FR2374396A1 - Composition de decapage du silicium - Google Patents

Composition de decapage du silicium

Info

Publication number
FR2374396A1
FR2374396A1 FR7733078A FR7733078A FR2374396A1 FR 2374396 A1 FR2374396 A1 FR 2374396A1 FR 7733078 A FR7733078 A FR 7733078A FR 7733078 A FR7733078 A FR 7733078A FR 2374396 A1 FR2374396 A1 FR 2374396A1
Authority
FR
France
Prior art keywords
pickling composition
silicon
composition
silicon pickling
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7733078A
Other languages
English (en)
Other versions
FR2374396B1 (fr
Inventor
Cheng-Yih Liu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2374396A1 publication Critical patent/FR2374396A1/fr
Application granted granted Critical
Publication of FR2374396B1 publication Critical patent/FR2374396B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Surface Treatment Of Glass (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Detergent Compositions (AREA)

Abstract

Composition de décapage du silicium. Cette composition comprend des ions fluorure et des atomes d'oxygène dans une solution aqueuse dont le pH est compris entre 6 et 8,2. Application à la fabrication des dispositifs à semi-conducteurs.
FR7733078A 1976-12-17 1977-10-24 Composition de decapage du silicium Granted FR2374396A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US75161976A 1976-12-17 1976-12-17

Publications (2)

Publication Number Publication Date
FR2374396A1 true FR2374396A1 (fr) 1978-07-13
FR2374396B1 FR2374396B1 (fr) 1980-08-08

Family

ID=25022795

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7733078A Granted FR2374396A1 (fr) 1976-12-17 1977-10-24 Composition de decapage du silicium

Country Status (4)

Country Link
JP (1) JPS5376139A (fr)
DE (1) DE2752482A1 (fr)
FR (1) FR2374396A1 (fr)
GB (1) GB1588843A (fr)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0019468A1 (fr) * 1979-05-18 1980-11-26 Fujitsu Limited Procédé de traitement superficiel d'un substrat semiconducteur
EP0032174B1 (fr) * 1979-12-20 1984-07-25 Ibm Deutschland Gmbh Procédé de dopage de corps de silicium par diffusion de bore et application de ce procédé pour la fabrication des zônes de base de transistors bipolaires
EP0140347A2 (fr) * 1983-10-28 1985-05-08 Union Carbide Corporation Solution fluorescente de fluorure corrosif
EP0278628A2 (fr) * 1987-01-27 1988-08-17 Olin Corporation Solutions d'attaque chimique de surfaces contenant du fluorure d'ammonium
EP0499488A2 (fr) * 1991-02-15 1992-08-19 Canon Kabushiki Kaisha Solution d'attaque pour attaquer le silicium poreux, méthode d'attaque utilisant ladite solution, et procédé de préparation d'un composant semi-conducteur utilisant ladite solution
EP0534474A2 (fr) * 1991-09-27 1993-03-31 Canon Kabushiki Kaisha Substrat de silicon et son procédé de fabrication
US6171512B1 (en) 1991-02-15 2001-01-09 Canon Kabushiki Kaisha Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6022521U (ja) * 1983-07-19 1985-02-16 横浜ゴム株式会社 防舷装置
WO2006054996A1 (fr) * 2004-11-19 2006-05-26 Honeywell International Inc. Produits chimiques pour enlèvement sélectif pour applications semi-conductrices, procédés de fabrication et utilisations idoines
JP5017709B2 (ja) * 2006-09-07 2012-09-05 ジルトロニック アクチエンゲゼルシャフト シリコンウェーハのエッチング方法および半導体シリコンウェーハの製造方法
JP6941959B2 (ja) 2017-03-31 2021-09-29 関東化学株式会社 エッチング液組成物およびエッチング方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2847287A (en) * 1956-07-20 1958-08-12 Bell Telephone Labor Inc Etching processes and solutions
DE1080697B (de) * 1957-08-07 1960-04-28 Western Electric Co Verfahren zur Herstellung von Halbleiterkoerpern einer Halbleiteranordnung
FR1266612A (fr) * 1960-06-02 1961-07-17 Solutions d'attaque chimiques pour le traitement en surface des matériaux semiconducteurs
US3158517A (en) * 1959-11-05 1964-11-24 Telefunken Gmbh Process for forming recesses in semiconductor bodies
US3773578A (en) * 1970-12-01 1973-11-20 Us Army Method of continuously etching a silicon substrate

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50341A (fr) * 1973-05-07 1975-01-06
JPS509268A (fr) * 1973-05-30 1975-01-30

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2847287A (en) * 1956-07-20 1958-08-12 Bell Telephone Labor Inc Etching processes and solutions
DE1080697B (de) * 1957-08-07 1960-04-28 Western Electric Co Verfahren zur Herstellung von Halbleiterkoerpern einer Halbleiteranordnung
US3158517A (en) * 1959-11-05 1964-11-24 Telefunken Gmbh Process for forming recesses in semiconductor bodies
FR1266612A (fr) * 1960-06-02 1961-07-17 Solutions d'attaque chimiques pour le traitement en surface des matériaux semiconducteurs
US3773578A (en) * 1970-12-01 1973-11-20 Us Army Method of continuously etching a silicon substrate

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0019468A1 (fr) * 1979-05-18 1980-11-26 Fujitsu Limited Procédé de traitement superficiel d'un substrat semiconducteur
EP0032174B1 (fr) * 1979-12-20 1984-07-25 Ibm Deutschland Gmbh Procédé de dopage de corps de silicium par diffusion de bore et application de ce procédé pour la fabrication des zônes de base de transistors bipolaires
EP0140347A2 (fr) * 1983-10-28 1985-05-08 Union Carbide Corporation Solution fluorescente de fluorure corrosif
EP0140347A3 (en) * 1983-10-28 1986-06-25 Union Carbide Corporation Fluorescent corrosive fluoride solution
EP0278628A2 (fr) * 1987-01-27 1988-08-17 Olin Corporation Solutions d'attaque chimique de surfaces contenant du fluorure d'ammonium
EP0278628A3 (en) * 1987-01-27 1989-03-22 Olin Corporation Etching solutions containing ammonium fluoride
EP0499488A2 (fr) * 1991-02-15 1992-08-19 Canon Kabushiki Kaisha Solution d'attaque pour attaquer le silicium poreux, méthode d'attaque utilisant ladite solution, et procédé de préparation d'un composant semi-conducteur utilisant ladite solution
EP0499488A3 (fr) * 1991-02-15 1995-03-01 Canon Kk
US5767020A (en) * 1991-02-15 1998-06-16 Canon Kabushiki Kaisha Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution
US6171512B1 (en) 1991-02-15 2001-01-09 Canon Kabushiki Kaisha Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution
US6238586B1 (en) 1991-02-15 2001-05-29 Canon Kabushiki Kaisha Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution
US6254794B1 (en) 1991-02-15 2001-07-03 Canon Kabushiki Kaisha Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution
EP0534474A2 (fr) * 1991-09-27 1993-03-31 Canon Kabushiki Kaisha Substrat de silicon et son procédé de fabrication
EP0534474A3 (en) * 1991-09-27 1993-04-21 Canon Kabushiki Kaisha Si substrate and method of processing the same

Also Published As

Publication number Publication date
GB1588843A (en) 1981-04-29
FR2374396B1 (fr) 1980-08-08
JPS5376139A (en) 1978-07-06
JPS5550112B2 (fr) 1980-12-16
DE2752482A1 (de) 1978-06-22

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