의 2배이상 4.5배이하인것을 특징으로 하는 광학정보의 기록방법.
  13. 제9, 10항에 있어서, 상기 후속펄스열중의 각 펄스의 폭은 후속펄스의 반복주기의 3/8이상 3/4이하인 것을 특징으로 하는 광학정보의 기록방법.
  14. 제13항에 있어서, 상기 후속펄스열중의 각 펄스의 폭은 후속펄스의 반복주기의 1/2인 것을 특징으로 하는 광학정보의 기록방법.
  15. 제9, 10항에 있어서, 상기 디지틀신호가 CD규격의 EFM신호인 것을 특징으로 하는 광학정보의 기록방법.
  16. 제9, 10항에 있어서, 상기 기록막의 조성이 화합물 Ge Sb 2Te4와 Sb를 연결하는 라인상의 조성인것을 특징으로 하는 광학정보의 기록방법.
  17. 제16항에 있어서, 상기 기록막의 조성이 Ge 12Sb 39Te 49로 나타내는 것을 특징으로 하는 광학정보의 기록방법.
  18. 제9, 10항에 있어서, 상기 기록막의 막두께가 15mm이상 25mm이상인 것을 특징으로 하는 광학정보의 기록방법.
  19. 제9, 10항에 있어서, 상기 유전체막이 ZnS, Si3N4, AIN, TiN, ZnS와 SiO2의 혼합물, ZnSe와 SiO2의 혼합물의 적어도 1종류로 이루어진 것을 특징으로 하는 광학정보의 기록방법.
  20. 제9항 10항에 있어서, 반사막쪽의 상기 유전체막의 두께가 10mm이상 25mm이상인것을 특징으로 하는 광학정보의 기록방법.
  21. 제9항 10항에 있어서, 상기 반사막의 막두께가 45mm이상인것을 특징으로 하는 광학정보의 기록방법.
  22. 제9항 10항에 있어서, 기판쪽의 상기 유전체막의 막두께가 100mm이상 180mm이하인 것을 특징으로 하는 광학정보의 기록방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910002736A 1990-03-14 1991-02-20 광디스크 및 광학정보의 기록방법 KR950003182B1 (ko)

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KR100331814B1 (ko) * 1999-02-26 2002-04-09 구자홍 광 기록 매체

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WO1996011471A1 (en) * 1994-10-05 1996-04-18 Asahi Kasei Kogyo Kabushiki Kaisha Phase change mode optical disk and method of manufacturing the same
US5764619A (en) 1995-04-07 1998-06-09 Matsushita Electric Industrial Co., Ltd. Optical recording medium having two separate recording layers
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EP0829867B1 (en) * 1996-09-13 2001-03-21 Nec Corporation Phase-change type optical recording medium and method of optically recording with the same
JP3255051B2 (ja) * 1996-12-05 2002-02-12 三菱化学株式会社 光学的情報記録用媒体
JPH10172145A (ja) * 1996-12-13 1998-06-26 Nec Corp 相変化光ディスクの初期化装置
JP3545163B2 (ja) * 1997-04-10 2004-07-21 パイオニア株式会社 信号変換装置及びディジタル情報記録装置
US5991252A (en) * 1997-07-21 1999-11-23 Discovision Associates Method and apparatus for reducing the width of marks written in optical media
KR19990042064A (ko) * 1997-11-25 1999-06-15 윤종용 귀금속 반사층을 구비한 상변화 광디스크
JP3954438B2 (ja) * 2002-05-31 2007-08-08 Ｔｄｋ株式会社 光記録媒体への情報記録方法、情報記録装置及び光記録媒体
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