KR20080023119A - 반도체 웨이퍼용 알칼리 에칭액 및 알칼리 에칭 방법 - Google Patents
반도체 웨이퍼용 알칼리 에칭액 및 알칼리 에칭 방법 Download PDFInfo
- Publication number
- KR20080023119A KR20080023119A KR1020070086054A KR20070086054A KR20080023119A KR 20080023119 A KR20080023119 A KR 20080023119A KR 1020070086054 A KR1020070086054 A KR 1020070086054A KR 20070086054 A KR20070086054 A KR 20070086054A KR 20080023119 A KR20080023119 A KR 20080023119A
- Authority
- KR
- South Korea
- Prior art keywords
- wafer
- etching
- silicon
- solution
- alkaline
- Prior art date
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- 238000005530 etching Methods 0.000 title claims abstract description 222
- 238000000034 method Methods 0.000 title claims abstract description 41
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 239000010703 silicon Substances 0.000 claims abstract description 133
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 133
- 239000000243 solution Substances 0.000 claims abstract description 116
- 230000003746 surface roughness Effects 0.000 claims abstract description 72
- SXDBWCPKPHAZSM-UHFFFAOYSA-M bromate Inorganic materials [O-]Br(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-M 0.000 claims abstract description 44
- SXDBWCPKPHAZSM-UHFFFAOYSA-N bromic acid Chemical compound OBr(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-N 0.000 claims abstract description 44
- 239000007864 aqueous solution Substances 0.000 claims abstract description 15
- 239000003518 caustics Substances 0.000 claims abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 131
- 239000003513 alkali Substances 0.000 claims description 92
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical group [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 claims description 50
- 239000007788 liquid Substances 0.000 claims description 35
- 239000004317 sodium nitrate Substances 0.000 claims description 25
- 235000010344 sodium nitrate Nutrition 0.000 claims description 25
- 229910002651 NO3 Inorganic materials 0.000 claims description 20
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 239000012670 alkaline solution Substances 0.000 claims description 10
- XUXNAKZDHHEHPC-UHFFFAOYSA-M sodium bromate Chemical group [Na+].[O-]Br(=O)=O XUXNAKZDHHEHPC-UHFFFAOYSA-M 0.000 claims description 10
- 235000012431 wafers Nutrition 0.000 description 185
- JHJLBTNAGRQEKS-UHFFFAOYSA-M sodium bromide Chemical compound [Na+].[Br-] JHJLBTNAGRQEKS-UHFFFAOYSA-M 0.000 description 52
- 238000010998 test method Methods 0.000 description 24
- 238000004090 dissolution Methods 0.000 description 23
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 21
- 230000000052 comparative effect Effects 0.000 description 18
- 230000000694 effects Effects 0.000 description 13
- 238000001000 micrograph Methods 0.000 description 11
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 239000002253 acid Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910001854 alkali hydroxide Inorganic materials 0.000 description 2
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- AMXOYNBUYSYVKV-UHFFFAOYSA-M lithium bromide Chemical compound [Li+].[Br-] AMXOYNBUYSYVKV-UHFFFAOYSA-M 0.000 description 2
- IIPYXGDZVMZOAP-UHFFFAOYSA-N lithium nitrate Chemical compound [Li+].[O-][N+]([O-])=O IIPYXGDZVMZOAP-UHFFFAOYSA-N 0.000 description 2
- IOLCXVTUBQKXJR-UHFFFAOYSA-M potassium bromide Chemical compound [K+].[Br-] IOLCXVTUBQKXJR-UHFFFAOYSA-M 0.000 description 2
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000004323 potassium nitrate Substances 0.000 description 1
- 235000010333 potassium nitrate Nutrition 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000004448 titration Methods 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B11/00—Oxides or oxyacids of halogens; Salts thereof
- C01B11/20—Oxygen compounds of bromine
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3063—Electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02019—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30608—Anisotropic liquid etching
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Weting (AREA)
- ing And Chemical Polishing (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (9)
- 알칼리 수용액에 브롬산염이 함유되어 있는 것인 알칼리 에칭액.
- 알칼리 수용액에 브롬산염 및 질산염이 함유되어 있는 것인 알칼리 에칭액.
- 제1항 또는 제2항에 있어서, 상기 브롬산염은 브롬산나트륨인 것인 알칼리 에칭액.
- 제2항에 있어서, 상기 질산염은 질산나트륨인 것인 알칼리 에칭액.
- 알칼리 용액에 의한 실리콘 웨이퍼 에칭 방법으로서,상기 알칼리 용액은 브롬산염을 함유하는 가성(苛性) 알칼리 수용액인 것인 실리콘 웨이퍼 에칭 방법.
- 알칼리 용액에 의한 실리콘 웨이퍼 에칭 방법으로서,상기 알칼리 용액은 브롬산염 및 질산염을 함유하는 가성 알칼리 수용액인 것인 실리콘 웨이퍼 에칭 방법.
- 제5항 또는 제6항에 있어서, 상기 브롬산염은 브롬산나트륨인 것인 실리콘 웨이퍼 에칭 방법.
- 제6항에 있어서, 상기 질산염은 질산나트륨인 것인 실리콘 웨이퍼 에칭 방법.
- 브롬산염을 함유하는 가성 알칼리 수용액을 사용하여 알칼리 에칭을 수행하는 단계를 포함하고,에칭 처리후의 웨이퍼는 0.27 ㎛ 이하의 표면 조도(粗度)(Ra)를 갖는 것인 반도체 실리콘 웨이퍼 제조 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2006-00243350 | 2006-09-07 | ||
JP2006243350A JP5017709B2 (ja) | 2006-09-07 | 2006-09-07 | シリコンウェーハのエッチング方法および半導体シリコンウェーハの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20080023119A true KR20080023119A (ko) | 2008-03-12 |
KR100983064B1 KR100983064B1 (ko) | 2010-09-20 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020070086054A KR100983064B1 (ko) | 2006-09-07 | 2007-08-27 | 반도체 웨이퍼용 알칼리 에칭액 및 알칼리 에칭 방법 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7780868B2 (ko) |
EP (1) | EP1898454B1 (ko) |
JP (1) | JP5017709B2 (ko) |
KR (1) | KR100983064B1 (ko) |
CN (1) | CN101158052B (ko) |
DE (1) | DE602007004154D1 (ko) |
SG (1) | SG140530A1 (ko) |
TW (1) | TWI354695B (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101275384B1 (ko) * | 2009-11-02 | 2013-06-14 | 실트로닉 아게 | 실리콘 웨이퍼 처리 방법 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110020966A1 (en) * | 2009-07-23 | 2011-01-27 | Canon Kabushiki Kaisha | Method for processing silicon substrate and method for producing substrate for liquid ejecting head |
CN102154710B (zh) * | 2010-12-09 | 2013-09-11 | 扬州瀚源新材料科技有限公司 | 单晶硅片植绒工艺液及其制备方法 |
CN103603054A (zh) * | 2013-10-15 | 2014-02-26 | 电子科技大学 | 一种制备钽酸锂晶片的方法 |
CN103773374B (zh) * | 2014-01-26 | 2015-03-11 | 内蒙古日月太阳能科技有限责任公司 | 碱性腐蚀液及腐蚀多晶硅片的方法 |
CN111211049B (zh) * | 2018-11-21 | 2022-10-21 | 浙江海晫新能源科技有限公司 | 一种硅片碱腐蚀工艺及其应用 |
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US1923618A (en) * | 1932-07-30 | 1933-08-22 | Philip H Groggins | Preparation of amino derivatives of the anthraquinone series |
GB1278499A (en) * | 1968-10-17 | 1972-06-21 | Texas Instruments Inc | Improved process for polishing oxidizable surfaces |
FR2374396A1 (fr) * | 1976-12-17 | 1978-07-13 | Ibm | Composition de decapage du silicium |
KR0154252B1 (ko) | 1994-03-31 | 1998-12-01 | 아베 아끼라 | 에칭제 및 전자소자와 그의 제조방법 |
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JP4094110B2 (ja) * | 1998-04-14 | 2008-06-04 | エルジー.フィリップス エルシーデー カンパニー,リミテッド | エッチング剤 |
JP4306827B2 (ja) * | 1998-04-14 | 2009-08-05 | エルジー ディスプレイ カンパニー リミテッド | エッチング剤 |
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JP3765970B2 (ja) * | 2000-07-12 | 2006-04-12 | ソニーケミカル株式会社 | エッチング液及びフレキシブル配線板の製造方法 |
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DE10241300A1 (de) * | 2002-09-04 | 2004-03-18 | Merck Patent Gmbh | Ätzpasten für Siliziumoberflächen und -schichten |
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2006
- 2006-09-07 JP JP2006243350A patent/JP5017709B2/ja active Active
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2007
- 2007-07-25 SG SG200705460-4A patent/SG140530A1/en unknown
- 2007-08-17 CN CN2007101416546A patent/CN101158052B/zh active Active
- 2007-08-22 DE DE602007004154T patent/DE602007004154D1/de active Active
- 2007-08-22 EP EP07016454A patent/EP1898454B1/en active Active
- 2007-08-22 TW TW096131025A patent/TWI354695B/zh active
- 2007-08-27 KR KR1020070086054A patent/KR100983064B1/ko active IP Right Grant
- 2007-09-05 US US11/899,182 patent/US7780868B2/en active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101275384B1 (ko) * | 2009-11-02 | 2013-06-14 | 실트로닉 아게 | 실리콘 웨이퍼 처리 방법 |
Also Published As
Publication number | Publication date |
---|---|
EP1898454A3 (en) | 2008-06-04 |
CN101158052B (zh) | 2010-09-29 |
US20080064222A1 (en) | 2008-03-13 |
DE602007004154D1 (de) | 2010-02-25 |
KR100983064B1 (ko) | 2010-09-20 |
US7780868B2 (en) | 2010-08-24 |
TWI354695B (en) | 2011-12-21 |
SG140530A1 (en) | 2008-03-28 |
EP1898454B1 (en) | 2010-01-06 |
JP2008066538A (ja) | 2008-03-21 |
CN101158052A (zh) | 2008-04-09 |
EP1898454A2 (en) | 2008-03-12 |
JP5017709B2 (ja) | 2012-09-05 |
TW200813194A (en) | 2008-03-16 |
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