KR890001166A - 표면 처리장치 - Google Patents

표면 처리장치 Download PDF

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Publication number
KR890001166A
KR890001166A KR1019880006784A KR880006784A KR890001166A KR 890001166 A KR890001166 A KR 890001166A KR 1019880006784 A KR1019880006784 A KR 1019880006784A KR 880006784 A KR880006784 A KR 880006784A KR 890001166 A KR890001166 A KR 890001166A
Authority
KR
South Korea
Prior art keywords
surface treatment
treatment apparatus
swivel
gap
reaction gas
Prior art date
Application number
KR1019880006784A
Other languages
English (en)
Other versions
KR910007110B1 (ko
Inventor
겡이치 가와스미
아키오 후나고시
Original Assignee
미타 가츠시게
가부시키가이샤 히타치세이사쿠쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미타 가츠시게, 가부시키가이샤 히타치세이사쿠쇼 filed Critical 미타 가츠시게
Publication of KR890001166A publication Critical patent/KR890001166A/ko
Application granted granted Critical
Publication of KR910007110B1 publication Critical patent/KR910007110B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

내용 없음

Description

표면 처리장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 본원 발명에 의한 표면 처리 장치의 일실시예를 나타내는 요부 설명도.
제 2 도는 상기 실시예에 있어서의 레지스트 제거의 결과를 나타내는 도면.

Claims (8)

  1. 배기할 수 있는 처리실과, 상기 처리실내에 설치되고 또한 처리되어야 할 피처리물을 얹어 놓은 회전대와 상기 회전대와의 사이에 처리공간을 형성하기 위해 회전대와 대향하여 상기 피처물과의 사이의 갭이 0.5㎜를 초과하지 않도록 배설된 갭제어수단과 상기 처리공간에 산소를 함유하는 반응개스를 공급하기 위해 상기 갭제어수단에 설치된 개스 공급수단과, 상기 반응 개스중의 산소를 여기(勵起)산소원자로여기하기위해 상기 갭제어수단 의 상기 피처리물과 반대측에 설치된 개스여기수단을 구비한 표면 처리 장치.
  2. 제 1 항에 있어서, 상기 개스여기 수단이 열원 및 광원중의 최소한 한쪽인 표면 처리 장치.
  3. 제 1 항에 있어서, 상기 회전대가 히터를 내장하고 있는 표면 처리 장치.
  4. 제 1 항에 있어서, 상기 반응 개스가 오존을 함유하는 개스로 이루어지는 표면 처리 장치.
  5. 제 1 항에 있어서, 상기 광원이 자외선광원인 표면 처리 장치.
  6. 제 1 항에 있어서, 상기 갭체어 수단이 석영판으로 이루어지는 표면 처리 장치.
  7. 배기할 수 있는 처리실과, 상기 처리실내에 설치되고, 또한 처리되어야 할 피처리물을 얹어 놓는 회전대와, 상기 회전대와의 사이에 처리 공간을 형성하기 위해 상기 회전대와 대향하여 상기 피처리물과의 사이의 갭이 0.5㎜를 초과하지 않도록 설치된 석영판과, 상기 처리 공간에 오전을 함유하는 반응 개스를 공급하기 위해 상기 석영판에 설치된 개스 공급수단과, 상기 반응 개스를 여기하기 위해 상기 석영판의 상기 피처리물과 반대측에 설치된 자외선 광원을 구비한 표면 처리 장치.
  8. 제 7항에 있어서, 상기 회전대가 히터를 내장하고 있는 표면 처리 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880006784A 1987-06-26 1988-06-07 표면처리장치 KR910007110B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP62157617A JP2801003B2 (ja) 1987-06-26 1987-06-26 有機物除去装置
JP?62-157617 1987-06-26
JP62-157617 1987-06-26

Publications (2)

Publication Number Publication Date
KR890001166A true KR890001166A (ko) 1989-03-18
KR910007110B1 KR910007110B1 (ko) 1991-09-18

Family

ID=15653644

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880006784A KR910007110B1 (ko) 1987-06-26 1988-06-07 표면처리장치

Country Status (4)

Country Link
US (1) US4936940A (ko)
JP (1) JP2801003B2 (ko)
KR (1) KR910007110B1 (ko)
DE (1) DE3821093A1 (ko)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5246526A (en) * 1989-06-29 1993-09-21 Hitachi, Ltd. Surface treatment apparatus
JPH088243B2 (ja) * 1989-12-13 1996-01-29 三菱電機株式会社 表面クリーニング装置及びその方法
US6375741B2 (en) * 1991-03-06 2002-04-23 Timothy J. Reardon Semiconductor processing spray coating apparatus
US5222310A (en) * 1990-05-18 1993-06-29 Semitool, Inc. Single wafer processor with a frame
US5205051A (en) * 1990-08-28 1993-04-27 Materials Research Corporation Method of preventing condensation of air borne moisture onto objects in a vessel during pumping thereof
US5237756A (en) * 1990-08-28 1993-08-24 Materials Research Corporation Method and apparatus for reducing particulate contamination
DE4238586A1 (de) * 1992-11-16 1994-05-19 Inst Halbleiterphysik Gmbh Vorrichtung zur Feinstreinigung scheibenförmiger Objekte
US5489341A (en) * 1993-08-23 1996-02-06 Semitool, Inc. Semiconductor processing with non-jetting fluid stream discharge array
US6015503A (en) * 1994-06-14 2000-01-18 Fsi International, Inc. Method and apparatus for surface conditioning
JP2885150B2 (ja) * 1995-10-13 1999-04-19 日本電気株式会社 ドライエッチング装置のドライクリーニング方法
US7025831B1 (en) 1995-12-21 2006-04-11 Fsi International, Inc. Apparatus for surface conditioning
US6165688A (en) * 1996-05-15 2000-12-26 The United States Of America, As Represented By The Secretary Of Commerce Method of fabricating of structures by metastable atom impact desorption of a passivating layer
US6074895A (en) 1997-09-23 2000-06-13 International Business Machines Corporation Method of forming a flip chip assembly
US6165273A (en) 1997-10-21 2000-12-26 Fsi International Inc. Equipment for UV wafer heating and photochemistry
US5953827A (en) * 1997-11-05 1999-09-21 Applied Materials, Inc. Magnetron with cooling system for process chamber of processing system
US6013316A (en) * 1998-02-07 2000-01-11 Odme Disc master drying cover assembly
JP2000036488A (ja) 1998-07-21 2000-02-02 Speedfam-Ipec Co Ltd ウエハ平坦化方法及びそのシステム
US6099762A (en) 1998-12-21 2000-08-08 Lewis; Paul E. Method for improving lubricating surfaces on disks
US6207026B1 (en) 1999-10-13 2001-03-27 Applied Materials, Inc. Magnetron with cooling system for substrate processing system
KR100338768B1 (ko) * 1999-10-25 2002-05-30 윤종용 산화막 제거방법 및 산화막 제거를 위한 반도체 제조 장치
WO2002091809A2 (fr) * 2001-05-03 2002-11-14 Apit Corp. S.A. Procede et dispositif de generation d'un rideau de gaz active pour traitement de surface
JP6074634B1 (ja) 2015-07-16 2017-02-08 パナソニックＩｐマネジメント株式会社 電気ケーブル

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6064436A (ja) * 1983-09-19 1985-04-13 Fujitsu Ltd スピンドライヤ
JPS60193340A (ja) * 1984-03-15 1985-10-01 Toshiba Corp プラズマエツチング装置
DE3502112A1 (de) * 1985-01-23 1986-07-24 Robert Bosch Gmbh, 7000 Stuttgart Einrichtung zum einspritzen von kraftstoff in einen brennraum einer brennkraftmaschine
JPS61223839A (ja) * 1985-03-29 1986-10-04 Fujitsu Ltd レジスト除去方法
JPH0628254B2 (ja) * 1985-07-19 1994-04-13 フュージョン・システムズ・コーポレーション フオトレジストの剥離装置
JP2588508B2 (ja) * 1986-05-23 1997-03-05 日立東京エレクトロニクス株式会社 処理装置

Also Published As

Publication number Publication date
DE3821093A1 (de) 1989-01-12
US4936940A (en) 1990-06-26
KR910007110B1 (ko) 1991-09-18
JP2801003B2 (ja) 1998-09-21
JPS644022A (en) 1989-01-09

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