CN113793718B - Thin film electrode and preparation method and application thereof - Google Patents
Thin film electrode and preparation method and application thereof Download PDFInfo
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- CN113793718B CN113793718B CN202110968887.3A CN202110968887A CN113793718B CN 113793718 B CN113793718 B CN 113793718B CN 202110968887 A CN202110968887 A CN 202110968887A CN 113793718 B CN113793718 B CN 113793718B
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
- H01B13/0026—Apparatus for manufacturing conducting or semi-conducting layers, e.g. deposition of metal
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The invention provides a thin film electrode, a preparation method and application thereof, wherein the thin film electrode comprises a substrate layer and an electrode layer, wherein nano metal wires or ITO (indium tin oxide) are distributed in the electrode layer, and the nano metal wires are connected with each other to form a whole in the electrode layer corresponding to a conductive area; cracks exist between the nano metal wires in the electrode layers corresponding to the insulating regions. The preparation method of the film electrode can realize the preparation of the specific circuit electrode by only two times of coating, and compared with the laser etching or yellow etching mode in the prior art, the preparation method of the film electrode has the advantages of simpler and more convenient process, higher efficiency, lower cost and better stability; the conductive area and the non-conductive area in the film electrode are smooth in appearance, have no obvious bulges or depressions, are used as electrodes in touch screens and display screens, have good shadow eliminating effect and good ageing resistance, and can obviously improve the display effect of the touch screens and the display screens.
Description
Technical Field
The invention relates to the technical field of transparent thin film electrodes, in particular to a thin film electrode, and a preparation method and application thereof.
Background
The conductive film is a conductive film, such as a nano metal wire conductive film and an ITO film, and is widely applied to the fields of displays, touch screens and the like.
However, the above-mentioned conductive thin film, whether using a nano metal wire or an ITO (Indium tin oxide) material, needs to be made into a conductive line by laser etching or yellow etching in the process of preparing the electrode, and both etching methods have drawbacks: the laser etching mode requires high cost of laser equipment, has low production efficiency and low productivity; the etching solution used in the yellow etching mode has certain harm to human body after long-term use, serious environmental pollution, complex process and low yield of final products. In addition, the electrode shadow eliminating difference prepared by adopting the etching mode is characterized in that the conductive material in the etching area is etched to ensure that the area is not conductive, the nano metal wire or ITO in the unetched area is reserved to form a conductive area, the content of the nano conductive material in the two areas is greatly different, the difference of light transmittance and haze is directly caused, the conductive electrode shadow eliminating difference prepared by adopting the etching mode is produced, and the display effect of a display or a touch screen is poor.
In view of this, a new solution is needed to solve the above technical problems.
Disclosure of Invention
The invention aims to solve the technical problems of poor shadow eliminating effect, complex manufacturing process, high cost and large harm of products caused by large difference of substance contents in a conductive area and a non-conductive area in the prior art due to the fact that an etching technology is adopted to manufacture a film electrode, and provides the film electrode, the preparation method and the application thereof, so that the purposes of good shadow eliminating effect, good display effect, simple manufacturing process, high efficiency and low cost of the products are achieved.
In order to achieve the above purpose, the invention adopts the following technical means:
a first aspect of the present invention provides a thin film electrode comprising a substrate layer;
an electrode layer is arranged on the surface of the substrate layer, and nano metal wires or ITO are distributed in the electrode layer; the electrode layer is divided into a conductive area and an insulating area, and the conductive areas are distributed according to a preset circuit;
wherein, in the electrode layer corresponding to the conductive area, the nano metal wires are connected with each other to form a whole; and in the electrode layer corresponding to the insulating region, cracks exist between the nano metal wires so as to make the region nonconductive.
As a further improvement, the substrate layer comprises a flexible substrate layer or a rigid substrate layer;
the flexible substrate layer is made of PET, PEN or PI;
the rigid substrate layer is made of glass, PMMA or quartz plates;
the nano metal wire comprises a nano silver wire, a nano copper wire or a nano gold wire.
As a further improvement, the electrode layer comprises a protective layer which is paved on the surface of the electrode layer or is arranged in the surface layer of the electrode layer.
As a further improvement, the material of the protective layer comprises at least one of thermosetting resin and photo-curing resin;
the thermosetting resin comprises one or more of phenolic resin, epoxy resin, unsaturated polyester, amino resin, silicone resin, furan resin, polybutadiene resin and organic silicon resin;
the light-cured resin comprises one or more of epoxy acrylic resin, polyurethane acrylic resin, polyester acrylic resin, polyether acrylic resin, pure acrylic resin and vinyl resin.
The second aspect of the present invention provides a method for producing a thin film electrode, comprising the steps of:
s1, preparing a conductive layer material: the conductive layer material comprises nano metal wires, a solvent and a dispersing agent;
s2, preparing a sol layer material: the sol layer material comprises one or more of zirconia sol, titania sol, zinc oxide sol and silica sol;
s3, coating the conductive layer material on the surface of the substrate layer, and forming a conductive layer by surface drying; coating the sol layer material on the surface of the conductive layer according to a preset pattern to form a sol layer;
s4, baking the substrate layer to enable the conductive layer and the sol layer to be solidified to form an electrode layer, so that a thin film electrode is obtained;
the steps S1 and S2 can be exchanged or performed simultaneously.
As a further improvement, the method further comprises the following steps:
s5, preparing a protective layer material;
the step S5 is arranged before the step S3, and the sequence of the steps S1, S2 and S5 can be arbitrarily exchanged or simultaneously carried out;
the protective layer material may be coated on the outer surface of the sol layer, or may be coated between the conductive layer and the sol layer.
As a further improvement, the surface drying temperature is not more than 60 ℃;
the baking and curing temperature is 120-150 ℃.
As a further improvement, the nano metal wire comprises a nano silver wire, a nano copper wire or a nano gold wire;
the solvent comprises one or more of alcohols, ethers, esters, ketones and hydrocarbons;
the dispersant comprises diammonium silver hydroxide, tetra ammonium copper hydroxide or imine gold complex.
As a further improvement, the method for preparing the sol layer material in the step S2 includes:
alkoxide, acid catalyst and alcohol are mixed according to the mass ratio of 1:0.1-0.5: 8-25, and stirring for 1-3 h to obtain a solution A;
deionized water, alcohol and inhibitor are mixed and stirred for 1 to 3 hours according to the mass ratio of 1:15 to 30:0.03 to 0.06 to obtain solution B;
and (3) dropwise adding the solution B into the solution A while continuously stirring, continuously stirring for 2-5 h after the dropwise adding, and finally aging the obtained solution at room temperature for 24-48h to obtain the sol layer material.
The third aspect of the invention provides an application of the thin film electrode, wherein the thin film electrode is used as an electrode of a touch screen, a solar cell, a liquid crystal handwriting board, an electronic curtain, a heating film or an LED display screen.
Compared with the prior art, the invention has the following technical effects:
the preparation method of the film electrode provided by the invention can realize the preparation of the specific circuit electrode by only two times of coating, and the coating process such as silk screen printing, ink jet printing and the like is relatively mature in technology, compared with laser etching or yellow light etching, the preparation method of the film electrode has the advantages of simpler process, higher efficiency, lower cost and better stability, and is beneficial to improving the qualification rate; the conductive area and the non-conductive area in the thin film electrode provided by the invention are smooth in appearance, have no obvious bulge or recess, are used as electrodes in touch screens and display screens, have good shadow eliminating effect and good ageing resistance, and can obviously improve the display effect of the touch screens and the display screens; in addition, because the laser etching or yellow light etching process is omitted, the matched production equipment is relatively simple, the cost is lower, and the industrial popularization is facilitated.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic view showing the structure of a thin film electrode according to a preferred embodiment of the present invention;
FIG. 2 is a schematic view showing the structure of a thin film electrode according to another preferred embodiment of the present invention;
FIG. 3 shows an electron microscope image of the conductive region of the thin film electrode of the present invention;
fig. 4 shows an electron microscope image of the insulating region of the thin film electrode of the present invention.
Description of main reference numerals:
a base material layer-11; a conductive layer 12; sol layer-13; an electrode layer-20; and (5) a protective layer-14.
Detailed Description
Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative only and are not to be construed as limiting the invention.
In the description of the present invention, it should be understood that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present invention, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
In the present invention, unless expressly stated or limited otherwise, a first feature "up" or "down" a second feature may be the first and second features in direct contact, or the first and second features in indirect contact via an intervening medium. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is level higher than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.
Example 1
Referring to fig. 1, the present invention discloses a thin film electrode, which includes a substrate layer 11, and an electrode layer 20 and a protective layer 14 disposed on the surface of the substrate layer 11.
The substrate layer 11 may be a flexible substrate layer 11, such as PET, PEN, or PI; the substrate layer 11 may also be a rigid substrate layer 11, such as a glass, PMMA or quartz plate; the specific material is selected according to the specific application scene of the thin film electrode.
The electrode layer 20 is coated on the surface of the substrate layer 11, and nano metal wires are distributed in the electrode layer 20; the electrode layer 20 is macroscopically divided into conductive areas and insulating areas, and the conductive areas are distributed according to preset lines, i.e. the electrode layer 20 has a certain pattern from the appearance, the pattern is formed by conductive lines and non-conductive areas together, and the specific shape of the pattern is determined according to the function requirement of a specific circuit.
Wherein, in the electrode layer 20 corresponding to the conductive region, the nano metal wires are connected with each other to form a whole, thereby realizing the conductive function; and in the electrode layer 20 corresponding to the insulating region, cracks exist between the nano metal wires, and the crack depth penetrates through the upper and lower surfaces of the electrode layer 20 or the crack depth occupies a large half of the thickness of the whole electrode layer 20, so that the region is not conductive.
It should be noted that the above-mentioned conduction and non-conduction are relative concepts in the art, and generally speaking, the conduction means that the sheet resistance of the thin film electrode is less than 10 3 Ohm, the non-conductive refers to that the sheet resistance of the film electrode is more than 10 6 Ohmic.
Referring to fig. 4, the cracks are microscopically observable structures, invisible to the naked eye, and typically have a size of not less than 0.1 μm; the size of the crack is large enough compared to the distance between the nanowire and the nanowire to affect the electrical conductivity of a region of the electrode layer 20.
The nano metal wires comprise nano silver wires, nano copper wires or nano gold wires, the sizes, the characteristics and the manufacturing methods of the nano metal wires are prior art in the field, are not important points of the invention, and are not repeated here.
The protective layer 14 may be applied to the surface of the electrode layer 20 (as shown in fig. 1) or may be disposed within the surface of the electrode layer 20 (as shown in fig. 2). The location of the protective layer 14 is determined by the specific manufacturing process, as will be described in more detail below, whether it is disposed on the surface of the electrode layer 20 or within the surface of the electrode layer 20.
The protective layer 14 has the main functions of physically protecting the electrode layer 20, preventing the surface of the electrode layer 20 from being scratched, and preventing the surface of the electrode layer 20 from being isolated from the external environment, so as to avoid the contact of the conductive substance of the electrode layer 20 with air, effectively overcome the deterioration of chemical stability caused by the phenomena of electric corrosion, oxidation and the like of the electrode layer 20, and finally shorten the service life of the electrode.
The material of the protective layer 14 is at least one of thermosetting resin and photo-curing resin with high light transmittance, and the protective layer 14 obtained by the material is ultrathin and insulating, and has no obvious influence on the conductivity, light transmittance and haze of the electrode layer 20.
Specifically, the thermosetting resin comprises one or more of phenolic resin, epoxy resin, unsaturated polyester, amino resin, silicone resin, furan resin, polybutadiene resin and organic silicon resin; the light-cured resin comprises one or more of epoxy acrylic resin, polyurethane acrylic resin, polyester acrylic resin, polyether acrylic resin, pure acrylic resin and vinyl resin.
The preparation method of the film electrode comprises the following steps:
s1, preparing a conductive layer 12 material: the conductive layer 12 material includes nanowires, a solvent, and a dispersant.
In some embodiments, the nanowire comprises a nanosilver wire, or a nanosilver wire; the solvent comprises one or more of alcohols, ethers, esters, ketones and hydrocarbons; the dispersant comprises diammonium silver hydroxide, tetra ammonium copper hydroxide or imine gold complex.
It should be noted that the material of the conductive layer 12 is prepared by a conventional process in the art, which is not described herein.
S2, preparing a sol layer 13 material: the sol layer 13 material comprises one or more of zirconia sol, titania sol, zinc oxide sol and silica sol.
Specifically, taking carbon dioxide sol as an example, the steps for preparing the sol layer 13 are as follows:
titanium metal alkoxide, acid catalyst and alcohol are mixed according to the mass ratio of 1:0.1-0.5: 8-25, and stirring for 1-3 h to obtain a solution A;
deionized water, alcohol and inhibitor are mixed and stirred for 1 to 3 hours according to the mass ratio of 1:15 to 30:0.03 to 0.06 to obtain solution B;
and (3) dropwise adding the solution B into the solution A while continuously stirring, continuously stirring for 2-5 h after the dropwise adding is finished, and finally aging the obtained solution at room temperature for 24-48h to obtain the titanium dioxide sol.
Other sol layer 13 materials are prepared in a similar manner, except that the alkoxide needs to be replaced by a corresponding metal alkoxide or silicon alkoxide, and the corresponding sol can be obtained through the steps.
S5, preparing a protective layer 14 material.
The preparation process of the material of the protective layer 14 is performed by adopting a conventional operation means in the field, and generally, the material of the protective layer 14 is prepared from at least one of thermosetting resin and photo-curing resin with high light transmittance. For example, in some of these embodiments, the thermosetting resin comprises one or more of phenolic resin, epoxy resin, unsaturated polyester, amino resin, silicone resin, furan resin, polybutadiene resin, silicone resin; the light-cured resin comprises one or more of epoxy acrylic resin, polyurethane acrylic resin, polyester acrylic resin, polyether acrylic resin, pure acrylic resin and vinyl resin.
It should be noted that the order of the steps S1, S2 and S5 may be arbitrarily changed or performed simultaneously. The three materials are preparation materials for manufacturing the thin film electrode of the invention, and the preparation is not orderly divided.
S3, coating the material of the conductive layer 12 on the surface of the substrate layer 11, and forming the conductive layer 12 by surface drying; then coating the material of the sol layer 13 on the surface of the conductive layer 12 according to a preset pattern to form the sol layer 13; finally, the surface of the sol layer 13 is coated with the protective layer 14 (as shown in fig. 1).
In other embodiments, the method of step S3 may be replaced with:
coating the material of the conductive layer 12 on the surface of the substrate layer 11 to form a conductive layer 12; then coating the protective layer 14 on the surface of the conductive layer 12, and drying the conductive layer 12 and the protective layer 14; finally, the material of the sol layer 13 is coated on the surface of the protective layer 14 according to a preset pattern to form the sol layer 13 (as shown in fig. 2).
The three-layer material has certain fluidity in the preparation process and is not completely fixed, so that the three-layer material can be mutually infiltrated and permeated after being coated.
The coating process comprises spraying, silk screen printing and ink jet printing.
The surface drying is low-temperature drying, and the temperature is generally not higher than 60 ℃; preferably from 35℃to 60 ℃.
And S4, baking the substrate layer 11 to fuse and solidify the conductive layer 12, the sol layer 13 and the protective layer 14, thereby obtaining the thin film electrode.
In general, both the conductive layer 12 and the sol layer 13, which play a major role in conductivity, are defined as electrode layers 20.
Specifically, the baking and curing temperature is 120-150 ℃.
When the thin film electrode obtained by the preparation method is observed under an electron microscope, cracks can be found in the thin film region coated with the sol layer 13, and further, the crack depth penetrates through the upper surface and the lower surface of the electrode layer 20 or the crack depth accounts for a majority of the thickness of the whole electrode layer 20; while the film area not coated with sol layer 13 presents a dense continuous structure. The area of the coated sol layer 13 has a sheet resistance exceeding 10 by impedance test 6 Ohm, which is regarded in the art as non-conductive, but uncoatedThe area sheet resistance of the sol-coated layer 13 is lower than 10 3 Ohmic, which is regarded in the art as electrically conductive. The conductive area of the electrode layer 20 is defined as a conductive area and the non-conductive area of the electrode layer 20 is defined as an insulating area.
By purposefully coating the sol layer 13 at the set position of the conductive layer 12, a circuit pattern satisfying a certain circuit function, that is, a circuit pattern in which conductive areas are distributed according to a preset line, can be finally obtained.
From the above, the electrode layer 20 is actually obtained by fusing and interacting two material layers, and the specific forming principle is as follows:
the sol layer 13 has a low surface tension and permeability. The sol layer 13 is selectively coated on the upper surface of the conductive layer 12 or on the upper surface of the protective layer 14, so that the region where the sol layer 13 is not coated forms a circuit. Before the sol layer 13 is coated, the conductive layer 12 and the transparent protective layer 14 are both surface-dried by adopting a low-temperature drying mode, then the sol layer 13 is coated and then baked and cured at a high temperature, and the film in the area coated with the sol layer 13 is cracked after being cured at a high temperature (shown in fig. 4), so that the area is not conductive, and the films in other areas not coated with the sol layer 13 are cured at a high temperature to form a conductive film with compact structure (shown in fig. 3), namely a conductive circuit in the electrode structure. Explanation of the phenomenon of this process: the conductive layer 12 and the transparent protective layer 14 before the sol layer 13 is coated are both formed into an incompletely cured conductive film layer with loose structure by adopting a low-temperature surface drying mode, and then the sol layer 13 selectively coated on the surface of the conductive film layer can be permeated into the conductive film layer due to low surface tension and permeability. Because the material of the sol layer 13 has the characteristic of thermodynamic instability, then polycondensation (dehydration polycondensation M-OH+HO-M- & gt M-O-M+HOH OR alcohol-loss polycondensation M-OR+HO-M- & gt M-O-M+HOR) can occur in the high temperature curing process due to the fact that the sol layer 13 and the conductive layer 12 react under the high temperature condition; during the high temperature process, along with the volatilization of the solvent (i.e. the solvent which is not completely volatilized and remains in the surface drying process), the film layer has a free shrinkage tendency, biaxial plane tensile stress is generated during the cooling process, during the process, the interface formed between the sol layer 13 and the conductive layer 12 generates great residual thermal stress due to the mismatch of thermal and mechanical properties, so that the interface of the sol layer 13 and the conductive layer 12 starts to crack (as shown in fig. 4) and extends to penetrate into the conductive layer 12, and therefore, the continuity structure of the conductive layer 12 in the area is destroyed, and thus, the conductive layer is nonconductive; whereas the region where the sol layer 13 is not coated is cured to form a conductive film having a dense structure (as shown in fig. 3), and thus conductivity is not affected. Since the generated cracks are steady-state and the process is irreversible, the cracks cannot be repaired by heating at high temperature, and the stability of the prepared film electrode is extremely high.
In summary, the preparation method of the thin film electrode provided by the invention can realize the preparation of the specific circuit electrode only through two times of coating, and the coating process such as spraying, silk screen printing, ink jet printing and the like is relatively mature in technology, compared with laser etching or yellow light etching, the preparation method of the thin film electrode has the advantages of simpler process, higher efficiency, lower cost and better stability, and is beneficial to improving the qualification rate of products; the conductive area and the non-conductive area in the thin film electrode provided by the invention are smooth in appearance, have no obvious bulge or recess, are used as electrodes in touch screens and display screens, have good shadow eliminating effect and good ageing resistance, and can obviously improve the display effect of the touch screens and the display screens; in addition, because the laser etching or yellow light etching process is omitted, the matched production equipment is relatively simple, the cost is lower, and the industrial popularization is facilitated.
The invention also discloses application of the thin film electrode, for example, the thin film electrode is used as an electrode of a touch screen, a solar cell, a liquid crystal handwriting board, an electronic curtain, a heating film or an LED display screen, has good shadow eliminating effect and ageing resistance, and can obviously improve the display effect of the touch screen and the display screen.
Example two
The embodiment discloses a thin film electrode, which comprises a substrate layer 11, an electrode layer 20 and a protective layer 14, wherein the electrode layer 20 and the protective layer 14 are arranged on the surface of the substrate layer 11.
The structure and preparation process of the substrate layer 11 and the protective layer 14 of this embodiment are the same as those of the first embodiment, except that: the material of the conductive layer 12 forming the electrode layer 20 is different from that of the first embodiment, the conductive layer 12 of this embodiment adopts ITO (Indium tin oxide), but the formulation and preparation method of the sol layer 13 still adopts the same material as that of the first embodiment, and the final process method for manufacturing the thin film electrode is also the same as that of the first embodiment.
The ITO material of the conductive layer 12 in this embodiment is prepared by the prior art or is directly purchased in the market, and the formulation and specific preparation method thereof are not described in detail in the present invention.
In the region of the ITO conductive layer 12 coated with the sol layer 13, since the sol layer 13 material has a thermodynamically unstable property, and then cracks (as shown in fig. 4) begin to be generated at the interface layer of the conductive layer 12 and the sol layer 13 during the high temperature curing process and propagate through the conductive layer 12, the continuity structure of the conductive layer 12 is broken in this region, and thus is not conductive, as in the first functional principle of the embodiment; whereas the region where the sol layer 13 is not coated is cured to form a conductive film having a dense structure (as shown in fig. 3), and thus conductivity is not affected. The crack is steady-state, the process is irreversible, and the crack can not be repaired by high-temperature heating, so that the prepared film electrode has extremely high stability.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, the different embodiments or examples described in this specification and the features of the different embodiments or examples may be combined and combined by those skilled in the art without contradiction.
While embodiments of the present invention have been shown and described above, it will be understood that the above embodiments are illustrative and not to be construed as limiting the invention, and that variations, modifications, alternatives and variations may be made to the above embodiments by one of ordinary skill in the art within the scope of the invention.
Claims (9)
1. A thin film electrode, characterized by:
comprises a substrate layer;
an electrode layer is arranged on the surface of the substrate layer, and nano metal wires or ITO are distributed in the electrode layer; the electrode layer is divided into a conductive area and an insulating area, and the conductive areas are distributed according to a preset circuit;
wherein, in the electrode layer corresponding to the conductive area, the nano metal wires are connected with each other to form a whole; in the electrode layer corresponding to the insulating region, cracks exist between the nano metal wires so as to make the region non-conductive;
the preparation method of the film electrode comprises the following steps:
s1, preparing a conductive layer material: the conductive layer material comprises nano metal wires, a solvent and a dispersing agent;
s2, preparing a sol layer material: the sol layer material comprises one or more of zirconia sol, titania sol, zinc oxide sol and silica sol;
s3, coating the conductive layer material on the surface of the substrate layer, and forming a conductive layer by surface drying; coating the sol layer material on the surface of the conductive layer according to a preset pattern to form a sol layer;
s4, baking the substrate layer to enable the conductive layer and the sol layer to be solidified to form an electrode layer, so that a thin film electrode is obtained;
the steps S1 and S2 can be exchanged or performed simultaneously.
2. The membrane electrode assembly of claim 1 wherein:
the substrate layer comprises a flexible substrate layer or a rigid substrate layer;
the flexible substrate layer is made of PET, PEN or PI;
the rigid substrate layer is made of glass, PMMA or quartz plates;
the nano metal wire comprises a nano silver wire, a nano copper wire or a nano gold wire.
3. A method for producing a thin film electrode according to claim 1 or 2,
the method comprises the following steps:
s1, preparing a conductive layer material: the conductive layer material comprises nano metal wires, a solvent and a dispersing agent;
s2, preparing a sol layer material: the sol layer material comprises one or more of zirconia sol, titania sol, zinc oxide sol and silica sol;
s3, coating the conductive layer material on the surface of the substrate layer, and forming a conductive layer by surface drying; coating the sol layer material on the surface of the conductive layer according to a preset pattern to form a sol layer;
s4, baking the substrate layer to enable the conductive layer and the sol layer to be solidified to form an electrode layer, so that a thin film electrode is obtained;
the steps S1 and S2 can be exchanged or performed simultaneously.
4. The method for producing a thin film electrode according to claim 3,
the method also comprises the following steps:
s5, preparing a protective layer material;
the step S5 is arranged before the step S3, and the sequence of the steps S1, S2 and S5 can be arbitrarily exchanged or simultaneously carried out;
the protective layer material is coated on the outer surface of the sol layer, or
The protective layer material is coated between the conductive layer and the sol layer.
5. The method for preparing a thin film electrode according to claim 4, wherein:
the material of the protective layer comprises at least one of thermosetting resin and photo-curing resin;
the thermosetting resin comprises one or more of phenolic resin, epoxy resin, unsaturated polyester, amino resin, silicone resin, furan resin, polybutadiene resin and organic silicon resin;
the light-cured resin comprises one or more of epoxy acrylic resin, polyurethane acrylic resin, polyester acrylic resin, polyether acrylic resin, pure acrylic resin and vinyl resin.
6. The method for producing a thin film electrode according to claim 3 or 4,
the surface drying temperature is not more than 60 ℃;
the baking and curing temperature is 120-150 ℃.
7. The method for producing a thin film electrode according to claim 3,
the nano metal wire comprises a nano silver wire, a nano copper wire or a nano gold wire;
the solvent comprises one or more of alcohols, ethers, esters, ketones and hydrocarbons;
the dispersant comprises diammonium silver hydroxide, tetra ammonium copper hydroxide or imine gold complex.
8. The method for producing a thin film electrode according to claim 3,
the method for preparing the sol layer material in the step S2 comprises the following steps:
alkoxide, acid catalyst and alcohol are mixed according to the mass ratio of 1:0.1-0.5: 8-25, and stirring for 1-3 h to obtain a solution A;
deionized water, alcohol and inhibitor are mixed and stirred for 1 to 3 hours according to the mass ratio of 1:15 to 30:0.03 to 0.06 to obtain solution B;
and (3) dropwise adding the solution B into the solution A while continuously stirring, continuously stirring for 2-5 h after the dropwise adding, and finally aging the obtained solution at room temperature for 24-48h to obtain the sol layer material.
9. Use of a thin film electrode according to claim 1 or 2, characterized in that:
and the thin film electrode is used as an electrode of a touch screen, a solar cell, a liquid crystal handwriting board, an electronic curtain, a heating film or an LED display screen.
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