KR870005450A - 반도체층을 통한 전기적 단락이 없는 반도체 장치와 그 제조방법 - Google Patents
반도체층을 통한 전기적 단락이 없는 반도체 장치와 그 제조방법Info
- Publication number
- KR870005450A KR870005450A KR1019860009322A KR860009322A KR870005450A KR 870005450 A KR870005450 A KR 870005450A KR 1019860009322 A KR1019860009322 A KR 1019860009322A KR 860009322 A KR860009322 A KR 860009322A KR 870005450 A KR870005450 A KR 870005450A
- Authority
- KR
- South Korea
- Prior art keywords
- manufacturing
- same
- short circuit
- electrical short
- semiconductor device
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/208—Particular post-treatment of the devices, e.g. annealing, short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02021—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S136/00—Batteries: thermoelectric and photoelectric
- Y10S136/29—Testing, calibrating, treating, e.g. aging
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60-248640 | 1985-11-06 | ||
JP60248641A JPS62108580A (ja) | 1985-11-06 | 1985-11-06 | 光電変換装置作製用電気回路装置 |
JP60-248641 | 1985-11-06 | ||
JP60248640A JPH0620148B2 (ja) | 1985-11-06 | 1985-11-06 | 半導体装置作製方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR870005450A true KR870005450A (ko) | 1987-06-09 |
KR900006772B1 KR900006772B1 (ko) | 1990-09-21 |
Family
ID=26538880
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019860009322A KR900006772B1 (ko) | 1985-11-06 | 1986-11-05 | 반도체층을 통한 전기적 단락이 없는 반도체 장치와 그 제조방법 |
Country Status (3)
Country | Link |
---|---|
US (1) | US4725558A (ko) |
KR (1) | KR900006772B1 (ko) |
CN (2) | CN1003481B (ko) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU583423B2 (en) * | 1985-09-21 | 1989-04-27 | Semiconductor Energy Laboratory Co. Ltd. | Semiconductor device free from the electrical shortage through a semiconductor layer and method for manufacturing same |
US4774193A (en) * | 1986-03-11 | 1988-09-27 | Siemens Aktiengesellschaft | Method for avoiding shorts in the manufacture of layered electrical components |
US5112409A (en) * | 1991-01-23 | 1992-05-12 | Solarex Corporation | Solar cells with reduced recombination under grid lines, and method of manufacturing same |
US6348807B2 (en) * | 1998-11-24 | 2002-02-19 | Advanced Micro Devices, Inc. | Method and system for utilizing multiple thermocouples to obtain a temperature contour map |
TW530427B (en) * | 2000-10-10 | 2003-05-01 | Semiconductor Energy Lab | Method of fabricating and/or repairing a light emitting device |
US6777249B2 (en) * | 2001-06-01 | 2004-08-17 | Semiconductor Energy Laboratory Co., Ltd. | Method of repairing a light-emitting device, and method of manufacturing a light-emitting device |
US7226332B2 (en) * | 2002-04-30 | 2007-06-05 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and manufacturing method thereof |
US7220603B2 (en) * | 2003-09-19 | 2007-05-22 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing display device and manufacturing apparatus |
US20050212000A1 (en) * | 2004-03-26 | 2005-09-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing light emitting device, and electronic device |
TWI467531B (zh) | 2004-09-16 | 2015-01-01 | Semiconductor Energy Lab | 顯示裝置和其驅動方法 |
US7994021B2 (en) * | 2006-07-28 | 2011-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
US7943287B2 (en) * | 2006-07-28 | 2011-05-17 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing display device |
KR101346246B1 (ko) | 2006-08-24 | 2013-12-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 제작방법 |
US7795154B2 (en) * | 2006-08-25 | 2010-09-14 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device that uses laser ablation, to selectively remove one or more material layers |
US8563431B2 (en) * | 2006-08-25 | 2013-10-22 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US7651896B2 (en) | 2006-08-30 | 2010-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
JP5110830B2 (ja) * | 2006-08-31 | 2012-12-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US7960261B2 (en) * | 2007-03-23 | 2011-06-14 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing crystalline semiconductor film and method for manufacturing thin film transistor |
JPWO2009020073A1 (ja) * | 2007-08-06 | 2010-11-04 | シャープ株式会社 | 薄膜光電変換モジュールの製造方法および製造装置 |
US8574944B2 (en) * | 2008-03-28 | 2013-11-05 | The University Of Toledo | System for selectively filling pin holes, weak shunts and/or scribe lines in photovoltaic devices and photovoltaic cells made thereby |
DE102009022570A1 (de) * | 2009-05-25 | 2010-12-02 | Yamaichi Electronics Deutschland Gmbh | Anschlußdose, Solarpaneel und Verfahren |
US9059347B2 (en) | 2010-06-18 | 2015-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and manufacturing method thereof |
JP2012064933A (ja) | 2010-08-19 | 2012-03-29 | Semiconductor Energy Lab Co Ltd | 光電変換モジュール及びその作製方法 |
US8557614B2 (en) | 2010-12-28 | 2013-10-15 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing lighting device |
GB2561199B (en) * | 2017-04-04 | 2022-04-20 | Power Roll Ltd | Method |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4166918A (en) * | 1978-07-19 | 1979-09-04 | Rca Corporation | Method of removing the effects of electrical shorts and shunts created during the fabrication process of a solar cell |
JPS5574544A (en) * | 1978-11-30 | 1980-06-05 | Mitsubishi Electric Corp | Photo mask correcting method |
US4385971A (en) * | 1981-06-26 | 1983-05-31 | Rca Corporation | Electrolytic etch for eliminating shorts and shunts in large area amorphous silicon solar cells |
US4420497A (en) * | 1981-08-24 | 1983-12-13 | Fairchild Camera And Instrument Corporation | Method of detecting and repairing latent defects in a semiconductor dielectric layer |
US4640002A (en) * | 1982-02-25 | 1987-02-03 | The University Of Delaware | Method and apparatus for increasing the durability and yield of thin film photovoltaic devices |
US4466992A (en) * | 1982-05-28 | 1984-08-21 | Phillips Petroleum Company | Healing pinhole defects in amorphous silicon films |
JPS5935490A (ja) * | 1982-08-24 | 1984-02-27 | Sanyo Electric Co Ltd | 光半導体装置の製造方法 |
US4451970A (en) * | 1982-10-21 | 1984-06-05 | Energy Conversion Devices, Inc. | System and method for eliminating short circuit current paths in photovoltaic devices |
US4464823A (en) * | 1982-10-21 | 1984-08-14 | Energy Conversion Devices, Inc. | Method for eliminating short and latent short circuit current paths in photovoltaic devices |
DE3312053C2 (de) * | 1983-04-02 | 1985-03-28 | Nukem Gmbh, 6450 Hanau | Verfahren zum Verhindern von Kurz- oder Nebenschlüssen in einer großflächigen Dünnschicht-Solarzelle |
JPS6037165A (ja) * | 1983-08-08 | 1985-02-26 | Fuji Electric Corp Res & Dev Ltd | 半導体装置の製造方法 |
JPS6085578A (ja) * | 1983-10-17 | 1985-05-15 | Fuji Xerox Co Ltd | 薄膜光電変換素子の製造方法 |
US4543171A (en) * | 1984-03-22 | 1985-09-24 | Rca Corporation | Method for eliminating defects in a photodetector |
-
1986
- 1986-11-05 KR KR1019860009322A patent/KR900006772B1/ko not_active IP Right Cessation
- 1986-11-06 US US06/927,501 patent/US4725558A/en not_active Expired - Lifetime
- 1986-11-06 CN CN86106409.7A patent/CN1003481B/zh not_active Expired
-
1987
- 1987-04-08 CN CN87102718A patent/CN87102718B/zh not_active Expired
Also Published As
Publication number | Publication date |
---|---|
KR900006772B1 (ko) | 1990-09-21 |
CN87102718A (zh) | 1987-10-28 |
US4725558A (en) | 1988-02-16 |
CN87102718B (zh) | 1988-08-31 |
CN86106409A (zh) | 1987-05-20 |
CN1003481B (zh) | 1989-03-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20060817 Year of fee payment: 17 |
|
EXPY | Expiration of term |