KR850002668A - 반도체 장치 및 그 제조방법 - Google Patents

반도체 장치 및 그 제조방법 Download PDF

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Publication number
KR850002668A
KR850002668A KR1019840005783A KR840005783A KR850002668A KR 850002668 A KR850002668 A KR 850002668A KR 1019840005783 A KR1019840005783 A KR 1019840005783A KR 840005783 A KR840005783 A KR 840005783A KR 850002668 A KR850002668 A KR 850002668A
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South Korea
Prior art keywords
semiconductor device
aluminum
manufacturing
bonding
semiconductor
Prior art date
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KR1019840005783A
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English (en)
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KR920008252B1 (ko
Inventor
스스무 오기가와 (외 3)
Original Assignee
미쓰다 가쓰시게
가부시기 가이샤 히다찌 세이사꾸쇼
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Priority claimed from JP58177944A external-priority patent/JPS6070750A/ja
Priority claimed from JP58177945A external-priority patent/JPS6070751A/ja
Application filed by 미쓰다 가쓰시게, 가부시기 가이샤 히다찌 세이사꾸쇼 filed Critical 미쓰다 가쓰시게
Publication of KR850002668A publication Critical patent/KR850002668A/ko
Application granted granted Critical
Publication of KR920008252B1 publication Critical patent/KR920008252B1/ko

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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004—Wire welding
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    • B23K20/007—Ball bonding
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Abstract

내용 없음

Description

반도체 장치 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 1실시예인 반도체 장치의 단면도, 제2도는 제1도의 반도체 장치의 와이야 본딩부의 확대부분 단면도, 제3도와 제4도는 알미늄 계통 와이야으로의 볼(ball)의 형성 및 초음파 본딩 상태를 도시한 설명도, 제5도는 알미늄 볼의 빅커스(Vickers) 경도와 박리(剝離)발생율 및 본딩 손상 과의관계를 도시한 도면.

Claims (21)

  1. 알미늄과 알미늄 이외의 물질로되는 본딩 와이야는 반도체 페렛상에 형성된 본딩 페드와 상기 반도체페렛 이외에 형성된 도체층을 접속하여서 되는 반도체장치, 상기 본딩 와이야의 상기 본딩 페드에 접속하는 부분은 빅커스 경도가 약 30 내지 50이다.
  2. 특허청구의 범위 제1항에 따르는 반도체장치에 있어서, 상기 본딩 와이야의 상기 본딩 패드에 접속하는 부분은, 볼 본드외에 있다.
  3. 특허청구의 범위 제1항에 따르는 반도체장치에 있어서, 상기 빅커스 경도는 35 내지 42이다.
  4. 특허청구의 범위 제3항에 따르는 반도체장치에 있어서, 상기 본딩 와이야의 상기 본딩 패드에 접속하는 부분은, 볼 본드되어 있다.
  5. 특허청구의 범위 제4항에 따르는 반도체장치에 있어서, 상기 알미늄 이외의 물질은 마그네슘으로 된다.
  6. 특허청구의 범위 제5항에 따르는 반도체장치에 있어서, 상기 마그네슘은 1.5 내지 2중량% 포함된다.
  7. 특허청구의 범위 제4항에 따르는 반도체장치에 있어서, 상기 알미늄 이외의 물질은 실리콘으로 된다.
  8. 특허청구의 범위 제7항에 따르는 반도체장치에 있어서, 상기 실리콘은 약 2중량% 포함된다.
  9. 알미늄과 알미늄 이외의 물질로 되는 본딩 와이야로 반도체 페렛위에 형성된 본딩 페드와 상기 반도체 페렛 이외에 형성된 도체층을 접속할 때에. 상기 본딩 와이야의 상기 본딩 페드 부분을 볼 상태로 하고 이볼을 불활성 가스를 분사에 의해서 냉각하는 반도체 장치의 제조방법.
  10. 특허청구의 범위 제9항에 따르는 반도체장치의 제조방법에 있어서, 상기 냉각에 의해서 상기 볼의 빅커스 경도는 약 30 내지 50으로 된다.
  11. 알미늄과 알미늄 이외의 물질로 되는 본딩 와이야로 반도체 페렛위에 형성된 본딩 페드와 상기 반도체 페렛 이외에 형성된 도체층을 접속하기 전에, 상기 본딩 와이야를 어닐하는 반도체 장치의 제조방법.
  12. 특허청구의 범위 제11항에 따르는 반도체장치의 제조방법에 있어서, 상기 어닐은 상기 본딩 와이야의 재결정 개시온도 보다도 높고, 상기 본딩 와이야의 신장율이 최대로 되는 온도 보다도 낮은 온도에서 행하여 진다.
  13. 특허청구의 범위 제12항에 따르는 반도체장치의 제조방법에 있어서, 상기 알미늄 이외의 물질은 실리콘이다.
  14. 특허청구의 범위 제13항에 따르는 반도체장치의 제조방법에 있어서, 상기 실리콘은 약 1중량% 포함된다. 상기 어닐은 약 400℃ 내지 470℃의 온도에서 행하여진다.
  15. 특허청구의 범위 제12항에 따르는 반도체장치의 제조방법에 있어서, 상기 알미늄 이외의 물질은 마그네슘이다.
  16. 특허청구의 범위 제15항에 따르는 반도체장치의 제조방법에 있어서, 상기 마그네슘은 약 1.5중량 포함된다. 상기 어닐은 약 300℃ 내지 400℃의 온도에서 행하여진다.
  17. 알미늄과 알미늄 이외의 물질로 되는 본딩 와이야는 반도체 페렛상에 형성된 본딩 페드와 상기 반도체 페렛 이외에 형성된 도체층을 접속하여서 되는 반도체 장치의 제조방법은 다음 공정으로 본다. (a) 상기 본딩 와이야를 어닐하는 공정; (b) 상기 본딩 와이야의 상기 본딩 페드에 접속하는 부분을 볼상으로 하고, 이 볼의 빅커스 경도를 약 30 내지 50으로 하는 공정, 그리고 (c) 상기 본딩 와이야말로 상기 본딩 페드와 상기 도체층과를 접속하는 공정.
  18. 특허청구의 범위 제17항에 따르는 반도체장치의 제조방법에 있어서, 상기 빅커스 경도는 35 내지 42로 된다.
  19. 특허청구의 범위 제18항에 따르는 반도체 장치의 제조방법에 있어서, 상기 어닐은 상기 본딩 와이야의 재결정 개시온도 보다도 높고, 상기 본딩 와이야의 신장율이 최대로 되는 온도보다도 낮은 온도에서 행하여진다.
  20. 특허청구의 범위 제19항에 따르는 반도체장치의 제조방법에 있어서, 상기 알미늄이외의 물질은 마그네슘이다.
  21. 특허청구의 범위 제20항에 따르는 반도체장치의 제조방법에 있어서, 상기 마그네슘은 약 1.5중량% 내지 2.9중량% 포함된다. 상기 어닐은 약 300℃ 내지 420℃의 온도에서 행하여 진다.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019840005783A 1983-09-28 1984-09-21 반도체 장치 및 그 제조방법 KR920008252B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP58177944A JPS6070750A (ja) 1983-09-28 1983-09-28 半導体装置
JP58-177944 1983-09-28
JP58-177945 1983-09-28
JP58177945A JPS6070751A (ja) 1983-09-28 1983-09-28 半導体装置
JP83-177945 1983-09-28
JP83-177944 1983-09-28

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KR850002668A true KR850002668A (ko) 1985-05-15
KR920008252B1 KR920008252B1 (ko) 1992-09-25

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DE (1) DE3435489A1 (ko)
FR (1) FR2555813B1 (ko)
GB (1) GB2146937B (ko)
HK (1) HK22389A (ko)
IT (1) IT1176815B (ko)
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US11172915B2 (en) 2019-04-24 2021-11-16 Covidien Lp Specimen retrieval devices with selective bag release

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FR2555813B1 (fr) 1986-06-20
HK22389A (en) 1989-03-24
FR2555813A1 (fr) 1985-05-31
GB2146937A (en) 1985-05-01
IT8422846A0 (it) 1984-09-26
IT8422846A1 (it) 1986-03-26
GB8424394D0 (en) 1984-10-31
SG77288G (en) 1989-03-23
GB2146937B (en) 1987-04-23
KR920008252B1 (ko) 1992-09-25
DE3435489A1 (de) 1985-05-02
IT1176815B (it) 1987-08-18

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