KR20060090603A - 경질피막, 경질피막 형성용 타겟, 및 경질피막의 제조방법 - Google Patents
경질피막, 경질피막 형성용 타겟, 및 경질피막의 제조방법 Download PDFInfo
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Abstract
Description
Claims (24)
- 하기 화학식 1을 포함하는 경질피막.화학식 1(Al1 - aVa)(C1 - xNx)상기 식에서,0.27≤a≤0.75이고,0.3≤X≤1이고,이때, a 및 X는 독립적으로 원자비이다.
- 하기 화학식 2를 포함하는 경질피막.화학식 2(Al1 -a-b- cVaSibBc)(C1 - xNx)상기 식에서,0.1≤a≤0.75이고,0 < b+c≤0.20이고,0.3≤X≤1이고,이때, a, b, c 및 X는 독립적으로 원자비이되, b 및 c가 동시에는 0이 아니고, b 및 c중 하나는 0일 수 있다.
- Al, V, Si 및 B로부터 선택된 하나 이상의 원소의 질화물 또는 탄질화물을 포함하는 박층을 반복적으로 침착함으로써 제조되되, 이때 주기는 80nm 이하이고 평균 조성은 제 1 항 또는 제 2 항의 조성을 만족하는 다층 경질피막.
- (1) TiAl의 질화물 또는 탄질화물을 포함하는 박층 및/또는 CrAl의 질화물 또는 탄질화물을 포함하는 박층, 및 (2) 제 1 항 또는 제 2 항의 조성을 만족시키는 평균 조성을 갖는 박층을 반복적으로 침착시킴으로써 제조되되, 이때 주기는 80nm 이하인 다층 경질피막.
- 제 1 항 또는 제 2 항에 있어서,NaCl-형 결정 구조를 갖는 경질피막.
- 제 1 항 또는 제 2 항에 따른 다수의 경질피막을 포함하되, 각 경질피막 층이 그의 인접한 경질피막 층들과 상이한 라미네이트 경질피막.
- 제 1 항 또는 제 2 항에 따른 경질피막의 하나 이상의 면 위에 (1) NaCl-형 결정 구조를 갖는 금속 질화물, 금속 탄화물 또는 금속 탄질화물을 포함하는, 제 1 항 또는 제 2 항의 경질피막과 상이한 경질피막, 또는 (2) 주기율표 4A, 5A 및 6A족의 원소, Al 및 Si, 및 그의 합금으로부터 선택된 하나 이상의 금속의 층이 침착되어 있는 복합 경질피막.
- 하기 화학식 3을 갖는 경질피막.화학식 3(Al1 -a-d- eVaModWe)(C1 - xNx)상기 식에서,0.2≤a≤0.75이고,0 < d+e ≤0.3이고,0.3 ≤X≤1이고, 이때, a, d, e 및 X는 독립적으로 원자비이되, d 및 e가 동시에는 0이 아니고 d 및 e중 하나는 0일 수 있다.
- 하기 화학식 4를 갖는 경질피막.화학식 4(Al1 -a-b-c-d- eVaSibBcModWe)(C1 - xNx)상기 식에서,0.2≤a≤0.75이고,0 < b+c≤0.20이고,0 < d+e ≤0.3이고,0.3≤X≤1이고,이때, a, b, c, d, e 및 X는 독립적으로 원자비를 나타내되, b 및 c가 동시에는 0이 아니고, b 및 c중 하나는 0일 수 있고, d 및 e가 동시에는 0이 아니고, d 및 e중 하나는 0일 수 있다.
- 하기 화학식 5를 포함하는 경질피막.화학식 5(Al1 -a-f- gVaHffZrg)(C1 - xNx)상기 식에서,0.01≤a≤0.75이고,0<f+g≤0.5이고,0.3≤X≤1이고, 이때 a, f, g 및 X는 독립적으로 원자비이되, f 및 g가 동시에는 0이 아니고, f 및 g중 하나는 0일 수 있다.
- 하기 화학식 6을 포함하는 경질피막.화학식 6(Al1 -a-b-c-f- gVaSibBcHffZrg)(C1 - xNx)상기 식에서,0.01≤a≤0.75이고,0 < b+c≤0.20이고,0<f+g≤0.5이고,0.3≤X≤1이고, 이때 a, b, c, f, g 및 X는 독립적으로 원자비이되, b 및 c가 동시에는 0이 아니고, b 및 c중 하나는 0일 수 있고, f 및 g가 동시에는 0이 아니고, f 및 g중 하나는 0일 수 있다.
- 제 8 항 내지 제 11 항중 어느 한 항에 있어서,NaCl-형 결정 구조를 갖는 경질피막.
- 제 1 항 또는 제 2 항의 경질피막을 포함하는 층(이하 「층 A」라 칭함), 및 Mo 및 W중 하나 이상 및 C 및 N중 하나 이상을 선택하여 수득된 화합물을 포함하는 층(이하 「층 B」로 칭함)을 포함하는 라미네이트 경질피막.
- 제 13 항에 있어서,층 A 및 층 B의 두께가 「층 B의 두께 ≤ 층 A의 두께 ≤200nm」를 만족하는 경질피막.
- 제 1 항 또는 제 2 항의 경질피막을 포함하는 층(이하 「층 A」로 칭함), 및 Zr 및 Hf중 하나 이상 및 C 및 N중 하나 이상을 선택하여 수득된 화합물을 포함하는 층(이하 「층 C」로 칭함)을 포함하는 라미네이트 경질피막.
- 제 15 항에 있어서,층 A 및 층 C의 두께가 「층 C의 두께 ≤ 층 A의 두께 ≤200nm」를 만족하는 경질피막.
- N 및 C의 합계에 대해 N을 30 내지 100원자%로 함유하는 가스중에서, 하기 화학식 7을 포함하는 타겟, 또는 하기 화학식 8을 포함하는 타겟을 사용하여 아크 이온 플레이팅에 의해 침착된 경질피막.화학식 7(Al1 - aVa)상기 식에서, 0.27≤a≤0.75이고, 이때, a는 원자비이다.화학식 8(Al1 -a-b- cVaSibBc)상기 식에서, 0.1≤a≤0.75이고, 0 < b+c≤0.20이고, 이때 a, b, 및 c는 독립적으로 원자비이되, b 및 c가 동시에는 0이 아니고, b 및 c중 하나는 0일 수 있다.
- 하기 (i) 내지 (iv)중 하나를 포함하되, 95% 이상의 상대밀도를 갖는 경질피막 침착용 타겟.(i) Al 및 V,(ii) Al, V, 및 Si,(iii) Al, V, 및 B, 및(iv) Al, V, Si 및 B
- 하기 화학식 7을 포함하는 경질피막 침착용 타겟.화학식 7(Al1 - aVa)상기 식에서,0.27≤a≤0.75이고, 이때, a는 원자비이다.
- 하기 화학식 8을 포함하는 경질피막 침착용 타겟.화학식 8(Al1 -a-b- cVaSibBc)상기 식에서,0.1≤a≤0.75이고,0 < b+c≤0.20이고,이때 a, b, 및 c는 독립적으로 원자비이되, b 및 c가 동시에는 0이 아니고, b 및 c중 하나는 0일 수 있다.
- 제 1 항, 제 2 항 및 제 8 항 내지 제 11 항의 경질피막을 침착시키는 방법으로서,성막 가스 분위기에서 금속을 증발시켜 이온화시키고 상기 금속의 이온화와 함께 상기 성막가스의 플라즈마화를 촉진시켜 피막을 침착시키는 단계를 포함하는, 경질피막의 침착방법.
- 제 19 항의 경질피막을 침착시키는 방법으로서,성막이 아크 이온 플레이팅에 의해 수행되되, 타겟을 구성하는 금속이 아크 방전에 의해 증발되고 이온화되며, 상기 타겟의 증발면에 실질적으로 수직인 방향으로 연장하는 평행 또는 발산의 자력선들이 형성되고, 상기 성막 가스의 플라즈마화가 이들 자력선들에 의해 피처리체 근방에서 촉진되어 상기 경질피막을 침착하는, 경질피막의 침착방법.
- 제 21 항 또는 제 22 항에 있어서,경질피막이 피복될 피처리체의 표면에서 자속밀도가 10 가우스 이상인 경질피막의 침착방법.
- 제 21 항 또는 제 22 항에 있어서,자기장이 자력선과 타겟 증발면의 법선들 사이에 형성된 각이 ±30° 이하가 되도타겟과 피처리체 사이에 형성되는 경질피막의 침착방법.
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JP2009068047A (ja) * | 2007-09-11 | 2009-04-02 | Kobe Steel Ltd | 硬質皮膜、硬質皮膜被覆材および冷間塑性加工用金型 |
US9856556B2 (en) | 2010-04-23 | 2018-01-02 | Oerlikon Surface Solutions Ag, Pfaeffikon | PVD coating for metal machining |
JP5344204B2 (ja) * | 2012-03-05 | 2013-11-20 | 三菱マテリアル株式会社 | 表面被覆切削工具 |
JP6211858B2 (ja) * | 2013-09-12 | 2017-10-11 | 株式会社神戸製鋼所 | 潤滑性と耐摩耗性に優れた硬質皮膜の製造方法 |
JP6349581B2 (ja) * | 2015-01-14 | 2018-07-04 | 住友電工ハードメタル株式会社 | 硬質被膜、切削工具および硬質被膜の製造方法 |
CN104805404B (zh) * | 2015-04-30 | 2017-03-01 | 山东大学 | Mo‑W‑S‑C自润滑涂层刀具的制备工艺 |
JP6963932B2 (ja) * | 2017-08-14 | 2021-11-10 | Dowaサーモテック株式会社 | 珪炭窒化バナジウム膜、珪炭窒化バナジウム膜被覆部材およびその製造方法 |
JP6984108B2 (ja) | 2018-03-07 | 2021-12-17 | 住友電工ハードメタル株式会社 | 表面被覆切削工具及びその製造方法 |
CN111587157B (zh) | 2018-03-07 | 2023-06-20 | 住友电工硬质合金株式会社 | 表面被覆切削工具及其制造方法 |
EP3870733A1 (en) | 2018-10-26 | 2021-09-01 | Oerlikon Surface Solutions AG, Pfäffikon | Vanadium aluminium nitride (vain) micro alloyed with ti and/or si |
WO2020187744A1 (en) * | 2019-03-15 | 2020-09-24 | Nanofilm Technologies International Pte Ltd | Improved coating processes |
CN112126900B (zh) * | 2019-06-24 | 2023-06-23 | 中国科学院宁波材料技术与工程研究所 | 高温低摩擦硬质纳米多层VAlCN/VN-Ag涂层、其制备方法及应用 |
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