KR20230060444A - 페놀성 수산기 함유 수지 - Google Patents

페놀성 수산기 함유 수지 Download PDF

Info

Publication number
KR20230060444A
KR20230060444A KR1020220088066A KR20220088066A KR20230060444A KR 20230060444 A KR20230060444 A KR 20230060444A KR 1020220088066 A KR1020220088066 A KR 1020220088066A KR 20220088066 A KR20220088066 A KR 20220088066A KR 20230060444 A KR20230060444 A KR 20230060444A
Authority
KR
South Korea
Prior art keywords
group
phenolic hydroxyl
structural unit
hydroxyl group
compound
Prior art date
Application number
KR1020220088066A
Other languages
English (en)
Korean (ko)
Inventor
히로히토 나가타
다케시 이베
Original Assignee
디아이씨 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 디아이씨 가부시끼가이샤 filed Critical 디아이씨 가부시끼가이샤
Publication of KR20230060444A publication Critical patent/KR20230060444A/ko

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/04Condensation polymers of aldehydes or ketones with phenols only of aldehydes
    • C08G8/08Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ
    • C08G8/18Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ with phenols substituted by carboxylic or sulfonic acid groups
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/30Imagewise removal using liquid means
    • G03F7/32Liquid compositions therefor, e.g. developers
    • G03F7/322Aqueous alkaline compositions

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
KR1020220088066A 2021-10-27 2022-07-18 페놀성 수산기 함유 수지 KR20230060444A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2021-175389 2021-10-27
JP2021175389 2021-10-27

Publications (1)

Publication Number Publication Date
KR20230060444A true KR20230060444A (ko) 2023-05-04

Family

ID=86078434

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020220088066A KR20230060444A (ko) 2021-10-27 2022-07-18 페놀성 수산기 함유 수지

Country Status (4)

Country Link
JP (1) JP2023065292A (zh)
KR (1) KR20230060444A (zh)
CN (1) CN116023607A (zh)
TW (1) TW202330684A (zh)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001114853A (ja) 1999-10-21 2001-04-24 Nippon Shokubai Co Ltd カルボキシル基を有するノボラック型フェノール樹脂および該フェノール樹脂を用いたポジ型感光性樹脂組成物
JP2008112134A (ja) 2006-10-06 2008-05-15 Hitachi Chem Co Ltd 電極パターンの形成方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001114853A (ja) 1999-10-21 2001-04-24 Nippon Shokubai Co Ltd カルボキシル基を有するノボラック型フェノール樹脂および該フェノール樹脂を用いたポジ型感光性樹脂組成物
JP2008112134A (ja) 2006-10-06 2008-05-15 Hitachi Chem Co Ltd 電極パターンの形成方法

Also Published As

Publication number Publication date
JP2023065292A (ja) 2023-05-12
CN116023607A (zh) 2023-04-28
TW202330684A (zh) 2023-08-01

Similar Documents

Publication Publication Date Title
JP5988122B1 (ja) ナフトール型カリックスアレーン化合物及びその製造方法、感光性組成物、レジスト材料、並びに塗膜
TWI711655B (zh) 含酚性羥基之樹脂及抗蝕劑膜
JPWO2015190233A1 (ja) 永久膜用感光性組成物、レジスト材料、塗膜、及び永久膜用感光性組成物の製造方法
JP6025011B1 (ja) フェノール性水酸基含有化合物、これを含む組成物及びその硬化膜
JP6940834B2 (ja) フェノール性水酸基含有樹脂、感光性組成物、レジスト膜、硬化性組成物及び硬化物
JP2010085567A (ja) フォトレジスト用樹脂組成物
CN107848926B (zh) 酚醛清漆型含酚性羟基树脂以及抗蚀膜
JP5939450B1 (ja) フェノール性水酸基含有樹脂、その製造方法、感光性組成物、レジスト材料、塗膜、硬化性組成物とその硬化物、及びレジスト下層膜
JP2018083786A (ja) フェノール性水酸基含有化合物及びレジスト材料
TWI722135B (zh) 酚醛清漆型樹脂及抗蝕劑材料
KR20230060444A (ko) 페놀성 수산기 함유 수지
JP2009075436A (ja) フォトレジスト用樹脂組成物
KR20240112191A (ko) 페놀성 수산기 함유 수지, 감광성 수지 조성물, 경화성 조성물 및 레지스트막
JP7380951B2 (ja) フェノール性水酸基含有樹脂
JP7318820B2 (ja) レジストパターンの製造方法、及びレジストパターン、並びに透明積層部材製造用ポジ型感光性樹脂組成物
JP6590085B2 (ja) フェノール性水酸基含有樹脂及びレジスト材料
JP6590084B2 (ja) フェノール性水酸基含有樹脂及びレジスト材料
CN118325004A (zh) 含酚性羟基树脂、感光性树脂组合物、固化性组合物和抗蚀膜
KR20120007124A (ko) 포지티브 포토레지스트 조성물
JP2020055955A (ja) ノボラック型フェノール樹脂、感光性樹脂組成物およびノボラック型フェノール樹脂の製造方法