KR20050094478A - 단자간 접속 방법 및 반도체 장치의 실장 방법 - Google Patents
단자간 접속 방법 및 반도체 장치의 실장 방법 Download PDFInfo
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- KR20050094478A KR20050094478A KR1020057014486A KR20057014486A KR20050094478A KR 20050094478 A KR20050094478 A KR 20050094478A KR 1020057014486 A KR1020057014486 A KR 1020057014486A KR 20057014486 A KR20057014486 A KR 20057014486A KR 20050094478 A KR20050094478 A KR 20050094478A
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Abstract
Description
수지 | 경화 개시 온도(℃) | 피크 온도(℃) |
에피클론 SR-A | 109.31 | 125.88 |
펭귄 시멘트 RD-0205 | 81.95 | 140.70 |
Claims (7)
- 적어도 도전성 입자와 그 도전성 입자의 융점에서 경화가 완료되지 않은 수지 성분을 함유하는 이방성 도전 수지 조성물을 사이에 두고, 단자끼리를 서로 대향시켜 배치하는 단자 배치 단계와,상기 도전성 입자의 융점보다도 높으면서, 또한 상기 수지 성분의 경화가 완료되지 않은 온도로, 상기 이방성 도전 수지 조성물을 가열하는 수지 가열 단계와,상기 수지 성분을 경화시키는 수지 성분 경화 단계를 포함하는 것을 특징으로 하는 단자간 접속 방법.
- 제 1 항에 있어서, 상기 수지 가열 단계에서, 상기 이방성 도전 수지 조성물을 사이에 두고, 양 단자를 압접시키는 것을 특징으로 하는 단자간 접속 방법.
- 제 1 항에 있어서, 상기 수지 성분은, 단자 표면 및 도전성 입자 표면 중의 적어도 일방을 환원하는 환원성을 갖는 수지인 것을 특징으로 하는 단자간 접속 방법.
- 제 2 항에 있어서, 상기 수지 성분은, 단자 표면 및 도전성 입자 표면 중의 적어도 일방을 환원하는 환원성을 갖는 수지인 것을 특징으로 하는 단자간 접속 방법.
- 제 1 항 내지 제 4 항 중 어느 한 항에 있어서, 상기 단자 배치 단계에 있어서의 상기 이방성 도전 수지 조성물이, 대향하는 각 상기 단자 사이를 포함하고, 각 상기 단자가 형성되어 있는 부재 사이에 끼워지는 대향 공간 전체에 충전되어 있는 상태가 되도록, 상기 이방성 도전 수지 조성물을 공급하는 것을 특징으로 하는 단자간 접속 방법.
- 반도체 칩의 전극 패드와, 그 전극 패드에 대응하도록 형성된 배선 기판상의 회로 전극을, 적어도 도전성 입자와 수지 성분을 함유하는 이방성 도전 수지 조성물을 사이에 두고 대향하도록 배치하는 전극 배치 단계와,상기 도전성 입자의 융점보다도 높으면서, 또한 상기 수지 성분의 경화가 완료되지 않은 온도로, 상기 이방성 도전 수지 조성물을 가열하는 수지 가열 단계와,상기 수지 성분을 경화시키는 수지 성분 경화 단계를 포함하는 것을 특징으로 하는 반도체 장치의 실장 방법.
- 제 6 항에 있어서, 상기 전극 배치 단계에 있어서의 상기 이방성 도전 수지 조성물이, 대향하는 상기 전극 패드와 상기 회로 전극과의 사이를 포함하고, 상기 반도체 칩과 상기 배선 기판 사이에 끼워지는 대향 공간 전체에 충전되어 있는 상태가 되도록, 상기 이방성 도전 수지 조성물을 공급하는 것을 특징으로 하는 반도체 장치의 실장 방법.
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Also Published As
Publication number | Publication date |
---|---|
US7524748B2 (en) | 2009-04-28 |
US20070001313A1 (en) | 2007-01-04 |
EP1615263A1 (en) | 2006-01-11 |
CN100409423C (zh) | 2008-08-06 |
CN1820361A (zh) | 2006-08-16 |
KR101057608B1 (ko) | 2011-08-18 |
EP1615263A4 (en) | 2006-10-18 |
WO2004070827A1 (ja) | 2004-08-19 |
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