KR910015018A - 액체소오스용기 - Google Patents

액체소오스용기 Download PDF

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Publication number
KR910015018A
KR910015018A KR1019910000315A KR910000315A KR910015018A KR 910015018 A KR910015018 A KR 910015018A KR 1019910000315 A KR1019910000315 A KR 1019910000315A KR 910000315 A KR910000315 A KR 910000315A KR 910015018 A KR910015018 A KR 910015018A
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KR
South Korea
Prior art keywords
liquid source
line
liquid
gas supply
valves
Prior art date
Application number
KR1019910000315A
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English (en)
Other versions
KR930007441B1 (ko
Inventor
신지 미야자키
요시다카 츠나시마
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 아오이 죠이치, 가부시키가이샤 도시바 filed Critical 아오이 죠이치
Publication of KR910015018A publication Critical patent/KR910015018A/ko
Application granted granted Critical
Publication of KR930007441B1 publication Critical patent/KR930007441B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/2931—Diverse fluid containing pressure systems
    • Y10T137/3115—Gas pressure storage over or displacement of liquid
    • Y10T137/3127—With gas maintenance or application
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/4238—With cleaner, lubrication added to fluid or liquid sealing at valve interface
    • Y10T137/4245—Cleaning or steam sterilizing
    • Y10T137/4259—With separate material addition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Loading And Unloading Of Fuel Tanks Or Ships (AREA)
  • Jet Pumps And Other Pumps (AREA)

Abstract

내용 없음

Description

액체소오스용기
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 액체소오스용기의 실시예를 나타낸 도면, 제2도는 제1도의 액체소오스용기 및 압송시스템을 나타낸 도면, 제3도는 본 발명의 과정에서 개발된 액체소오스용기를 나타낸 도면.

Claims (1)

  1. 액체소오스를 수용하는 액체소오스용기본체(17)와, 상기 액체소오스를 압송하기 위한 압송가스공급라인(18), 이 압송가스공급라인(18)에 설치된 제1 및 제2압송가스공급밸브(20,24), 상기 액체소오스를 토출하는 액체소오스토출라인(19), 이 액체소오스토출라인(19)에 설치된 제1 및 제2액체소오스토출밸브(21, 25), 제1 및 제2압송가스공급밸브(20,24)를 연결하는 압송가스공급라인(18)에 일단이 접속되고, 제1 및 제 2 액체소오스토출밸브(21, 25)를 연결하는 액체소오스토출라인(19)에 다른 단이 접속된 퍼어지라인(23) 및, 이 퍼어지라인(23)에 설치된 퍼어지밸브(22)를 구비한 것을 특징으로 하는 액체소오스용기.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910000315A 1990-01-11 1991-01-11 액체소오스용기 KR930007441B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP90-4337 1990-01-11
JP433790A JP2614338B2 (ja) 1990-01-11 1990-01-11 液体ソース容器
JP02-004337 1990-01-11

Publications (2)

Publication Number Publication Date
KR910015018A true KR910015018A (ko) 1991-08-31
KR930007441B1 KR930007441B1 (ko) 1993-08-10

Family

ID=11581628

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910000315A KR930007441B1 (ko) 1990-01-11 1991-01-11 액체소오스용기

Country Status (5)

Country Link
US (1) US5069244A (ko)
EP (1) EP0437196B1 (ko)
JP (1) JP2614338B2 (ko)
KR (1) KR930007441B1 (ko)
DE (1) DE69113066T2 (ko)

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Also Published As

Publication number Publication date
JPH03208889A (ja) 1991-09-12
EP0437196A1 (en) 1991-07-17
DE69113066D1 (de) 1995-10-26
EP0437196B1 (en) 1995-09-20
JP2614338B2 (ja) 1997-05-28
DE69113066T2 (de) 1996-04-11
US5069244A (en) 1991-12-03
KR930007441B1 (ko) 1993-08-10

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