KR910015041A - 두개의 에미터 단자를 갖는 고주파수 smd 트랜지스터 - Google Patents
두개의 에미터 단자를 갖는 고주파수 smd 트랜지스터 Download PDFInfo
- Publication number
- KR910015041A KR910015041A KR1019910001600A KR910001600A KR910015041A KR 910015041 A KR910015041 A KR 910015041A KR 1019910001600 A KR1019910001600 A KR 1019910001600A KR 910001600 A KR910001600 A KR 910001600A KR 910015041 A KR910015041 A KR 910015041A
- Authority
- KR
- South Korea
- Prior art keywords
- emitter
- terminals
- high frequency
- transistor
- lead frame
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30105—Capacitance
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Bipolar Transistors (AREA)
- Wire Bonding (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제12도는 본 발명 실시예의 평면도.
Claims (6)
- 에미터 접촉으로 구성되는 고주파수 트랜지스터를 포함하는 반도체 칩; 및 두개의 에미터 단자 및 이를 연결하는 내부 웨브를 포함하는 다수의 단자로 구성되며, 상기 에미터 접촉은 상기 내부 웨브 및 이를 통하여 상기 두개의 에미터 단자에 전기적으로 연결되는 것을 특징으로 하는 고주파수 SMD 트랜지스터.
- 제1항에 있어서, 상기 리드 프레임은 SOT-143 구성의 다수 단자로 구성되는 것을 특징으로 하는 고주파수 SMD 트랜지스터.
- 제1항에 있어서, 상기 구성부분은 사각형의 덮개를 포함하고; 상기 두개의 에미터 단자는 대각선으로 마주보는 장소에 상기 구성부분의 상기 덮개로 부터 뻗어나오는 것을 특징으로 하는 고주파수 SMD 트랜지스터.
- 제1항에 있어서, 상기 구성부분은 사각형의 덮개를 포함하고; 상기 두개의 에미터 단자는 상기 구성부분의 상기 사각형 덮개의 똑같이 긴쪽에서 서로 떨어진 상기 덮개로 부터 뻗어나오는 것을 특징으로 하는 고주파수 SMD 트랜지스터.
- 에미터 접촉으로 구성되는 고주파수 트랜지스터를 포함하는 반도체 칩; 및 상기 리드 프레임으로 단일하게 내부에서 연결되어 구성된 두개의 에미터 단자를 포함하는 다수의 단자로 구성되는 리드 프레임을 포함하며, 상기 에미터 접촉이 상기 동일판의 에미터 단자-리드 프레임 구성에 전기적으로 연결되는 것을 특징으로 하는 고주파수 SMD 트랜지스터.
- 제5항에 있어서, 상기 리드 프레임은 SOT-143 구성으로 상기 다수의 단자로 이루어지는 것을 특징으로 하는 고주파수 SMD 트랜지스터.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP90101916A EP0439653A1 (de) | 1990-01-31 | 1990-01-31 | Hochfrequenz-SMD-Transistor mit zwei Emitteranschlüssen |
EP90101916.6 | 1990-01-31 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR910015041A true KR910015041A (ko) | 1991-08-31 |
Family
ID=8203567
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019910001600A KR910015041A (ko) | 1990-01-31 | 1991-01-31 | 두개의 에미터 단자를 갖는 고주파수 smd 트랜지스터 |
Country Status (4)
Country | Link |
---|---|
US (1) | US5107326A (ko) |
EP (1) | EP0439653A1 (ko) |
KR (1) | KR910015041A (ko) |
CA (1) | CA2035215A1 (ko) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5804867A (en) * | 1996-10-02 | 1998-09-08 | Ericsson Inc. | Thermally balanced radio frequency power transistor |
KR101103674B1 (ko) | 2010-06-01 | 2012-01-11 | 엘지이노텍 주식회사 | 발광 소자 |
KR101859149B1 (ko) | 2011-04-14 | 2018-05-17 | 엘지이노텍 주식회사 | 발광 소자 패키지 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1564563C3 (de) * | 1966-04-07 | 1975-04-30 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Halbleiterbauelement |
NL6604964A (ko) * | 1966-04-14 | 1967-10-16 | ||
US3518504A (en) * | 1966-11-15 | 1970-06-30 | Int Standard Electric Corp | Transistor with lead-in electrodes |
FR2110575A5 (ko) * | 1970-10-22 | 1972-06-02 | Radiotechnique Compelec | |
US4556896A (en) * | 1982-08-30 | 1985-12-03 | International Rectifier Corporation | Lead frame structure |
JPS63265457A (ja) * | 1987-04-23 | 1988-11-01 | Toshiba Corp | 高周波トランジスタ |
-
1990
- 1990-01-31 EP EP90101916A patent/EP0439653A1/de not_active Withdrawn
-
1991
- 1991-01-18 US US07/643,128 patent/US5107326A/en not_active Expired - Fee Related
- 1991-01-29 CA CA002035215A patent/CA2035215A1/en not_active Abandoned
- 1991-01-31 KR KR1019910001600A patent/KR910015041A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
US5107326A (en) | 1992-04-21 |
EP0439653A1 (de) | 1991-08-07 |
CA2035215A1 (en) | 1991-08-01 |
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