KR20130092857A - Metho for forming patter used by laser etching - Google Patents
Metho for forming patter used by laser etching Download PDFInfo
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- KR20130092857A KR20130092857A KR1020120014419A KR20120014419A KR20130092857A KR 20130092857 A KR20130092857 A KR 20130092857A KR 1020120014419 A KR1020120014419 A KR 1020120014419A KR 20120014419 A KR20120014419 A KR 20120014419A KR 20130092857 A KR20130092857 A KR 20130092857A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0275—Photolithographic processes using lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Abstract
Description
The present invention relates to a method of manufacturing a conductive fine patterned electrode using a laser, and more particularly, to a method of manufacturing a conductive fine patterned electrode using a laser, in which metal nanowires are uniformly arranged to form a conductive layer having low resistance, The electrode film is protected. Using this technique of forming a conductive fine pattern electrode by changing the laser power, it is possible to solve the problem of high visibility of the transparent electrode, and it is possible to realize excellent pattern resolution and fine line width.
Electronic devices such as displays or transistors in general require a fine pattern of metal foil for electrodes or metallization lines in common. The fine patterns of these metal thin films are usually formed through vacuum vapor deposition of a thin film and a photolithography process. After a conductive material is deposited on a substrate, a dry film or a photosensitive liquid is coated on the surface of the conductive material to form a fine pattern circuit, and then cured by irradiating ultraviolet rays (UV), and then developed using a developer , And then forming a fine pattern to be implemented using a chemical etching solution. Although the photolithography process is capable of high resolution patterning, it has the disadvantage of discharging excess chemical waste due to the repetition of expensive equipment, complicated production process, and etching process. In recent years, along with the advent of flexible electronic devices, the importance of a patterning process capable of large area at low temperatures has been raised, and a lot of research and development has been carried out to find alternatives to existing photolithography processes represented by high cost and high temperature processes have. Examples include inkjet printing, gravure offset printing, reverse offset, and nanoimprinting. Such schemes have the advantage of direct patterning and some technological advances, but they still can not replace the photolithography process due to the resolution, reliability, and limitations of the production process speed.
In order to solve the above-described problems, researches have been made to form a fine pattern directly using a laser. A study using lasers for thin film pattern printing was first presented by J. Bohanddy et al. We reported that a Cu thin film was deposited on a silicon substrate and irradiated with an excimer pulse laser (wavelength: 195 nm) to form a line pattern with a line width of several tens of micrometers on the silicon substrate. In addition, several techniques for forming fine patterns using a laser have been disclosed. Korean Patent No. 10-299185 discloses an apparatus and method for forming a conductive pattern on an insulator substrate using a laser beam, and Korean Patent Registration No. 10-0833017 discloses a high-resolution pattern forming method using a direct pattern method have. In addition, U.S. Patent Application Publication No. 20060057502 discloses a method of coating a substrate with a metal dispersion liquid comprising metal fine particles having a particle diameter of 0.5 nm to 200 nm, a dispersant and a solvent, and partially irradiating a laser beam having a wavelength of 300 nm to 550 nm to sinter the metal fine particles A method of forming a conductive circuit by laser curing is described in which a substrate is washed to remove a metal dispersion in a portion not irradiated with a laser to form a conductive circuit in a form irradiated with a laser beam. Also, Korean Patent Registration No. 2003-0004534 (patent of which the wavelength of the laser beam is 200 nm to 400 nm, preferably using the laser added with the laser Neodymium (Nd 3+ ) ion), the shorter the wavelength of the laser beam, MPB (Multi Photon Absorption) increases the intensity of laser light compared to long wavelength laser, which is more effective in etching ITO film. MPB is the number of photons constituting a laser beam increases as energy increases. And 10-2009-0015410 (a patent for a dynamic focusing racer etch system for processing transparent electrodes for touch panels, a laser beam in an ultraviolet wavelength region of 400 nm or less) It is possible to increase the absorption rate and increase the heat absorption rate of the ITO conductive film, and by the MPA (Multi Photon Absorption) effect, ) Discloses a method of etching a transparent electrode for a touch panel using a laser.
The above-described conventional techniques disclose various methods of forming fine pattern electrodes using a laser, and describe a method of easily etching a transparent electrode by using high energy of a short wavelength band. However, There is no disadvantage.
It is an object of the present invention to provide a method of manufacturing a conductive fine pattern electrode using a laser, and more particularly, to a method of manufacturing a conductive fine pattern electrode using a laser, And a protective film using an insulating polymer is formed on the conductive electrode layer to protect the conductive electrode film. Using this technique of forming a conductive fine pattern electrode by changing the laser power, it is possible to solve the problem of high visibility of the transparent electrode, and it is possible to realize excellent pattern resolution and fine line width.
The present invention provides a method for manufacturing a semiconductor device, comprising: forming a metal nanowire layer on a substrate; Forming a protective layer on the metal metal nanowire layer; Etching the metal nanowire layer formed with the laser beam to form a pattern, wherein the non-etched surface is a conductive pattern and the etched surface is a non-conductive surface formed by breaking the metal nanowire by the laser beam The method of forming a pattern using laser etching according to the present invention includes the steps of:
The method of manufacturing a conductive fine pattern electrode according to the present invention is characterized in that the metal nanowires are uniformly arranged to form a low-resistance conductive electrode layer and a protective film using an insulating polymer is formed on the conductive electrode layer to protect the conductive electrode film have. Using this technique of forming a conductive fine pattern electrode by changing the laser power, it is possible to solve the problem of high visibility of the transparent electrode, and it is possible to realize excellent pattern resolution and fine line width.
FIG. 1 is a microphotograph of forming a conductive electrode layer by using metal nanowires on an insulating substrate, coating a protective layer for protecting the electrode layer thereon, and then irradiating a laser to form a fine pattern electrode.
FIGS. 2 and 3 illustrate a method of forming a conductive electrode layer using a metal nanowire on an insulating substrate, coating a protective film layer thereon to protect the electrode layer, To form a fine pattern electrode.
A pattern forming method using laser etching according to the present invention includes: forming a metal nanowire layer on a substrate; Forming a protective layer on the metal metal nanowire layer; Etching the metal nanowire layer formed with the laser beam to form a pattern, wherein the non-etched surface is a conductive pattern and the etched surface is a non-conductive surface formed by breaking the metal nanowire by the laser beam The method comprising the steps of:
The substrate may be at least one selected from the group consisting of polyimide (PI), polyethylene terephthalate (PET), polyether naphthalate (PEN), polyether sulfone (PES), nylon, polytetrafluoroethylene (PTFE) (PEEK), polycarbonate (PC), and polyarylate (PAR).
The metal nanowire layer may be formed by applying a metal nanowire coating liquid in which metal nanowires are dispersed in a solvent.
The metal nanowire coating liquid may further include at least one additive selected from a dispersant, a binder, a surfactant, a wetting agent, and a leveling agent.
The metal nanowire layer may be formed by a spin coating, a roll coating, a spray coating, a dip coating, a flow coating, a doctor blade and dispensing, an inkjet printing, A printing method, an offset printing method, a screen printing method, a pad printing method, a gravure printing method, a flexography printing method, a stencil printing method, and an imprinting method.
The protective layer may be formed of a thermosetting resin or a UV-curable resin.
In the step of etching with the laser beam, a gas medium or a solid-state medium may be used.
The solid-state medium may include Nd: YAG, Nd: YVO4, and Ytterbium fiber. Examples of the solid-state medium include He-Ne, CO 2 , Ar, Can be selected and used.
In the step of etching with the laser beam, the laser beam may have a wavelength of 300 to 2000 nm, and the laser beam may have a frequency of 100 to 1000 kHz. This soft etching can be used to form the nonconductive surface by disconnecting the metal wires on the etched surface.
The pattern is a conductive transparent electrode pattern and forms a transparent electrode. However, the present invention is not limited thereto.
Hereinafter, the present invention will be described in more detail.
A method of fabricating a conductive micropatterned electrode using a laser according to the present invention includes the steps of (i) forming a uniform conductive metal nanowire layer on various substrates, (ii) forming a layer of various polymer optically transparent and insulating on the conductive transparent electrode (Ii) forming a fine pattern electrode by directly irradiating the surface of the conductive film with a laser.
(I) a uniform metal nanowire layer can be formed on various substrates.
The substrate used in the present invention may be at least one selected from the group consisting of polyimide (PI), polyethylene terephthalate (PET), polyether naphthalate (PEN), polyether sulfone (PES), nylon, polytetrafluoroethylene (PTFE) A plastic film such as an ether ether ketone (PEEK), a polycarbonate (PC), a polyarylate (PAR), a glass substrate, or the like can be used. In addition to the above nonconductive substrate, all of the above-mentioned substrates coated with ITO, CNT, conductive polymer or the like can be used. The substrate can be selectively used according to the characteristics of the substrate according to the heat treatment temperature described later.
The conductive metal nanowires used in the step of forming the conductive layer in the present invention may be prepared by dispersing metal nanowires in a solvent and adding additives such as a dispersant, a binder, a surfactant, a wetting agent, and a leveling agent And the like.
The binder resin used for the conductive metal nanowire preferably has excellent adhesion to various substrates. Materials usable herein include organic polymer materials such as polypropylene, polycarbonate, polyacrylate, polymethylmethacrylate, cellulose acetate, polyvinyl chloride, polyurethane, polyester, alkyd resin, epoxy resin, , Phenol resins, phenol-modified alkyd resins, epoxy-modified alkyd resins, vinyl-modified alkyd resins, silicone-modified alkyd resins, acrylic melamine resins, polyisocyanate resins and epoxy ester resins. Do not.
In order to form the conductive electrode layer into a uniform thin film, a solvent is required. Examples of the solvent that can be used in this case include alcohols such as ethanol, isopropanol and butanol, glycols such as ethylene glycol and glycerin, ethylacetate, Acetates such as methoxypropyl acetate, carbitol acetate and ethyl carbitol acetate, ethers such as methylcellosolve, butyl cellosolve, diethyl ether, tetrahydrofuran and dioxane, methyl ethyl ketone, acetone, dimethyl Methylene-2-pyrrolidone, hydrocarbons such as hexane, heptane, dodecane, paraffin oil and mineral spirits, aromatics such as benzene, toluene and xylene, and aromatic hydrocarbons such as chloroform, methylene chloride, carbon Halogenated solvents such as tetrachloride, acetonitrile, dimethylsulfoxide or mixtures thereof And the like can be used.
As a method of forming the conductive electrode layer on the various substrates, a known general film forming method may be used, and there is no particular limitation if it is in accordance with the characteristics of the present invention. For example, it is possible to use a coating composition such as a spin coating, a roll coating, a spray coating, a dip coating, a flow coating, a doctor blade and dispensing, an inkjet printing, It is possible to select and use it by screen printing, pad printing, gravure printing, flexography printing, stencil printing, imprinting, or the like.
The thickness of the conductive layer is preferably 1.0 micron or less, more preferably 0.05 micron or more and 0.5 micron or less. The thickness of the conductive layer needs to be adjusted according to the linewidth and required resistance conditions to be implemented. Conductive layer drying is preferably carried out at a temperature of 80 to 200 DEG C, and may be performed in a temperature range where the substrate is not deformed.
(ii) Various optically transparent and insulating polymer layers can be formed on the conductive transparent electrode.
In the present invention, various polymer layers are formed on the electrode layer in order to protect the conductive electrode layer, improve the optical characteristics, and improve the reliability of the electrode such as adhesion, heat resistance, chemical resistance, flex resistance and the like. The materials used for the protective film are thermosetting type and UV curing type. The polymer is melted using a solvent, and examples of the solvent include alcohols, ketones, ethers, acetates, and aromatic solvents. As a method of forming a protective film layer on the conductive electrode layer, a known general film forming method may be used, and there is no particular limitation if it is in accordance with the characteristics of the present invention. For example, it is possible to use a coating composition such as a spin coating, a roll coating, a spray coating, a dip coating, a flow coating, a doctor blade and dispensing, an inkjet printing, It is possible to select and use it by screen printing, pad printing, gravure printing, flexography printing, stencil printing, imprinting, or the like. The drying of the protective film layer is preferably carried out at 80 to 200 ° C for 1 to 10 minutes in a hot air oven and in a hot air oven at 80 to 200 ° C for 1 to 10 minutes in case of UV curing type, And cured at 1000 to 2000 mJ.
(Ii) A fine pattern electrode can be formed by directly irradiating the surface of the conductive film with a laser.
In the present invention, a method of forming a fine pattern electrode in a state in which a conductive electrode layer is formed on various substrates with a uniform thickness and a protective film layer is uniformly formed on the electrode layer is presented. A laser beam having energy sufficient to vaporize or decompose the passivation layer material and the conductive electrode layer material can be used and line widths of various sizes can be formed according to the wavelength of the laser beam. The linewidth of a fine pattern can be realized to a minimum line width which can be directly patterned by a laser beam. Depending on a laser apparatus, a minimum line width is up to a submicrometer and a maximum line width is up to several hundred micrometers. Also, the shape of the fine pattern can be freely adjusted by adjusting the output energy of the laser beam. When using a laser beam, a fine pattern can be formed by partially using an optical isolator or a mask to advantageously adjust the shape of the beam to a fine pattern.
In the present invention, the most important technique in the process of forming a fine pattern on the conductive electrode layer including the protective film layer is to solve the problem of visibility regardless of the fine pattern line width, thereby realizing the index matching. For this purpose, a soft laser etching process must be carried out by appropriately adjusting the wavelength and laser energy of the laser used. As a gas medium, He-Ne, CO 2 , Ar, excimer laser, etc. can be used as a gas medium. Solid-state media include Nd: YAG, Nd : YVO4, Ytterbium fiber, etc. may be used. The wavelength of the laser beam can be selected to be 1.06 μm, 532 nm, 355 nm, 266 nm, 248 nm, or the like depending on the line width to be implemented, the kind of the etching material, and the degree of soft etching. The laser energy can be controlled by adjusting the frequency of laser etching parameters (pulse energy, E (J) = peak power (W) / frequency (Hz) . The usable frequency is suitably about 100-1000 kHz, and in the case of soft etching to solve the visibility problem, 300 kHz or more and 600 kHz or less is preferable. Also, the conductive suspended particles generated while forming a fine pattern by irradiating the laser can be cleanly removed by suction while blowing air while simultaneously irradiating the laser. In some cases, separate cleaning and air blowing processes may be added after forming a fine pattern.
In the present invention, when a conductive substrate coated with ITO, CNT, conductive polymer or the like is used, a method of irradiating and patterning a laser can be changed. Specifically, after forming an electrode film layer coated with a conductive oxide, a conductive metal film, and a conductive polymer substrate using a metal nanowire, the conductive electrode layer may be patterned with a fine line width by irradiating a laser, The conductive base material can be simultaneously patterned with a fine line width by using a laser. The line width of the conductive substrate and the conductive layer may be the same or may be patterned differently in some cases.
Hereinafter, the present invention will be described in more detail with reference to examples, but the scope of the present invention is not limited thereto.
Production Example 1 (Formation of metal nanowire layer)
Various amounts of metal nanowires and additives were added to pure water at various weight ratios and uniformly dispersed and sufficiently mixed to prepare a metal nano wire ink for a transparent electrode. Using the prepared metal nanowire ink, the conductive electrode thin film is coated on various base film by a bar coating method and dried in a hot air oven at 80-130 ° C for 1-10 minutes. Various substrates are provided with a hydrophilic group through a pretreatment process to uniformly coat electrode ink composed of a water solvent.
Production Example 2 (Formation of protective layer)
The protective electrode layer is prepared by coating the prepared conductive electrode with various concentrations of a thermosetting type and UV curing type protective film solution by the above-described coating method. The protective electrode solution is coated on the conductive electrode by a spin coating method and dried in a hot air oven at 120 ° C. for 1 to 10 minutes or the UV type is cured at 1000 to 1500 mJ in a UV curing apparatus. The electrical characteristics of the conductive electrode coated with the protective layer differ depending on the ratio of the metal nanowires, and specifically, it is in the range of 100-300? / ?. In addition, the optical characteristics are within the range of 89-91% of total light transmittance and 1-3% of haze, and optical characteristics are different depending on the choice of solvent.
Comparative example One
On the conductive electrode layer prepared in the same manner as in Production Example 1, a protective film was formed in the same manner as in Production Example 2. In order to form a fine pattern on the surface of the electrode, a fine pattern was formed by directly irradiating the surface of the electrode layer with an IR laser (manufacturer: IO TECHNICS) having a wavelength of 300-1064 nm at a frequency of 100 kHz and a pulse width of 1-50 ns. 2)
Example 2
On the conductive electrode layer prepared in the same manner as in Production Example 1, a protective film was formed in the same manner as in Production Example 2. In order to form a fine pattern on the surface of the electrode, a fine pattern was realized by directly irradiating the surface of the electrode layer with an IR laser (manufacturer: IO TECHNICS) having a wavelength of 300-1064 nm at a frequency of 400 kHz and a pulse width of 1-50 ns. 3)
Example 3
On the conductive electrode layer prepared in the same manner as in Production Example 1, a protective film was formed in the same manner as in Production Example 2. In order to form a fine pattern on the surface of the electrode, a fine pattern was realized by directly irradiating the surface of the electrode layer with an IR laser (manufacturer: IO TECHNICS) having a wavelength of 300-1064 nm at a frequency of 550 kHz and a pulse width of 1-50 ns. 3)
As described above, according to the present invention, by using this technique of forming a conductive fine pattern electrode by changing the laser power, it is possible to solve the problem of high visibility of the transparent electrode, and it is possible to realize excellent pattern resolution and fine line width.
Claims (10)
Forming a protective layer on the metal metal nanowire layer;
Etching the metal nanowire layer on which the protective layer is formed with a laser beam to form a pattern, wherein the non-etching surface is a conductive pattern, and the etching surface forms a non-conductive surface while the metal nanowire is broken by the laser beam. Pattern forming method using a laser etching comprising the step of.
The substrate may be at least one selected from the group consisting of polyimide (PI), polyethylene terephthalate (PET), polyether naphthalate (PEN), polyether sulfone (PES), nylon, polytetrafluoroethylene (PTFE) Wherein the film is at least one plastic film selected from the group consisting of polyethylene terephthalate (PEEK), polycarbonate (PC), and polyarylate (PAR) or a glass substrate.
Wherein the metal nanowire layer is formed by applying a metal nanowire coating liquid in which metal nanowires are dispersed in a solvent.
Wherein the metal nanowire coating solution further comprises at least one additive selected from a dispersing agent, a binder, a surfactant, a wetting agent, and a leveling agent. .
The metal nanowire layer may be formed by a spin coating, a roll coating, a spray coating, a dip coating, a flow coating, a doctor blade and dispensing, an inkjet printing, Wherein the pattern is formed by a method selected from the group consisting of offset printing, screen printing, pad printing, gravure printing, flexography printing, stencil printing, and imprinting.
Wherein the protective layer is formed of a thermosetting resin or a UV curable resin.
In the etching of the laser beam, a gas (Gas) medium or a solid-state (Solid-state) medium, characterized in that the pattern forming method using laser etching.
The gas medium is selected from He-Ne, CO 2 , Ar, and Excimer laser,
The solid-state medium, the pattern forming method using a laser etching, characterized in that for use selected from Nd: YAG, Nd: YVO4, and Ytterbium fiber.
In the step of etching with the laser beam, the laser beam wavelength is 300 ~ 2000nm, the laser beam frequency is a pattern forming method using a laser etching, characterized in that for performing a soft etching of 100 ~ 1000 kHz.
Wherein the pattern is a conductive transparent electrode pattern.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020120014419A KR101442727B1 (en) | 2012-02-13 | 2012-02-13 | Metho for forming patter used by laser etching |
| PCT/KR2013/001090 WO2013122365A1 (en) | 2012-02-13 | 2013-02-12 | Method for forming patterns using laser etching |
| CN201380019806.9A CN104246974B (en) | 2012-02-13 | 2013-02-12 | Utilize the pattern formation method of laser-induced thermal etching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020120014419A KR101442727B1 (en) | 2012-02-13 | 2012-02-13 | Metho for forming patter used by laser etching |
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| KR20130092857A true KR20130092857A (en) | 2013-08-21 |
| KR101442727B1 KR101442727B1 (en) | 2014-09-23 |
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| KR1020120014419A KR101442727B1 (en) | 2012-02-13 | 2012-02-13 | Metho for forming patter used by laser etching |
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| KR (1) | KR101442727B1 (en) |
| CN (1) | CN104246974B (en) |
| WO (1) | WO2013122365A1 (en) |
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| KR101485858B1 (en) * | 2014-03-24 | 2015-01-27 | 한국기계연구원 | Method of patterning a transparent electrode metal nanowires and a transparent electrode patterned metal nanowires thereby |
| KR101591305B1 (en) * | 2014-08-27 | 2016-02-03 | 한국항공대학교산학협력단 | Method for manufacturing nanofluids containing carbon nanotubes |
| CN107122074A (en) * | 2017-03-28 | 2017-09-01 | 深圳欧菲光科技股份有限公司 | The preparation method of contact panel |
| KR20190090518A (en) * | 2018-01-25 | 2019-08-02 | 한국기계연구원 | Apparatus for printing electrode and method for printing electrode |
| KR102181868B1 (en) * | 2020-06-24 | 2020-11-23 | 국민대학교산학협력단 | Method for Forming Micro Pattern on Surface of Wire |
| KR20220087214A (en) * | 2020-12-17 | 2022-06-24 | 충남대학교산학협력단 | Patterning method of electrode having metal nanowire |
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| KR100405977B1 (en) * | 2001-12-06 | 2003-11-14 | 엘지전자 주식회사 | Method for manufacturing nano wire |
| KR100691276B1 (en) * | 2005-08-25 | 2007-03-12 | 삼성전기주식회사 | Nanowire light emitting device and method of fabricating the same |
| KR100838344B1 (en) * | 2007-03-28 | 2008-06-17 | 연세대학교 산학협력단 | Method for patterning nanoparticles by pulsed laser |
| US8540922B2 (en) * | 2007-08-27 | 2013-09-24 | Hewlett-Packard Development Company, L.P. | Laser patterning of a carbon nanotube layer |
| CN102224596B (en) * | 2008-06-09 | 2015-06-17 | 三星电子株式会社 | Improved cnt/topcoat processes for making a transplant conductor |
| WO2010018733A1 (en) * | 2008-08-11 | 2010-02-18 | コニカミノルタホールディングス株式会社 | Transparent electrode, organic electroluminescent element, and method for producing transparent electrode |
| KR101734282B1 (en) * | 2009-10-01 | 2017-05-12 | 경기대학교 산학협력단 | Planar Light Source Device |
| JP5561714B2 (en) * | 2009-10-13 | 2014-07-30 | 日本写真印刷株式会社 | Transparent conductive film for display electrodes |
| KR101069582B1 (en) * | 2009-12-28 | 2011-10-05 | 전자부품연구원 | A cathode electrode having carbon nanotube in an electrical field emission device and a fabrication method thereof |
| US8604332B2 (en) * | 2010-03-04 | 2013-12-10 | Guardian Industries Corp. | Electronic devices including transparent conductive coatings including carbon nanotubes and nanowire composites, and methods of making the same |
-
2012
- 2012-02-13 KR KR1020120014419A patent/KR101442727B1/en active IP Right Grant
-
2013
- 2013-02-12 WO PCT/KR2013/001090 patent/WO2013122365A1/en active Application Filing
- 2013-02-12 CN CN201380019806.9A patent/CN104246974B/en not_active Expired - Fee Related
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| KR101485858B1 (en) * | 2014-03-24 | 2015-01-27 | 한국기계연구원 | Method of patterning a transparent electrode metal nanowires and a transparent electrode patterned metal nanowires thereby |
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| CN107122074B (en) * | 2017-03-28 | 2023-10-24 | 安徽精卓光显技术有限责任公司 | Manufacturing method of touch panel |
| KR20190090518A (en) * | 2018-01-25 | 2019-08-02 | 한국기계연구원 | Apparatus for printing electrode and method for printing electrode |
| KR102181868B1 (en) * | 2020-06-24 | 2020-11-23 | 국민대학교산학협력단 | Method for Forming Micro Pattern on Surface of Wire |
| KR20220087214A (en) * | 2020-12-17 | 2022-06-24 | 충남대학교산학협력단 | Patterning method of electrode having metal nanowire |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101442727B1 (en) | 2014-09-23 |
| CN104246974B (en) | 2018-03-13 |
| WO2013122365A1 (en) | 2013-08-22 |
| CN104246974A (en) | 2014-12-24 |
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