CN101156236B - 倒装片安装方法及凸块形成方法 - Google Patents

倒装片安装方法及凸块形成方法 Download PDF

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Publication number
CN101156236B
CN101156236B CN2006800114345A CN200680011434A CN101156236B CN 101156236 B CN101156236 B CN 101156236B CN 2006800114345 A CN2006800114345 A CN 2006800114345A CN 200680011434 A CN200680011434 A CN 200680011434A CN 101156236 B CN101156236 B CN 101156236B
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Prior art keywords
solder
resin composition
resin
circuit substrate
gas
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CN101156236A (zh
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北江孝史
中谷诚一
辛岛靖治
山下嘉久
一柳贵志
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Abstract

在第1电子元件(2)上载置含有焊料粉(5a)和树脂(4)的焊料树脂组合物(6),第1电子元件(2)的连接端子(3)和第2电子元件(8)的电极端子(7)相对置地配置,加热第1电子元件(2)和焊料树脂组合物以使从包含在第1电子元件(2)中的气体发生源(1)喷出气体,通过使气体(9a)在焊料树脂组合物(6)中对流,从而使焊料粉(5a)在焊料树脂组合物(6)中流动,使其自己集合在连接端子(3)及电极端子(7)上,从而使连接端子(3)及电极端子(7)电连接。由此,提供一种能够将以窄节距布线的半导体芯片的电极端子和电路基板的连接端子高连接可靠性地连接的倒装片安装方法、以及用于安装在电路基板上的凸块形成方法。

Description

倒装片安装方法及凸块形成方法
技术领域
本发明涉及在电路基板上安装半导体芯片等的倒装片安装方法,还涉及在电路基板的连接端子上形成凸块的方法,特别涉及在具有以窄节距排列的连接端子的电路基板上能够可靠地形成微细凸块、安装半导体芯片的凸块形成方法。
背景技术
近年来,以快速扩大普及的手机或笔记本电脑、便携式信息终端(PDA)、数字摄像机等为代表的电子设备的小型化、薄型化、轻量化正在快速推进。另外,还强烈要求高性能化、多功能化。为适应这些要求,通过半导体器件、电路元件的超小型化或这些电子元件的安装技术等,电子电路的高密度化正在显著地进展。
该技术开发的中心是半导体集成电路(LSI)的高密度安装技术。例如,伴随LSI芯片的电极端子向多引脚化、窄节距化的快速发展,半导体封装技术等的利用裸片的倒装片安装的CSP(芯片尺寸封装)及在外部端子上的PPGA(Plastic Pin Grid Array;塑料针栅阵列)、BGA(BallGrid Array;球栅阵列)安装等正在普及。因此,进一步要求与搭载的IC的高速化、小型化及输入输出端子数的增加对应的新型安装技术。
在上述倒装片安装中,首先,在半导体芯片上形成多个电极端子,在该电极端子上形成由焊料或Au等构成的凸块。然后,使半导体芯片上的凸块与形成在电路基板上的连接端子相对置,将上述电极端子上的凸块和与其各自对应的连接端子电连接。另外,为了提高半导体芯片和电路基板的电连接、机械接合,进行在半导体芯片和电路基板之间充填(未充满)树脂材料的工序。
但是,为了在电路基板上安装电极端子数超过5000个的下一代LSI,需要形成与100μm以下的窄节距对应的凸块,但在目前的焊料凸块形成技术中,很难与之对应。
此外,由于需要形成与电极端子数对应的多个凸块,因此还要求低成本化,同时还要求通过缩短每个芯片的安装作业而具有高生产率。
以往,作为凸块形成技术,一直采用镀覆法或丝网印刷法等。但是,镀覆法虽适合窄节距,但工序复杂,生产率存在问题。此外,丝网印刷法生产率优异,但因采用掩模而难进行窄节距化。
在这样的状况下,近年来,提出了在LSI芯片或电路基板的连接端子上选择性地形成焊料凸块的技术。这些技术不仅适合微细凸块的形成,而且由于能够进行凸块的成批形成,所以生产率优异,作为在下一代LSI的电路基板上的安装技术而正在受到关注。
上述安装技术是,首先,在形成有进行了表面氧化的连接端子的电路基板上的整个表面上涂布由焊料粉末和树脂的混合物形成的焊膏。接着,通过加热电路基板以使焊料粉末熔融,在相邻的连接端子间不引起短路地且选择性地在连接端子上形成凸块(例如,参照专利文献1)。
此外,公开了首先在形成有连接端子的电路基板整个表面上涂布以有机酸铅盐和金属锡为主成分的膏状组合物(化学反应析出型焊料),接着通过加热电路基板而引起Pb和Sn的置换反应,使Pb和Sn的合金选择性地在电路基板的连接端子上析出的例子(例如,参照专利文献2或非专利文献1)。
另外,公开了将表面上形成有连接端子的电路基板浸入药剂中而只在连接端子的表面上形成了粘合性皮膜后,使焊料粉末粘接在该粘合性皮膜上,从而选择性地在连接端子上形成凸块的例子(例如,参照专利文献3)。
上述专利文献1的目的在于,通过控制焊料粉的表面氧化,具有对金属的浸润性,并且不易在邻接端子间引起短路。但是,只通过氧化量、氧化方法来控制本来相反的特性是比较困难的。
此外,在专利文献2中使用的化学反应析出型焊料的材料由于利用特定的化学反应,所以焊料组成选择的自由度低,在应对无铅化方面还存在问题。
另一方面,在专利文献3中由于均匀地在电极上附着焊料粉,因此能够得到均匀的焊料凸块,此外,由于焊料组成选择的自由度大,所以在也容易应对无铅化这点上是优异的。但是,由于按照专利文献3的工艺,在必需的电极表面上选择性地形成粘合性皮膜的工序需要进行利用化学反应的特殊的药剂处理,因此工序复杂,同时也增加成本,适用于批量生产工序还存在问题。
为了解决上述问题,最近公开了通过在半导体芯片的突起状的电极端子和电路基板上的连接端子间夹着由含有导电性粒子的各向异性导电材料构成的薄膜,并加热、加压,从而只将规定的导通部分电连接的方法(例如,参照专利文献4)。
此外,还提出了向半导体芯片和电路基板间供给含有导电性粒子的热固化性树脂,在加压半导体芯片的同时,也加热该树脂,使熔融了的导电性粒子集合在半导体芯片和电路基板的各端子间,在进行电连接的同时,也接合半导体芯片和电路基板的技术等(例如,参照专利文献5)。
但是,在通过将夹在半导体芯片和电路基板之间的树脂加压、加热以使熔融了的焊料粉自动地集合在半导体芯片和电路基板的各端子间时,一般来说涂布在电路基板上的导电性粘接剂因在该加热阶段进行高分子化而使粘度缓慢提高。因此,存在下述的问题:不能使足够量的熔融的焊料粉向电极端子上移动,树脂固化,部分焊料粉残存在连接端子间以外的部分,导致绝缘性降低。
专利文献1:特开2000-94179号公报
专利文献2:特开平1-157796号公报
专利文献3:特开平7-74459号公报
专利文献4:特开2000-332055号公报
专利文献5:特开2004-260131号公报
非专利文献1:エレクトロニクス
Figure 2006800114345_0
装技術,2000年9月号,pp38-45
发明内容
本发明的目的是进一步提高利用上述本申请发明人等提出的技术所得到的效果。即,提供一种具有以窄节距布线的半导体芯片的电极端子和电路基板的连接端子的高连接可靠性、并且能够高效率地防止电极间的短路的倒装片安装方法、以及用于在具有多个连接端子的电路基板上安装半导体芯片等的凸块形成方法。
本发明的倒装片安装方法的特征在于:其是用于将包含多个连接端子的第1电子元件和与所述连接端子对应地包含多个电极端子的第2电子元件电连接的倒装片安装方法,其中在所述第1电子元件上载置包含焊料粉和树脂的焊料树脂组合物;所述第1电子元件的所述连接端子和所述第2电子元件的所述电极端子相对置地配置;加热所述第1电子元件和所述焊料树脂组合物以使从包含在所述第1电子元件中的气体发生源喷出气体;通过使所述气体在所述焊料树脂组合物中对流,从而使所述焊料粉在所述焊料树脂组合物中流动,使其自己集合在所述连接端子及所述电极端子上,从而使所述连接端子及所述电极端子电连接。
本发明的凸块形成方法的特征在于:在包含多个连接端子的电路基板上载置包含焊料粉和树脂的焊料树脂组合物,在其上表面上搭接盖面材;加热所述电路基板和所述焊料树脂组合物以使从包含在所述电路基板中的气体发生源喷出气体;通过使所述气体在所述焊料树脂组合物中对流,从而使所述焊料粉在所述焊料树脂组合物中流动,使其自己集合在所述连接端子上;除去所述盖面材。
本发明的另~凸块形成方法的特征在于:在包含多个连接端子的电路基板的除所述连接端子以外的面上涂布脱模剂;在所述电路基板上载置包含焊料粉和树脂的焊料树脂组合物,在其上表面上搭接盖面材;加热所述电路基板和所述焊料树脂组合物以使从包含在所述电路基板中的气体发生源喷出气体;通过使所述气体在所述焊料树脂组合物中对流,从而使所述焊料粉在所述焊料树脂组合物中流动,使其自己集合在所述连接端子上;使所述焊料树脂组合物的所述树脂热固化而形成树脂层;从所述电路基板剥离所述盖面材和所述树脂层。
本发明的又一凸块形成方法的特征在于:在包含多个连接端子的电路基板上载置包含焊料粉和树脂的焊料树脂组合物,在其上表面上在分别与所述电路基板的多个连接端子对应的位置,与所述连接端子相对置地形成由金属构成的接合区(land),并且在所述接合区以外的区域搭接涂布了脱模剂的盖面材;加热所述电路基板和所述焊料树脂组合物以使从包含在所述电路基板中的气体发生源喷出气体;通过使所述气体在所述焊料树脂组合物中对流,从而使所述焊料粉在所述焊料树脂组合物中流动,使其自己集合在所述连接端子上;使所述焊料树脂组合物的所述树脂热固化而形成树脂层;剥离所述盖面材。
本发明的再一凸块形成方法的特征在于:在包含多个连接端子的电路基板上载置包含焊料粉和树脂的焊料树脂组合物,在其上表面上搭接盖面材;加热所述电路基板和所述焊料树脂组合物以使从包含在所述电路基板中的气体发生源喷出气体;通过使所述气体在所述焊料树脂组合物中对流,从而使所述焊料粉在所述焊料树脂组合物中流动,使其自己集合在所述连接端子上;在熔融了的所述焊料粉固化后,除去所述盖面材和所述树脂。
附图说明
图1A-E是说明本发明的实施方式1中的倒装片安装方法的工序剖视图。
图2A-D是将本发明的实施方式1中的倒装片安装方法的工序的一部分放大地示意表示的剖视图。
图3A-F是说明本发明的实施方式2中的凸块形成方法的工序剖视图。
图4A-F是说明本发明的实施方式3中的凸块形成方法的工序剖视图。
图5A是在本发明的实施方式4中的凸块形成方法中采用的盖面材的俯视图、图5B是图5A的I-I线剖视图、图5C是表示图5A的应用例的I-I线剖视图。
图6A-F是说明本发明的实施方式4中的凸块形成方法的工序剖视图。
图7A-B是说明本发明的实施方式4中的凸块形成方法的应用例的工序剖视图。
具体实施方式
本发明的安装体中第1电子元件上的连接端子和第2电子元件上的电极端子用焊料连接体电连接。该焊料连接体是通过焊料粉集合而形成的。该焊料连接体是按照如下的步骤而形成的:通过加热包含焊料粉和树脂的焊料树脂组合物,并且使得从气体发生源喷出气体,从而利用气体的运动能使树脂及焊料粉流动(=对流),通过使焊料粉集合以将连接端子和电极端子间连结。即,通过加热和喷出气体,焊料树脂组合物中的树脂流动,通过伴随该流动而使焊料粉移动,从而集合在电极上。
在本发明中,所谓“包含焊料粉和树脂”,指的是在将焊料树脂组合物整体设定为100重量%时,焊料粉和树脂的合计量在20重量%以上。在本发明的焊料树脂组合物的树脂中可以含有例如固化剂、反应引发剂、耐光剂、耐候剂、稳定剂、氧化膜除去剂、着色剂等任意的添加物。此外,在本发明的焊料树脂组合物中,除焊料粉、树脂以外,也可以添加无机类填料或有机类填料等。
在本发明中,另外也可以在使连接端子和电极端子电连接的工序后,通过使树脂固化来使第1电子元件和第2电子元件粘接。
另外,气体发生源也可以是包含在第1电子元件中的水分。
另外,气体发生源也可以是在第1电子元件中含有的气体发生剂。
另外,气体发生源也可以是选自己烷、醋酸乙烯酯、异丙醇、醋酸丁酯、丙酸、乙二醇、N-甲基-2-吡咯烷酮、α-萜品醇、丁基卡必醇、以及丁基卡必醇乙酸酯等中的至少一种的蒸发型气体发生剂。
另外,气体发生源也可以是选自氢氧化铝、片钠铝石、偏硼酸铵、偏硼酸钡、偶氮甲酰胺(ADCA)、碳酸氢钠、氢氧化铝、铝酸钙、硼酸、N,N’-二亚硝基五亚甲基四胺(DPT)以及4,4’-氧双(苯磺酰肼)(OBSH)中的至少一种的分解型气体发生剂。
另外,第1电子元件也可以是电路基板,第2电子元件也可以是半导体芯片。
另外,也可以在电路基板上安装多个半导体芯片。
由此,可实现半导体装置的高密度安装。
另外,焊料树脂组合物也可以是膏状或片状。
另外,气体发生剂优选在焊料树脂组合物的固化反应开始温度和固化温度之间具有沸点或分解温度,在沸点下或在分解温度下,从电路基板喷出气体。
另外,焊料树脂组合物的树脂也可以是以环氧树脂、不饱和聚酯树脂、醇酸树脂、聚丁二烯树脂、聚酰亚胺树脂、聚酰胺树脂以及氰酸酯树脂中的任何一种作为主要材料的热固化性树脂。
利用这些方法能够将以窄节距形成的半导体芯片的电极端子和电路基板的连接端子高可靠性地连接、同时能够实现各端子间无短路的倒装片安装。
此外,与上述同样地,加热电路基板和焊料树脂组合物,使得从包含在电路基板中的气体发生源喷出气体,通过使气体在焊料树脂组合物中对流,从而使焊料粉在焊料树脂组合物中流动,使其自己集合在连接端子上,除去盖面材。
盖面材也可以是由硅氧烷树脂、含氟树脂以及聚丙烯树脂中的任何一种构成的盖面材或涂布了硅油等脱模剂的盖面材中的任何一种。
另外,脱模剂的厚度也可以比接合区的厚度厚。
另外,焊料树脂组合物中含有的树脂也可以不发生加热固化且在冷却时具备流动性。
另外,气体发生源也可以是包含在电路基板中的水分。
另外,气体发生源也可以是在电路基板中含有的气体发生剂。
另外,气体发生剂也可以是选自己烷、醋酸乙烯酯、异丙醇、醋酸丁酯、丙酸、乙二醇、N-甲基-2-吡咯烷酮、α-萜品醇、丁基卡必醇以及丁基卡必醇乙酸酯中的至少一种的蒸发型气体发生剂。
另外,气体发生剂也可以是选自氢氧化铝、片钠铝石、偏硼酸铵、偏硼酸钡、偶氮甲酰胺(ADCA)、碳酸氢钠、氢氧化铝、铝酸钙、硼酸、N,N’-二亚硝基五亚甲基四胺(DPT)以及4,4’-氧双(苯磺酰肼)(OBSH)中的至少一种的分解型气体发生剂。
另外,焊料树脂组合物也可以是膏状或片状。
另外,焊料树脂组合物的树脂也可以是选自环氧树脂、不饱和聚酯树脂、醇酸树脂、聚丁二烯树脂、聚酰亚胺树脂、聚酰胺树脂以及氰酸酯树脂中的任何一种的热固化性树脂。
利用这些方法,能够均匀且高生产率地在电路基板的连接端子上形成多个凸块。
此外,本发明的倒装片安装体也可以用上述倒装片安装方法制造。
此外,本发明的凸块安装体也可以用上述凸块形成方法制造。
从而,能够实现适应于窄节距化、多引脚化的半导体芯片和电路基板的倒装片安装体及电路基板等的凸块安装体。
在上述中,焊料粉的熔点优选在16℃~316℃的范围。
此外,焊料粉的平均粒径优选在1~50μm的范围。
此外,加热焊料树脂组合物的温度优选在焊料的熔点以上。
焊料粉可以选择使用任意的焊料粉。例如可列举出下表1中所示的焊料粉。作为一个例子举出的表1中所示的材料,可以单独使用,也可以适宜地组合使用。
表1
 焊料粉的组成   熔点(固相线)(℃)
 24In-76Ga   16
 Sn-57Bi-26In   79
 Sn-58In   117
 Sn-58Bi   139
 Sn-37Pb   183
 Sn-9Zn   199
 Sn-3.0Ag-0.5Cu   217
 Sn-3.5Ag   221
 Sn-0.7Cu   228
 12Sn-2.0Ag-10Sb-Pb   240
 Sn-90Pb   268
 Sn-1.5Ag-93.5Pb   296
 Sn-95Pb   316
焊料粉的优选的平均粒径为1~50μm的范围。另外,平均粒径可用市售的粒度分布仪测定。例如,可采用堀场制作所制造的激光衍射粒度测定器(LA920)、岛津制作所制造的激光衍射粒度测定器(SALD2100)等测定。
下面,对树脂进行说明。作为树脂的代表性例子,可使用环氧树脂、酚醛树脂、硅氧烷树脂、邻苯二甲酸二烯丙酯树脂、呋喃树脂等热固化性树脂,聚酯弹性体、含氟树脂、聚酰亚胺树脂、聚酰胺树脂、芳香族聚酰胺树脂等热塑性树脂、或光(紫外线)固化树脂等,或这些树脂组合而成的材料。
焊料粉优选为4~75重量%的范围。焊料粉和树脂优选在均匀混合后使用。例如,将焊料粉设定为50重量%,将环氧树脂设定为50重量%,用混炼器形成均匀混合状态,然后使用。另外,焊料粉可以形成为保持了分散状态的膏状来使用,也可以形成为片状来使用。
另外,在本发明的优选例子中,作为焊料粉,例如可使用无铅的熔点为200~250℃的焊料合金粒子。
根据本发明,可以通过利用由从包含在电路基板等中的气体发生源喷出的气体所产生的焊料树脂组合物的对流、流动来高效率地使焊料粉自己集合在连接端子等上,利用倒装片安装来进行电连接。此外,由于通过尽可能地抑制在连接端子以外的区域残留焊料粉,能够提高绝缘性,因此对于增进窄节距化、多引脚化的半导体芯片的倒装片安装和电路基板等的凸块形成也都具有显著的效果。
以下,参照附图对本发明的实施方式进行说明。另外,本发明并不限定于下述的实施例。对于各附图中相同的构成要素,标注相同符号来说明。
(实施方式1)
图1A-E是说明本发明的实施方式1中的倒装片安装方法的工序剖视图。
首先,如图1A所示,准备形成有多个连接端子3的第1电子元件即例如由芳香族聚酰胺环氧树脂构成的电路基板2。另外,在电路基板2中含有气体发生源1,该气体发生源由通过吸附或吸水而包含在电路基板2中的水分、或例如各种醇类等蒸发型气体发生剂、或氢氧化铝、偏硼酸铵等分解型气体发生剂构成。
接着,如图1B所示,在设有多个连接端子3的电路基板2的面上,例如采用分配器(未图示出)等涂布焊料树脂组合物6,该焊料树脂组合物是通过例如在含有以双酚A型环氧树脂和双氰胺为主成分的热固化性树脂的树脂4中均匀分散了焊料粉5a而得到的。另外,为了除去焊料粉表面上的氧化膜,焊料树脂组合物也可以含有氧化膜除去剂(例如,助熔剂等)。
接着,如图1C所示,在焊料树脂组合物6的上表面上搭接具有多个电极端子7的半导体芯片8作为第2电子元件。此时,半导体芯片8的电极端子7和电路基板2的连接端子3分别相对置地配置。
接着,如图1D所示,至少从电路基板2侧(箭头所示方向)例如用加热器(未图示出)等加热电路基板2和焊料树脂组合物6。由此,在电路基板2中含有的水分等气体发生源1沸腾,例如水蒸气等气体9a从电路基板2的表面喷出到焊料树脂组合物6中。此时,气体9a的大部分从电路基板2的连接端子3以外的表面喷出。由此,可使存在于连接端子3和连接端子3之间的焊料粉有效地向连接端子3上移动,可防止发生短路或焊球等。
另外,伴随着温度上升,焊料树脂组合物6的粘度下降,喷出的气体9a使焊料树脂组合物6对流。
另外,在本发明中,将“对流”这个表达作为包含焊料树脂组合物的移动或流动等广义的含义的表达来使用。由于通过该对流使焊料粉5a强制地移动,因此可在各连接端子3和电极端子7上形成均匀的焊料层。此时,气体9a在使焊料树脂组合物6流动后,作为排气9b从被电路基板2和半导体芯片8包围的外周的间隙排出到外部。
接着,如图1E所示,熔融了的焊料粉一边自己集合在连接端子3及电极端子7上,一边继续生长,最终在电路基板2的连接端子3和半导体芯片8的电极端子7之间形成焊料层10,制成倒装片安装体12。然后,通过将焊料树脂组合物6的树脂固化,从而同时形成用于固接电路基板2和半导体芯片8的树脂层11。
以下,采用图2更详细地说明在图1D的工序示出的本发明的从气体发生源喷出的气体的作用。
图2A-D是将图1D所示的焊料粉5a通过由从电路基板2的气体发生源1喷出的气体9a形成的对流而自己集合、生长并接合在电路基板2的连接端子3及半导体芯片8的电极端子7上的过程的一部分放大地示意表示的剖视图。另外,图2A-D表示正在熔融的焊料粉5a一边对流一边自己集合的情况。除此以外,也有时在未熔融的温度(熔点以下)下利用喷出的气体9a只引起对流,利用气体9a从连接端子3和连接端子3之间喷出的效果而使焊料粉5a自己集合在连接端子3及电极端子7上。
首先,如图2A所示,焊料粉5a通过由箭头所示的对流而在焊料树脂组合物6中流动,所述对流是因电路基板2的温度上升,由包含在电路基板2中的气体发生源1沸腾形成的气体9a所产生。
接着,如图2B所示,被加热的焊料粉5a的一部分成为熔融焊料5b,并且与焊料粉5a一起在焊料树脂组合物6中流动。而且,如果到达电路基板2的连接端子3及半导体芯片8的电极端子7的附近,就被对焊料的浸润性高的连接端子3及电极端子7捕捉而浸润接合,分别形成熔敷焊料5c。此时,从电路基板2的气体发生源1喷出的气体9a在焊料树脂组合物6中对流后,作为外部的排气9b从被电路基板2和半导体芯片8包围的外周的间隙排出到外部。
接着,如图2C所示,被连接端子3及电极端子7捕捉的熔敷焊料5c进一步通过从电路基板2的气体发生源1喷出的气体9a,使在其周围对流的焊料粉5a及熔融焊料5b自己集合并生长。最终,连接端子3上的熔敷焊料5c和电极端子7上的熔敷焊料5c接触而合为一体。此外,在此时,随着焊料粉5a及熔融焊料5b的自己集合达到最终阶段,通过加热从气体发生源1供给的气体9a的发生也减少。
然后,如图2D所示,制作如下的倒装片安装体12:电路基板2的连接端子3和半导体芯片8的电极端子7通过焊料层10电连接,同时半导体芯片8和电路基板2通过树脂层11固接。
另外,图1E和图2D表示按上述方法在电路基板2上将半导体芯片8进行倒装片安装而得到的倒装片安装体12。如该图所示,半导体芯片8的电极端子7在通过焊料层10与电路基板2上的连接端子3连接后,焊料树脂组合物6中的树脂4固化而成为树脂层11,使电路基板2和半导体芯片8机械地粘接。因而,能够省略以往所必需的未填充满树脂的充填工序。
另外,在本发明的实施方式1中,作为焊料树脂组合物6的树脂4,对采用以双酚A型环氧树脂为主成分的热固化性树脂的例子进行了说明,但并不局限于此。例如,即使采用聚酰亚胺树脂、氰酸酯树脂等,也能够得到令人满意的效果。
此外,在本发明的实施方式1中,对将含有焊料粉5a的焊料树脂组合物6形成膏状并涂布在电路基板2上的例子进行了说明,但并不局限于此。例如,也能够预先使焊料树脂组合物6半固化而作为预浸渍体状态的片状树脂来使用。
此外,在本发明的实施方式1中,作为电路基板2使用了芳香族聚酰胺环氧树脂基板,但是作为含有气体发生源1的电路基板2,并不特别限定。例如,可以采用玻璃环氧树脂基板或聚酰亚胺树脂基板等。
此处,以水分量为例对电路基板2中含有的气体发生源1的量进行说明。一般来说,由于芳香族聚酰胺环氧树脂等电路基板的含水率小于3.5重量%,所以将电路基板中的含水率设定为1.5重量%,由此估算水分量。在此种情况下,如果将本发明的实施方式1中所使用的电路基板的尺寸假设为:面积为长10mm、宽10mm,厚度为0.4mm,将电路基板的比重假设为2.0,则在电路基板中存在1.2mg的水分作为气体发生源。此外,在将电路基板加热到150℃~250℃时,如果使得其中50%左右从电路基板的气体发生源作为气体产生,则大约1.16ml的水分成为水蒸气等气体并喷出,产生对流。如果考虑电路基板和半导体芯片间具有几十μm~几百μm左右的间隔,则可以认为该气体量是对于使在焊料树脂组合物中浮游的焊料粉或熔融焊料向连接端子上移动而使其自己集合所必需的且足够的量。
此外,在电路基板中含有的气体发生源的量(例如,含水量)不充分的情况下,也可以采用下述的方法:通过在例如温度为30℃~85℃、相对湿度为60%~85%RH的恒温恒湿槽中保持一定时间,使其吸湿作为气体发生源的充分的水分量。另外,也可以利用将电路基板浸渍在水中的方法。
此外,在使用醋酸丁酯、乙二醇等有机溶剂作为气体发生源的情况下,通过在这些有机溶剂中在一定条件下浸渍或放置电路基板,从而可使有机溶剂包含在电路基板中作为供给必需的气体量的气体发生源。
如果说明具体的一例子,则作为气体发生源,使用在玻璃纤维增强的环氧浸渍树脂基板中浸渍大约0.7重量%的醋酸丁酯而得到的基板。焊料树脂组合物使用均匀地混合了双酚F型环氧树脂(日本环氧树脂公司制エピユ一ト806)65重量份、平均粒径20μm的SnAgCu粉末35重量份而成的焊料树脂组合物。采用分配器将该焊料树脂组合物注入电路基板和半导体芯片表面之间,从室温(25℃)升温到250℃,保持30秒钟。然后冷却,若观察断面,则可以确认为图2D的状态。
(实施方式2)
以下,采用图3A-F对本发明的实施方式2的凸块形成方法进行说明。图3A-F是对本发明的实施方式2中的凸块形成方法进行说明的工序剖视图。
首先,如图3A所示,准备形成有多个连接端子23的第1电子元件即例如由芳香族聚酰胺环氧树脂构成的电路基板22。另外,在电路基板22中含有气体发生源21,该气体发生源由通过吸附或吸水而包含在电路基板22中的水分、或例如各种醇类等蒸发型气体发生剂、或氢氧化铝、偏硼酸铵等分解型气体发生剂构成。
接着,如图3B所示,在设置有多个连接端子23的电路基板22的面上,例如采用分配器等涂布焊料树脂组合物26,该焊料树脂组合物是通过例如在含有以双酚F型环氧树脂为主要材料的热固化性树脂等的树脂24中均匀分散了焊料粉5a而得到的。
接着,如图3C所示,在焊料树脂组合物26的上表面上载置由聚丙烯树脂等脱模性树脂构成的盖面材25。此时,从能够形成均匀的凸块这点考虑,盖面材25优选与电路基板22保持规定的间隔。作为保持规定的间隔的方法,例如可采用夹具或垫板等来进行。
接着,如图3D所示,至少从电路基板22侧例如用加热器等加热电路基板22和焊料树脂组合物26。由此,在电路基板22中含有的水分等气体发生源1沸腾,例如水蒸气等气体9a从电路基板22表面喷出到焊料树脂组合物26中。此时,气体9a的大部分从电路基板22的连接端子23以外的表面喷出。
另外,伴随着温度上升,焊料树脂组合物26的粘度下降,喷出的气体9a使焊料树脂组合物26对流。通过该对流,焊料粉5a自己集合在连接端子23上。此时,气体9a在使焊料树脂组合物6流动后,作为排气9b从被电路基板22和盖面材25包围的外周的间隙排出到外部。
接着,如图3E所示,熔融的焊料粉一边在连接端子23上自己集合,与图2B所示的情况同样地形成熔敷焊料,一边生长。然后,熔敷焊料的上端到达盖面材25,最终在电路基板22的连接端子23和盖面材25之间形成焊料层30。进而,通过将焊料树脂组合物26的树脂24固化,从而同时形成树脂层27。
然后,如图3F所示,通过剥离由脱模性树脂构成的盖面材25而形成凸块安装体28,该凸块安装体28具有形成于电路基板22的连接端子23上的凸块30、和在其周围将焊料树脂组合物26中的树脂24固化而形成的树脂层27。
另外,在图3D所示的工序的最终阶段,电路基板22中的气体发生源21即水分由于其大部分蒸发而从电路基板22作为排气9b被排出到外部,因此没有降低电路基板22的绝缘性。
此外,盖面材25由于用对焊料或热固化性树脂等树脂不具有粘接性的聚丙烯树脂等脱模性树脂形成,所以能够容易地从电路基板22上剥离。
此外,虽未图示出来,但在通过另外的工序在形成于该电路基板22上的凸块30上将例如半导体芯片等进行倒装片安装时,也可以从电路基板22上除去树脂层27后来使用。
另外,在本发明的实施方式2中对采用聚丙烯树脂作为盖面材25的例子进行了说明,但并不局限于此。例如,采用硅氧烷树脂、含氟树脂等也能够得到同样的效果。
此外,也可以在不是脱模性树脂的盖面材的表面上涂布例如硅油等脱模剂而用作盖面材25。
(实施方式3)
以下,采用图4A-F,对本发明的实施方式3中的凸块形成方法进行说明。图4A-F是说明本发明的实施方式3中的凸块形成方法的工序剖视图。
首先,如图4A所示,作为气体发生源31,例如通过在除了设置于含有氢氧化铝的电路基板32的上表面上的连接端子33以外的电路基板32的上表面上,例如用印刷法等涂布例如硅油等脱模剂34而形成。
接着,如图4B所示,采用例如分配器等涂布在由助熔剂或有机溶剂构成的树脂35中均匀分散了焊料粉5a而得到的焊料树脂组合物36。
接着,如图4C所示,在焊料树脂组合物36的上表面上,与实施方式2时同样地载置例如由聚丙烯树脂片或硅氧烷树脂片等脱模性树脂构成的盖面材25。
接着,如图4D所示,将电路基板32从下表面例如用加热器等加热到至少焊料粉5a熔融且气体发生源31的氢氧化铝的分解温度即230℃以上的温度。由此,氢氧化铝分解,水蒸气作为气体39a从电路基板32的表面,透过脱模剂34,喷出到焊料树脂组合物36中。
然后,喷出的气体39a使焊料树脂组合物36对流。通过该对流,焊料粉5a自己集合在连接端子33上。此时,气体39a在使焊料树脂组合物36对流后,作为排气39b从被电路基板32和盖面材25包围的外周的间隙排出到外部。
接着,如图4E所示,熔融了的焊料粉一边在连接端子33上自己集合,与图2B所示的情况同样地形成熔敷焊料,一边生长。然后,熔敷焊料的上端到达盖面材25,最终在电路基板32的连接端子33和盖面材25之间形成焊料层40。然后,通过将焊料树脂组合物36的树脂35固化,从而同时形成树脂层37。
接着,如图4F所示,剥离由脱模性树脂构成的盖面材25,然后,进一步通过形成于电路基板32上的脱模剂34的剥离,从而同时剥离树脂层37。由此,可得到在电路基板32上只留有凸块40的凸块安装体38。
另外,盖面材25由于用对焊料或热固化性树脂等树脂不具有粘接性的聚丙烯树脂片等脱模性树脂形成,所以能够容易地从凸块40和树脂层37剥离。此外,由于树脂层37隔着脱模剂34在电路基板32上固化,所以也能够容易地从电路基板32上剥离。
另外,在本发明的实施方式3中,对采用硅油作为脱模剂34的例子进行了说明,但并不局限于此。例如,也可以采用薄膜状或片状的脱模剂。此外,在涂布脱模剂的情况下,为了不妨碍从电路基板32的气体发生源31发生的气体39a的喷出,优选的是,如果是液状的脱模剂,则在局部设置不涂布脱模剂的部分;或者如果是片状的脱模剂,则进行设置孔等加工后来使用。
(实施方式4)
以下,采用图5~图7,对本发明的实施方式4的凸块形成方法进行说明。
图5A是在本发明的实施方式4中的凸块形成方法中采用的盖面材的俯视图、图5B是图5A的I-I线的剖视图。
首先,在图5A中,在例如由陶瓷等构成的盖面材41的表面上,在分别与电路基板(未图示出)的多个连接端子对应的位置上形成有例如由Cu、Sn等构成的多个接合区42。另外,在除接合区42以外的盖面材41的表面上涂布有对例如环氧树脂等热固化性树脂不具有粘接性的脱模剂43。
图5C是表示本发明的实施方式4中的盖面材的变形例的图5A的I-I线剖视图。根据该变形例,盖面材是由以涂布在除接合区62以外的面上的脱模剂63的厚度比接合区62厚地形成的盖面材61构成。
此处,盖面材只要能形成接合区就行,无论有机材料或无机材料等都可以。另外,如果在接合区以外涂布脱模剂,也可以采用金属材料。
以下,参照图6、图7,对采用本发明的实施方式4的盖面材而在电路基板上形成凸块的凸块形成方法进行说明。
首先,采用图6A-F对采用了图5B的盖面材41的凸块形成方法进行说明。
首先,如图6A所示,准备形成有多个连接端子53的第1电子元件即例如由芳香族聚酰胺环氧树脂构成的电路基板52。另外,在电路基板52中含有气体发生源51,该气体发生源由通过吸附或吸水而包含在电路基板52中的水分或例如丁基卡必醇等蒸发型气体发生剂构成。
接着,如图6B所示,在设置有多个连接端子53的电路基板52的表面上例如采用分配器等涂布焊料树脂组合物56,该焊料树脂组合物是通过例如在含有由乙二醇和马来酸酐及过氧化苯酰构成的热固化性树脂等的树脂55中均匀分散了焊料粉5a而得到的。
接着,如图6C所示,在焊料树脂组合物56的上表面上载置盖面材41。此时,将电路基板52上的连接端子53和盖面材41的接合区42分别相对置地搭接。
接着,如图6D所示,至少从电路基板52侧例如用加热器等加热电路基板52和焊料树脂组合物56。由此,在电路基板52中含有的气体发生源51即丁基卡必醇蒸发,其蒸气成为气体59a,从电路基板52的表面喷出到焊料树脂组合物56中。此时,气体59a的大部分从电路基板52的连接端子53以外的表面喷出。
另外,伴随着温度上升,焊料树脂组合物56的粘度下降,喷出的气体59a使焊料树脂组合物56对流。通过该对流,焊料粉5a自己集合在连接端子53及接合区42上。此时,气体59a在使焊料树脂组合物56流动后,作为排气59b从被电路基板52和盖面材41包围的外周的间隙排出到外部。
接着,如图6E所示,熔融了的焊料粉一边在连接端子53及接合区42上自己集合,与图2B所示的情况同样地形成熔敷焊料,一边生长。然后,连接端子53上的熔敷焊料和盖面材41的接合区42上的熔敷焊料接触。
然后,在熔敷焊料为熔融状态,并且焊料树脂组合物56中的树脂55固化而形成树脂层57的状态下剥离盖面材41。由于在盖面材41的除接合区42以外的表面上涂布有脱模剂43,所以可以容易地剥离固化的树脂层57。此外,由于熔敷焊料还处于熔融状态,所以形成具有通过焊料的表面张力从树脂层57表面突出的突起部60a的凸块60。
通过以上的工序,如图6F所示在剥离盖面材41后,通过熔敷焊料的固化来制作形成了凸块60的凸块安装体58,该凸块60具有比树脂层57的厚度厚且高度均匀的球面状的突起部60a。
根据上述实施方式4,通过设置在盖面材上的接合区,可提高焊料粉的自己集合的效率。
此外,利用上述方法形成的凸块60通过在后续的例如半导体芯片的倒装片安装工序中采用树脂层57作为接合间隔控制材,可以进行接合等的可靠性优异的安装。
另外,在上述实施方式4中,盖面材如果是具有脱模性、能形成金属的接合区的材料,就不特别需要涂布脱模剂,也可以只形成接合区。
以下,采用图7A-B对本发明的实施方式4中的凸块形成方法的变形例进行说明。图7A-B是采用了图5C的盖面材61的凸块形成方法。另外,图7A、B分别与图6E、F对应,其它的工序与图6相同。
首先,如图7A所示,与图6E同样,连接端子53上的熔敷焊料和盖面材61的接合区62上的熔敷焊料接触。此时,在盖面材61中由于脱模剂63的厚度比接合区62厚,因此熔敷焊料以从树脂层67突出的状态形成。
接着,如图7B所示,在剥离盖面材61后,通过熔敷焊料的固化,可制作形成了凸块65的凸块安装体68,该凸块65具有比树脂层67的厚度厚且高度均匀的球面状的突起部65a。
由此,能够根据脱模剂63的厚度来自由地设定凸块65的高度。另外,由于能够比树脂层67表面高地形成凸块65的突起部65a,因此能够制作与用其它工序进行的半导体芯片等的接合可靠性优异的倒装片安装体。
另外,在本发明的各实施方式中,焊料树脂组合物中的焊料粉只要在焊料层或凸块形成时最终经由熔融状态而形成就可以。即,只要在焊料树脂组合物通过气体发生对流前、对流中及自己集合后的任一阶段焊料粉熔融,以该状态形成焊料层或凸块就可以,并没有特别限定。
此外,在本发明的各实施方式中,对在电路基板上以膏状印刷涂布焊料树脂组合物的例子进行了说明,但也可以预先将焊料树脂组合物中的树脂半固化,作为预浸渍体状态的片材状夹在电路基板和盖面材之间来使用。
此外,更优选的是,焊料树脂组合物含有下述的树脂,该树脂在连接端子上形成凸块后可以通过清洗等从电路基板上容易地除去、加热时不固化、即使在冷却时也具有流动性。
此外,本发明的各实施方式中所用的焊料粉可采用Pb-Sn合金等以往的焊料,但并不局限于此。例如,从环境方面考虑,更优选使用近年来针对环境问题开发并使用的Sn-Ag、Sn-Ag-Cu、Sn-Bi-Ag-In、Sn-Bi-Zn或Sn-Bi-Ag-Cu等所谓的无铅焊料。
此外,在本发明的各实施方式中,虽然就采用环氧树脂及不饱和聚酯树脂作为焊料树脂组合物的树脂的例子进行了说明,但除此以外,也可以采用以聚丁二烯树脂、聚酰亚胺树脂、聚酰胺树脂以及氰酸酯树脂中的任何一种作为主要材料的树脂。
此外,作为本发明的各实施方式中的气体发生源,虽然就采用水分、或采用丁基卡必醇作为蒸发型气体发生剂、或采用氢氧化铝作为分解型气体发生剂的例子进行了说明,但并不局限于此。例如,作为蒸发型气体发生剂,也可以采用己烷、醋酸乙烯酯、异丙醇、醋酸丁酯、丙酸、乙二醇、N-甲基-2-吡咯烷酮、α-萜品醇、丁基卡必醇乙酸酯;或者作为加热时分解而产生H2O、CO2、N2等气体的分解型气体发生剂,也可以采用片钠铝石、偏硼酸铵、偏硼酸钡、偶氮甲酰胺(ADCA)、碳酸氢钠、氢氧化铝、铝酸钙、硼酸、N,N’-二亚硝基五亚甲基四胺(DPT)以及4,4’-氧双(苯磺酰肼)(OBSH)中的至少任何一种。另外,在上述气体发生剂内,进一步优选的是,在焊料树脂组合物的固化反应开始温度和固化温度之间具有沸点或分解温度,在沸点下或在分解温度下从电路基板喷出气体的气体发生剂。
此外,本发明的各实施方式中所用的含有气体发生源的电路基板,可按照以下方法来制作。
例如,在电路基板是芳香族聚酰胺环氧树脂基板时,将碳酸氢钠、氢氧化铝等粉末粒子调整到一定粒度,并作为填料以喷出气体量所必需的量混炼在用于浸渍芳香族聚酰胺无纺布的环氧树脂基材中,然后使其浸渍在芳香族聚酰胺无纺布中并进行压缩、加热固化,从而形成电路基板。
此外,在使通常的环氧树脂浸渍在芳香族聚酰胺无纺布中后,通过在形成布线的表面部分上涂布含有氢氧化铝等气体发生源的环氧树脂,从而也可以形成在厚度方向上气体发生源的含有密度不同的电路基板。由此,由于在电路基板的表面部分上集中地形成气体发生源,所以通过短时间的处理就能够得到足够的气体喷出,对于促进焊料粉的对流具有大的效果。
本发明的倒装片安装方法及凸块形成方法由于可通过从在电路基板中含有的气体发生源喷出的气体,使焊料树脂组合物中的焊料粉高效率地自己集合在连接端子等上并使其生长,因此在电路基板或半导体芯片等的安装领域中是有用的。

Claims (21)

1.一种倒装片安装方法,其用于将包含多个连接端子的第1电子元件和与所述连接端子对应地包含多个电极端子的第2电子元件电连接,其中,在所述第1电子元件上载置包含焊料粉和树脂的焊料树脂组合物;
所述第1电子元件的所述连接端子和所述第2电子元件的所述电极端子相对置地配置;
加热所述第1电子元件和所述焊料树脂组合物以使从包含在所述第1电子元件中的气体发生源喷出气体;
通过使所述气体在所述焊料树脂组合物中对流,从而使所述焊料粉在所述焊料树脂组合物中流动,使所述焊料粉自己集合在所述连接端子及所述电极端子上,从而使所述接连接端子及所述电极端子电连接。
2.如权利要求1所述的倒装片安装方法,其中,在使所述连接端子及所述电极端子电连接后,通过使所述树脂固化来使所述第1电子元件和所述第2电子元件粘接。
3.如权利要求1所述的倒装片安装方法,其中,所述气体发生源是在所述第1电子元件中含有的水分。
4.如权利要求1所述的倒装片安装方法,其中,所述气体发生源是在所述第1电子元件中含有的气体发生剂。
5.如权利要求4所述的倒装片安装方法,其中,所述气体发生剂是选自己烷、醋酸乙烯酯、异丙醇、醋酸丁酯、丙酸、乙二醇、N-甲基-2-吡咯烷酮、α-萜品醇、丁基卡必醇以及丁基卡必醇乙酸酯中的至少一种的蒸发型气体发生剂。
6.如权利要求4所述的倒装片安装方法,其中,所述气体发生剂是选自氢氧化铝、片钠铝石、偏硼酸铵、偏硼酸钡、偶氮甲酰胺(ADCA)、碳酸氢钠、铝酸钙、硼酸、N,N’-二亚硝基五亚甲基四胺(DPT)以及4,4’-氧双(苯磺酰肼)(OBSH)中的至少一种的分解型气体发生剂。
7.如权利要求4所述的倒装片安装方法,其中,所述第1电子元件是电路基板,所述第2电子元件是半导体芯片。
8.如权利要求7所述的倒装片安装方法,其中,所述气体发生剂在所述焊料树脂组合物的固化反应开始温度和固化温度之间具有沸点或分解温度,在所述沸点下或在所述分解温度下,从所述电路基板喷出所述气体。
9.如权利要求1所述的倒装片安装方法,其中,所述焊料树脂组合物的树脂是以环氧树脂、不饱和聚酯树脂、醇酸树脂、聚丁二烯树脂、聚酰亚胺树脂、聚酰胺树脂以及氰酸酯树脂中的任何一种作为主要材料的热固化性树脂。
10.一种凸块形成方法,其中,在包含多个连接端子的电路基板上载置包含焊料粉和树脂的焊料树脂组合物,在所述焊料树脂组合物的上表面上搭接盖面材;
加热所述电路基板和所述焊料树脂组合物以使从包含在所述电路基板中的气体发生源喷出气体;
通过使所述气体在所述焊料树脂组合物中对流,从而使所述焊料粉在所述焊料树脂组合物中流动,使所述焊料粉自己集合在所述连接端子上;
除去所述盖面材。
11.如权利要求10所述的凸块形成方法,其中,所述盖面材是由硅氧烷树脂、含氟树脂以及聚丙烯树脂中的任何一种构成的盖面材、或涂布了脱模剂的盖面材中的任何一种。
12.如权利要求10所述的凸块形成方法,其中,所述焊料树脂组合物中含有的树脂不发生加热固化且在冷却时具备流动性。
13.如权利要求10所述的凸块形成方法,其中,所述气体发生源是包含在所述电路基板中的水分。
14.如权利要求10所述的凸块形成方法,其中,所述气体发生源是在所述电路基板中含有的气体发生剂。
15.如权利要求14所述的凸块形成方法,其中,所述气体发生剂是选自己烷、醋酸乙烯酯、异丙醇、醋酸丁酯、丙酸、乙二醇、N-甲基-2-吡咯烷酮、α-萜品醇、丁基卡必醇以及丁基卡必醇乙酸酯中的至少一种的蒸发型气体发生剂。
16.如权利要求14所述的凸块形成方法,其中,所述气体发生剂是选自氢氧化铝、片钠铝石、偏硼酸铵、偏硼酸钡、偶氮甲酰胺(ADCA)、碳酸氢钠、铝酸钙、硼酸、N,N’-二亚硝基五亚甲基四胺(DPT)以及4,4’-氧双(苯磺酰肼)(OBSH)中的至少一种的分解型气体发生剂。
17.如权利要求10所述的凸块形成方法,其中,所述焊料树脂组合物的树脂是选自环氧树脂、不饱和聚酯树脂、醇酸树脂、聚丁二烯树脂、聚酰亚胺树脂、聚酰胺树脂以及氰酸酯树脂中的至少一种的热固化性树脂。
18.一种凸块形成方法,其中,在包含多个连接端子的电路基板的除所述连接端子以外的面上涂布脱模剂;
在所述电路基板上载置包含焊料粉和树脂的焊料树脂组合物,在所述焊料树脂组合物的上表面上搭接盖面材,
加热所述电路基板和所述焊料树脂组合物以使从包含在所述电路基板中的气体发生源喷出气体,
通过使所述气体在所述焊料树脂组合物中对流,从而使所述焊料粉在所述焊料树脂组合物中流动,使所述焊料粉自己集合在所述连接端子上;
使所述焊料树脂组合物的所述树脂热固化而形成树脂层;
从所述电路基板剥离所述盖面材和所述树脂层。
19.一种凸块形成方法,其中,在包含多个连接端子的电路基板上载置包含焊料粉和树脂的焊料树脂组合物,在所述焊料树脂组合物的上表面上在分别与所述电路基板的多个连接端子对应的位置,与所述连接端子相对置地形成由金属构成的接合区,并且在所述接合区以外的区域搭接涂布了脱模剂的盖面材;
加热所述电路基板和所述焊料树脂组合物以使从包含在所述电路基板中的气体发生源喷出气体;
通过使所述气体在所述焊料树脂组合物中对流,从而使所述焊料粉在所述焊料树脂组合物中流动,使所述焊料粉自己集合在所述连接端子上;
使所述焊料树脂组合物的所述树脂热固化而形成树脂层,
剥离所述盖面材。
20.如权利要求19所述的凸块形成方法,其中,所述脱模剂的厚度比所述接合区的厚度厚。
21.一种凸块形成方法,其中,在包含多个连接端子的电路基板上载置包含焊料粉和树脂的焊料树脂组合物,在所述焊料树脂组合物的上表面上搭接盖面材;
加热所述电路基板和所述焊料树脂组合物以使从包含在所述电路基板中的气体发生源喷出气体;
通过使所述气体在所述焊料树脂组合物中对流,从而使所述焊料粉在所述焊料树脂组合物中流动,使所述焊料粉自己集合在所述连接端子上;
在熔融了的所述焊料粉固化后,除去所述盖面材和所述树脂。
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Families Citing this family (22)

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Publication number Priority date Publication date Assignee Title
JP3955302B2 (ja) * 2004-09-15 2007-08-08 松下電器産業株式会社 フリップチップ実装体の製造方法
US7927997B2 (en) * 2005-03-15 2011-04-19 Panasonic Corporation Flip-chip mounting method and bump formation method
US7732920B2 (en) * 2005-03-28 2010-06-08 Panasonic Corporation Flip chip mounting body, flip chip mounting method and flip chip mounting apparatus
US20090085227A1 (en) * 2005-05-17 2009-04-02 Matsushita Electric Industrial Co., Ltd. Flip-chip mounting body and flip-chip mounting method
JP5085932B2 (ja) 2006-02-21 2012-11-28 パナソニック株式会社 実装体及びその製造方法
CN101411251B (zh) * 2006-03-28 2011-03-30 松下电器产业株式会社 凸块形成方法及凸块形成装置
WO2008075537A1 (ja) * 2006-12-18 2008-06-26 Panasonic Corporation 電極構造体およびバンプ形成方法
KR101067429B1 (ko) * 2008-04-03 2011-09-27 르네사스 일렉트로닉스 가부시키가이샤 반도체장치를 제조하기 위한 방법 및 이 방법에 의해 제조된 반도체장치
JP2010034504A (ja) * 2008-07-02 2010-02-12 Panasonic Corp 基板間の接続方法、フリップチップ実装体及び基板間接続構造
JP5277068B2 (ja) * 2008-07-14 2013-08-28 パナソニック株式会社 基板間の接続方法、フリップチップ実装体及び基板間接続構造
JPWO2011132658A1 (ja) * 2010-04-22 2013-07-18 積水化学工業株式会社 異方性導電材料及び接続構造体
JP5807221B2 (ja) * 2010-06-28 2015-11-10 アユミ工業株式会社 接合構造体製造方法および加熱溶融処理方法ならびにこれらのシステム
JP5587804B2 (ja) * 2011-01-21 2014-09-10 日本特殊陶業株式会社 電子部品実装用配線基板の製造方法、電子部品実装用配線基板、及び電子部品付き配線基板の製造方法
US9373595B2 (en) 2011-09-16 2016-06-21 Panasonic Intellectual Property Management Co., Ltd. Mounting structure and manufacturing method for same
US10784221B2 (en) * 2011-12-06 2020-09-22 Taiwan Semiconductor Manufacturing Company, Ltd. Method of processing solder bump by vacuum annealing
KR101940237B1 (ko) * 2012-06-14 2019-01-18 한국전자통신연구원 미세 피치 pcb 기판에 솔더 범프 형성 방법 및 이를 이용한 반도체 소자의 플립 칩 본딩 방법
WO2016015189A1 (en) * 2014-07-28 2016-02-04 GM Global Technology Operations LLC Systems and methods for reinforced adhesive bonding
JP5944979B1 (ja) * 2014-12-26 2016-07-05 千住金属工業株式会社 はんだ転写シート、はんだバンプ及びはんだ転写シートを用いたはんだプリコート方法
KR101637327B1 (ko) * 2015-05-15 2016-07-07 주식회사 루멘스 발광 소자 패키지, 백라이트 유닛, 조명 장치 및 발광 소자 패키지의 제조 방법
US9653411B1 (en) * 2015-12-18 2017-05-16 Intel Corporation Electronic package that includes fine powder coating
CN105609426B (zh) * 2016-01-21 2018-01-05 华中科技大学 一种用于低温焊接的免清洗纳米浆料制备方法
CN113016079B (zh) * 2019-10-18 2022-06-24 深圳市大疆创新科技有限公司 半导体芯片封装结构、封装方法及电子设备

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1123468A (zh) * 1994-07-11 1996-05-29 国际商业机器公司 使用柔性环氧树脂将散热器直接固定到芯片载体

Family Cites Families (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3839727A (en) 1973-06-25 1974-10-01 Ibm Semiconductor chip to substrate solder bond using a locally dispersed, ternary intermetallic compound
JPH0747233B2 (ja) 1987-09-14 1995-05-24 古河電気工業株式会社 半田析出用組成物および半田析出方法
JPH02251145A (ja) 1989-03-24 1990-10-08 Citizen Watch Co Ltd 突起電極形成方法
US5136365A (en) * 1990-09-27 1992-08-04 Motorola, Inc. Anisotropic conductive adhesive and encapsulant material
JPH05181155A (ja) 1991-12-30 1993-07-23 Casio Comput Co Ltd 半導体装置の製造方法
JPH06125169A (ja) 1992-10-13 1994-05-06 Fujitsu Ltd 予備はんだ法
JP3537871B2 (ja) 1993-07-05 2004-06-14 昭和電工株式会社 はんだコートおよびその形成方法
JPH0737325A (ja) 1993-07-22 1995-02-07 Matsushita Electric Ind Co Ltd ディスク再生装置
US6271110B1 (en) 1994-01-20 2001-08-07 Fujitsu Limited Bump-forming method using two plates and electronic device
DE4432774C2 (de) 1994-09-15 2000-04-06 Fraunhofer Ges Forschung Verfahren zur Herstellung meniskusförmiger Lotbumps
US5429293A (en) 1994-12-19 1995-07-04 Motorola, Inc. Soldering process
JPH0927516A (ja) 1995-07-12 1997-01-28 Nippondenso Co Ltd 電子部品の接続構造
US6448169B1 (en) 1995-12-21 2002-09-10 International Business Machines Corporation Apparatus and method for use in manufacturing semiconductor devices
DE19640192A1 (de) * 1996-09-30 1998-04-02 Bosch Gmbh Robert Verfahren zur Flip-Chip-Montage
US6609652B2 (en) 1997-05-27 2003-08-26 Spheretek, Llc Ball bumping substrates, particuarly wafers
JPH11145176A (ja) 1997-11-11 1999-05-28 Fujitsu Ltd ハンダバンプの形成方法及び予備ハンダの形成方法
JPH11186334A (ja) 1997-12-25 1999-07-09 Toshiba Corp 半導体実装装置及びその製造方法及び異方性導電材料
JP3996276B2 (ja) 1998-09-22 2007-10-24 ハリマ化成株式会社 ソルダペースト及びその製造方法並びにはんだプリコート方法
JP3565047B2 (ja) 1998-10-07 2004-09-15 松下電器産業株式会社 半田バンプの形成方法および半田バンプの実装方法
US6523736B1 (en) 1998-12-11 2003-02-25 Micron Technology, Inc. Methods and apparatus for forming solder balls
GB2389460A (en) 1998-12-22 2003-12-10 Nec Corp Mounting semiconductor packages on substrates
US6225206B1 (en) 1999-05-10 2001-05-01 International Business Machines Corporation Flip chip C4 extension structure and process
JP2000332055A (ja) 1999-05-17 2000-11-30 Sony Corp フリップチップ実装構造及び実装方法
US6295730B1 (en) 1999-09-02 2001-10-02 Micron Technology, Inc. Method and apparatus for forming metal contacts on a substrate
US6187450B1 (en) 1999-10-21 2001-02-13 General Electric Company Tip cap hole brazing and oxidation resistant alloy therefor
US6402013B2 (en) 1999-12-03 2002-06-11 Senju Metal Industry Co., Ltd Thermosetting soldering flux and soldering process
JP3423930B2 (ja) 1999-12-27 2003-07-07 富士通株式会社 バンプ形成方法、電子部品、および半田ペースト
JP2001329048A (ja) 2000-03-15 2001-11-27 Harima Chem Inc 封止充填剤用液状エポキシ樹脂組成物
JP2002026070A (ja) 2000-07-04 2002-01-25 Toshiba Corp 半導体装置およびその製造方法
US6348401B1 (en) 2000-11-10 2002-02-19 Siliconware Precision Industries Co., Ltd. Method of fabricating solder bumps with high coplanarity for flip-chip application
JP4502496B2 (ja) 2000-11-16 2010-07-14 富士通株式会社 Bga実装時におけるはんだ形状評価方法及びbga実装時におけるはんだ形状評価装置及びbga実装時におけるはんだ形状評価プログラムを収納したコンピュータ読み取り可能な記録媒体
JP4659262B2 (ja) 2001-05-01 2011-03-30 富士通セミコンダクター株式会社 電子部品の実装方法及びペースト材料
JP3693007B2 (ja) * 2001-11-20 2005-09-07 松下電器産業株式会社 電子部品実装方法
US6933221B1 (en) 2002-06-24 2005-08-23 Micron Technology, Inc. Method for underfilling semiconductor components using no flow underfill
US6846735B1 (en) 2002-09-05 2005-01-25 Bridge Semiconductor Corporation Compliant test probe with jagged contact surface
TWI244129B (en) 2002-10-25 2005-11-21 Via Tech Inc Bonding column process
JP3971995B2 (ja) * 2002-12-25 2007-09-05 日本電気株式会社 電子部品装置
US7524748B2 (en) 2003-02-05 2009-04-28 Senju Metal Industry Co., Ltd. Method of interconnecting terminals and method of mounting semiconductor devices
JP3769688B2 (ja) * 2003-02-05 2006-04-26 独立行政法人科学技術振興機構 端子間の接続方法及び半導体装置の実装方法
JP2004274000A (ja) 2003-03-12 2004-09-30 Matsushita Electric Ind Co Ltd 半田付け方法
WO2005096367A1 (ja) 2004-03-30 2005-10-13 Tamura Corporation 加熱装置及びリフロー装置,はんだバンプ形成方法及び装置
JP3964911B2 (ja) 2004-09-03 2007-08-22 松下電器産業株式会社 バンプ付き基板の製造方法
JP3955302B2 (ja) * 2004-09-15 2007-08-08 松下電器産業株式会社 フリップチップ実装体の製造方法
US20060108402A1 (en) 2004-11-19 2006-05-25 Tessera, Inc. Solder ball formation and transfer method
KR100958554B1 (ko) 2004-12-20 2010-05-17 센주긴조쿠고교 가부시키가이샤 땜납 프리코트 방법 및 전자기기용 워크
US7927997B2 (en) * 2005-03-15 2011-04-19 Panasonic Corporation Flip-chip mounting method and bump formation method
US7726545B2 (en) * 2005-03-16 2010-06-01 Panasonic Corporation Flip chip mounting process and bump-forming process using electrically-conductive particles as nuclei
WO2006103948A1 (ja) * 2005-03-29 2006-10-05 Matsushita Electric Industrial Co., Ltd. フリップチップ実装方法およびバンプ形成方法
WO2006126361A1 (ja) * 2005-05-24 2006-11-30 Matsushita Electric Industrial Co., Ltd. ハンダバンプ形成方法および半導体素子の実装方法
US7537961B2 (en) 2006-03-17 2009-05-26 Panasonic Corporation Conductive resin composition, connection method between electrodes using the same, and electric connection method between electronic component and circuit substrate using the same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1123468A (zh) * 1994-07-11 1996-05-29 国际商业机器公司 使用柔性环氧树脂将散热器直接固定到芯片载体

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JP特开2002-329745A 2002.11.15
JP特开2004-260131A 2004.09.16

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