KR900005783B1 - Ion beam cutting method and device thereof for semiconductor device - Google Patents
Ion beam cutting method and device thereof for semiconductor deviceInfo
- Publication number
- KR900005783B1 KR900005783B1 KR8602240A KR860002240A KR900005783B1 KR 900005783 B1 KR900005783 B1 KR 900005783B1 KR 8602240 A KR8602240 A KR 8602240A KR 860002240 A KR860002240 A KR 860002240A KR 900005783 B1 KR900005783 B1 KR 900005783B1
- Authority
- KR
- South Korea
- Prior art keywords
- ion beam
- semiconductor device
- ion
- layer
- cutting method
- Prior art date
Links
- 238000010884 ion-beam technique Methods 0.000 title abstract 4
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000000034 method Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 235000010627 Phaseolus vulgaris Nutrition 0.000 abstract 1
- 244000046052 Phaseolus vulgaris Species 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Electron Sources, Ion Sources (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60060573A JP2539359B2 (ja) | 1985-03-27 | 1985-03-27 | 半導体装置へのイオンビ−ム加工方法およびその装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR900005783B1 true KR900005783B1 (en) | 1990-08-11 |
Family
ID=13146134
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR8602240A KR900005783B1 (en) | 1985-03-27 | 1986-03-26 | Ion beam cutting method and device thereof for semiconductor device |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2539359B2 (ja) |
| KR (1) | KR900005783B1 (ja) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6753253B1 (en) * | 1986-06-18 | 2004-06-22 | Hitachi, Ltd. | Method of making wiring and logic corrections on a semiconductor device by use of focused ion beams |
| JPH0316125A (ja) * | 1989-03-30 | 1991-01-24 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4358338A (en) * | 1980-05-16 | 1982-11-09 | Varian Associates, Inc. | End point detection method for physical etching process |
| JPS58202038A (ja) * | 1982-05-21 | 1983-11-25 | Hitachi Ltd | イオンビ−ム加工装置 |
| JPS59208830A (ja) * | 1983-05-13 | 1984-11-27 | Hitachi Ltd | イオンビ−ム加工方法およびその装置 |
| JPS60200529A (ja) * | 1984-03-24 | 1985-10-11 | Mitsubishi Electric Corp | イオンビ−ムによるエツチング加工方法 |
-
1985
- 1985-03-27 JP JP60060573A patent/JP2539359B2/ja not_active Expired - Lifetime
-
1986
- 1986-03-26 KR KR8602240A patent/KR900005783B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61220330A (ja) | 1986-09-30 |
| JP2539359B2 (ja) | 1996-10-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| G160 | Decision to publish patent application | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 19911226 Year of fee payment: 4 |
|
| LAPS | Lapse due to unpaid annual fee |