KR20080058406A - 인듐과 아연을 포함하는 산화물 반도체 재료를 구비하는채널을 갖는 전계 효과 트랜지스터 - Google Patents
인듐과 아연을 포함하는 산화물 반도체 재료를 구비하는채널을 갖는 전계 효과 트랜지스터 Download PDFInfo
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- KR20080058406A KR20080058406A KR1020087009155A KR20087009155A KR20080058406A KR 20080058406 A KR20080058406 A KR 20080058406A KR 1020087009155 A KR1020087009155 A KR 1020087009155A KR 20087009155 A KR20087009155 A KR 20087009155A KR 20080058406 A KR20080058406 A KR 20080058406A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 89
- 230000005669 field effect Effects 0.000 title claims abstract description 62
- 229910052725 zinc Inorganic materials 0.000 title claims abstract description 42
- 229910052738 indium Inorganic materials 0.000 title claims abstract description 41
- 239000000463 material Substances 0.000 title claims abstract description 25
- 239000011701 zinc Substances 0.000 title description 157
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 title 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 title 1
- 239000000203 mixture Substances 0.000 claims description 263
- 238000000034 method Methods 0.000 claims description 39
- 229910052733 gallium Inorganic materials 0.000 claims description 17
- 229910052727 yttrium Inorganic materials 0.000 claims description 2
- 239000010408 film Substances 0.000 description 165
- 229910007541 Zn O Inorganic materials 0.000 description 105
- 229910052760 oxygen Inorganic materials 0.000 description 64
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 63
- 239000001301 oxygen Substances 0.000 description 63
- 108091006146 Channels Proteins 0.000 description 60
- 239000010409 thin film Substances 0.000 description 38
- 230000008859 change Effects 0.000 description 33
- 230000015572 biosynthetic process Effects 0.000 description 27
- 239000000758 substrate Substances 0.000 description 24
- 238000011156 evaluation Methods 0.000 description 16
- 238000010587 phase diagram Methods 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 10
- 238000012546 transfer Methods 0.000 description 10
- 108091006149 Electron carriers Proteins 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 230000003595 spectral effect Effects 0.000 description 9
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 8
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 8
- 238000002441 X-ray diffraction Methods 0.000 description 8
- 230000007423 decrease Effects 0.000 description 8
- 238000005259 measurement Methods 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 8
- 230000008901 benefit Effects 0.000 description 7
- 239000000523 sample Substances 0.000 description 7
- 206010021143 Hypoxia Diseases 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000004876 x-ray fluorescence Methods 0.000 description 6
- 230000000704 physical effect Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000001747 exhibiting effect Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000000572 ellipsometry Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910007604 Zn—Sn—O Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Dram (AREA)
Abstract
Description
Claims (9)
- In과 Zn을 포함하는 산화물 반도체 재료로 이루어진 채널을 구비하는 전계 효과 트랜지스터로서,In/(In+Zn)으로 표현되는 원자 조성 비율은 35 원자% 이상 55 원자% 이하이며,상기 산화물 반도체 재료에는 Ga이 포함되어 있지 않고, 혹은 Ga이 포함되어 있는 경우에는, Ga/(In+Zn+Ga)로 표현되는 원자 조성 비율은 30 원자% 이하인 전계 효과 트랜지스터.
- 제1항에 있어서,Ga/(In+Zn+Ga)로 표현되는 상기 원자 조성 비율은 15 원자% 이하인 전계 효과 트랜지스터.
- 제1항에 있어서,Ga/(In+Zn+Ga)로 표현되는 상기 원자 조성 비율은 5 원자% 이하인 전계 효과 트랜지스터.
- 제1항에 있어서,Ga/(In+Zn+Ga)로 표현되는 상기 원자 조성 비율은 5 원자% 이상 15 원자% 이 하인 전계 효과 트랜지스터.
- 제1항에 있어서,In/(In+Zn)으로 표현되는 상기 원자 조성 비율은 40 원자% 이상인 전계 효과 트랜지스터.
- 제1항에 있어서,In/(In+Zn)으로 표현되는 상기 원자 조성 비율은 50 원자% 이하인 전계 효과 트랜지스터.
- 제8항에 있어서,Sn/(Sn+In+Zn)으로 표현되는 원자 조성 비율은 0.1 원자% 이상 20 원자% 이하인 전계 효과 트랜지스터.
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2005-00271118 | 2005-09-16 | ||
JP2005271118 | 2005-09-16 | ||
JP2006075054 | 2006-03-17 | ||
JPJP-P-2006-00075054 | 2006-03-17 | ||
JP2006224309A JP5006598B2 (ja) | 2005-09-16 | 2006-08-21 | 電界効果型トランジスタ |
JPJP-P-2006-00224309 | 2006-08-21 |
Publications (2)
Publication Number | Publication Date |
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KR20080058406A true KR20080058406A (ko) | 2008-06-25 |
KR100973124B1 KR100973124B1 (ko) | 2010-07-29 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020087009155A KR100973124B1 (ko) | 2005-09-16 | 2006-09-05 | 인듐과 아연을 포함하는 산화물 반도체 재료를 구비하는채널을 갖는 전계 효과 트랜지스터 |
Country Status (8)
Country | Link |
---|---|
US (2) | US20090189153A1 (ko) |
EP (3) | EP2149910B1 (ko) |
JP (1) | JP5006598B2 (ko) |
KR (1) | KR100973124B1 (ko) |
CN (2) | CN104659105B (ko) |
BR (1) | BRPI0615942A2 (ko) |
TW (1) | TWI323926B (ko) |
WO (1) | WO2007032294A1 (ko) |
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KR20150018414A (ko) * | 2013-08-09 | 2015-02-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
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US11201248B2 (en) | 2017-06-27 | 2021-12-14 | Lg Display Co., Ltd. | Thin-film transistor including oxide semiconductor layer, method of manufacturing the same, and display apparatus including the same |
KR20190069058A (ko) * | 2017-12-11 | 2019-06-19 | 엘지디스플레이 주식회사 | 박막 트랜지스터, 그의 제조방법, 및 그를 포함한 표시장치 |
KR20220131881A (ko) * | 2017-12-11 | 2022-09-29 | 엘지디스플레이 주식회사 | 박막 트랜지스터, 그의 제조방법, 및 그를 포함한 표시장치 |
Also Published As
Publication number | Publication date |
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EP2149910A3 (en) | 2012-07-25 |
WO2007032294A1 (en) | 2007-03-22 |
CN104659105B (zh) | 2018-11-23 |
CN101263605B (zh) | 2014-08-06 |
JP5006598B2 (ja) | 2012-08-22 |
TW200731465A (en) | 2007-08-16 |
BRPI0615942A2 (pt) | 2012-12-18 |
EP2149911A3 (en) | 2012-07-25 |
US20140070211A1 (en) | 2014-03-13 |
EP2149910A2 (en) | 2010-02-03 |
JP2007281409A (ja) | 2007-10-25 |
TWI323926B (en) | 2010-04-21 |
EP2149910B1 (en) | 2019-04-10 |
KR100973124B1 (ko) | 2010-07-29 |
CN104659105A (zh) | 2015-05-27 |
US20090189153A1 (en) | 2009-07-30 |
EP1925034A1 (en) | 2008-05-28 |
CN101263605A (zh) | 2008-09-10 |
EP2149911A2 (en) | 2010-02-03 |
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