KR910004731B1 - Semiconductor memory device capable of multi direction data access - Google Patents

Semiconductor memory device capable of multi direction data access

Info

Publication number: KR910004731B1
Authority: KR; South Korea
Prior art keywords: memory device; semiconductor memory; device capable; data access; direction data
Prior art date: 1986-08-22

Application number

KR8709202A

Other languages

English (en)

Other versions

KR880003326A (ko

Inventor

Kazya Kobayasi

Kiyoshi Miyasaka

Junzi Okawa

Original Assignee

Fujitsu Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1986-08-22

Filing date

1987-08-22

Publication date

1991-07-10

1986-08-22 Priority claimed from JP61196529A external-priority patent/JPS6353795A/ja

1986-12-04 Priority claimed from JP61289677A external-priority patent/JPS63142592A/ja

1986-12-04 Priority claimed from JP61289680A external-priority patent/JPS63142593A/ja

1987-01-19 Priority claimed from JP62009493A external-priority patent/JPH0612615B2/ja

1987-08-22 Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd

1988-05-16 Publication of KR880003326A publication Critical patent/KR880003326A/ko

1991-07-10 Application granted granted Critical

1991-07-10 Publication of KR910004731B1 publication Critical patent/KR910004731B1/ko

Links

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Dram (AREA)

KR8709202A 1986-08-22 1987-08-22 Semiconductor memory device capable of multi direction data access KR910004731B1 (en)

Applications Claiming Priority (8)

Application Number	Priority Date	Filing Date	Title
JP61196529A JPS6353795A (ja)	1986-08-22	1986-08-22	多次元アクセス半導体メモリ
JP196529		1986-08-22
JP61289677A JPS63142592A (ja)	1986-12-04	1986-12-04	多次元アクセスメモリ
JP61289680A JPS63142593A (ja)	1986-12-04	1986-12-04	多次元アクセスメモリ
JP289677		1986-12-14
JP289680		1986-12-24
JP009493		1987-01-19
JP62009493A JPH0612615B2 (ja)	1987-01-19	1987-01-19	多次元アクセスメモリ

Publications (2)

Publication Number	Publication Date
KR880003326A KR880003326A (ko)	1988-05-16
KR910004731B1 true KR910004731B1 (en)	1991-07-10

Family

ID=27455192

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
KR8709202A KR910004731B1 (en)	1986-08-22	1987-08-22	Semiconductor memory device capable of multi direction data access

Country Status (4)

Country	Link
US (2)	US5379264A (ko)
EP (1)	EP0257987B1 (ko)
KR (1)	KR910004731B1 (ko)
DE (1)	DE3774369D1 (ko)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP3293935B2 (ja) *	1993-03-12	2002-06-17	株式会社東芝	並列ビットテストモード内蔵半導体メモリ
US5497354A (en) *	1994-06-02	1996-03-05	Intel Corporation	Bit map addressing schemes for flash memory
US5701143A (en) *	1995-01-31	1997-12-23	Cirrus Logic, Inc.	Circuits, systems and methods for improving row select speed in a row select memory device
JP3577148B2 (ja) *	1995-11-28	2004-10-13	株式会社ルネサステクノロジ	半導体記憶装置
JP4262789B2 (ja) *	1996-12-17	2009-05-13	富士通マイクロエレクトロニクス株式会社	半導体記憶装置
DE19723990A1 (de)	1997-06-06	1998-12-10	Henkel Kgaa	Schaumarmes Reinigungsmittel
US6021087A (en) *	1997-09-25	2000-02-01	Texas Instruments Incorporated	Dynamic logic memory addressing circuits, systems, and methods with decoder fan out greater than 2:1
KR100385370B1 (ko) *	1998-07-21	2003-05-27	시게이트 테크놀로지 엘엘씨	개선된 메모리 시스템 장치 및 방법
JP2001043671A (ja) *	1999-07-28	2001-02-16	Oki Micro Design Co Ltd	半導体装置
US6704828B1 (en) *	2000-08-31	2004-03-09	Micron Technology, Inc.	System and method for implementing data pre-fetch having reduced data lines and/or higher data rates
JP4058045B2 (ja) *	2005-01-05	2008-03-05	株式会社東芝	半導体記憶装置
US7099202B1 (en) *	2005-04-08	2006-08-29	Atmel Corporation	Y-mux splitting scheme
US9323654B2 (en) *	2013-07-17	2016-04-26	Infineon Technologies Ag	Memory access using address bit permutation
US20180303041A1 (en) *	2017-04-21	2018-10-25	Matthew P. Braasch	Planter insert

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3643236A (en) *	1969-12-19	1972-02-15	Ibm	Storage having a plurality of simultaneously accessible locations
GB1469231A (en) *	1973-02-07	1977-04-06	Mullard Ltd	Memory arrangement for a page printer
US3781828A (en) *	1972-05-04	1973-12-25	Ibm	Three-dimensionally addressed memory
US4051551A (en) *	1976-05-03	1977-09-27	Burroughs Corporation	Multidimensional parallel access computer memory system
JPS5525860A (en) *	1978-08-15	1980-02-23	Toshiba Corp	Memory system
JPS6014438B2 (ja) *	1979-08-29	1985-04-13	株式会社東芝	不揮発性半導体メモリ−
JPS56140390A (en) *	1980-04-04	1981-11-02	Nippon Electric Co	Picture memory
JPS5771574A (en) *	1980-10-21	1982-05-04	Nec Corp	Siemconductor memory circuit
JPS5837948A (ja) *	1981-08-31	1983-03-05	Toshiba Corp	積層半導体記憶装置
JPS58130495A (ja) *	1982-01-29	1983-08-03	Toshiba Corp	半導体記憶装置
US4667308A (en) *	1982-07-21	1987-05-19	Marconi Avionics Limited	Multi-dimensional-access memory system with combined data rotation and multiplexing
DD208499A3 (de) *	1982-10-26	1984-05-02	Adw Ddr	Mehrdimensionaler paralleler speicher
JPS5998365A (ja) *	1982-11-27	1984-06-06	Shigeto Suzuki	複数同時アクセス型記憶装置
JPS59180324A (ja) *	1983-03-31	1984-10-13	Fujitsu Ltd	半導体記憶装置
JPS60113396A (ja) *	1983-11-25	1985-06-19	Toshiba Corp	メモリｌｓｉ
US4729119A (en) *	1984-05-21	1988-03-01	General Computer Corporation	Apparatus and methods for processing data through a random access memory system
EP0166642A3 (en) *	1984-05-30	1989-02-22	Fujitsu Limited	Block-divided semiconductor memory device having divided bit lines
EP0179605B1 (en) *	1984-10-17	1992-08-19	Fujitsu Limited	Semiconductor memory device having a serial data input circuit and a serial data output circuit
US4742474A (en) *	1985-04-05	1988-05-03	Tektronix, Inc.	Variable access frame buffer memory
JPS62194561A (ja) *	1986-02-21	1987-08-27	Toshiba Corp	半導体記憶装置
DE3605641A1 (de) *	1986-02-21	1987-08-27	Bodmaier Stefan	Vorrichtung zum aufspannen, einrichten und einwechseln von schneidwerkzeugen

1987
- 1987-08-20 DE DE8787307369T patent/DE3774369D1/de not_active Expired - Fee Related
- 1987-08-20 EP EP87307369A patent/EP0257987B1/en not_active Expired - Lifetime
- 1987-08-22 KR KR8709202A patent/KR910004731B1/ko not_active IP Right Cessation
1994
- 1994-03-17 US US08/214,161 patent/US5379264A/en not_active Expired - Fee Related
- 1994-09-21 US US08/309,647 patent/US5463582A/en not_active Expired - Fee Related

Also Published As

Publication number	Publication date
US5379264A (en)	1995-01-03
KR880003326A (ko)	1988-05-16
EP0257987A1 (en)	1988-03-02
US5463582A (en)	1995-10-31
EP0257987B1 (en)	1991-11-06
DE3774369D1 (de)	1991-12-12

Legal Events

Date	Code	Title
1987-08-22	A201	Request for examination
1990-08-31	E902	Notification of reason for refusal
1991-06-12	G160	Decision to publish patent application
1991-10-02	E701	Decision to grant or registration of patent right
1991-11-18	GRNT	Written decision to grant
1994-07-11	LAPS	Lapse due to unpaid annual fee

Publication	Publication Date	Title
EP0253631A3 (en)	1989-08-30	Semiconductor memory device
EP0430682A3 (en)	1992-10-21	Serial access semiconductor memory devices
EP0202873A3 (en)	1988-08-03	Semiconductor memory device
EP0198590A3 (en)	1987-04-01	Semiconductor memory device
EP0249548A3 (en)	1989-07-05	Dual-port semiconductor memory device
SG25395G (en)	1995-09-01	Semiconductor memory device
EP0234891A3 (en)	1987-11-25	Semiconductor memory device
EP0523760A3 (en)	1993-03-31	Serial accessed semiconductor memory
EP0260983A3 (en)	1990-08-29	Semiconductor memory device having shared bit lines
EP0238228A3 (en)	1989-07-05	Semiconductor memory
EP0239187A3 (en)	1990-10-03	Semiconductor memory device
EP0209069A3 (en)	1988-09-07	Semiconductor memory device
EP0197505A3 (en)	1988-07-27	Semiconductor memory device
KR910004731B1 (en)	1991-07-10	Semiconductor memory device capable of multi direction data access
EP0269106A3 (en)	1990-07-04	Semiconductor memory device
EP0251559A3 (en)	1990-07-18	Semiconductor memory device
KR940008144B1 (en)	1994-09-03	Semiconductor memory device
EP0249413A3 (en)	1989-12-27	Semiconductor memory device
EP0240155A3 (en)	1990-04-25	Semiconductor memory device
EP0237030A3 (en)	1990-02-07	Semiconductor memory having high-speed serial access scheme
GB2184290B (en)	1990-02-07	Semiconductor memory devices
EP0194939A3 (en)	1988-12-21	Semiconductor memory device
EP0197639A3 (en)	1988-10-12	Semiconductor memory device
EP0213835A3 (en)	1989-05-24	Semiconductor memory device
EP0319432A3 (en)	1990-11-28	Semiconductor memory device with serial access memory