KR840002584A - 반도체 장치 - Google Patents
반도체 장치 Download PDFInfo
- Publication number
- KR840002584A KR840002584A KR1019820005344A KR820005344A KR840002584A KR 840002584 A KR840002584 A KR 840002584A KR 1019820005344 A KR1019820005344 A KR 1019820005344A KR 820005344 A KR820005344 A KR 820005344A KR 840002584 A KR840002584 A KR 840002584A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor device
- semiconductor
- region
- semiconductor region
- layer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims 21
- 239000000758 substrate Substances 0.000 claims 5
- 239000000463 material Substances 0.000 claims 3
- 229910052751 metal Inorganic materials 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 claims 1
- 230000006698 induction Effects 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 claims 1
- 239000010980 sapphire Substances 0.000 claims 1
- 229910021332 silicide Inorganic materials 0.000 claims 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 229910052596 spinel Inorganic materials 0.000 claims 1
- 239000011029 spinel Substances 0.000 claims 1
- 230000003068 static effect Effects 0.000 claims 1
- 229910052723 transition metal Inorganic materials 0.000 claims 1
- 150000003624 transition metals Chemical class 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02491—Conductive materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66416—Static induction transistors [SIT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66454—Static induction transistors [SIT], e.g. permeable base transistors [PBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13062—Junction field-effect transistor [JFET]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Junction Field-Effect Transistors (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
내용 없음.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명을 적용한 쇼트키이 케이트(schottky gate) FET의 예를 도시한 사시도.
제2도 a∼제2도 e는 그의 제조 공정을 표시하는 단면도.
Claims (9)
- 절연성 기판위에 헤테로 에피택스 성장을 시킨 금속적 전기 전도성을 갖는 재료층과 그 위에 다시 헤테로 에피택스 성장을 시킨 최소한 하나의 반도체층 영역을 갖고 있으며 이 반도체 영역을 소재로 하여 능동영역이 형성되고 상기 금속적 전도성을 갖는 물질층을 상기 반도체 장치의 하나의 전극으로 한것을 특징으로 하는 반도체 장치.
- 상기의 절연성 기판은 사파이어 또는 스피넬로 된 기판이고 상기 금속적 전도성을 갖는 재료층이 천이 금속의 실리사이드로된 층이며, 상기 반도체 영역이 실리콘으로된 층인 것을 특징으로 하는 특허 청구 범위 1의 반도체 장치.
- 상기의 절연성 기판은 고저항의 AgAs 결정이고, 상기 금속적 전도성을 갖는 금속층은 Al이며, 상기 반도체 영역으로서는 GaAs 또는 GaAlAs인 것을 특징으로 하는 특허 청구 범위 1의 반도체 장치.
- 상기의 반도체 영역이 pnp(혹은 npn) 또는 pinp(혹은 nipn)의 구조를 최소한 갖고 있으며, 바아퍼울러트랜지스터가 구성된 것을 특징으로 하는 특허 청구 범위 1과 특허청구범위 2 혹은 특히 청구 범위 3의 반도체 장치.
- 상기의 반도체 영역이 pin 또는 pnin(혹은 npin)구조를 최소한 갖고 있으며 다이오드가 구성되는 것을 특징으로 하는 특허 청구 범위 1과 특허 청구 범위 2, 혹은 특허 청구 3의 반도체 장치.
- 상기의 반도체 영역이 pnpn 구조를 최소한 갖고 있으며, 스윗칭 장치가 구성되는 것을 특징으로 하는 특허 청구 범위 1과 특허 청구 범위 2, 혹은 특허 청구 범위 3의 반도체 장치.
- 상기의 반도체 영역에 스태틱 인덕션 트랜지스터가 최소한 구성된 특허 청구 범위 l과 특허 청구 범위 2, 혹은 특허 청구 범위 3의 반도체 장치.
- 상기의 반도체 영역에 접합형 전개효과 트랜지스터가 최소한 구성된 것을 특징으로 하는 특허 청구 범위 1과 특허 청구 범위 2, 혹은 특허 청구 범위 3의 반도체 장치.
- 상기의 반도체 영역에 퍼미어블 베이스 트랜지스터가 최소한 구성된 것을 특징으로 하는 특허 청구 범위 1과 특허 청구 범위 2, 혹은 특허 청구 범위 3의 반도체 장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56-189350 | 1981-11-27 | ||
JP56189350A JPS5891631A (ja) | 1981-11-27 | 1981-11-27 | 半導体装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR840002584A true KR840002584A (ko) | 1984-07-02 |
Family
ID=16239854
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019820005344A KR840002584A (ko) | 1981-11-27 | 1982-11-26 | 반도체 장치 |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP0082325B1 (ko) |
JP (1) | JPS5891631A (ko) |
KR (1) | KR840002584A (ko) |
CA (1) | CA1189983A (ko) |
DE (1) | DE3279167D1 (ko) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6235519A (ja) * | 1985-08-09 | 1987-02-16 | Agency Of Ind Science & Technol | 埋め込み電極の接続方法 |
CN103000674B (zh) * | 2012-12-14 | 2017-04-12 | 复旦大学 | 一种晶体管及其制造方法 |
US9570595B2 (en) * | 2012-12-14 | 2017-02-14 | Fudan University | Transistor and method of making |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SE354098B (ko) * | 1971-07-05 | 1973-02-26 | Svenska Electromagneter | |
US3929527A (en) * | 1974-06-11 | 1975-12-30 | Us Army | Molecular beam epitaxy of alternating metal-semiconductor films |
US4169746A (en) * | 1977-04-28 | 1979-10-02 | Rca Corp. | Method for making silicon on sapphire transistor utilizing predeposition of leads |
-
1981
- 1981-11-27 JP JP56189350A patent/JPS5891631A/ja active Pending
-
1982
- 1982-11-22 DE DE8282110783T patent/DE3279167D1/de not_active Expired
- 1982-11-22 EP EP19820110783 patent/EP0082325B1/en not_active Expired
- 1982-11-26 KR KR1019820005344A patent/KR840002584A/ko unknown
- 1982-11-26 CA CA000416462A patent/CA1189983A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE3279167D1 (en) | 1988-12-01 |
EP0082325A3 (en) | 1984-12-05 |
JPS5891631A (ja) | 1983-05-31 |
CA1189983A (en) | 1985-07-02 |
EP0082325A2 (en) | 1983-06-29 |
EP0082325B1 (en) | 1988-10-26 |
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