KR20190118518A - 피가공물의 절삭 방법 - Google Patents

피가공물의 절삭 방법 Download PDF

Info

Publication number: KR20190118518A
Authority: KR; South Korea
Prior art keywords: cutting; workpiece; touch film; cutting blade; diamond touch
Prior art date: 2018-04-10

Application number

KR1020190039594A

Other languages

English (en)

Korean (ko)

Other versions

KR102680920B1 (ko

Inventor

다이고 노리즈미

마코토 마스나가

Original Assignee

가부시기가이샤 디스코

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2018-04-10

Filing date

2019-04-04

Publication date

2019-10-18

2019-04-04 Application filed by 가부시기가이샤 디스코 filed Critical 가부시기가이샤 디스코

2019-10-18 Publication of KR20190118518A publication Critical patent/KR20190118518A/ko

2024-07-02 Application granted granted Critical

2024-07-02 Publication of KR102680920B1 publication Critical patent/KR102680920B1/ko

Links

238000005520 cutting process Methods 0.000 title claims abstract description 201
238000000034 method Methods 0.000 title claims abstract description 23
229910003460 diamond Inorganic materials 0.000 claims abstract description 82
239000010432 diamond Substances 0.000 claims abstract description 82
230000002093 peripheral effect Effects 0.000 claims abstract description 4
238000003754 machining Methods 0.000 abstract description 8
239000000758 substrate Substances 0.000 description 12
238000004519 manufacturing process Methods 0.000 description 10
230000007547 defect Effects 0.000 description 8
238000005336 cracking Methods 0.000 description 4
239000011521 glass Substances 0.000 description 3
238000010438 heat treatment Methods 0.000 description 3
239000011347 resin Substances 0.000 description 3
229920005989 resin Polymers 0.000 description 3
239000004065 semiconductor Substances 0.000 description 3
PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
230000003028 elevating effect Effects 0.000 description 2
239000000463 material Substances 0.000 description 2
239000004925 Acrylic resin Substances 0.000 description 1
229920000178 Acrylic resin Polymers 0.000 description 1
229910001218 Gallium arsenide Inorganic materials 0.000 description 1
JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
239000006061 abrasive grain Substances 0.000 description 1
NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
239000012790 adhesive layer Substances 0.000 description 1
239000000919 ceramic Substances 0.000 description 1
238000010291 electrical method Methods 0.000 description 1
239000003822 epoxy resin Substances 0.000 description 1
-1 etc.) Substances 0.000 description 1
LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
239000010410 layer Substances 0.000 description 1
238000010297 mechanical methods and process Methods 0.000 description 1
239000002184 metal Substances 0.000 description 1
229910052751 metal Inorganic materials 0.000 description 1
229910052759 nickel Inorganic materials 0.000 description 1
238000007747 plating Methods 0.000 description 1
229920000647 polyepoxide Polymers 0.000 description 1
229920000098 polyolefin Polymers 0.000 description 1
238000003672 processing method Methods 0.000 description 1
229910052594 sapphire Inorganic materials 0.000 description 1
239000010980 sapphire Substances 0.000 description 1
230000011218 segmentation Effects 0.000 description 1
229910052710 silicon Inorganic materials 0.000 description 1
239000010703 silicon Substances 0.000 description 1
230000001629 suppression Effects 0.000 description 1

Images

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

Landscapes

Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Dicing (AREA)
Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Processing Of Stones Or Stones Resemblance Materials (AREA)
Turning (AREA)

KR1020190039594A 2018-04-10 2019-04-04 피가공물의 절삭 방법 KR102680920B1 (ko)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2018075171A JP7019254B2 (ja)	2018-04-10	2018-04-10	被加工物の切削方法
JPJP-P-2018-075171		2018-04-10

Publications (2)

Publication Number	Publication Date
KR20190118518A true KR20190118518A (ko)	2019-10-18
KR102680920B1 KR102680920B1 (ko)	2024-07-02

Family

ID=68215558

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
KR1020190039594A KR102680920B1 (ko)	2018-04-10	2019-04-04	피가공물의 절삭 방법

Country Status (4)

Country	Link
JP (1)	JP7019254B2 (ja)
KR (1)	KR102680920B1 (ja)
CN (1)	CN110364458B (ja)
TW (1)	TWI781313B (ja)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2004079597A (ja)	2002-08-12	2004-03-11	Disco Abrasive Syst Ltd	半導体チップの加工方法
JP2005223130A (ja) *	2004-02-05	2005-08-18	Disco Abrasive Syst Ltd	半導体ウエーハの分割方法
JP2006059914A (ja) *	2004-08-18	2006-03-02	Matsushita Electric Ind Co Ltd	半導体装置の製造方法及び半導体装置
JP2009071100A (ja) *	2007-09-14	2009-04-02	Disco Abrasive Syst Ltd	デバイスの製造方法
US20120313231A1 (en) *	2011-06-09	2012-12-13	National Semiconductor Corporation	Method and apparatus for dicing die attach film on a semiconductor wafer
KR20150084645A (ko) *	2014-01-14	2015-07-22	가부시기가이샤 디스코	절삭 방법
KR20160033631A (ko) *	2014-09-18	2016-03-28	가부시기가이샤 디스코	웨이퍼의 가공 방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN101647096B (zh) *	2007-04-05	2012-01-04	日立化成工业株式会社	半导体芯片的制造方法和半导体用粘接膜及其复合片
JP2010123823A (ja) *	2008-11-21	2010-06-03	Disco Abrasive Syst Ltd	切削装置
JP2011222847A (ja) *	2010-04-13	2011-11-04	Toppan Printing Co Ltd	Ｉｃチップ及びその製造方法
JP2013069814A (ja) *	2011-09-21	2013-04-18	Renesas Electronics Corp	半導体装置の製造方法
JP6305867B2 (ja) *	2014-08-11	2018-04-04	株式会社ディスコ	ウエーハの加工方法
JP6559477B2 (ja) *	2015-06-23	2019-08-14	株式会社ディスコ	ウェーハの加工方法
US10535554B2 (en) *	2016-12-14	2020-01-14	Taiwan Semiconductor Manufacturing Co., Ltd.	Semiconductor die having edge with multiple gradients and method for forming the same

2018
- 2018-04-10 JP JP2018075171A patent/JP7019254B2/ja active Active
2019
- 2019-04-03 CN CN201910266254.0A patent/CN110364458B/zh active Active
- 2019-04-04 KR KR1020190039594A patent/KR102680920B1/ko active IP Right Grant
- 2019-04-08 TW TW108112122A patent/TWI781313B/zh active

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2004079597A (ja)	2002-08-12	2004-03-11	Disco Abrasive Syst Ltd	半導体チップの加工方法
JP2005223130A (ja) *	2004-02-05	2005-08-18	Disco Abrasive Syst Ltd	半導体ウエーハの分割方法
JP2006059914A (ja) *	2004-08-18	2006-03-02	Matsushita Electric Ind Co Ltd	半導体装置の製造方法及び半導体装置
JP2009071100A (ja) *	2007-09-14	2009-04-02	Disco Abrasive Syst Ltd	デバイスの製造方法
US20120313231A1 (en) *	2011-06-09	2012-12-13	National Semiconductor Corporation	Method and apparatus for dicing die attach film on a semiconductor wafer
KR20150084645A (ko) *	2014-01-14	2015-07-22	가부시기가이샤 디스코	절삭 방법
KR20160033631A (ko) *	2014-09-18	2016-03-28	가부시기가이샤 디스코	웨이퍼의 가공 방법

Also Published As

Publication number	Publication date
JP2019181621A (ja)	2019-10-24
KR102680920B1 (ko)	2024-07-02
TWI781313B (zh)	2022-10-21
CN110364458A (zh)	2019-10-22
JP7019254B2 (ja)	2022-02-15
TW201944499A (zh)	2019-11-16
CN110364458B (zh)	2023-08-18

Legal Events

Date	Code	Title
2022-01-04	A201	Request for examination
2023-11-27	E902	Notification of reason for refusal
2024-03-29	E701	Decision to grant or registration of patent right

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