KR910008862A - 압접형 반도체 장치 - Google Patents
압접형 반도체 장치 Download PDFInfo
- Publication number
- KR910008862A KR910008862A KR1019900017533A KR900017533A KR910008862A KR 910008862 A KR910008862 A KR 910008862A KR 1019900017533 A KR1019900017533 A KR 1019900017533A KR 900017533 A KR900017533 A KR 900017533A KR 910008862 A KR910008862 A KR 910008862A
- Authority
- KR
- South Korea
- Prior art keywords
- electrode
- main surface
- main
- electrode member
- semiconductor device
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims 17
- 239000008188 pellet Substances 0.000 claims 11
- 230000007547 defect Effects 0.000 claims 5
- 239000013078 crystal Substances 0.000 claims 4
- 238000000034 method Methods 0.000 claims 1
- 230000002093 peripheral effect Effects 0.000 claims 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
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- H01L2924/01013—Aluminum [Al]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01042—Molybdenum [Mo]
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
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- H—ELECTRICITY
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10156—Shape being other than a cuboid at the periphery
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
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- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10157—Shape being other than a cuboid at the active surface
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
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- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10158—Shape being other than a cuboid at the passive surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Thyristors (AREA)
- Die Bonding (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 본 발명의 한 실시예에 관련된 얼로이프리 구조의 압접형 다이오드의 주요부를 도시한 단면도.
제 3 도는 제1도의 압접형 다이오드의 변형예의 주요부를 도시한 단면도
제 4 도 및 제 5 도는 본 발명의 다른 실시예에 관련된 각각에 대응하는 전자선 조사 또는 프로톤 조사에 의해 캐리어 수명의 부분적인 제어가 행해진 얼로이프리 구조의 역저지형 GTO 사이리스터의 일부를 도시한 단면도.
Claims (5)
- 편면측의 제1주 표면 및 다른 면측의 제2주 표면의 각각에 형성된 주전극(12)을 갖는 반도체 펠릿(10,30,40,50,60,70,80)과 상기 반도체 펠릿의 최소한 한쪽의 주표면에 전극 부재(14)를 통해서 상기 반도체 펠릿의 제1주 표면의 주전극 및 제2주 표면의 주전극을 가압한 상태로 반도체 펠릿을 끼우도록 설치된 전극 포스트(15)를 포함하는 압접형 반도체 장치에 있어서, 상기 반도체 펠릿면 내의 결정 결함 밀도가, 상기 전극 부재에 대향 접촉되지 않은 열 발생 부분(A,B,C,D,E,F,G)에서의 캐리어 수명이 상기 전극부재에 당접하는 열 발생 부분에서의 캐리어 수명보다도 낮아지는 분포를 갖는 것을 특징으로 하는 압접형 반도체 장치.
- 제1항에 있어서, 상기 반도체 펠릿의 주 표면 내에서 상기 전극 부재에 당접하지 않은 열 발생 부분에서의 결정 결함 밀도가 상기 전극 부재에 당접한 열 발생 부분에서의 결정 결함 밀도의 거의 1.5배 이상인 것을 특징으로 하는 압접형 반도체 장치.
- 제1항 또는 제2항에 있어서, 상기 결정 결함 밀도의 분포가 반도체 펠릿면 내 및 깊이 방향으로 제어되는 것을 특징으로 하는 압접형 반도체 장치.
- 제1항에 있어서, 상기 반도체 펠릿의 제1주 표면의 주전극 및 제2주 표면이 주전극에 대해 각각 전극 부재를 통해서 가압한 상태로 전극 포스트가 설치되고, 상기 반도체 펠릿, 전극 부재, 및 전극 포스트의 각 대향면은 서로 고착되지 않고, 서로 접촉한 상태로 가압되어 있는 것을 특징으로 하는 압접형 반도체 장치.
- 제1항에 있어서, 상기 반도체 펠릿의 주 표면 내에서 상기 전극 부재에 당접하지 않은 열 발생 부분이 펠릿 주변부인 것을 특징으로 하는 압접형 반도체 장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28373689A JPH0744264B2 (ja) | 1989-10-31 | 1989-10-31 | 圧接型半導体装置 |
JPP01-283736 | 1989-10-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR910008862A true KR910008862A (ko) | 1991-05-31 |
KR940008214B1 KR940008214B1 (ko) | 1994-09-08 |
Family
ID=17669439
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019900017533A KR940008214B1 (ko) | 1989-10-31 | 1990-10-31 | 압접형 반도체 장치 |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0428916B1 (ko) |
JP (1) | JPH0744264B2 (ko) |
KR (1) | KR940008214B1 (ko) |
DE (1) | DE69031935T2 (ko) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3180863B2 (ja) * | 1993-07-27 | 2001-06-25 | 富士電機株式会社 | 加圧接触形半導体装置およびその組立方法 |
JP4743447B2 (ja) | 2008-05-23 | 2011-08-10 | 三菱電機株式会社 | 半導体装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1124176A (en) * | 1966-02-24 | 1968-08-21 | Licentia Gmbh | Improvements in semiconductor switching devices |
US4620211A (en) * | 1984-08-13 | 1986-10-28 | General Electric Company | Method of reducing the current gain of an inherent bipolar transistor in an insulated-gate semiconductor device and resulting devices |
JPH079919B2 (ja) * | 1985-09-20 | 1995-02-01 | 三菱電機株式会社 | 半導体装置 |
-
1989
- 1989-10-31 JP JP28373689A patent/JPH0744264B2/ja not_active Expired - Lifetime
-
1990
- 1990-10-31 EP EP19900120908 patent/EP0428916B1/en not_active Expired - Lifetime
- 1990-10-31 DE DE69031935T patent/DE69031935T2/de not_active Expired - Fee Related
- 1990-10-31 KR KR1019900017533A patent/KR940008214B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE69031935T2 (de) | 1998-05-28 |
JPH0744264B2 (ja) | 1995-05-15 |
EP0428916B1 (en) | 1998-01-14 |
DE69031935D1 (de) | 1998-02-19 |
JPH03145161A (ja) | 1991-06-20 |
EP0428916A1 (en) | 1991-05-29 |
KR940008214B1 (ko) | 1994-09-08 |
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