KR850002668A - 반도체 장치 및 그 제조방법 - Google Patents
반도체 장치 및 그 제조방법 Download PDFInfo
- Publication number
- KR850002668A KR850002668A KR1019840005783A KR840005783A KR850002668A KR 850002668 A KR850002668 A KR 850002668A KR 1019840005783 A KR1019840005783 A KR 1019840005783A KR 840005783 A KR840005783 A KR 840005783A KR 850002668 A KR850002668 A KR 850002668A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor device
- aluminum
- manufacturing
- bonding
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 31
- 238000004519 manufacturing process Methods 0.000 title claims 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 14
- 239000000463 material Substances 0.000 claims 9
- 241000282341 Mustela putorius furo Species 0.000 claims 8
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 6
- 238000000137 annealing Methods 0.000 claims 6
- 229910052749 magnesium Inorganic materials 0.000 claims 6
- 239000011777 magnesium Substances 0.000 claims 6
- 239000004020 conductor Substances 0.000 claims 5
- 238000000034 method Methods 0.000 claims 5
- 229910052710 silicon Inorganic materials 0.000 claims 4
- 239000010703 silicon Substances 0.000 claims 4
- 238000001816 cooling Methods 0.000 claims 1
- 239000011261 inert gas Substances 0.000 claims 1
- 206010040844 Skin exfoliation Diseases 0.000 description 1
Classifications
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- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
- B23K20/004—Wire welding
- B23K20/005—Capillary welding
- B23K20/007—Ball bonding
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Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 1실시예인 반도체 장치의 단면도, 제2도는 제1도의 반도체 장치의 와이야 본딩부의 확대부분 단면도, 제3도와 제4도는 알미늄 계통 와이야으로의 볼(ball)의 형성 및 초음파 본딩 상태를 도시한 설명도, 제5도는 알미늄 볼의 빅커스(Vickers) 경도와 박리(剝離)발생율 및 본딩 손상 과의관계를 도시한 도면.
Claims (21)
- 알미늄과 알미늄 이외의 물질로되는 본딩 와이야는 반도체 페렛상에 형성된 본딩 페드와 상기 반도체페렛 이외에 형성된 도체층을 접속하여서 되는 반도체장치, 상기 본딩 와이야의 상기 본딩 페드에 접속하는 부분은 빅커스 경도가 약 30 내지 50이다.
- 특허청구의 범위 제1항에 따르는 반도체장치에 있어서, 상기 본딩 와이야의 상기 본딩 패드에 접속하는 부분은, 볼 본드외에 있다.
- 특허청구의 범위 제1항에 따르는 반도체장치에 있어서, 상기 빅커스 경도는 35 내지 42이다.
- 특허청구의 범위 제3항에 따르는 반도체장치에 있어서, 상기 본딩 와이야의 상기 본딩 패드에 접속하는 부분은, 볼 본드되어 있다.
- 특허청구의 범위 제4항에 따르는 반도체장치에 있어서, 상기 알미늄 이외의 물질은 마그네슘으로 된다.
- 특허청구의 범위 제5항에 따르는 반도체장치에 있어서, 상기 마그네슘은 1.5 내지 2중량% 포함된다.
- 특허청구의 범위 제4항에 따르는 반도체장치에 있어서, 상기 알미늄 이외의 물질은 실리콘으로 된다.
- 특허청구의 범위 제7항에 따르는 반도체장치에 있어서, 상기 실리콘은 약 2중량% 포함된다.
- 알미늄과 알미늄 이외의 물질로 되는 본딩 와이야로 반도체 페렛위에 형성된 본딩 페드와 상기 반도체 페렛 이외에 형성된 도체층을 접속할 때에. 상기 본딩 와이야의 상기 본딩 페드 부분을 볼 상태로 하고 이볼을 불활성 가스를 분사에 의해서 냉각하는 반도체 장치의 제조방법.
- 특허청구의 범위 제9항에 따르는 반도체장치의 제조방법에 있어서, 상기 냉각에 의해서 상기 볼의 빅커스 경도는 약 30 내지 50으로 된다.
- 알미늄과 알미늄 이외의 물질로 되는 본딩 와이야로 반도체 페렛위에 형성된 본딩 페드와 상기 반도체 페렛 이외에 형성된 도체층을 접속하기 전에, 상기 본딩 와이야를 어닐하는 반도체 장치의 제조방법.
- 특허청구의 범위 제11항에 따르는 반도체장치의 제조방법에 있어서, 상기 어닐은 상기 본딩 와이야의 재결정 개시온도 보다도 높고, 상기 본딩 와이야의 신장율이 최대로 되는 온도 보다도 낮은 온도에서 행하여 진다.
- 특허청구의 범위 제12항에 따르는 반도체장치의 제조방법에 있어서, 상기 알미늄 이외의 물질은 실리콘이다.
- 특허청구의 범위 제13항에 따르는 반도체장치의 제조방법에 있어서, 상기 실리콘은 약 1중량% 포함된다. 상기 어닐은 약 400℃ 내지 470℃의 온도에서 행하여진다.
- 특허청구의 범위 제12항에 따르는 반도체장치의 제조방법에 있어서, 상기 알미늄 이외의 물질은 마그네슘이다.
- 특허청구의 범위 제15항에 따르는 반도체장치의 제조방법에 있어서, 상기 마그네슘은 약 1.5중량 포함된다. 상기 어닐은 약 300℃ 내지 400℃의 온도에서 행하여진다.
- 알미늄과 알미늄 이외의 물질로 되는 본딩 와이야는 반도체 페렛상에 형성된 본딩 페드와 상기 반도체 페렛 이외에 형성된 도체층을 접속하여서 되는 반도체 장치의 제조방법은 다음 공정으로 본다. (a) 상기 본딩 와이야를 어닐하는 공정; (b) 상기 본딩 와이야의 상기 본딩 페드에 접속하는 부분을 볼상으로 하고, 이 볼의 빅커스 경도를 약 30 내지 50으로 하는 공정, 그리고 (c) 상기 본딩 와이야말로 상기 본딩 페드와 상기 도체층과를 접속하는 공정.
- 특허청구의 범위 제17항에 따르는 반도체장치의 제조방법에 있어서, 상기 빅커스 경도는 35 내지 42로 된다.
- 특허청구의 범위 제18항에 따르는 반도체 장치의 제조방법에 있어서, 상기 어닐은 상기 본딩 와이야의 재결정 개시온도 보다도 높고, 상기 본딩 와이야의 신장율이 최대로 되는 온도보다도 낮은 온도에서 행하여진다.
- 특허청구의 범위 제19항에 따르는 반도체장치의 제조방법에 있어서, 상기 알미늄이외의 물질은 마그네슘이다.
- 특허청구의 범위 제20항에 따르는 반도체장치의 제조방법에 있어서, 상기 마그네슘은 약 1.5중량% 내지 2.9중량% 포함된다. 상기 어닐은 약 300℃ 내지 420℃의 온도에서 행하여 진다.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58177944A JPS6070750A (ja) | 1983-09-28 | 1983-09-28 | 半導体装置 |
JP58-177944 | 1983-09-28 | ||
JP58-177945 | 1983-09-28 | ||
JP58177945A JPS6070751A (ja) | 1983-09-28 | 1983-09-28 | 半導体装置 |
JP83-177945 | 1983-09-28 | ||
JP83-177944 | 1983-09-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR850002668A true KR850002668A (ko) | 1985-05-15 |
KR920008252B1 KR920008252B1 (ko) | 1992-09-25 |
Family
ID=26498290
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019840005783A KR920008252B1 (ko) | 1983-09-28 | 1984-09-21 | 반도체 장치 및 그 제조방법 |
Country Status (7)
Country | Link |
---|---|
KR (1) | KR920008252B1 (ko) |
DE (1) | DE3435489A1 (ko) |
FR (1) | FR2555813B1 (ko) |
GB (1) | GB2146937B (ko) |
HK (1) | HK22389A (ko) |
IT (1) | IT1176815B (ko) |
SG (1) | SG77288G (ko) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1183375B (it) * | 1984-02-24 | 1987-10-22 | Hitachi Ltd | Dispositivo a semiconduttori comprendente una pallina, fili conduttori e porzioni conduttrici esterneche sono collegate alla pallina mediante tali fili conduttori |
JPS60223149A (ja) * | 1984-04-19 | 1985-11-07 | Hitachi Ltd | 半導体装置 |
US4705204A (en) * | 1985-03-01 | 1987-11-10 | Mitsubishi Denki Kabushiki Kaisha | Method of ball forming for wire bonding |
US4976393A (en) * | 1986-12-26 | 1990-12-11 | Hitachi, Ltd. | Semiconductor device and production process thereof, as well as wire bonding device used therefor |
DK0383091T3 (da) * | 1989-02-13 | 1994-02-07 | Bayer Agrochem Kk | Insecticidt virksomme nitroforbindelser |
US5437405A (en) * | 1994-08-22 | 1995-08-01 | National Semiconductor Corporation | Method and apparatus for stitch bonding of wires to integrated circuit bonding pads |
DE102007025658B4 (de) * | 2007-06-01 | 2009-04-09 | Infineon Technologies Ag | Bonddrahtanordnung und Verfahren zur Herstellung einer Bonddrahtanordnung |
US11172915B2 (en) | 2019-04-24 | 2021-11-16 | Covidien Lp | Specimen retrieval devices with selective bag release |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AT201117B (de) * | 1956-10-31 | 1958-12-10 | Western Electric Co | Verfahren zur Verbindung eines metallischen Leiters mit einem Halbleiterkörper |
BE559732A (ko) * | 1956-10-31 | 1900-01-01 | ||
GB1106163A (en) * | 1964-03-02 | 1968-03-13 | Post Office | Improvements in or relating to the bonding of metals to semiconductor, metallic or non-metallic surfaces |
NL7406783A (nl) * | 1974-05-21 | 1975-11-25 | Philips Nv | Werkwijze voor het aanbrengen van een draad- verbinding aan een halfgeleiderinrichting. |
GB1536872A (en) * | 1975-05-15 | 1978-12-20 | Welding Inst | Electrical inter-connection method and apparatus |
DE2929623C2 (de) * | 1979-07-21 | 1981-11-26 | W.C. Heraeus Gmbh, 6450 Hanau | Feinstdraht aus einer Aluminiumlegierung |
DE3023528C2 (de) * | 1980-06-24 | 1984-11-29 | W.C. Heraeus Gmbh, 6450 Hanau | Aluminium enthaltender Feinstdraht |
JPS5712531A (en) * | 1980-06-26 | 1982-01-22 | Fujitsu Ltd | Wire bonding method |
NL8005922A (nl) * | 1980-10-29 | 1982-05-17 | Philips Nv | Werkwijze voor het vormen van een draadverbinding. |
NL184184C (nl) * | 1981-03-20 | 1989-05-01 | Philips Nv | Werkwijze voor het aanbrengen van kontaktverhogingen op kontaktplaatsen van een electronische microketen. |
US4390771A (en) * | 1981-05-11 | 1983-06-28 | Fairchild Camera & Instrument Corp. | Bonding wire ball forming method and apparatus |
US4387283A (en) * | 1981-08-03 | 1983-06-07 | Texas Instruments Incorporated | Apparatus and method of forming aluminum balls for ball bonding |
DD200954A1 (de) * | 1981-10-20 | 1983-06-22 | Wolfgang Werner | Mikrodraht aus aluminium fuer das drahtbonden |
JPS58154241A (ja) * | 1982-03-10 | 1983-09-13 | Hitachi Ltd | 半導体装置及びその製法 |
-
1984
- 1984-08-17 FR FR8412906A patent/FR2555813B1/fr not_active Expired
- 1984-09-21 KR KR1019840005783A patent/KR920008252B1/ko not_active IP Right Cessation
- 1984-09-26 IT IT22846/84A patent/IT1176815B/it active
- 1984-09-27 GB GB08424394A patent/GB2146937B/en not_active Expired
- 1984-09-27 DE DE19843435489 patent/DE3435489A1/de not_active Withdrawn
-
1988
- 1988-11-18 SG SG772/88A patent/SG77288G/en unknown
-
1989
- 1989-03-16 HK HK223/89A patent/HK22389A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
FR2555813B1 (fr) | 1986-06-20 |
HK22389A (en) | 1989-03-24 |
FR2555813A1 (fr) | 1985-05-31 |
GB2146937A (en) | 1985-05-01 |
IT8422846A0 (it) | 1984-09-26 |
IT8422846A1 (it) | 1986-03-26 |
GB8424394D0 (en) | 1984-10-31 |
SG77288G (en) | 1989-03-23 |
GB2146937B (en) | 1987-04-23 |
KR920008252B1 (ko) | 1992-09-25 |
DE3435489A1 (de) | 1985-05-02 |
IT1176815B (it) | 1987-08-18 |
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