KR910007118A - 핀과 반도체 칩사이에 개선된 연결을 갖는 집적 장치 및 그의 제조 방법 - Google Patents

핀과 반도체 칩사이에 개선된 연결을 갖는 집적 장치 및 그의 제조 방법 Download PDF

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Publication number
KR910007118A
KR910007118A KR1019900014960A KR900014960A KR910007118A KR 910007118 A KR910007118 A KR 910007118A KR 1019900014960 A KR1019900014960 A KR 1019900014960A KR 900014960 A KR900014960 A KR 900014960A KR 910007118 A KR910007118 A KR 910007118A
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South Korea
Prior art keywords
integrated device
pin
gold
connection
main component
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KR1019900014960A
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English (en)
Inventor
카를로 치니
안젤로 맛시로니
루이지 시스티
Original Assignee
원본미기재
엣세지엣세 톰슨마이크로일렉트로닉스 엣세. 알. 엘
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Publication of KR910007118A publication Critical patent/KR910007118A/ko

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    • H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
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Abstract

내용 없음

Description

핀과 반도체 칩사이에 개선된 연결을 갖는 집적 장치 및 그의 제조 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 집적장치의 핀 도금을 보여주는 개략도.

Claims (10)

  1. 전자부품을 집적시키는 반도체 칩(2)과 핀(5)사이의 개선된 연결을 갖는 집적 장치에 있어서, 상기 연결이 상이한 재료로 만들어진 와이어(8,9)에 의해 구성되는 것을 특징으로 하는 집적장치.
  2. 제1항에 있어서, 상이한 재료로 만들어진 상기 와이어(8,9)가 다른 직경을 갖는 것을 특징으로 하는 집적장치.
  3. 제1항 및 제2항에 있어서, 상기 상이한 재료가 전력연결(9)로는 알루미늄 또는 알루미늄이 주성분인 합금으로 구성되고 신호 연결(8)로는 금 또는 금이 주성분인 합금으로 구성되는 것을 특징으로 하는 집적장치.
  4. 제1항에 있어서, 상기 핀(5)이 부분적으로 금의 층(7)으로 도금되는 것을 특징으로 하는 집적장치.
  5. 하나 또는 그 이상의 전항에 있어서, 상기 금 도금이 집적장치의 패키지(13)에 봉입되는 핀(5)의 끝(7)에만 제공되는 특징이 있는 집적장치.
  6. 반도체 칩과 핀 사이에 연결을 실행하는데 있어서, 와이어 납땜의 단계를 포함하는 집적장치 제조방법에 있어서, 상기 납땜 단계가 상이한 재료로 만들어진 와이어(8,9)로 수행되는 것을 특징으로 하는 집적장치.
  7. 제6항에 있어서, 상기 재료가 신호연결(8)용으로 금과 금이 주성분인 합금으로 구성되고 전력 연결(9)용으로는 알루미늄과 알루미늄이 주성분인 합금으로 구성되는 것을 특징으로 하는 집적장치 제조 방법.
  8. 제6항 및 제7항에 있어서, 금이 주성분인 와이어(8)가 더모소닉(thermosonic)방법으로 납땜되고 알루미늄이 주성분이 와이어(9)가 초음파 방법으로 납땜되는 것을 특징으로 하는 집적장치 제조 방법.
  9. 제6항 내지 제8항중 하나 또는 그 이상의 항에 있어서, 상기 핀(5)이 납땜 이전에 선택적으로 금이 도금되는 것을 특징으로 하는 집적장치 제조 방법.
  10. 제6항 내지 제9항중 하나 또는 그 이상의 항에 있어서, 최소한 핀의 외부 끝(6)을 덮기에 적합한 보호 마스크를 사용하여 상기도금이 아연 도금으로 수행되는 것을 특징으로 하는 집적장치 제조 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임
KR1019900014960A 1989-09-21 1990-09-20 핀과 반도체 칩사이에 개선된 연결을 갖는 집적 장치 및 그의 제조 방법 KR910007118A (ko)

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IT21783A/89 1989-09-21
IT8921783A IT1233008B (it) 1989-09-21 1989-09-21 Dispositivo integrato con connessioni perfezionate fra i terminali e la piastrina di materiale semiconduttore integrante componenti elettronici

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Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0760839B2 (ja) * 1990-03-15 1995-06-28 株式会社東芝 半導体装置
US5281772A (en) * 1991-10-28 1994-01-25 Delco Electronics Corporation Electrical connector having energy-formed solder stops and methods of making and using the same
JP2783133B2 (ja) * 1993-09-29 1998-08-06 松下電器産業株式会社 ワイヤボンディング前処理方法
EP0722198A3 (en) * 1995-01-10 1996-10-23 Texas Instruments Inc Bond wire with integrated contact area
US5530284A (en) * 1995-03-06 1996-06-25 Motorola, Inc. Semiconductor leadframe structure compatible with differing bond wire materials
US8033838B2 (en) 1996-02-21 2011-10-11 Formfactor, Inc. Microelectronic contact structure
JP2000503491A (ja) * 1996-11-11 2000-03-21 シーメンス アクチエンゲゼルシヤフト パワースイッチのためのチップと回路板とのパワー接続部の最適化
US6997931B2 (en) * 2001-02-02 2006-02-14 Lsi Solutions, Inc. System for endoscopic suturing
US20030155635A1 (en) * 2002-02-21 2003-08-21 Matsushita Electric Industrial Co., Ltd. Semiconductor device, method for designing the same and recording medium that can be read by computer in which program for designing semiconductor device is recorded
US7304393B1 (en) * 2004-03-24 2007-12-04 Microtune (Texas), L.P. System and method for coupling internal circuitry of an integrated circuit to the integrated circuit's package pins
US8105932B2 (en) * 2004-08-19 2012-01-31 Infineon Technologies Ag Mixed wire semiconductor lead frame package
EP2002478B1 (en) 2006-03-23 2016-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Electrically enhanced wirebond package
JP5011879B2 (ja) * 2006-08-09 2012-08-29 サンケン電気株式会社 半導体装置及びリードフレーム組立体の製法
US8125060B2 (en) 2006-12-08 2012-02-28 Infineon Technologies Ag Electronic component with layered frame
US7960845B2 (en) 2008-01-03 2011-06-14 Linear Technology Corporation Flexible contactless wire bonding structure and methodology for semiconductor device
JP2008235911A (ja) * 2008-03-26 2008-10-02 Murata Mfg Co Ltd 低温焼成セラミック回路基板及びその製造方法
US7902665B2 (en) 2008-09-02 2011-03-08 Linear Technology Corporation Semiconductor device having a suspended isolating interconnect
JP6121692B2 (ja) * 2012-11-05 2017-04-26 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2018128487A (ja) * 2017-02-06 2018-08-16 セイコーエプソン株式会社 電気光学パネル、電気光学装置および電子機器

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5434678A (en) * 1977-08-22 1979-03-14 Matsushita Electronics Corp Semiconductor device
JPS553641A (en) * 1978-06-23 1980-01-11 Hitachi Ltd Lead frame
US4458297A (en) * 1981-01-16 1984-07-03 Mosaic Systems, Inc. Universal interconnection substrate
JPS588951A (ja) * 1981-07-09 1983-01-19 Sanyo Electric Co Ltd 太陽熱貯湯装置
JPS59172757A (ja) * 1983-03-22 1984-09-29 Matsushita Electronics Corp 半導体装置
JPS6189643A (ja) * 1984-10-09 1986-05-07 Toshiba Corp 半導体装置及びその製造方法
JPS6396947A (ja) * 1986-10-13 1988-04-27 Mitsubishi Electric Corp 半導体装置用リ−ドフレ−ム
US4818895A (en) * 1987-11-13 1989-04-04 Kaufman Lance R Direct current sense lead

Also Published As

Publication number Publication date
EP0418749B1 (en) 1995-11-29
IT8921783A0 (it) 1989-09-21
IT1233008B (it) 1992-03-14
EP0418749A2 (en) 1991-03-27
US5165590A (en) 1992-11-24
EP0418749A3 (en) 1991-05-29
JPH03131043A (ja) 1991-06-04
DE69023858T2 (de) 1996-08-22
DE69023858D1 (de) 1996-01-11
US5113239A (en) 1992-05-12

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