JP5110830B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP5110830B2 JP5110830B2 JP2006235522A JP2006235522A JP5110830B2 JP 5110830 B2 JP5110830 B2 JP 5110830B2 JP 2006235522 A JP2006235522 A JP 2006235522A JP 2006235522 A JP2006235522 A JP 2006235522A JP 5110830 B2 JP5110830 B2 JP 5110830B2
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- 229940056910 silver sulfide Drugs 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005118 spray pyrolysis Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- XXCMBPUMZXRBTN-UHFFFAOYSA-N strontium sulfide Chemical compound [Sr]=S XXCMBPUMZXRBTN-UHFFFAOYSA-N 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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- 229910052726 zirconium Inorganic materials 0.000 description 1
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Description
本実施の形態において、レーザアブレーションによって光透過層に開口部(いわゆるコンタクトホールとなる)を形成するためのレーザビーム照射装置及びレーザームビーム照射方法を提案する。なお、レーザアブレーションとは、レーザビームを物質に対して照射し、該レーザビームが薄膜あるいは物質に吸収されて熱に変換され、該熱により物質が飛ばされて穴が開くあるいは切削する方法をいう。
本実施の形態では、線状ビームを用いたレーザアブレーションによって複数のコンタクトホールを同時に開口するための実施の形態1とは異なる構成のレーザビーム照射装置について説明する。本実施の形態では、マスクとマイクロレンズアレイとを組み合わせることにより、より小さなコンタクトホールを容易に開口することができるレーザビーム照射装置について説明する。
本実施の形態において、レーザアブレーションによって光透過層に複数の開口部(コンタクトホール)を同時に形成するための、実施の形態1又は実施の形態2とは異なる構成のレーザビーム照射装置及びレーザームビーム照射方法を提案する。
線状ビームを用いたレーザアブレーションによって複数のコンタクトホールを同時に開口する際に、該線状ビームを複数に分割するために用いることが可能なマスクとして実施の形態1〜3で示したもの以外にも様々な構成のものを用いることができる。本実施の形態では、該線状ビームを複数に分割するために用いることが可能なマスクの例について図面を用いて説明する。なお、本実施の形態で示したマスクは、実施の形態1〜3で示したマスクのかわりに適宜用いることが可能である。
本実施の形態では、実施の形態1〜4に示したレーザビーム照射装置及び照射方法を用いて表示装置を作製する方法を説明する。
本実施の形態では、表示素子に発光素子を用いる発光表示装置について説明する。本実施の形態における表示装置の作製方法を、図21を用いて詳細に説明する。
本発明を適用して薄膜トランジスタを形成し、該薄膜トランジスタを用いて表示装置を形成することができるが、発光素子を用いて、なおかつ、該発光素子を駆動するトランジスタとしてnチャネル型トランジスタを用いた場合、該発光素子から発せられる光は、下方放射、上方放射、両方放射のいずれかを行う。ここでは、それぞれの場合に応じた発光素子の積層構造について、図22を用いて説明する。
本実施の形態では、上記実施の形態で示した表示装置の表示素子として適用することのできる発光素子の構成を、図23を用いて説明する。
本実施の形態では、上記実施の形態で示した表示装置の表示素子として適用することのできる発光素子の構成を図24及び図25を用いて説明する。
本実施の形態では、表示素子に液晶表示素子を用いる液晶表示装置について説明する。
る。
本発明によって形成される表示装置によって、テレビジョン装置(単にテレビ、又はテレビジョン受信機ともよぶ)を完成させることができる。図30はテレビジョン装置の主要な構成を示すブロック図を示している。
本発明に係る電子機器として、テレビジョン装置(単にテレビ、又はテレビジョン受信機ともよぶ)、デジタルカメラ、デジタルビデオカメラ、携帯電話装置(単に携帯電話機、携帯電話ともよぶ)、PDA等の携帯情報端末、携帯型ゲーム機、コンピュータ用のモニタ、コンピュータ、カーオーディオ等の音響再生装置、家庭用ゲーム機等の記録媒体を備えた画像再生装置等が挙げられる。その具体例について、図32を参照して説明する。
1107 光学装置
1108 落射ミラー
1110 マスク
1111 被照射体
1112 移動機構
1109a ダブレットレンズ
1109b ダブレットレンズ
Claims (5)
- トランジスタ上に絶縁膜を形成する第1の工程と、
前記絶縁膜に開口を形成する第2の工程と、
前記絶縁膜上に、第1の導電性材料を含む第1の液状組成物を吐出して枠状の第1の導電層を形成する第3の工程と、
枠状の前記第1の導電層の内側に第2の導電性材料を含む第2の液状組成物を吐出して第2の導電層を形成する第4の工程と、を有し、
前記第1の導電層は、前記開口を介して前記トランジスタのソース電極又はドレイン電極の一方と電気的に接続されており、
前記トランジスタ、前記開口、前記第1の導電層、及び前記第2の導電層はそれぞれ複数形成され、
複数の前記開口は、前記ソース電極又は前記ドレイン電極の一方と前記絶縁膜とが重なる位置に、複数のレーザビームを照射することにより形成され、
前記複数のレーザビームは、線状レーザビームを複数の穴を有するマスクに照射することにより形成することを特徴とする半導体装置の作製方法。 - 請求項1において、
前記複数の穴は、前記線状レーザビームの長手方向と平行な第1の方向及び前記線状レーザビームの長手方向と垂直な第2の方向に並んで配列されており、
前記第2の方向に前記線状レーザビームを走査させて照射することにより、複数の前記開口を形成することを特徴とする半導体装置の作製方法。 - 請求項1において、
前記複数の穴は、前記線状レーザビームの長手方向と平行な第1の方向にのみ並んで配置されており、
前記マスクと前記絶縁膜との間に配置されたチョッパーフィンを回転させながら、前記線状レーザビームの長手方向と垂直な第2の方向に前記線状レーザビームを走査させて照射することにより、複数の前記開口を形成することを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項3のいずれか一項において、
前記複数の穴と前記絶縁膜との間にマイクロレンズアレイが配置されることを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項4のいずれか一項において、
前記第1の液状組成物の粘度は、前記第2の液状組成物の粘度よりも高く、
前記第1の液状組成物に対する前記絶縁膜のぬれ性は、前記第2の液状組成物に対する前記絶縁膜のぬれ性よりも低いことを特徴とする半導体装置の作製方法。
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