JP2019181621A - 被加工物の切削方法 - Google Patents
被加工物の切削方法 Download PDFInfo
- Publication number
- JP2019181621A JP2019181621A JP2018075171A JP2018075171A JP2019181621A JP 2019181621 A JP2019181621 A JP 2019181621A JP 2018075171 A JP2018075171 A JP 2018075171A JP 2018075171 A JP2018075171 A JP 2018075171A JP 2019181621 A JP2019181621 A JP 2019181621A
- Authority
- JP
- Japan
- Prior art keywords
- cutting
- workpiece
- die attach
- attach film
- cutting blade
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000005520 cutting process Methods 0.000 title claims abstract description 214
- 238000000034 method Methods 0.000 title claims abstract description 19
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 241000276425 Xiphophorus maculatus Species 0.000 abstract 1
- 230000000452 restraining effect Effects 0.000 abstract 1
- 238000003754 machining Methods 0.000 description 13
- 239000000758 substrate Substances 0.000 description 12
- 230000007547 defect Effects 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000011521 glass Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000010291 electrical method Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- -1 etc.) Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Turning (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Abstract
Description
13 被加工物
13a 表面
13b 裏面
15 分割予定ライン
17 デバイス
19 環状フレーム
21 積層テープ
23 ダイアタッチフィルム
25 ダイシングテープ
27 切削溝
2 切削装置
4 チャックテーブル
4a 保持面
6 切削ユニット
8 クランプ
10 スピンドル
12 切削ブレード
Claims (2)
- 格子状に形成された複数の分割予定ラインによって区画された表面側の領域にそれぞれデバイスが形成された板状の被加工物を切削ブレードで切削する被加工物の切削方法であって、
ダイアタッチフィルムとダイシングテープとが積層された積層テープの該ダイアタッチフィルムを該被加工物の裏面に貼着するとともに、該ダイシングテープの外周部を環状フレームに貼着し、フレームユニットを形成するフレームユニット形成ステップと、
該被加工物を、該積層テープを介して切削装置のチャックテーブルで保持する保持ステップと、
該チャックテーブルと該切削ブレードとを、回転する該切削ブレードの下端が移動する方向と該チャックテーブルの移動方向とが一致するように相対的に移動させ、該切削ブレードを該被加工物に切り込ませることにより、該ダイアタッチフィルムを残して該被加工物を切断する切削溝を該分割予定ラインに沿って形成する第1切削ステップと、
該第1切削ステップを実施した後、該チャックテーブルと該切削ブレードとを、回転する該切削ブレードの下端が移動する方向と該チャックテーブルの移動方向とが逆方向になるように相対的に移動させ、該切削溝の底で露出した該ダイアタッチフィルムを該切削ブレードで切断する第2切削ステップと、を備えることを特徴とする被加工物の切削方法。 - 該第1切削ステップで、該切削ブレードが該ダイアタッチフィルムに切り込む深さは5μm以下であることを特徴とする請求項1記載の被加工物の切削方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018075171A JP7019254B2 (ja) | 2018-04-10 | 2018-04-10 | 被加工物の切削方法 |
CN201910266254.0A CN110364458B (zh) | 2018-04-10 | 2019-04-03 | 被加工物的切削方法 |
KR1020190039594A KR20190118518A (ko) | 2018-04-10 | 2019-04-04 | 피가공물의 절삭 방법 |
TW108112122A TWI781313B (zh) | 2018-04-10 | 2019-04-08 | 被加工物的切割方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018075171A JP7019254B2 (ja) | 2018-04-10 | 2018-04-10 | 被加工物の切削方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019181621A true JP2019181621A (ja) | 2019-10-24 |
JP7019254B2 JP7019254B2 (ja) | 2022-02-15 |
Family
ID=68215558
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018075171A Active JP7019254B2 (ja) | 2018-04-10 | 2018-04-10 | 被加工物の切削方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP7019254B2 (ja) |
KR (1) | KR20190118518A (ja) |
CN (1) | CN110364458B (ja) |
TW (1) | TWI781313B (ja) |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005223130A (ja) * | 2004-02-05 | 2005-08-18 | Disco Abrasive Syst Ltd | 半導体ウエーハの分割方法 |
JP2006059914A (ja) * | 2004-08-18 | 2006-03-02 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法及び半導体装置 |
JP2009071100A (ja) * | 2007-09-14 | 2009-04-02 | Disco Abrasive Syst Ltd | デバイスの製造方法 |
JP2010123823A (ja) * | 2008-11-21 | 2010-06-03 | Disco Abrasive Syst Ltd | 切削装置 |
JP2011222847A (ja) * | 2010-04-13 | 2011-11-04 | Toppan Printing Co Ltd | Icチップ及びその製造方法 |
US20120313231A1 (en) * | 2011-06-09 | 2012-12-13 | National Semiconductor Corporation | Method and apparatus for dicing die attach film on a semiconductor wafer |
US20180166328A1 (en) * | 2016-12-14 | 2018-06-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor die having edge with multiple gradients and method for forming the same |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004079597A (ja) | 2002-08-12 | 2004-03-11 | Disco Abrasive Syst Ltd | 半導体チップの加工方法 |
US8232185B2 (en) * | 2007-04-05 | 2012-07-31 | Hitachi Chemical Company, Ltd. | Method for manufacturing semiconductor chip, adhesive film for semiconductor, and composite sheet using the film |
JP2013069814A (ja) * | 2011-09-21 | 2013-04-18 | Renesas Electronics Corp | 半導体装置の製造方法 |
JP6305867B2 (ja) * | 2014-08-11 | 2018-04-04 | 株式会社ディスコ | ウエーハの加工方法 |
JP2016063060A (ja) * | 2014-09-18 | 2016-04-25 | 株式会社ディスコ | ウエーハの加工方法 |
JP6559477B2 (ja) * | 2015-06-23 | 2019-08-14 | 株式会社ディスコ | ウェーハの加工方法 |
-
2018
- 2018-04-10 JP JP2018075171A patent/JP7019254B2/ja active Active
-
2019
- 2019-04-03 CN CN201910266254.0A patent/CN110364458B/zh active Active
- 2019-04-04 KR KR1020190039594A patent/KR20190118518A/ko active IP Right Grant
- 2019-04-08 TW TW108112122A patent/TWI781313B/zh active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005223130A (ja) * | 2004-02-05 | 2005-08-18 | Disco Abrasive Syst Ltd | 半導体ウエーハの分割方法 |
JP2006059914A (ja) * | 2004-08-18 | 2006-03-02 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法及び半導体装置 |
JP2009071100A (ja) * | 2007-09-14 | 2009-04-02 | Disco Abrasive Syst Ltd | デバイスの製造方法 |
JP2010123823A (ja) * | 2008-11-21 | 2010-06-03 | Disco Abrasive Syst Ltd | 切削装置 |
JP2011222847A (ja) * | 2010-04-13 | 2011-11-04 | Toppan Printing Co Ltd | Icチップ及びその製造方法 |
US20120313231A1 (en) * | 2011-06-09 | 2012-12-13 | National Semiconductor Corporation | Method and apparatus for dicing die attach film on a semiconductor wafer |
US20180166328A1 (en) * | 2016-12-14 | 2018-06-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor die having edge with multiple gradients and method for forming the same |
Also Published As
Publication number | Publication date |
---|---|
CN110364458B (zh) | 2023-08-18 |
CN110364458A (zh) | 2019-10-22 |
KR20190118518A (ko) | 2019-10-18 |
JP7019254B2 (ja) | 2022-02-15 |
TWI781313B (zh) | 2022-10-21 |
TW201944499A (zh) | 2019-11-16 |
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