KR880011941A - 수광소자 - Google Patents

수광소자 Download PDF

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Publication number
KR880011941A
KR880011941A KR1019880003131A KR880003131A KR880011941A KR 880011941 A KR880011941 A KR 880011941A KR 1019880003131 A KR1019880003131 A KR 1019880003131A KR 880003131 A KR880003131 A KR 880003131A KR 880011941 A KR880011941 A KR 880011941A
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KR
South Korea
Prior art keywords
light receiving
light
light source
cell
receiving element
Prior art date
Application number
KR1019880003131A
Other languages
English (en)
Other versions
KR910004992B1 (ko
Inventor
슈우이찌로오 야마구지
유끼오 이다까
다께시 마쯔모도
다쯔히꼬 이리에
Original Assignee
후지이 사다오
마쓰시다 덴꼬오 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 후지이 사다오, 마쓰시다 덴꼬오 가부시끼가이샤 filed Critical 후지이 사다오
Publication of KR880011941A publication Critical patent/KR880011941A/ko
Application granted granted Critical
Publication of KR910004992B1 publication Critical patent/KR910004992B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

내용없음

Description

수광소자
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 수광소자의 실시예에서 수광셀이 배열된 상태를 보여주는 평면도.
제2도는 제1도의 수광소자가 사용된 예중에서 전형적인 것으로서 반도체 스위칭 장치를 도식적으로 보여주는 사시도.
제3도는 제2도의 수위칭 장치에서의 광원과 수광소자간의 위치 관계를 보여주기 위한 예시도.

Claims (4)

  1. 상호 직렬로 접속되며 광원에 광접속되도록 배열된 다수의 수광세로 구성되며, 사기 수광셀은 각각 상기 광원으로부터 입력된 광의 강도에 따라 변하는 표면영역을 갖는 것을 특징으로 하는 수광소자.
  2. 제1항에 있어서, 상기 수광셀상기 표면영역은 상기 광원에 상대적으로 더 근접하게 위치한 셀에 대해서는 더 작게 만들어져서 상기 광입력강도가 더 크게 될것이지망 광원으로부터 상대적으로 더 멀리 위치한 셀에 대해서는 더 크게 만들어져서 더 작은 광입력 강도가 되도록 한 것을 특징으로 한 소자.
  3. 제1항에 있어서, 상기 수광셀의 모두의 총수광표면은 상기 광원에 수직 대향된 것을 특징으로 하는 소자.
  4. 제1항에 있어서, 상기 수광셀의 모두의 총수광 표면은 상기 광원에 대해 레터럴하게 위치된 것을 특징으로 하는 소자.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880003131A 1987-03-25 1988-03-23 수광소자 KR910004992B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP4379587 1987-03-25
JP62-43795 1987-03-25
JP62-43795(4) 1987-03-25

Publications (2)

Publication Number Publication Date
KR880011941A true KR880011941A (ko) 1988-10-31
KR910004992B1 KR910004992B1 (ko) 1991-07-20

Family

ID=12673679

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880003131A KR910004992B1 (ko) 1987-03-25 1988-03-23 수광소자

Country Status (5)

Country Link
US (1) US4805006A (ko)
KR (1) KR910004992B1 (ko)
DE (1) DE3810204A1 (ko)
FR (1) FR2613135B1 (ko)
GB (1) GB2203895B (ko)

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US5173759A (en) * 1990-02-06 1992-12-22 Kyocera Corporation Array of light emitting devices or photo detectors with marker regions
US5460659A (en) * 1993-12-10 1995-10-24 Spectrolab, Inc. Concentrating photovoltaic module and fabrication method
TW475330B (en) * 1999-10-29 2002-02-01 Hewlett Packard Co Photosensor array with multiple different sensor areas
US6894812B1 (en) 2000-10-31 2005-05-17 Hewlett-Packard Development Company, L.P. Photosensor assembly with shared structures
AUPR174800A0 (en) 2000-11-29 2000-12-21 Australian National University, The Semiconductor processing
JP4530662B2 (ja) * 2001-11-29 2010-08-25 トランスフォーム ソーラー ピーティーワイ リミテッド 半導体テクスチャ化プロセス
US6891146B2 (en) * 2002-07-30 2005-05-10 Hewlett-Packard Development Company, L.P. Photosensor assembly with shared charge transfer registers
US8853527B2 (en) * 2007-02-16 2014-10-07 Nanogram Corporation Solar cell structures, photovoltaic panels and corresponding processes
US8082755B2 (en) 2008-05-12 2011-12-27 Arizona Board Of Regents Method of manufacturing large dish reflectors for a solar concentrator apparatus
US20100126555A1 (en) * 2008-11-20 2010-05-27 Hoozad Inc. Concentrating photovoltaic photo-current balancing system
KR20100088016A (ko) * 2009-01-29 2010-08-06 삼성전자주식회사 태양 전지 모듈 및 그 제조 방법
JP5806994B2 (ja) * 2012-09-21 2015-11-10 株式会社東芝 光結合装置
US9947820B2 (en) * 2014-05-27 2018-04-17 Sunpower Corporation Shingled solar cell panel employing hidden taps
US9780253B2 (en) * 2014-05-27 2017-10-03 Sunpower Corporation Shingled solar cell module
US10090430B2 (en) 2014-05-27 2018-10-02 Sunpower Corporation System for manufacturing a shingled solar cell module
USD1009775S1 (en) 2014-10-15 2024-01-02 Maxeon Solar Pte. Ltd. Solar panel
USD933584S1 (en) 2012-11-08 2021-10-19 Sunpower Corporation Solar panel
WO2014085436A1 (en) 2012-11-30 2014-06-05 Arizona Board Of Regents On Behalf Of University Of Arizona Solar generator with large reflector dishes and concentrator photovoltaic cells in flat arrays
JP5865859B2 (ja) * 2013-03-22 2016-02-17 株式会社東芝 光結合装置
WO2015061323A1 (en) 2013-10-22 2015-04-30 The Arizona Board Of Regents On Behalf Of The University Of Arizona Octohedral frame and tripod for rotating equipment
JP6326871B2 (ja) * 2014-03-06 2018-05-23 セイコーエプソン株式会社 発電装置、時計および発電装置の製造方法
US11482639B2 (en) 2014-05-27 2022-10-25 Sunpower Corporation Shingled solar cell module
US11949026B2 (en) 2014-05-27 2024-04-02 Maxeon Solar Pte. Ltd. Shingled solar cell module
USD999723S1 (en) 2014-10-15 2023-09-26 Sunpower Corporation Solar panel
USD896747S1 (en) 2014-10-15 2020-09-22 Sunpower Corporation Solar panel
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WO2016115502A1 (en) 2015-01-16 2016-07-21 The Arizona Board Of Regents On Behalf Of The University Of Arizona Micro-scale concentrated photovoltaic module
WO2016141041A1 (en) 2015-03-02 2016-09-09 The Arizona Board Of Regents On Behalf Of The University Of Arizona Glass forming mold of adjustable shape
US10861999B2 (en) 2015-04-21 2020-12-08 Sunpower Corporation Shingled solar cell module comprising hidden tap interconnects
WO2016200988A1 (en) 2015-06-12 2016-12-15 The Arizona Board Of Regents On Behalf Of The University Of Arizona Tandem photovoltaic module with diffractive spectral separation
WO2017024038A1 (en) 2015-08-03 2017-02-09 The Arizona Board Of Regents On Behalf Of The University Of Arizona Solar concentrator for a tower-mounted central receiver
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WO2018107164A1 (en) * 2016-12-09 2018-06-14 mPower Technology, Inc. High performance solar cells, arrays and manufacturing processes therefor
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Also Published As

Publication number Publication date
FR2613135B1 (fr) 1994-04-08
GB2203895A (en) 1988-10-26
KR910004992B1 (ko) 1991-07-20
GB8805722D0 (en) 1988-04-07
FR2613135A1 (fr) 1988-09-30
DE3810204A1 (de) 1988-10-06
GB2203895B (en) 1990-05-09
US4805006A (en) 1989-02-14

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