KR200442383Y1 - Assembling structure of light emitting diode - Google Patents

Assembling structure of light emitting diode Download PDF

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Publication number
KR200442383Y1
KR200442383Y1 KR20070011825U KR20070011825U KR200442383Y1 KR 200442383 Y1 KR200442383 Y1 KR 200442383Y1 KR 20070011825 U KR20070011825 U KR 20070011825U KR 20070011825 U KR20070011825 U KR 20070011825U KR 200442383 Y1 KR200442383 Y1 KR 200442383Y1
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light emitting
emitting diode
reflector
lead frame
heat dissipation
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KR20070011825U
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Korean (ko)
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정화균
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주식회사 파워라이텍
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

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Abstract

본 고안은 방열 반사판을 이용한 반도체 리드프레임 및 그에 따른 고 방열 발광다이오드 소자의 어셈블리 구조에 관한 것이다. 본 발광다이오드 소자 구조는 한 쌍의 양극전극(Anode Lead)(4)과 음극전극(Cathode Lead Frame)(3)과, 상기 음극 양극전극(4)(3)의 상측에 Cu 또는 Al으로 구성된 방열반사판(61)은 그 주변이 나사산(62)(63)모양이며 그 표면의 전면에는 Ag로 도금되어 있다. 이로서 반사판 자체가 나사산 모양으로 되어 발광다이오드칩(1)에서 발생하는 열을 대기중으로 쉽게 방출함으로서, 종래의 사출반사판(61)을 갖는 발광다이오드 소자의 방열 문제등의 단점을 보완한 발광다이오드 소자의 어셈블리 구조를 제공하는 것이다. The present invention relates to a semiconductor lead frame using a heat dissipation reflector and an assembly structure of a high heat dissipation light emitting diode device. The light emitting diode device structure includes a pair of anode leads 4, a cathode lead frame 3, and heat dissipation consisting of Cu or Al on top of the cathode anode electrodes 4 and 3. The reflecting plate 61 is in the form of threads 62 and 63 in its periphery and is plated with Ag on the entire surface of the reflecting plate 61. As a result, the reflector itself becomes a threaded shape and thus easily emits heat generated in the light emitting diode chip 1 to the atmosphere, thereby making up for the disadvantages of heat dissipation problems of the light emitting diode element having the conventional emission reflector 61. To provide an assembly structure.

발광다이오드소자, 에폭시수지, 방열반사판, 사출반사판 Light emitting diode device, epoxy resin, heat radiation reflector, injection reflector

Description

발광다이오드 소자의 어셈블리 구조{ASSEMBLING STRUCTURE OF LIGHT EMITTING DIODE}Assembly structure of a light emitting diode device {ASSEMBLING STRUCTURE OF LIGHT EMITTING DIODE}

본 고안은 사출반사판을 사용을 배제하고 알루미늄(Al) 또는 구리(Cu)로 나사산 모양으로 형성된 방열반사판을 이형의 반도체 리드프레임에 절연접착제를 이용하여 방열반사판을 붙여서 만들고, 이 방열반사판의 하단부에 발광반도체 칩을 접착제로 붙여 주고 골드와이어로 음극, 양극 리드부에 전극을 연결하며, 방열반사판의 내부에 에폭시 또는 실리콘으로 몰드를 함으로서 방열반사판 자체가 방열구조와 광을 반사시켜주는 역할을 동시에 함으로서 방열이 우수한 발광다이오드 소자의 어셈블리 구조에 관한 것이다.The present invention eliminates the use of an injection reflector plate and makes a heat radiation reflector formed in a thread shape made of aluminum (Al) or copper (Cu) by attaching a heat radiation reflector using an insulating adhesive to a release semiconductor lead frame, and at the lower end of the heat reflector. By attaching a light emitting semiconductor chip with an adhesive and connecting electrodes to the cathode and anode leads with gold wires, and molding the epoxy or silicon inside the heat reflecting plate, the heat reflecting plate itself reflects the heat radiation structure and light. The present invention relates to an assembly structure of a light emitting diode device having excellent heat dissipation.

일반적으로 발광다이오드는 전기적인 신호를 광학적 신호로 변경해 주는 역할을 하는데, 이때 전기적 신호가 가해지면 발광다이오드 칩(Chip)은 빛과 열을 발산한다. 칩의 종류에 따라 청색(Blue), 적색(Red), 녹색(Green)의 발광파장을 발광한다.In general, the light emitting diode converts an electrical signal into an optical signal, and when the electrical signal is applied, the light emitting diode chip emits light and heat. Depending on the type of chip, blue, red, and green light emitting wavelengths are emitted.

종래에는 도 1에 도시된 바와 같이, 사출반사판(61)을 리드프레임에 부착시켜 주는 방식으로 발광다이오드를 구현하고 있다. 이때 발광다이오드 칩(1)은 접착제(211)를 이용하여 부착하여 주고, 골드와이어(5)를 이용하여 전극을 형성시켜주고, 발광다이오드의 상층부 사출반사판(61) 내부에 형광체가 섞어진 에폭시 또는 실리콘을 채워주는 방식으로 발광다이오드 소자를 만들었으나, 이는 사출반사판(61)을 사용함으로써 발광다이오드의 발생하는 빛을 효과적으로 외부에 전달해 주지 못하는 단점이 있어 발광다이오드의 신뢰성을 확보하기가 어려운 문제가 있었다. Conventionally, as illustrated in FIG. 1, the light emitting diode is implemented by attaching the injection reflector 61 to the lead frame. In this case, the light emitting diode chip 1 is attached using an adhesive 211, an electrode is formed using the gold wire 5, and an epoxy in which phosphors are mixed inside the injection reflector 61 of the upper layer of the light emitting diode. Although the light emitting diode device was made by filling the silicon, it was difficult to secure the reliability of the light emitting diode because the light emitted from the light emitting diode was not effectively transmitted to the outside by using the injection reflector 61. .

본 고안은 이와 같은 종래의 문제점을 해결하기 위하여 안출된 것으로서, 사출반사판을 사용하지 않고 나사산모양의 Al 또는 Cu로 컵을 형성한 반사판을 리드프레임의 절곡부에 절연접착제로 부착시키고, 이 방열반사판 하단부에 발광다이오드 칩을 부착하고 골드와이어로 전극을 형성시켜줌으로써 발광다이오드 칩에서 발생하는 열을 효과적으로 방출시켜서 광효율을 높이고 신뢰성을 얻을 수 있도록 하는 발광다이오드 소자의 어셈블리 구조를 제공하는데 있다.The present invention was devised to solve such a conventional problem, and attaches a reflector plate formed of a threaded Al or Cu without using an injection reflector to the bent portion of the lead frame with an insulating adhesive. By attaching a light emitting diode chip to a lower end and forming an electrode with a gold wire, it provides an assembly structure of a light emitting diode element that effectively emits heat generated from the light emitting diode chip to increase light efficiency and reliability.

상기 목적으로 달성하기 위한 본 고안에서는, 먼저 반도체 리드프레임을 에칭 또는 스탬핑(Stamping) 공정으로 전극부을 만들어 주고, 이 전극부의 양극, 음극부를 90°로 절곡하여 절곡부를 만들어 준다. 또한 나사산을 구비한 Al 또는 Cu로 된 방열반사판을 만들고, 이 방열반사판을 반도체 리드프레임의 90°절곡한 절곡부에 절연접착제를 이용하여 끼워 줌으로서 사출반사판을 없애고 방열반사판을 구비한 반도체 리드프레임을 만들 수 있다. 이로써 종래의 사출반사판을 붙여 주는 별도의 사출공정을 없애고 방열반사판을 삽입하는 공정을 부가시켜 줌으로써 방열효과가 우수한 리드프레임을 제공하는 것이다.In the present invention for achieving the above object, first, the electrode lead is made by etching or stamping a semiconductor lead frame, and the anode and cathode parts of the electrode part are bent at 90 ° to form a bent portion. In addition, a heat dissipation reflector made of Al or Cu with a screw thread is made, and the heat dissipation reflector is inserted into a bent portion 90 ° bent of the semiconductor lead frame by using an insulating adhesive to remove the ejection reflector and a semiconductor lead frame having a heat dissipation reflector. You can make This eliminates the separate injection process for attaching the conventional injection reflector plate and adds a process for inserting the heat radiation reflector plate to provide a lead frame excellent in heat dissipation effect.

위와 같이 제작된 방열반사판을 구비한 리드프레임에 발광다이오드 칩을 접 착하고 골드와이어로 전극을 형성시켜주고, 에폭시 또는 실리콘으로 몰드 시켜줌으로써 고휘도의 방열특성을 가지는 발광다이오드 소자의 어셈블리 구조를 만들 수 있다.By attaching a light emitting diode chip to a lead frame having a heat radiating reflector manufactured as described above, forming an electrode with a gold wire, and molding with epoxy or silicon, an assembly structure of a light emitting diode element having high luminance heat radiation characteristics can be made. .

이와 같은 본 고안의 발광다이오드 소자의 어셈블리 구조는 일반적인 사출 반사판을 리드프레임에 부착시켜주는 사출 공정을 생략할 수 있어 리드프레임의 사출금형 투자비를 줄여주는 효과가 있다. 또한 방열반사판을 나사산모양을 갖춘 Al 또는 Cu로 제작하여 방열 효과가 매우 뛰어난 특징이 있다. 또한 방열반사판의 표면을 Ag로 도금함으로서 발광다이오드 칩에서 방사되는 빛을 효과적으로 전방으로 방사시켜 줌으로서 광효율을 극대화하는 효과를 제공한다.The assembly structure of the LED device according to the present invention can omit the injection process of attaching a general injection reflector to the lead frame, thereby reducing the investment cost of the lead mold injection mold. In addition, the heat radiation reflector is made of Al or Cu having a thread shape, and has a very excellent heat radiation effect. In addition, since the surface of the heat radiation reflector is plated with Ag, the light emitted from the light emitting diode chip is effectively radiated forward, thereby maximizing light efficiency.

이하, 첨부된 도면에 의하여 본 고안을 상세하게 설명하면 다음과 같다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

도 2a, 2b, 2c는 본 고안에 의해 발광다이오드 소자를 정면도, 배면도, 측면도를 나타낸 요부단면도이고, 도 3a, 3b는 본 고안에 따른 반도체 리드프레임의 제1공정을 나타내는 정면도와 측면도이고, 도 4a, 4b, 4c는 본 고안의 제2공정에 따른 방열 반사판의 정면도와 측면도 및 배면도이고, 도 5a, 5b는 본 고안의 제3 공정도로서 방열 반사판이 리드프레임에 접착된 정면도 및 측면도이다.2A, 2B and 2C are main cross-sectional views showing a front view, a rear view, and a side view of a light emitting diode device according to the present invention, and FIGS. 3A and 3B are a front view and a side view showing a first step of a semiconductor lead frame according to the present invention; 4A, 4B, and 4C are front, side, and rear views of the heat dissipation reflector according to the second process of the present invention, and FIGS. 5A, 5B are front views of the heat dissipation reflector bonded to the lead frame as a third process diagram of the present invention; Side view.

상기 도 2a 내지 도 5b에 도시된 바와 같이 본 고안은, 알루미늄(Al) 또는 구리(Cu)의 소재로 방열효과를 극대화하기 위한 나사산(62)(63) 모양이 외측면에 형성된 방열반사판(6)과, 이 방열반사판(6)의 내측에 리드프레임에 형성된 절곡부(31)(41)를 끼울 수 있도록 구성한 홀(7)과 , 이 홀(7)에 끼워지고 상기 방열반사판(6)과 절연되면서 접착하기 위한 절연접착제(21)로 부착되는 리드프레임에 형성된 절곡부(31)(41)와, 이 리드프레임의 절곡부(31)(41)와 발광다이오드 칩(1)을 전기적으로 연결시켜 주는 골드와이어(5)와, 상기 방열반사판(6)의 내측에 채워지는 에폭시 또는 실리콘수지(8)로 구성되어 있다.As shown in FIG. 2A to FIG. 5B, the present invention is made of aluminum (Al) or copper (Cu), and the heat dissipation reflector 6 is formed on the outer surface of the threads 62 and 63 to maximize the heat dissipation effect. ), A hole 7 configured to fit the bent portions 31 and 41 formed in the lead frame inside the heat radiating reflector 6, and fitted into the hole 7 and the heat radiating reflecting plate 6. The bent portions 31 and 41 formed on the lead frame attached with the insulating adhesive 21 to be insulated and bonded, and the bent portions 31 and 41 of the lead frame and the light emitting diode chip 1 are electrically connected. It is composed of a gold wire (5) to be made, and an epoxy or silicone resin (8) filled inside the heat radiation reflecting plate (6).

도 3a, 3b는 본 고안에 따른 반도체 리드프레임(2)의 제1 공정도의 정면도와 측면도로서, 양극전극(Anode Pad)(4)과 음극전극(Cathode Lead Frame)(3)이 마련되고 이 음극, 양극전극(3)(4)의 연장선상에 90°로 절곡된 절곡부(31)(41)가 구성되어 있다.3A and 3B are front and side views of a first process diagram of the semiconductor lead frame 2 according to the present invention, in which an anode pad 4 and a cathode lead frame 3 are provided. The bent portions 31 and 41 are bent at 90 degrees on the extension lines of the anode electrodes 3 and 4.

도 4a, 4b, 4c는 본 고안의 제2 공정도에 의한 방열반사판의 정면도와 배면도 및 측면도이다.4A, 4B, and 4C are front, rear, and side views of the heat radiation reflector according to the second process diagram of the present invention.

도 4a, 4b, 4c에서와 같이 Al 또는 Cu로 구성된 방열반사판(6)의 구성도이다. 방열반사판(6)은 리드프레임의 절곡부(31)(41)와 결합을 할 수 있도록 구성된 홀(7)과, 방열반사판의 중심 내부에는 발광다이오드 칩을 부착시켜줄 수 있도록 하고 광이 효과적으로 전방으로 방사될 수 있도록 한 일정각도의 반사판(64)과, 방열효과를 극대화할 수 있도록 한 나사산(62)(63)으로 구성되어 있다.4A, 4B, and 4C are diagrams showing the heat radiation reflector 6 made of Al or Cu. The heat radiation reflector 6 has a hole 7 configured to be coupled to the bent portions 31 and 41 of the lead frame, and allows the light emitting diode chip to be attached to the inside of the center of the heat radiation reflector, and the light is effectively forwarded. It is composed of a reflecting plate 64 of a certain angle to be radiated, and threads 62 and 63 to maximize the heat dissipation effect.

도 5a, 5b는 본 고안에 의한 제3 공정도로서 방열반사판(6)이 리드프레임에 접착된 정면도 및 측면도이다.5A and 5B are front and side views in which the heat dissipation reflecting plate 6 is bonded to the lead frame as a third process drawing according to the present invention.

도 5a, 5b에서와 같이 반도체 리드프레임(2)의 절곡부(31)(41)에 절연접착제(21)를 이용하여 방열반사판(6)을 부착시켜 줌으로서 완성된다.5A and 5B, the heat dissipation reflecting plate 6 is attached to the bent portions 31 and 41 of the semiconductor lead frame 2 using the insulating adhesive 21.

도 1은 종래의 사출 반사판을 갖춘 발광다이오드 소자의 측면도이고,1 is a side view of a light emitting diode device having a conventional injection reflector;

도 2a, 2b, 2c는 본 고안에 따른 방열 발광다이오드 소자의 정면도, 배면도 및 측면도이고,2A, 2B and 2C are front, rear and side views of the heat dissipation light emitting diode device according to the present invention,

도 3a, 3b는 본 고안에 따른 반도체 리드프레임의 제1공정을 나타내는 정면도와 측면도이고,3A and 3B are front and side views illustrating a first step of a semiconductor lead frame according to the present invention;

도 4a, 4b, 4c는 본 고안의 제2공정에 따른 방열 반사판의 정면도와 배면도 및 측면도이고,4A, 4B and 4C are front, rear and side views of the heat dissipation reflector according to the second process of the present invention,

도 5a, 5b는 본 고안의 제3 공정도로서 방열 반사판이 리드프레임에 접착된 정면도 및 측면도이다.5A and 5B are front and side views in which a heat dissipation reflector is attached to a lead frame as a third process diagram of the present invention.

-도면 중 주요 부분에 대한 부호의 설명-Explanation of symbols on the main parts of the drawings

1; 발광다이오드칩 3; 음극리드One; Light emitting diode chip 3; Cathode Lead

4; 양극리드 5; 골드와어이4; Anode lead 5; Gold Wai

6; 방열반사판(Cu 또는 Al 및 그 합금 반사판)6; Heat reflector (Cu or Al and its alloy reflector)

7; 홀 8; 에폭시/실리콘수지7; Hole 8; Epoxy / silicone resin

21; 절연접착제 31, 41; 절곡부21; Insulating adhesives 31 and 41; Bend

삭제delete

삭제delete

61; 사출반사판 64; 방열반사판의 반사부61; Injection reflector 64; Reflecting part of the heat radiation reflector

211; 접착제 211; glue

Claims (6)

알루미늄(Al) 또는 구리(Cu)의 소재로 방열 효과를 극대화하기 위한 나사산(62)(63) 모양이 외측면에 형성된 방열반사판(6)과, 방열반사판(6)의 내측은 리드프레임에 형성된 절곡부(31)(41)를 끼울 수 있도록 구성한 홀(7)과, 이 홀(7)에 끼워지고 절연접착제(21)로 상기 방열반사판(6)과 전기적으로 절연되면서 접착되는 리드프레임에 형성된 절곡부(31)(41)와, 이 리드프레임의 절곡부(31)(41)와 발광다이오드 칩(1)을 전기적으로 연결시켜 주는 골드와이어(5)와, 에폭시 또는 실리콘수지(8)로 방열반사판 내측에 몰딩되어진 발광다이오드 소자의 어셈블리 구조.The heat radiation reflecting plate 6 and the heat radiating reflecting plate 6 formed on the outer surface of the thread 62 and 63 for maximizing heat dissipation effect by using a material of aluminum (Al) or copper (Cu) are formed in the lead frame. A hole 7 configured to fit the bent portions 31 and 41 and a lead frame fitted into the hole 7 and electrically insulated from the heat radiation reflecting plate 6 by an insulating adhesive 21 and bonded to the heat radiating reflector 6. With the bent parts 31 and 41, the gold wire 5 which electrically connects the bent parts 31 and 41 of this lead frame with the light emitting diode chip 1, and the epoxy or silicone resin 8, Assembly structure of a light emitting diode device molded inside a heat radiation reflector. 청구항 1에 있어서,The method according to claim 1, 상기 홀과 절곡부는, 다수개 형성되고, 형성된 절곡부에 발광다이오드 칩이 장착되는 것을 특징으로 하는 발광다이오드 소자의 어셈블리 구조.The hole and the bent portion is formed in a plurality, the light emitting diode chip assembly structure, characterized in that the bent portion is mounted. 청구항 1에 있어서,The method according to claim 1, 상기 에폭시 또는 실리콘수지 중 어느 하나에 형광체 수지를 포함하여 이루어지는 것을 특징으로 하는 발광다이오드 소자의 어셈블리 구조.Assembly structure of a light emitting diode device comprising a phosphor resin in any one of the epoxy or silicone resin. 삭제delete 삭제delete 청구항 1에 있어서,The method according to claim 1, 상기 방열반사판의 내측면에 형성된 반사판(64)은, 표면이 일정두께의 은(Ag)으로 도금되어진 것을 특징으로 하는 발광다이오드 소자의 어셈블리 구조.The reflective plate (64) formed on the inner surface of the heat radiation reflecting plate has a surface plated with silver (Ag) having a predetermined thickness.
KR20070011825U 2007-07-18 2007-07-18 Assembling structure of light emitting diode KR200442383Y1 (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR200454785Y1 (en) 2010-12-29 2011-07-28 (주)유영지앤아이 LED array package
US8519426B2 (en) 2010-08-09 2013-08-27 Lg Innotek Co., Ltd. Light emitting device and lighting system having the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8519426B2 (en) 2010-08-09 2013-08-27 Lg Innotek Co., Ltd. Light emitting device and lighting system having the same
US9041013B2 (en) 2010-08-09 2015-05-26 LG Innotek., Ltd. Light emitting device and lighing system having the same
KR200454785Y1 (en) 2010-12-29 2011-07-28 (주)유영지앤아이 LED array package

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