KR20100107582A - 단결정 성장장치용 석영 도가니 - Google Patents
단결정 성장장치용 석영 도가니 Download PDFInfo
- Publication number
- KR20100107582A KR20100107582A KR1020090025716A KR20090025716A KR20100107582A KR 20100107582 A KR20100107582 A KR 20100107582A KR 1020090025716 A KR1020090025716 A KR 1020090025716A KR 20090025716 A KR20090025716 A KR 20090025716A KR 20100107582 A KR20100107582 A KR 20100107582A
- Authority
- KR
- South Korea
- Prior art keywords
- quartz crucible
- single crystal
- thickness
- crucible
- bubble
- Prior art date
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Classifications
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B20/00—Processes specially adapted for the production of quartz or fused silica articles, not otherwise provided for
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
- C30B15/12—Double crucible methods
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
- Y02P40/57—Improving the yield, e-g- reduction of reject rates
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
Abstract
Description
Claims (3)
- 쵸크랄스키(Cz) 공정에 사용되는 단결정 성장장치용 석영 도가니에 있어서,3~10㎜ 두께의 버블 프리 영역(Bubble Free Region)을 갖는 투명한 내부층; 및상기 내부층을 둘러싸는 불투명한 외부층;을 포함하는 것을 특징으로 하는 단결정 성장장치용 석영 도가니.
- 제1항에 있어서,상기 버블 프리 영역의 두께가 도가니 두께의 50% 이내인 것을 특징으로 하는 단결정 성장장치용 석영 도가니.
- 제1항 또는 제2항에 있어서,멜트 라인(Melt Line)이 위치하는 지점의 버블 프리 영역의 두께가 다른 부분에 비해 상대적으로 더 두꺼운 것을 특징으로 하는 단결정 성장장치용 석영 도가니.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090025716A KR101089909B1 (ko) | 2009-03-26 | 2009-03-26 | 단결정 성장장치용 석영 도가니 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090025716A KR101089909B1 (ko) | 2009-03-26 | 2009-03-26 | 단결정 성장장치용 석영 도가니 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20100107582A true KR20100107582A (ko) | 2010-10-06 |
KR101089909B1 KR101089909B1 (ko) | 2011-12-05 |
Family
ID=43129258
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020090025716A KR101089909B1 (ko) | 2009-03-26 | 2009-03-26 | 단결정 성장장치용 석영 도가니 |
Country Status (1)
Country | Link |
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KR (1) | KR101089909B1 (ko) |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002326889A (ja) * | 2001-04-27 | 2002-11-12 | Toshiba Ceramics Co Ltd | シリコン単結晶引上げ用石英ガラスルツボ |
JP4716374B2 (ja) | 2006-09-28 | 2011-07-06 | コバレントマテリアル株式会社 | シリカガラスルツボ及びシリカガラスルツボの製造方法 |
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2009
- 2009-03-26 KR KR1020090025716A patent/KR101089909B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
KR101089909B1 (ko) | 2011-12-05 |
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