KR910015041A - 두개의 에미터 단자를 갖는 고주파수 smd 트랜지스터 - Google Patents

두개의 에미터 단자를 갖는 고주파수 smd 트랜지스터 Download PDF

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Publication number
KR910015041A
KR910015041A KR1019910001600A KR910001600A KR910015041A KR 910015041 A KR910015041 A KR 910015041A KR 1019910001600 A KR1019910001600 A KR 1019910001600A KR 910001600 A KR910001600 A KR 910001600A KR 910015041 A KR910015041 A KR 910015041A
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South Korea
Prior art keywords
emitter
terminals
high frequency
transistor
lead frame
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KR1019910001600A
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English (en)
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한스 하르가서
Original Assignee
발도르프, 피켄셔
지멘스 악티엔게젤샤프트
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Publication of KR910015041A publication Critical patent/KR910015041A/ko

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    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Bipolar Transistors (AREA)
  • Wire Bonding (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

내용 없음

Description

두개의 에미터 단자를 갖는 고주파수 SMD 트랜지스터
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제12도는 본 발명 실시예의 평면도.

Claims (6)

  1. 에미터 접촉으로 구성되는 고주파수 트랜지스터를 포함하는 반도체 칩; 및 두개의 에미터 단자 및 이를 연결하는 내부 웨브를 포함하는 다수의 단자로 구성되며, 상기 에미터 접촉은 상기 내부 웨브 및 이를 통하여 상기 두개의 에미터 단자에 전기적으로 연결되는 것을 특징으로 하는 고주파수 SMD 트랜지스터.
  2. 제1항에 있어서, 상기 리드 프레임은 SOT-143 구성의 다수 단자로 구성되는 것을 특징으로 하는 고주파수 SMD 트랜지스터.
  3. 제1항에 있어서, 상기 구성부분은 사각형의 덮개를 포함하고; 상기 두개의 에미터 단자는 대각선으로 마주보는 장소에 상기 구성부분의 상기 덮개로 부터 뻗어나오는 것을 특징으로 하는 고주파수 SMD 트랜지스터.
  4. 제1항에 있어서, 상기 구성부분은 사각형의 덮개를 포함하고; 상기 두개의 에미터 단자는 상기 구성부분의 상기 사각형 덮개의 똑같이 긴쪽에서 서로 떨어진 상기 덮개로 부터 뻗어나오는 것을 특징으로 하는 고주파수 SMD 트랜지스터.
  5. 에미터 접촉으로 구성되는 고주파수 트랜지스터를 포함하는 반도체 칩; 및 상기 리드 프레임으로 단일하게 내부에서 연결되어 구성된 두개의 에미터 단자를 포함하는 다수의 단자로 구성되는 리드 프레임을 포함하며, 상기 에미터 접촉이 상기 동일판의 에미터 단자-리드 프레임 구성에 전기적으로 연결되는 것을 특징으로 하는 고주파수 SMD 트랜지스터.
  6. 제5항에 있어서, 상기 리드 프레임은 SOT-143 구성으로 상기 다수의 단자로 이루어지는 것을 특징으로 하는 고주파수 SMD 트랜지스터.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910001600A 1990-01-31 1991-01-31 두개의 에미터 단자를 갖는 고주파수 smd 트랜지스터 KR910015041A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP90101916A EP0439653A1 (de) 1990-01-31 1990-01-31 Hochfrequenz-SMD-Transistor mit zwei Emitteranschlüssen
EP90101916.6 1990-01-31

Publications (1)

Publication Number Publication Date
KR910015041A true KR910015041A (ko) 1991-08-31

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ID=8203567

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Application Number Title Priority Date Filing Date
KR1019910001600A KR910015041A (ko) 1990-01-31 1991-01-31 두개의 에미터 단자를 갖는 고주파수 smd 트랜지스터

Country Status (4)

Country Link
US (1) US5107326A (ko)
EP (1) EP0439653A1 (ko)
KR (1) KR910015041A (ko)
CA (1) CA2035215A1 (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5804867A (en) * 1996-10-02 1998-09-08 Ericsson Inc. Thermally balanced radio frequency power transistor
KR101103674B1 (ko) 2010-06-01 2012-01-11 엘지이노텍 주식회사 발광 소자
KR101859149B1 (ko) 2011-04-14 2018-05-17 엘지이노텍 주식회사 발광 소자 패키지

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1564563C3 (de) * 1966-04-07 1975-04-30 Siemens Ag, 1000 Berlin Und 8000 Muenchen Halbleiterbauelement
NL6604964A (ko) * 1966-04-14 1967-10-16
US3518504A (en) * 1966-11-15 1970-06-30 Int Standard Electric Corp Transistor with lead-in electrodes
FR2110575A5 (ko) * 1970-10-22 1972-06-02 Radiotechnique Compelec
US4556896A (en) * 1982-08-30 1985-12-03 International Rectifier Corporation Lead frame structure
JPS63265457A (ja) * 1987-04-23 1988-11-01 Toshiba Corp 高周波トランジスタ

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US5107326A (en) 1992-04-21
EP0439653A1 (de) 1991-08-07
CA2035215A1 (en) 1991-08-01

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