KR20150077337A - 연마 종점 검출 방법 및 연마 종점 검출 장치 - Google Patents

연마 종점 검출 방법 및 연마 종점 검출 장치 Download PDF

Info

Publication number
KR20150077337A
KR20150077337A KR1020140186984A KR20140186984A KR20150077337A KR 20150077337 A KR20150077337 A KR 20150077337A KR 1020140186984 A KR1020140186984 A KR 1020140186984A KR 20140186984 A KR20140186984 A KR 20140186984A KR 20150077337 A KR20150077337 A KR 20150077337A
Authority
KR
South Korea
Prior art keywords
end point
polishing
polished
polishing end
light
Prior art date
Application number
KR1020140186984A
Other languages
English (en)
Korean (ko)
Inventor
반 이토
나오시 사쿠마
아키히로 가지타
다다시 사카이
Original Assignee
가부시키가이샤 에바라 세이사꾸쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 에바라 세이사꾸쇼 filed Critical 가부시키가이샤 에바라 세이사꾸쇼
Publication of KR20150077337A publication Critical patent/KR20150077337A/ko

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53276—Conductive materials containing carbon, e.g. fullerenes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
    • H01L2221/1068—Formation and after-treatment of conductors
    • H01L2221/1094—Conducting structures comprising nanotubes or nanowires

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
KR1020140186984A 2013-12-27 2014-12-23 연마 종점 검출 방법 및 연마 종점 검출 장치 KR20150077337A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2013-271413 2013-12-27
JP2013271413A JP2015126179A (ja) 2013-12-27 2013-12-27 研磨終点検出方法、及び研磨終点検出装置

Publications (1)

Publication Number Publication Date
KR20150077337A true KR20150077337A (ko) 2015-07-07

Family

ID=53480740

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020140186984A KR20150077337A (ko) 2013-12-27 2014-12-23 연마 종점 검출 방법 및 연마 종점 검출 장치

Country Status (4)

Country Link
US (1) US20150183084A1 (ja)
JP (1) JP2015126179A (ja)
KR (1) KR20150077337A (ja)
TW (1) TW201524674A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190121239A (ko) * 2018-04-17 2019-10-25 스피드팸 가부시키가이샤 연마 장치

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7469032B2 (ja) 2019-12-10 2024-04-16 株式会社荏原製作所 研磨方法および研磨装置
JP2023148801A (ja) * 2022-03-30 2023-10-13 株式会社東京精密 研磨終点検出装置及びｃｍｐ装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6190234B1 (en) * 1999-01-25 2001-02-20 Applied Materials, Inc. Endpoint detection with light beams of different wavelengths
JP3327289B2 (ja) * 2000-03-29 2002-09-24 株式会社ニコン 工程終了点測定装置及び測定方法及び研磨装置及び半導体デバイス製造方法及び信号処理プログラムを記録した記録媒体
US7101257B2 (en) * 2003-05-21 2006-09-05 Ebara Corporation Substrate polishing apparatus
JP4464642B2 (ja) * 2003-09-10 2010-05-19 株式会社荏原製作所 研磨状態監視装置、研磨状態監視方法、研磨装置及び研磨方法
US8260446B2 (en) * 2005-08-22 2012-09-04 Applied Materials, Inc. Spectrographic monitoring of a substrate during processing using index values
JP2009070911A (ja) * 2007-09-11 2009-04-02 Fujitsu Ltd 配線構造体、半導体装置および配線構造体の製造方法
JP2009129970A (ja) * 2007-11-20 2009-06-11 Ebara Corp 研磨装置及び研磨方法
JP2010135631A (ja) * 2008-12-05 2010-06-17 Fujitsu Microelectronics Ltd 配線構造及びその形成方法、並びに半導体装置
CN102884613B (zh) * 2010-05-05 2016-08-31 应用材料公司 用于终点检测的动态或适应性追踪光谱特征
JP5468496B2 (ja) * 2010-08-25 2014-04-09 株式会社東芝 半導体基板の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190121239A (ko) * 2018-04-17 2019-10-25 스피드팸 가부시키가이샤 연마 장치

Also Published As

Publication number Publication date
US20150183084A1 (en) 2015-07-02
JP2015126179A (ja) 2015-07-06
TW201524674A (zh) 2015-07-01

Similar Documents

Publication Publication Date Title
TWI466756B (zh) 使用傅立葉轉換測量膜厚度
TWI648780B (zh) 用於高靈敏性之渦電流（rtpc）感測器的中間導電率應用
KR100899717B1 (ko) 광학적 및 맴돌이전류 모니터링을 하는 통합식 종단점탐지시스템
KR102346061B1 (ko) 전도성 트렌치 깊이의 유도성 모니터링을 위한 기판 피처들
KR20150077337A (ko) 연마 종점 검출 방법 및 연마 종점 검출 장치
US6925348B2 (en) Methods for detecting transitions of wafer surface properties in chemical mechanical polishing for process status and control
TWI589394B (zh) 化學機械研磨基板的方法及研磨系統
TW201018544A (en) Polishing method and apparatus
JP2007263981A (ja) 渦電流センサ
TW201223702A (en) Techniques for matching measured spectra to reference spectra for in-situ optical monitoring
TW200801448A (en) Polishing apparatus and polishing method
KR102368644B1 (ko) 엔드포인트 검출을 위한 연속적인 피처 트래킹
JP2019529136A (ja) トレンチの深さの電磁誘導モニタリングに基づく過研磨
TW201249592A (en) Eddy current monitoring of metal residue or metal pillars
TW201139053A (en) High sensitivity real time profile control eddy current monitoring system
TW201206630A (en) Endpoint control during chemical mechanical polishing by detecting interface between different layers through selectivity change
TW201027611A (en) Endpoint control of multiple-wafer chemical mechanical polishing
TWI223366B (en) Method of judging residual film by optical measurement
JP5219395B2 (ja) ウェハ研磨モニタ方法とその装置
CN109791881B (zh) 具有补偿滤波的端点检测
US20160013085A1 (en) In-Situ Acoustic Monitoring of Chemical Mechanical Polishing
TWI806898B (zh) 用於晶圓上準確的感測器位置判定的振動校正
JP2001071261A (ja) 超平坦化・高精度制御研磨装置および超平坦化・高精度制御研磨方法
US20220281058A1 (en) Active acoustic monitoring for chemical mechanical polishing

Legal Events

Date Code Title Description
WITN Withdrawal due to no request for examination