KR20080012399A - 반도체 장치 - Google Patents
반도체 장치 Download PDFInfo
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- KR20080012399A KR20080012399A KR1020080006133A KR20080006133A KR20080012399A KR 20080012399 A KR20080012399 A KR 20080012399A KR 1020080006133 A KR1020080006133 A KR 1020080006133A KR 20080006133 A KR20080006133 A KR 20080006133A KR 20080012399 A KR20080012399 A KR 20080012399A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 210000000746 body region Anatomy 0.000 claims abstract description 9
- 239000000969 carrier Substances 0.000 claims abstract 2
- 230000003071 parasitic effect Effects 0.000 abstract description 32
- 238000009826 distribution Methods 0.000 description 38
- 238000000926 separation method Methods 0.000 description 14
- 230000000694 effects Effects 0.000 description 8
- 230000005684 electric field Effects 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 230000006872 improvement Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7394—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET on an insulating layer or substrate, e.g. thin film device or device isolated from the bulk substrate
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
- B29K2105/00—Condition, form or state of moulded material or of the material to be shaped
- B29K2105/26—Scrap or recycled material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02W—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO WASTEWATER TREATMENT OR WASTE MANAGEMENT
- Y02W30/00—Technologies for solid waste management
- Y02W30/50—Reuse, recycling or recovery technologies
- Y02W30/62—Plastics recycling; Rubber recycling
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Element Separation (AREA)
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (4)
- 제1도전형의 반도체기판과,상기 반도체기판에 설치된 제2도전형의 반도체영역과,상기 반도체영역 안에 설치된 제1도전형의 콜렉터층과,상기 반도체영역 안에, 상기 콜렉터층으로부터 간격을 두고 설치된 제1도전형의 베이스층과,상기 베이스층 안에 설치된, 제2도전형의 제1이미터층을 포함하고, 상기 제1이미터층과 상기 콜렉터층 사이의 캐리어의 이동을, 상기 베이스층에 형성되는 채널 영역에서 제어하는 횡형의 반도체장치로서,상기 제1이미터층이, 무단 형상의 본체영역과 상기 본체영역으로부터 바깥쪽으로 돌출한 볼록부 영역으로 이루어지고, 인접한 2개의 상기 볼록부 영역의 간격(W1)이, 상기 볼록부 영역의 폭(W2)보다 크며(W1>W2), 상기 볼록부 영역에 있어서 이미터 전극과 접속된 것을 특징으로 하는 반도체장치.
- 반도체기판과,상기 반도체기판에 설치된 제2도전형의 반도체영역과,상기 반도체영역 안에 설치된 제1도전형의 콜렉터층과,상기 반도체영역 안에, 상기 콜렉터층으로부터 간격을 두고 상기 콜렉터층을 둘러싸도록 설치된 무단 형상의 제1도전형의 베이스층과,상기 베이스층 안에 설치된, 무단 형상의 제2도전형의 제1이미터층을 포함하고, 상기 제1이미터층과 상기 콜렉터층 사이의 캐리어의 이동을, 상기 베이스층에 형성되는 채널 영역에서 제어하는 횡형의 반도체장치로서,상기 반도체기판과 상기 반도체영역과의 사이에 절연막이 더 설치되고,상기 제1이미터층이, 무단 형상의 본체영역과 상기 본체영역으로부터 바깥쪽으로 돌출한 볼록부 영역으로 이루어지고, 인접한 2개의 상기 볼록부 영역의 간격(W1)이, 상기 볼록부 영역의 폭(W2)보다 크며(W1>W2), 상기 볼록부 영역에 있어서 이미터 전극과 접속된 것을 특징으로 하는 반도체장치.
- 제 1항 또는 제 2항에 있어서,상기 볼록부 영역의 단부에, 상기 본체영역의 접선방향으로 연장한 단부영역을 포함하고, 상기 단부영역이 상기 이미터 전극과 접속된 것을 특징으로 하는 반도체장치.
- 제 1항 또는 제 2항에 있어서,상기 베이스층 안에, 상기 제1이미터층을 둘러싸도록, 제1도전형의 제2이미터층이 설치된 것을 특징으로 하는 반도체장치.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005367544 | 2005-12-21 | ||
JPJP-P-2005-00367544 | 2005-12-21 | ||
JP2006098740A JP2007194575A (ja) | 2005-12-21 | 2006-03-31 | 半導体装置 |
JPJP-P-2006-00098740 | 2006-03-31 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020060126885A Division KR100879036B1 (ko) | 2005-12-21 | 2006-12-13 | 반도체 장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20080012399A true KR20080012399A (ko) | 2008-02-11 |
KR100879037B1 KR100879037B1 (ko) | 2009-01-15 |
Family
ID=38135967
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020060126885A KR100879036B1 (ko) | 2005-12-21 | 2006-12-13 | 반도체 장치 |
KR1020080006132A KR100898775B1 (ko) | 2005-12-21 | 2008-01-21 | 반도체 장치 |
KR1020080006133A KR100879037B1 (ko) | 2005-12-21 | 2008-01-21 | 반도체 장치 |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020060126885A KR100879036B1 (ko) | 2005-12-21 | 2006-12-13 | 반도체 장치 |
KR1020080006132A KR100898775B1 (ko) | 2005-12-21 | 2008-01-21 | 반도체 장치 |
Country Status (6)
Country | Link |
---|---|
US (3) | US7829955B2 (ko) |
JP (1) | JP2007194575A (ko) |
KR (3) | KR100879036B1 (ko) |
CN (2) | CN101685819B (ko) |
DE (1) | DE102006058228B4 (ko) |
TW (2) | TWI344698B (ko) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5124533B2 (ja) * | 2009-06-30 | 2013-01-23 | 株式会社日立製作所 | 半導体装置、それを用いたプラズマディスプレイ駆動用半導体集積回路装置、及びプラズマディスプレイ装置 |
JP2011049393A (ja) * | 2009-08-27 | 2011-03-10 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
KR101715762B1 (ko) * | 2010-08-11 | 2017-03-14 | 삼성전자주식회사 | 반도체 소자 |
TWI424564B (zh) * | 2011-01-13 | 2014-01-21 | Anpec Electronics Corp | Insulator gate with high operational response speed |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4963951A (en) * | 1985-11-29 | 1990-10-16 | General Electric Company | Lateral insulated gate bipolar transistors with improved latch-up immunity |
JPH02312280A (ja) | 1989-05-26 | 1990-12-27 | Mitsubishi Electric Corp | 絶縁ゲート型バイポーラトランジスタ |
JP2877408B2 (ja) * | 1990-01-12 | 1999-03-31 | 株式会社東芝 | 導電変調型mosfet |
JPH08227999A (ja) * | 1994-12-21 | 1996-09-03 | Mitsubishi Electric Corp | 絶縁ゲート型バイポーラトランジスタ及びその製造方法並びに半導体集積回路及びその製造方法 |
JPH09120995A (ja) | 1995-08-22 | 1997-05-06 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US5731603A (en) | 1995-08-24 | 1998-03-24 | Kabushiki Kaisha Toshiba | Lateral IGBT |
US6064086A (en) | 1995-08-24 | 2000-05-16 | Kabushiki Kaisha Toshiba | Semiconductor device having lateral IGBT |
JPH11266018A (ja) | 1998-03-16 | 1999-09-28 | Toshiba Corp | 半導体装置 |
JP3444061B2 (ja) | 1995-11-24 | 2003-09-08 | 富士電機株式会社 | 高耐圧横型絶縁ゲートバイポーラトランジスタ |
KR100194668B1 (ko) * | 1995-12-05 | 1999-07-01 | 윤종용 | 전력용 절연 게이트 바이폴라 트랜지스터 |
US5869850A (en) * | 1996-12-13 | 1999-02-09 | Kabushiki Kaishia Toshiba | Lateral insulated gate bipolar transistor |
JP3497716B2 (ja) * | 1996-12-13 | 2004-02-16 | 株式会社東芝 | 横型絶縁ゲートバイポーラトランジスタ |
JPH10242456A (ja) * | 1997-02-28 | 1998-09-11 | Toshiba Corp | 横型絶縁ゲートバイポーラトランジスタ |
JPH10335655A (ja) | 1997-06-03 | 1998-12-18 | Nissan Motor Co Ltd | 横型絶縁ゲート型バイポーラトランジスタ |
DE19828669C2 (de) | 1998-06-26 | 2003-08-21 | Infineon Technologies Ag | Lateraler IGBT in SOI-Bauweise und Verfahren zur Herstellung |
JP2000286416A (ja) | 1999-03-30 | 2000-10-13 | Mitsubishi Electric Corp | マルチチャネル絶縁ゲート型バイポーラトランジスタ |
US6191453B1 (en) * | 1999-12-13 | 2001-02-20 | Philips Electronics North America Corporation | Lateral insulated-gate bipolar transistor (LIGBT) device in silicon-on-insulator (SOI) technology |
JP4357127B2 (ja) * | 2000-03-03 | 2009-11-04 | 株式会社東芝 | 半導体装置 |
JP3647802B2 (ja) | 2001-01-25 | 2005-05-18 | 株式会社東芝 | 横型半導体装置 |
JP2002270844A (ja) | 2001-03-07 | 2002-09-20 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2005093696A (ja) * | 2003-09-17 | 2005-04-07 | Matsushita Electric Ind Co Ltd | 横型mosトランジスタ |
JP2007207862A (ja) | 2006-01-31 | 2007-08-16 | Mitsubishi Electric Corp | 半導体装置 |
-
2006
- 2006-03-31 JP JP2006098740A patent/JP2007194575A/ja active Pending
- 2006-10-31 US US11/554,659 patent/US7829955B2/en not_active Expired - Fee Related
- 2006-11-06 TW TW095140971A patent/TWI344698B/zh not_active IP Right Cessation
- 2006-11-06 TW TW099104644A patent/TW201029178A/zh unknown
- 2006-12-11 DE DE102006058228A patent/DE102006058228B4/de not_active Expired - Fee Related
- 2006-12-13 CN CN2009102049539A patent/CN101685819B/zh not_active Expired - Fee Related
- 2006-12-13 KR KR1020060126885A patent/KR100879036B1/ko active IP Right Grant
- 2006-12-13 CN CN2010102085824A patent/CN101882618B/zh not_active Expired - Fee Related
-
2008
- 2008-01-21 KR KR1020080006132A patent/KR100898775B1/ko active IP Right Grant
- 2008-01-21 KR KR1020080006133A patent/KR100879037B1/ko active IP Right Grant
-
2010
- 2010-09-28 US US12/891,842 patent/US8421157B2/en active Active
-
2013
- 2013-03-07 US US13/789,012 patent/US20130248926A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
DE102006058228B4 (de) | 2013-11-28 |
CN101882618A (zh) | 2010-11-10 |
KR100898775B1 (ko) | 2009-05-20 |
US20130248926A1 (en) | 2013-09-26 |
KR20070067618A (ko) | 2007-06-28 |
US7829955B2 (en) | 2010-11-09 |
US20070138569A1 (en) | 2007-06-21 |
DE102006058228A1 (de) | 2007-07-05 |
JP2007194575A (ja) | 2007-08-02 |
TW200733381A (en) | 2007-09-01 |
TW201029178A (en) | 2010-08-01 |
KR100879037B1 (ko) | 2009-01-15 |
US20110018028A1 (en) | 2011-01-27 |
TWI344698B (en) | 2011-07-01 |
US8421157B2 (en) | 2013-04-16 |
KR20080012398A (ko) | 2008-02-11 |
CN101882618B (zh) | 2012-05-30 |
CN101685819B (zh) | 2012-02-29 |
KR100879036B1 (ko) | 2009-01-15 |
CN101685819A (zh) | 2010-03-31 |
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