KR910008862A - 압접형 반도체 장치 - Google Patents

압접형 반도체 장치 Download PDF

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Publication number
KR910008862A
KR910008862A KR1019900017533A KR900017533A KR910008862A KR 910008862 A KR910008862 A KR 910008862A KR 1019900017533 A KR1019900017533 A KR 1019900017533A KR 900017533 A KR900017533 A KR 900017533A KR 910008862 A KR910008862 A KR 910008862A
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South Korea
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electrode
main surface
main
electrode member
semiconductor device
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KR1019900017533A
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English (en)
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KR940008214B1 (ko
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미쯔히꼬 기따가와
요시오 요꼬따
가즈오 와따누끼
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아오이 죠이찌
가부시끼가이샤 도시바
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Publication of KR940008214B1 publication Critical patent/KR940008214B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
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    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]

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  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Thyristors (AREA)
  • Die Bonding (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

내용 없음

Description

압접형 반도체 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 본 발명의 한 실시예에 관련된 얼로이프리 구조의 압접형 다이오드의 주요부를 도시한 단면도.
제 3 도는 제1도의 압접형 다이오드의 변형예의 주요부를 도시한 단면도
제 4 도 및 제 5 도는 본 발명의 다른 실시예에 관련된 각각에 대응하는 전자선 조사 또는 프로톤 조사에 의해 캐리어 수명의 부분적인 제어가 행해진 얼로이프리 구조의 역저지형 GTO 사이리스터의 일부를 도시한 단면도.

Claims (5)

  1. 편면측의 제1주 표면 및 다른 면측의 제2주 표면의 각각에 형성된 주전극(12)을 갖는 반도체 펠릿(10,30,40,50,60,70,80)과 상기 반도체 펠릿의 최소한 한쪽의 주표면에 전극 부재(14)를 통해서 상기 반도체 펠릿의 제1주 표면의 주전극 및 제2주 표면의 주전극을 가압한 상태로 반도체 펠릿을 끼우도록 설치된 전극 포스트(15)를 포함하는 압접형 반도체 장치에 있어서, 상기 반도체 펠릿면 내의 결정 결함 밀도가, 상기 전극 부재에 대향 접촉되지 않은 열 발생 부분(A,B,C,D,E,F,G)에서의 캐리어 수명이 상기 전극부재에 당접하는 열 발생 부분에서의 캐리어 수명보다도 낮아지는 분포를 갖는 것을 특징으로 하는 압접형 반도체 장치.
  2. 제1항에 있어서, 상기 반도체 펠릿의 주 표면 내에서 상기 전극 부재에 당접하지 않은 열 발생 부분에서의 결정 결함 밀도가 상기 전극 부재에 당접한 열 발생 부분에서의 결정 결함 밀도의 거의 1.5배 이상인 것을 특징으로 하는 압접형 반도체 장치.
  3. 제1항 또는 제2항에 있어서, 상기 결정 결함 밀도의 분포가 반도체 펠릿면 내 및 깊이 방향으로 제어되는 것을 특징으로 하는 압접형 반도체 장치.
  4. 제1항에 있어서, 상기 반도체 펠릿의 제1주 표면의 주전극 및 제2주 표면이 주전극에 대해 각각 전극 부재를 통해서 가압한 상태로 전극 포스트가 설치되고, 상기 반도체 펠릿, 전극 부재, 및 전극 포스트의 각 대향면은 서로 고착되지 않고, 서로 접촉한 상태로 가압되어 있는 것을 특징으로 하는 압접형 반도체 장치.
  5. 제1항에 있어서, 상기 반도체 펠릿의 주 표면 내에서 상기 전극 부재에 당접하지 않은 열 발생 부분이 펠릿 주변부인 것을 특징으로 하는 압접형 반도체 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900017533A 1989-10-31 1990-10-31 압접형 반도체 장치 KR940008214B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP28373689A JPH0744264B2 (ja) 1989-10-31 1989-10-31 圧接型半導体装置
JPP01-283736 1989-10-31

Publications (2)

Publication Number Publication Date
KR910008862A true KR910008862A (ko) 1991-05-31
KR940008214B1 KR940008214B1 (ko) 1994-09-08

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ID=17669439

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Application Number Title Priority Date Filing Date
KR1019900017533A KR940008214B1 (ko) 1989-10-31 1990-10-31 압접형 반도체 장치

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EP (1) EP0428916B1 (ko)
JP (1) JPH0744264B2 (ko)
KR (1) KR940008214B1 (ko)
DE (1) DE69031935T2 (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3180863B2 (ja) * 1993-07-27 2001-06-25 富士電機株式会社 加圧接触形半導体装置およびその組立方法
JP4743447B2 (ja) 2008-05-23 2011-08-10 三菱電機株式会社 半導体装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1124176A (en) * 1966-02-24 1968-08-21 Licentia Gmbh Improvements in semiconductor switching devices
US4620211A (en) * 1984-08-13 1986-10-28 General Electric Company Method of reducing the current gain of an inherent bipolar transistor in an insulated-gate semiconductor device and resulting devices
JPH079919B2 (ja) * 1985-09-20 1995-02-01 三菱電機株式会社 半導体装置

Also Published As

Publication number Publication date
DE69031935T2 (de) 1998-05-28
JPH0744264B2 (ja) 1995-05-15
EP0428916B1 (en) 1998-01-14
DE69031935D1 (de) 1998-02-19
JPH03145161A (ja) 1991-06-20
EP0428916A1 (en) 1991-05-29
KR940008214B1 (ko) 1994-09-08

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