CN106324922A - Method for quickly manufacturing functional electrode layer with needed shape on substrate - Google Patents
Method for quickly manufacturing functional electrode layer with needed shape on substrate Download PDFInfo
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- CN106324922A CN106324922A CN201610752549.5A CN201610752549A CN106324922A CN 106324922 A CN106324922 A CN 106324922A CN 201610752549 A CN201610752549 A CN 201610752549A CN 106324922 A CN106324922 A CN 106324922A
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- required form
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
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- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
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Abstract
The invention provides a method for quickly manufacturing a functional electrode layer with a needed shape on a substrate. The method comprises the following steps: (1) manufacturing the functional electrode layer on the substrate; (2) directly manufacturing a resist layer with a needed shape on the functional electrode layer prepared in step (1) by using a template printing mode; (3) carrying out etching treatment on the functional electrode layer, obtained in the step (2), of the substrate; and (4) removing the resist layer with the needed shape on the substrate etched in the step (3), thereby obtaining the substrate with a functional electrode with a needed shape. The method is simple in process, the template printing mode is adopted to prepare the resist layer with the needed shape on the functional electrode layer within short time, and long time for removing a redundant resist layer part does not need to be consumed, so that preparation time for the resist layer with the needed shape can be greatly saved, and therefore, production time of the substrate with the functional electrode layer with the needed shape is shortened, and production efficiency is improved.
Description
Technical field
The present invention relates to micro-electronic machining field, on substrate, quickly prepare required form merit in particular to one
The method of energy electrode layer.
Background technology
At present, in flat pannel display (Flat Panel Display is called for short FPD) technology, due to liquid crystal display
(Liquid Crystal Display is called for short LCD) has compact, saves the advantages such as placing space, the most gradually replaces
Cathode ray tube (Cathode Ray Tube is called for short CRT), becomes the display of main flow.In various types of LCD, thin film
(Thin Film Transistor-Liquid Crystal Display is called for short TFT-to field-effect transistor liquid crystal display
LCD) there is function admirable, be suitable for the advantages such as mass automatic production, have become as the LCD product of main flow.
The preparation process of TFT-LCD need to be prepared on substrate designed functional electrode shape；Prior art makes
Preparing functional electrode on substrate by photoetching process, use photoresist is as resist, but employing photoetching process can not be directly at base
Prepare the resist layer of required form in basis, need to prepare one layer of resist layer on functional electrode layer, use UV mask
Exposure, then remove unnecessary resist layer, obtain the resist layer of required form；Use photoetching process complex procedures, and need long
Time removes unnecessary resist layer, and the production efficiency of whole TFT-LCD is produced impact, it is impossible to meet needs now quick
Produce the Production requirement of a large amount of TFT-LCD.
In view of this, the special proposition present invention.
Summary of the invention
It is an object of the invention to provide a kind of method quickly preparing required form functional electrode layer on substrate, described
The method quickly preparing required form functional electrode layer on substrate have that technique is simple, the one-tenth of the resist layer of required form
The production time of the substrate that the type time is short, have required form functional electrode layer is short, production efficiency advantages of higher.
In order to realize the above-mentioned purpose of the present invention, spy by the following technical solutions:
A kind of method quickly preparing required form functional electrode layer on substrate, comprises the steps:
(1) on substrate, functional electrode layer is prepared；
(2) use on the functional electrode layer prepared by step (1) mode of mould printing directly prepare have required
The resist layer of shape；
(3) the functional electrode layer of step (2) gained substrate is performed etching process；
(4) resist layer of the required form on substrate after being etched by step (3) gained is removed, and obtains having required shape
The substrate of shape functional electrode.
The method technique that the present invention quickly prepares required form functional electrode layer on substrate is simple, uses mould printing
Mode directly prepares the resist layer with required form, the tool that can go out mould printing as required on functional electrode layer
The resist layer having required form carries out fast setting, the subsequent technique such as can perform etching afterwards, uses the side of mould printing
Formula, the used time preparing the resist layer with required form on functional electrode layer is the shortest, and need not consume and go for a long time
Except unnecessary resist layer part, it is possible to greatly save the system of the resist layer of required form in TFT-LCD preparation technology
The standby time, thus shorten the production time of the substrate of required form functional electrode layer, improve production efficiency.
In described step (1), substrate is glass substrate.
Before substrate is prepared functional electrode layer, described substrate surface is carried out.Available deionized water, ethanol etc.
Liquid is carried out, and cleans and can remove the dust on glass substrate and spot, prevents the function prepared on a glass substrate
Electrode produces impact, it is ensured that the performance of functional electrode, carries out subsequent technique again, can use liter after the volatilization of substrate surface cleanout fluid
The mode of temperature accelerates the volatilization of substrate surface cleanout fluid.
Described step (1) is prepared the method for functional electrode layer on the panel of substrate both sides respectively and is included that sputtering, vacuum are steamed
Plating, ion plating or chemical gaseous phase deposition.
Described functional electrode layer is preferably ITO layer, in TFT-LCD manufacturing process, and ITO (Indium Tin Oxide, oxygen
Change indium stannum) by himself excellent characteristic, it is widely used in making transparent display electrode.
According to the needs of actual resist material, on the functional electrode layer prepared by step (1), preferably use template print
After the mode of brush directly prepares the resist layer with required form, gained resist layer is solidified.According to being used
The character of resist, ultraviolet can be used to irradiate modification, or heating makes the modes such as solvent volatilization carry out the against corrosion of required form
The solidification of oxidant layer.
Before functional electrode layer on step (2) gained substrate is performed etching process, to having functional electrode layer and institute
The substrate needing shape resist layer is carried out.The liquid such as available deionized water are carried out, and cleaning can remove substrate both sides
The dust produced in previous process and spot, prevent the impact on subsequent etching processes, and according to practical situation, substrate both sides are clear
Carry out subsequent technique again after washing liquid volatilization, the mode of intensification can be used to accelerate the volatilization of substrate surface cleanout fluid.
The resist layer of the required form on substrate after using solvent to be etched by step (3) gained dissolves to be removed.According to
The resist used, selects suitable solvent to dissolve, and aqueous solvent can be deionized water, developer solution etc., organic solvent
For ethanol, ether, acetone or benzene etc..
After the resist layer of required form is removed on substrate, substrate obtains the functional electrode layer of required form.
Repeat the above steps (1)-(4) can prepare the multilamellar functional electrode layer of required form on substrate afterwards.
The resist viscosity that described mould printing is used is 100-1000Pa s.
The resist viscosity that described mould printing is used is preferably 100-600Pa s.
Further, the resist viscosity that described mould printing is used is preferably 100-300Pa s, further preferably
For 200Pa s.
Present invention preferably uses more low viscous resist, the good fluidity of more low viscous resist, at mould printing
During, it is easier to it is printed on functional electrode layer by template, for full wafer substrate, can be the most complete
The mould printing of the functional electrode layer of whole described shapes on substrate, and the higher resist of viscosity is easily detected by being printed to
On functional electrode layer, viscosity is big due to viscosity compared with high resist, and the speed flowed out from template is relatively slow, needs to apply extra
It is extruded by example, even if again under extrusion operation, the speed that the resist that viscosity is higher flows out from template remains on relatively slow,
Cause the template print needing the longer time to complete the functional electrode layer of whole described shapes on substrate for full wafer substrate
Brush；Use the resist that viscosity is relatively low, be more beneficial for accelerating the template of the functional electrode layer of whole described shapes on full wafer substrate
Printing process, it is possible to greatly save the preparation time of the resist layer of required form in TFT-LCD preparation technology, thus contract
The production time of the substrate of short required form functional electrode layer, improve production efficiency.
The relatively low resist of viscosity is more liquid, the etching process of functional electrode layer may be produced impact, preferably
After the mode using mould printing on functional electrode layer directly prepares the resist layer with required form, against corrosion to gained
Oxidant layer solidifies.According to the character of the resist used, ultraviolet can be used to irradiate modification, or heating makes solvent volatilization etc.
Mode carries out the solidification of the resist layer of required form.
Compared with prior art, the invention have the benefit that
The method technique that the present invention quickly prepares required form functional electrode layer on substrate is simple, uses mould printing
Mode directly prepares the resist layer with required form, the tool that can go out mould printing as required on functional electrode layer
The resist layer having required form carries out fast setting, the subsequent technique such as can perform etching afterwards, uses the side of mould printing
Formula, the used time preparing the resist layer with required form on functional electrode layer is the shortest, and need not consume and go for a long time
Except unnecessary resist layer part, it is possible to greatly save the system of the resist layer of required form in TFT-LCD preparation technology
The standby time, thus shorten the production time of the substrate of required form functional electrode layer, improve production efficiency.
Accompanying drawing explanation
In order to be illustrated more clearly that the specific embodiment of the invention or technical scheme of the prior art, below will be to specifically
In embodiment or description of the prior art, the required accompanying drawing used is briefly described, it should be apparent that, in describing below
Accompanying drawing is some embodiments of the present invention, for those of ordinary skill in the art, before not paying creative work
Put, it is also possible to obtain other accompanying drawing according to these accompanying drawings.
The structural representation of the etching device that Fig. 1 is used by the embodiment of the present invention 1 etching process；
Reference:
1-etching groove；2-filter tank；3-defecator；
4-circulating device；Groove before 5-filter；6-filters pit.
Detailed description of the invention
Below in conjunction with the drawings and specific embodiments, technical scheme is clearly and completely described, but
It is to it will be understood to those of skill in the art that following described embodiment is a part of embodiment of the present invention rather than whole
Embodiment, is merely to illustrate the present invention, and is not construed as limiting the scope of the present invention.Based on the embodiment in the present invention, ability
The every other embodiment that territory those of ordinary skill is obtained under not making creative work premise, broadly falls into the present invention and protects
The scope protected.Unreceipted actual conditions person in embodiment, the condition advised according to normal condition or manufacturer is carried out.Agents useful for same
Or instrument unreceipted production firm person, being can be by the commercially available conventional products bought and obtain.
In describing the invention, it should be noted that term " " center ", " on ", D score, "left", "right", " vertically ",
Orientation or the position relationship of the instruction such as " level ", " interior ", " outward " they are based on orientation shown in the drawings or position relationship, merely to
Be easy to describe the present invention and simplifying describe rather than instruction or the hint device of indication or element must have specific orientation,
With specific azimuth configuration and operation, therefore it is not considered as limiting the invention.Additionally, term " first ", " second ",
" the 3rd " is only used for describing purpose, and it is not intended that indicate or hint relative importance.
In describing the invention, it should be noted that unless otherwise clearly defined and limited, term " is installed ", " phase
Even ", " connection " should be interpreted broadly, for example, it may be fixing connection, it is also possible to be to removably connect, or be integrally connected；Can
To be mechanical connection, it is also possible to be electrical connection；Can be to be joined directly together, it is also possible to be indirectly connected to by intermediary, Ke Yishi
The connection of two element internals.For the ordinary skill in the art, can understand that above-mentioned term is at this with concrete condition
Concrete meaning in invention.
Embodiment 1
A kind of method quickly preparing required form functional electrode layer on substrate, comprises the steps:
(1) on substrate, ITO functional electrode layer is formed by magnetron sputtering (sputter)；
(2) use stencil methods, the functional electrode layer prepared by step (1) is prepared the resist of required form
Layer；The resist used is photoresist, and resist viscosity is 200Pa s；
(3), after preparing the resist layer of required form on functional electrode layer, use ultraviolet light to irradiate 1min, gained is resisted
Erosion oxidant layer solidifies；
(4) use the etching device shown in Fig. 1, the functional electrode layer of step (3) gained substrate is performed etching process；Carve
Erosion liquid can use HCL, HNO3、H2The mixed solution of O, volume ratio is HCL:HNO3: H2O=9:1:6, H in etching liquid+Concentration excellent
Elect 6.5mol/L as；
(5) resist layer of the required form on substrate after using solvent to be etched by step (4) gained is removed, and is had
There is the substrate of required form functional electrode.
Etching device structure used by the present embodiment is as it is shown in figure 1, described etching device includes one or more etching groove 1 Hes
Filter tank 2；Described filter tank 2 is provided with defecator；Described filter tank 2 is connected by pipeline with each etching groove 1 respectively；Institute
Stating filter tank 2 to be connected by pipeline with circulating device, described circulating device is connected by pipeline with each etching groove 1 respectively.
The present embodiment etching device simple in construction, etching groove 1, composition closed circuit between filter tank 2 and circulating device, carve
Etching liquid can be filtered, mistake at etching groove 1, circulate between filter tank 2 and circulating device by erosion liquid by filter tank 2
Leach due to the carrying out of etching technics, the waste residue being mixed with in etching liquid, it is possible to ensure that etching technics is the most continual and carry out, energy
Enough improve production efficiency and the utilization ratio of etching liquid.
Described defecator is filter net device, and described filter net device includes one or more layers filter screen of superposition, described filter screen
Filter tank 2 is divided into groove 5 and filter pit 6 before filter by device, and wherein before filter, groove 5 is connected by pipeline with each etching groove 1 respectively, filter
Pit 6 is connected by pipeline with circulating device.
Waste residue in etching liquid can effectively be filtered by filter net device, it is ensured that the quality of filter liquor, it is ensured that etching work
Being normally carried out of skill.Multistorey strainer mesh can be set, be favorably improved filter efficiency, it is ensured that the quality of filter liquor.
Arbitrary etching groove 1 position is higher than filter tank 2 tip position.
The position of etching groove 1 is set above filter tank 2, contributes to making the etching liquid in etching groove 1 rely on gravity, from
Dynamic outflow, flows in filter tank 2, saves the energy, it is ensured that etching liquid flows.
Described filter tank 2 is connected by pipeline with bottom each etching groove 1 respectively.
Etching liquid outlet in etching groove 1 is arranged on bottom etching groove 1, contributes in etching groove 1 produced useless
Slag is got rid of in time, it is ensured that the quality of etching liquid in etching groove 1, it is ensured that etching technics is continuously, efficiently, carry out in high quality.
Described circulating device is higher than arbitrary etching groove 1 top.
The position of circulating device is set above arbitrary etching groove 1, and circulating device can will be passed through in filter tank 2
The etching liquid of filter takes out height, and along pipeline, relies on gravity, automatically flow out, flow in filter tank 2, saves the energy, it is ensured that etching liquid follows
Circulation moves.
Described circulating device is connected by pipeline with each etching groove 1 top respectively.Contribute to the etching liquid through filtering
Flow back in etching groove 1 smoothly, it is ensured that what etching liquid circulated is smoothed out.
Each etching groove 1 is connected with feed tube respectively.Described feed tube for new etching liquid interpolation or supplement, described in enter
On liquid pipe, valve is set, for controlling interpolation or the magnitude of recruitment of new etching liquid.
It is respectively provided with cover plate on each etching groove 1.Contribute to preventing etching liquid to be contaminated.
Filter tank 2 cover plate is set on filter tank 2.Contribute to preventing etching liquid to be contaminated.
On every pipeline that described circulating device is connected with each etching groove 1, it is respectively provided with valve, at certain etching groove 1
In the case of not performing etching technique, can be by corresponding valve closing, etching liquid the most after filtering is no longer flow into this etching groove 1
In.
Described circulating device is pump.
Being respectively provided with spray equipment on each etching groove 1, spray equipment can be to sticking to interior, the pipeline in/out of etching groove 1
Waste residue at Kou is carried out removing.
The using method of above-mentioned a kind of etching device, comprises the steps:
In etching groove 1, add etching liquid, open circulating device, make etching liquid successively along etching groove 1, filter tank 2, circulation
Device, the direction of etching groove 1 are circulated flowing, perform etching technique in etching groove 1, according to practical situation, to filter tank 2
In waste residue clear up.
The using method technique of etching device of the present invention is simple, etching liquid re-use during for circulating, and and
Shi Jinhang filters, it is ensured that the quality of etching liquid, can carry out the waste residue of accumulation in filter tank 2 according to actually used situation
Cleaning in time, this process is not required to shut down, can be carried out continuously etching technics, it is possible to increase the utilization effect of production efficiency and etching liquid
Rate.
Embodiment 2
A kind of method quickly preparing required form functional electrode layer on substrate, comprises the steps:
(1) on substrate, ITO functional electrode layer is formed by magnetron sputtering (sputter)；
(2) use stencil methods, the functional electrode layer prepared by step (1) is prepared the resist of required form
Layer；The resist used is photoresist, and resist viscosity is 300Pa s；
(3), after preparing the resist layer of required form on functional electrode layer, heat temperature raising is used, to gained resist layer
Solidify；
(4) use the etching device described in embodiment 1, the functional electrode layer of step (3) gained substrate is performed etching place
Reason；Etching liquid can use HCL, HNO3、H2The mixed solution of O, volume ratio is HCL:HNO3: H2O=9:1:6, H in etching liquid+'s
Concentration is preferably 6.5mol/L；
(5) resist layer of the required form on substrate after using solvent to be etched by step (4) gained is removed, and is had
There is the substrate of required form functional electrode.
Embodiment 3
A kind of method quickly preparing required form functional electrode layer on substrate, comprises the steps:
(1) on substrate, ITO functional electrode layer is formed by magnetron sputtering (sputter)；
(2) use stencil methods, the functional electrode layer prepared by step (1) is prepared the resist of required form
Layer；The resist used is photoresist, and resist viscosity is 1000Pa s；
(3) use the etching device described in embodiment 1, the functional electrode layer of step (2) gained substrate is performed etching place
Reason；Etching liquid can use HCL, HNO3、H2The mixed solution of O, volume ratio is HCL:HNO3: H2O=9:1:6, H in etching liquid+'s
Concentration is preferably 6.5mol/L；
(4) resist layer of the required form on substrate after using solvent to be etched by step (3) gained is removed, and is had
There is the substrate of required form functional electrode.
The method technique that the present invention quickly prepares required form functional electrode layer on substrate is simple, uses mould printing
Mode directly prepares the resist layer with required form, the tool that can go out mould printing as required on functional electrode layer
The resist layer having required form carries out fast setting, the subsequent technique such as can perform etching afterwards, uses the side of mould printing
Formula, the used time preparing the resist layer with required form on functional electrode layer is the shortest, and need not consume and go for a long time
Except unnecessary resist layer part, it is possible to greatly save the system of the resist layer of required form in TFT-LCD preparation technology
The standby time, thus shorten the production time of the substrate of required form functional electrode layer, improve production efficiency.
Although illustrate and describing the present invention with specific embodiment, but it will be appreciated that without departing substantially from the present invention's
May be made that in the case of spirit and scope many other change and amendment.It is, therefore, intended that in the following claims
Including all such changes and modifications belonged in the scope of the invention.
Claims (10)
1. the method quickly preparing required form functional electrode layer on substrate, it is characterised in that comprise the steps:
(1) on substrate, functional electrode layer is prepared；
(2) use the mode of mould printing directly to prepare on the functional electrode layer prepared by step (1) and there is required form
Resist layer；
(3) the functional electrode layer of step (2) gained substrate is performed etching process；
(4) resist layer of the required form on substrate after being etched by step (3) gained is removed, and obtains having required form merit
The substrate of energy electrode.
A kind of method quickly preparing required form functional electrode layer on substrate the most according to claim 1, its feature
Being, in described step (1), substrate is glass substrate.
A kind of method quickly preparing required form functional electrode layer on substrate the most according to claim 1, its feature
Being, described step (1) is prepared the method for functional electrode layer on substrate and is included sputtering, vacuum evaporation, ion plating or chemistry gas
Deposit mutually.
A kind of method quickly preparing required form functional electrode layer on substrate the most according to claim 1, its feature
It is, before substrate is prepared functional electrode layer, described substrate surface is carried out.
A kind of method quickly preparing required form functional electrode layer on substrate the most according to claim 1, its feature
It is, the functional electrode layer prepared by step (1) uses the mode of mould printing directly prepare and there is required form
After resist layer, gained resist layer is solidified.
A kind of method quickly preparing required form functional electrode layer on substrate the most according to claim 1, its feature
It is, before the functional electrode layer on step (2) gained substrate is performed etching process, to having functional electrode layer and required shape
The substrate of shape resist layer is carried out.
A kind of method quickly preparing required form functional electrode layer on substrate the most according to claim 1, its feature
Being, the resist layer of the required form on substrate after using solvent to be etched by step (3) gained dissolves to be removed.
A kind of method quickly preparing required form functional electrode layer on substrate the most according to claim 1, its feature
Being, the resist viscosity that described mould printing is used is 100-1000Pa s.
A kind of method quickly preparing required form functional electrode layer on substrate the most according to claim 8, its feature
Being, the resist viscosity that described mould printing is used is 100-600Pa s.
A kind of method quickly preparing required form functional electrode layer on substrate the most according to claim 9, its feature
Being, the resist viscosity that described mould printing is used is 100-300Pa s, preferably 200Pa s.
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| CN201610752549.5A CN106324922A (en) | 2016-08-29 | 2016-08-29 | Method for quickly manufacturing functional electrode layer with needed shape on substrate |
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| CN201610752549.5A CN106324922A (en) | 2016-08-29 | 2016-08-29 | Method for quickly manufacturing functional electrode layer with needed shape on substrate |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63228535A (en) * | 1987-03-18 | 1988-09-22 | 沖電気工業株式会社 | Formation of electrode pattern |
| US4838656A (en) * | 1980-10-06 | 1989-06-13 | Andus Corporation | Transparent electrode fabrication |
| CN1764350A (en) * | 2004-10-15 | 2006-04-26 | 播磨化成株式会社 | Method for removing resin mask layer and method for manufacturing solder bumped substrate |
| CN104246974A (en) * | 2012-02-13 | 2014-12-24 | 印可得株式会社 | Method for forming patterns using laser etching |
| CN105870107A (en) * | 2015-01-22 | 2016-08-17 | 保险丝公司 | Surface-mountable electrical circuit protection device |
-
2016
- 2016-08-29 CN CN201610752549.5A patent/CN106324922A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4838656A (en) * | 1980-10-06 | 1989-06-13 | Andus Corporation | Transparent electrode fabrication |
| JPS63228535A (en) * | 1987-03-18 | 1988-09-22 | 沖電気工業株式会社 | Formation of electrode pattern |
| CN1764350A (en) * | 2004-10-15 | 2006-04-26 | 播磨化成株式会社 | Method for removing resin mask layer and method for manufacturing solder bumped substrate |
| CN104246974A (en) * | 2012-02-13 | 2014-12-24 | 印可得株式会社 | Method for forming patterns using laser etching |
| CN105870107A (en) * | 2015-01-22 | 2016-08-17 | 保险丝公司 | Surface-mountable electrical circuit protection device |
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