KR200373718Y1 - High Brightness LED With Protective Function of Electrostatic Damage - Google Patents

High Brightness LED With Protective Function of Electrostatic Damage Download PDF

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Publication number
KR200373718Y1
KR200373718Y1 KR20040026925U KR20040026925U KR200373718Y1 KR 200373718 Y1 KR200373718 Y1 KR 200373718Y1 KR 20040026925 U KR20040026925 U KR 20040026925U KR 20040026925 U KR20040026925 U KR 20040026925U KR 200373718 Y1 KR200373718 Y1 KR 200373718Y1
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South Korea
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reflector
esd
emitting diode
electrostatic discharge
light emitting
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KR20040026925U
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Korean (ko)
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박종호
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주식회사 티씨오
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Priority to KR20040026925U priority Critical patent/KR200373718Y1/en
Application granted granted Critical
Publication of KR200373718Y1 publication Critical patent/KR200373718Y1/en
Priority to JP2005267552A priority patent/JP2006093697A/en
Priority to CN 200510103400 priority patent/CN100543985C/en
Priority to TW94132448A priority patent/TWI362762B/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light-emitting diode, configured for solving the problem of weakness with respect to electrostatic discharge impacts, in a chip of an InGaN/GaN-based light-emitting diode, which is a light source in an Al<SB>2</SB>O<SB>3</SB>substrate structure. <P>SOLUTION: The method of manufacturing a high-luminance light-emitting diode that is resistant to electrostatic discharge impact comprises soldering of an electrostatic-discharge-impact protective element on a lead frame with cream solder, followed by forming of a reflection cup, having a reflector on the surface thereof by means of transfer mold technique, using white TiO<SB>2</SB>-suspended thermosetting resin; die-bonding and wire-bonding the InGaN/GaN-based light-emitting chips on die pads for the light-emitting diodes interior of the reflection cup, having a reflector on the surface thereof; filling the inside of the reflection cup, having a reflector on the surface thereof with light-transmitting epoxy resin; and thereafter individuating through sawing or trimming and forming processes. <P>COPYRIGHT: (C)2006,JPO&amp;NCIPI

Description

정전기 방전 충격에 대한 보호 기능이 내장된 고휘도 발광다이오드{High Brightness LED With Protective Function of Electrostatic Damage}High Brightness LED With Protective Function of Electrostatic Damage

본 고안은 정전기 방전(ESD) 충격 발생시 InGaN,GaN계 발광다이오드 칩(Chip)을 보호하기 위한 것으로서, 더욱 상세하게는 은도금을 한 다수열의 리드프레임의 정전기 방전(ESD) 충격 보호소자용 다이 패드면 바닥에 정전기 충격 방전(ESD) 충격 보호소자{반도체 저항소자(Varistor) 또는 정전압 다이오드(Zener-Diode)}를 크림솔더(Cleam Solder)로 실장한 후, 백색 열경화성수지(TiO2)로 트랜스퍼몰드(Transfer Mold)방식의 반사판(Reflector)을 만들어, 이 반사판 내부의 발광다이오드 다이패드(Die Pad)부에 InGaN, GaN계의 발광다이오드 칩을 다이 본딩·와이어 본딩을 하고, 반사판 내부에 광 투과 에폭시 수지를 채운 후 소윙(Sawing) 공정 또는 트리밍(Trimming)과 포밍(Forming)공정을 통하여 개별화함으로서 정전기 방전(ESD) 충격에 강한 정전기 방전(ESD) 충격 보호 기능이 내장된 고휘도 발광다이오드에 관한 것이다.The present invention is to protect the InGaN, GaN-based light emitting diode chip (Chip) in the event of electrostatic discharge (ESD) impact, more specifically, the bottom surface of the die pad for electrostatic discharge (ESD) impact protection device of a plurality of silver plated lead frame Electrostatic shock discharge (ESD) shock protection device (semiconductor resistance element (Varistor) or constant voltage diode (Zener-Diode)} is mounted in a cream solder, and then transferred to a white thermosetting resin (TiO 2 ) Mold-type reflector is made, die-bonding and wire-bonding InGaN and GaN-based light emitting diode chips to the light emitting diode die pad portion inside the reflecting plate, and a light transmitting epoxy resin is applied inside the reflecting plate. High brightness with built-in electrostatic discharge (ESD) impact protection against electrostatic discharge (ESD) impact by individualizing through filling, sawing or trimming and forming It relates to a photodiode.

종래의 정전기 방전(ESD) 충격 보호용 발광다이오드의 구성은 도 1a, 1b에 도시된 바와 같다.The configuration of a conventional electrostatic discharge (ESD) impact protection light emitting diode is shown in Figures 1a, 1b.

도 1a는 플라스틱(열가소성)사출재질(92)로 구성되어진 표면에 반사판을 가진 반사컵(91)이 형성된 리드프레임(Lead Frame)과 전압을 인가하면 빛을 발산하는 InGaN, GaN계 칩(10)과, 상기 InGaN, GaN계 칩(10)에 전압을 인가하기 위한 도전성 금속재의 음극 및 양극 리드(4)(5)로 이루어지고, 상기 칩(10)은 음극 리드(4)의 끝단에 형성된 다이 패드(Die pad)상에 도전성 은(Ag) 접착제로 부착됨과 동시에, 양극 리드부분 끝단의 패드(Pad)부분에 정전압다이오드칩(Zener Diode Chip)(Z)을 은(Ag) 접착제로 부착함과 동시에 음극, 양극 리드(4)(5)의 끝단과 와이어(11)로 본딩되어 음극 및 양극 리드(4)(5) 사이에서 전기적으로 접속된 구성이다.1A is a lead frame in which a reflecting cup 91 having a reflecting plate is formed on a surface made of a plastic (thermoplastic) injection material 92 and an InGaN and GaN-based chip 10 that emits light when a voltage is applied thereto. And a cathode and an anode lead (4) (5) made of a conductive metal material for applying a voltage to the InGaN and GaN-based chip (10), wherein the chip (10) is formed at the end of the cathode lead (4). While attaching a conductive silver (Ag) adhesive on the pad, and attaching a constant voltage diode chip (Z) to the pad portion of the end of the anode lead portion with a silver (Ag) adhesive At the same time, the cathode and anode leads 4 and 5 are bonded to the wire 11 and electrically connected between the cathode and anode leads 4 and 5.

또한, 도 1b는 플라스틱(열가소성) 사출 재질(92)로 구성되어진 표면에 반사판을 가진 반사컵(91)이 형성된 리드프레임(Lead Frame)과, 전압을 인가하면 빛을 발산하는 InGaN, GaN계 칩(10)과, 상기 InGaN, GaN계 칩(10)에 전압을 인가하기 위한 도전성 금속재의 음극 및 양극 리드(4)(5)로 이루어지고, 정전압다이오드칩(Zener Diode Chip)(Z)을 음극 리드(4)의 끝단에 형성된 다이 패드(Die pad)상에 도전성 은(Ag) 접착제로 부착함과 동시에, InGaN, GaN계 발광다이오드칩(Chip)(10)을 골드범프(Au Bump), 또는 솔더범프(Solder Bump)로 정전압다이오드칩(Zener Diode Chip)(Z) 상부면에 부착한 후 음극, 양극 리드(4)(5)의 끝단과 와이어(11)로 본딩되어 음극 및 양극 리드 (4)(5) 사이에서 전기적으로 접속된 구성이다.In addition, FIG. 1B is a lead frame in which a reflecting cup 91 having a reflecting plate is formed on a surface made of a plastic (thermoplastic) injection material 92, and an InGaN and GaN-based chip that emits light when a voltage is applied. And a cathode and an anode lead (4) (5) made of a conductive metal material for applying a voltage to the InGaN and GaN-based chip (10), and the cathode diode chip (Z) is cathode. While attaching a conductive silver (Ag) adhesive on a die pad formed at the end of the lead 4, the InGaN, GaN-based light emitting diode chip (10) is a gold bump (Au Bump), or After attaching to the upper surface of the Zener Diode Chip (Z) with a solder bump, it is bonded to the ends of the negative electrode and the positive lead (4) (5) and the wire (11) to the negative electrode and the positive lead (4 It is a structure electrically connected between (5).

이와 같은 2가지 형태(Model)의 기술처럼 공정 진행 후, 상기 칩(10)(Z)을 외부로부터 보호하기 위해 절연재질의 광투과에폭시(15)로 몰딩하되, 음극 및 양극 리드(4)(5)의 다른 끝단의 일부가 외부로 노출되도록 하여 외부에서 칩(10)으로 전압을 인가할 수 있도록 구성된다.After the process proceeds as in the technique of the two types (Model) as described above, in order to protect the chip (10) (Z) from the outside to be molded with an insulating light transmitting epoxy 15, the cathode and anode lead (4) ( A part of the other end of 5) is exposed to the outside so that the voltage can be applied to the chip 10 from the outside.

외부로 노출된 발광다이오드의 음극 및 양극 리드(4)(5)를 사용하고자 하는 회로와 전기적으로 접속시키게 되면, 음극 및 양극 리드(4)(5)를 통해 칩(10)으로 전원이 인가됨으로써 광 반도체 소자인 칩(10)이 발광되어 기능을 수행할 수 있는 것이며, 몰딩(15)은 통상 투명에폭시수지(Epoxy)를 이용하여 작업하고, 발광다이오드칩(10)의 종류에 따라 녹색, 청색 또는 백색으로 제조된다.When the cathode and anode leads 4 and 5 of the light emitting diode exposed to the outside are electrically connected to the circuit to be used, power is applied to the chip 10 through the cathode and anode leads 4 and 5. The chip 10, which is an optical semiconductor device, emits light and may perform a function. The molding 15 generally works by using transparent epoxy resin, and may be green or blue depending on the type of the light emitting diode chip 10. Or white.

그러나 위와 같이 정전압다이오드칩(Zener Diode Chip)(Z)을 플라스틱 사출 재질(92)의 표면에 반사판(Refector)을 가진 반사컵(91) 내부에 실장한 구조는 InGaN, GaN계 발광다이오드(10)에서 방사하는 빛을 정전압다이오드(Zener Diode)가 빛을 흡수하거나 산란시킴으로서 방사 방향으로의 빛의 방사를 방해함으로서 최소 15%이상의 휘도가 저하되는 단점이 있다.However, as described above, the structure in which the constant voltage diode chip (Z) is mounted inside the reflecting cup 91 having a reflector on the surface of the plastic injection material 92 is InGaN, GaN-based light emitting diode 10. The light emitted by the constant-voltage diode (Zener Diode) absorbs or scatters the light, which hinders the emission of light in the radial direction, which has a disadvantage in that brightness of at least 15% is lowered.

또한, 열가소성 재질인 플라스틱사출재질(92)은 표면에 반사판을 가진 반사컵(91)의 재질로 사용하는데 고온의 발광다이오드의 제조 공정에서 변색 및 신뢰성 저하를 유발시키며, 열에 약한 특성 때문에 발광다이오드 칩(Chip)(10) 또는 정전압다이오드칩(Zener Diode Chip)(Z)을 저온으로 융착이 가능한 은(Ag)접착제를 이용하여 부착하는 방법으로만 제조하여야 하는 단점이 있어 공정상의 생산 능력을 떨어뜨리고 순전압(VF-Forward Voltage)을 증가시키는 문제점을 발생시키기도 한다.In addition, the plastic injection material 92, which is a thermoplastic material, is used as a material of the reflecting cup 91 having a reflector on the surface, which causes discoloration and deterioration in the manufacturing process of the high temperature light emitting diode, and the light emitting diode chip due to heat weakness. (Chip) (10) or a constant voltage diode chip (Zener Diode Chip) (Z) has to be manufactured only by attaching using a silver (Ag) adhesive that can be fused at low temperatures, which reduces the production capacity of the process It may also cause a problem of increasing the forward voltage (VF).

또한, 열가소성 사출재질의 표면에 반사판을 가진 반사컵(91)부분에 광투과성에폭시수지(15)를 채움으로서 발광다이오드소자의 골드와이어(Gold Wire)의 전극을 단락시키는 문제가 있다.In addition, there is a problem of shorting the electrode of the gold wire of the light emitting diode element by filling the transparent epoxy resin 15 in the portion of the reflecting cup 91 having the reflecting plate on the surface of the thermoplastic injection-molded material.

본 고안은 종래의 InGaN, GaN계의 발광다이오드 소자가 지닌 정전기 방전(ESD) 충격에 매우 약한 제반 문제점을 해결하기 위한 것으로서, 수천 볼트의 정전기 방전(ESD) 충격이 발생할 시 InGaN, GaN계의 칩(Chip)에 직접적인 충격이 가해지지 않고 정전기 방전(ESD) 충격 발생으로 인한 불량률을 획기적으로 줄일 수 있으며, InGaN, GaN계의 발광다이오드 칩(Chip)을 은(Ag)수지(Epoxy)로 접착하지 않고 고온의 유텍티크본딩(Eutectic Bonding)방법으로 작업을 할 수 있어 생산 능력을 향상시키며, 순전압(Forward Voltage-Vf)을 낮출 수 있도록 하고, 발광다이오드칩(Chip)에서 방사되는 빛을 간섭하지 않으므로 발광다이오드의 휘도를 향상 시킬 수 있는 정전기 방전(ESD) 충격에 대한 보호 기능이 내장된 고휘도 발광다이오드를 제공하는데 있다.The present invention is to solve all the problems that are very weak to the electrostatic discharge (ESD) impact of the conventional InGaN, GaN-based light emitting diode devices, and InGaN, GaN-based chip when an electrostatic discharge (ESD) impact of thousands of volts It is possible to drastically reduce the defect rate caused by electrostatic discharge (ESD) impact without directly impacting the chip, and do not bond InGaN and GaN-based LED chips with silver (Eg) epoxy. It can work by high temperature Eutectic Bonding method to improve production capacity, lower forward voltage-Vf, and do not interfere with light emitted from LED chip. Therefore, to provide a high brightness light emitting diode with a built-in protection against electrostatic discharge (ESD) impact that can improve the brightness of the light emitting diode.

본 고안의 다른 목적은 발광다이오드칩(Chip)에 열적 스트레스(Stress)를 주지 않기 때문에 고열로 인해 발생되는 문제를 지니지 않는 발광다이오드소자를 제조할 수 있는 정전기 방전(ESD) 충격에 대한 보호 기능이 내장된 고휘도 발광다이오드를 제공하는데 있다.Another object of the present invention is to provide a protection against electrostatic discharge (ESD) impact that can produce a light emitting diode device that does not have a problem caused by high heat because it does not give thermal stress to the LED chip (Chip) To provide a built-in high brightness light emitting diode.

이러한 목적을 달성하기 위한 본 고안에 따른 LED광 반도체 소자는 은도금을 한 다수열의 리드프레임의 다이패드면 바닥에 정전기 방전(ESD) 충격 보호소자{반도체 저항소자(Varistor) 또는 정전압 다이오드(Zener-Diode)}를 크림솔더(Cleam Solder)로 실장한 후, TiO2계 백색 열경화성수지를 트랜스퍼몰드(Transfer Mold) 방식으로 사출하여 표면에 반사판(Reflector)을 가진 반사컵(91)을 만들고, 이 표면에 반사판(Reflector)을 가진 반사컵(91) 내부의 발광다이오드다이패드(Die Pad)부에 InGaN, GaN계의 발광다이오드 칩을 다이 본딩·와이어 본딩을 하고, 표면에 반사판을 가진 반사컵(91) 내부에 광 투과 에폭시 수지를 채운 후 소윙(Sawing)공정 또는 트리밍(Trimming)과 포밍공정(Forming)을 통하여 개별화하는 공정을 거쳐 제조된다.LED optical semiconductor device according to the present invention for achieving this purpose is the electrostatic discharge (ESD) impact protection device (semiconductor resistance element (Varistor) or constant-voltage diode (Zener-Diode) on the bottom of the die pad surface of the lead frame of a plurality of silver plate )} Is mounted with a cream solder, and then a TiO 2 -based white thermosetting resin is injected by a transfer mold method to form a reflecting cup 91 having a reflector on the surface, and Die bonding and wire bonding of InGaN and GaN based light emitting diode chips to a light emitting diode die pad in a reflecting cup 91 having a reflector, and a reflecting cup 91 having a reflecting plate on the surface thereof. After filling the light transmitting epoxy resin inside, it is manufactured through a process of individualization through a sawing process or trimming and forming process.

도 1a는 종래의 정전압 다이오드(Zener Diode Chip)를 발광원인 LED 칩의 수평방향으로 내장한 발광다이오드의 구조를 도시한 요부 종단면도이고,FIG. 1A is a longitudinal sectional view showing main parts of a light emitting diode having a conventional constant voltage diode (Zener Diode Chip) embedded in a horizontal direction of an LED chip as a light emitting source;

도 1b는 종래의 정전압 다이오드를 발광원인 LED 칩(Chip)의 수직방향으로 내장한 발광다이오드의 구조를 도시한 요부 종단면도이고,FIG. 1B is a longitudinal sectional view showing main parts of a light emitting diode having a conventional constant voltage diode embedded in a vertical direction of an LED chip as a light emitting source.

도 2는 본 고안에 따른 정전기 방전(ESD) 충격 보호 소자{반도체 저항소자(Varistor) 또는 정전압 다이오드(Zener-Diode)}를 리드프레임의 상부면(발광다이오드 칩과 동일 평면상)에 삽입한 발광다이오드의 구성도로서,2 is a light emission in which an electrostatic discharge (ESD) impact protection device (semiconductor resistance element (Varistor) or constant voltage diode (Zener-Diode)) according to the present invention is inserted into an upper surface (coplanar with a light emitting diode chip) of a lead frame. As a schematic diagram of a diode,

(a)는 일부단면 평면도, (b)는 일부단면 정면도, (c)는 일부단면 측면도,(a) is a partial cross section plan view, (b) is a partial cross section front view, (c) is a partial cross section side view,

(d)는 회로도이고,(d) is a circuit diagram,

도 3은 본 고안의 다른 실시에 따른 정전기 방전(ESD) 충격 보호 소자{반도체 저항소자(Varistor) 또는 정전압 다이오드(Zener-Diode)}를 리드프레임의 하부면(발광다이오드 칩의 반대 방향)에 삽입한 발광다이오드의 구성도로서,3 is a diagram illustrating an electrostatic discharge (ESD) impact protection device (a semiconductor resistor or a diode) according to another embodiment of the present invention, inserted into a lower surface of a lead frame (the opposite direction of a light emitting diode chip). As a schematic diagram of a light emitting diode,

(a)는 일부단면 평면도, (b)는 일부단면 정면도, (c)는 회로도이고,(a) is a partial sectional plan view, (b) is a partial sectional front view, (c) is a circuit diagram,

도 4은 본 고안의 또 다른 실시에 따른 발광다이오드의 구성도로서,4 is a configuration diagram of a light emitting diode according to another embodiment of the present invention,

(a)는 일부단면 평면도, (b)는 일부단면 정면도, (c)는 일부단면 측면도,(a) is a partial cross section plan view, (b) is a partial cross section front view, (c) is a partial cross section side view,

(d)는 회로도이고,(d) is a circuit diagram,

도 5는 본 고안의 또 다른 실시에 따른 발광다이오드의 구성도로서,5 is a configuration diagram of a light emitting diode according to another embodiment of the present invention,

(a)는 일부단면 평면도, (b)는 일부단면 정면도, (c)는 일부단면 측면도,(a) is a partial cross section plan view, (b) is a partial cross section front view, (c) is a partial cross section side view,

(d)는 회로도이고,(d) is a circuit diagram,

도6,7,8은 본 고안의 실시를 위한 부분별 공정을 나타내는 평면도 및 요부 정면도이다.6, 7, and 8 are a plan view and a main part front view showing a part-by-part process for carrying out the present invention.

* 도면의 주요 부분에 대한 부호의 설명** Explanation of symbols for main parts of the drawing

1 : 반도체용 리드프레임{Lead Frame(Copper Substrate)}1: Lead Frame for Semiconductor {Lead Frame (Copper Substrate)}

2 : 관통홀2: through hole

3 : 발광 다이오드 칩(InGaN, GaN계)의 다이패드(Die Pad)부3: die pad part of light emitting diode chip (InGaN, GaN type)

4 : 발광다이오드 음극리드(Cathode Lead)부4: Light emitting diode cathode lead part

5 : 발광다이오드 양극리드(Anode Lead)부5: light emitting diode anode lead part

6 : 하프엣칭{Half Etching(or Half Stamping)}부6: Half Etching (or Half Stamping) part

7 : 정전기 방전(ESD) 충격 보호소자(Varistor, Zener Diode)7: Electrostatic Discharge (ESD) Shock Protection Device (Varistor, Zener Diode)

71 : 정전기 방전(ESD) 충격 보호소자(Varistor, Zener Diode) 패드부71: ESD protection pad (Varistor, Zener Diode) pad portion

Z : 정전압다이오드칩(Zener Diode Chip)Z: Zener Diode Chip

8 : 크림솔더(Cleam Solder)8: Cream Solder

9 : 백색 TiO2열경화성수지(Silica 50%이상 함유한 에폭시 수지)9: White TiO 2 thermosetting resin (epoxy resin containing 50% or more of silica)

91 : 표면에 반사판(Reflector)을 가진 반사컵92 : 열 가소성 수지 (Plastic 재질)91: Reflective cup with reflector on the surface 92: Thermoplastic (Plastic material)

10 : InGaN, GaN계 발광다이오드 칩 11 : 골드 와이어10 InGaN, GaN-based light emitting diode chip 11: Gold wire

12 : 파장변환 형광체 13 : SiO2재질 그라스(Grass)12 wavelength converting phosphor 13 SiO 2 material glass

14 : 에어층(공기층) 15 : 광투과 에폭시 수지14 air layer (air layer) 15 light transmitting epoxy resin

이하 첨부된 도면을 참조로 본 고안에 광 반도체 소자를 설명하기로 한다. 도 2a,2b,2c,2d는 본 고안의 일 실시예에 따른 정전기 방전(ESD) 충격 보호소자{반도체 저항소자(Varistor) 또는 정전압 다이오드(Zener-Diode)}를 내장하여 정전기 방전(ESD) 충격으로 인한 불량을 줄일 수 있는 발광다이오드의 내부구조와 이에 따른 극성을 도시한 도면 및 회로도이다.Hereinafter, an optical semiconductor device will be described in the present invention with reference to the accompanying drawings. 2A, 2B, 2C, and 2D illustrate an electrostatic discharge (ESD) impact by embedding an electrostatic discharge (ESD) impact protection device (a semiconductor resistor (Varistor) or a constant voltage diode (Zener-Diode)) according to an embodiment of the present invention. The internal structure of the light emitting diode and the polarity thereof, which can reduce the defect caused by the present invention, are shown in the drawings and the circuit diagram.

도면에 도시된 바와 같이 본 고안에 따른 정전기 방전 충격 보호소자를 내장한 InGaN, GaN계 발광다이오드의 구성은 한 쌍의 양극리드(Anode Lead)(5)과 음극리드(Cathode Lead)(4)으로 이루어진 리드프레임(1)과, 상기 음극·양극 리드(4)(5)의 상측에 TiO2계 백색열경화성수지(9)로 만들어진 표면에 반사판(Reflector)을 가진 반사컵(91)과, 이 TiO2계 백색열경화성수지(9) 내부에 정전기 방전(ESD) 충격보호를 위한 정전기 방전(ESD) 충격 보호소자(7){반도체 저항소자(Varistor) 또는 정전압 다이오드(Zener-Diode)}와, 음극리드 부분의 다이패드(Die Pad)컵(3) 부분에 부착되어 있는 GaN, InGaN계의 칩(Chip)(10)과, 상기 양극, 음극 리드(5)(4)와 발광다이오드 칩(10)의 통전을 위한 통전 와이어(11)와, 상기 TiO2계 백색열경화성수지(9)로 만들어진 표면에 반사판(Reflector)을 가진 반사컵(91) 내부에 광 투과성 에폭시 수지(15)가 몰딩 되어 이루어져 있다.As shown in the figure, the configuration of the InGaN and GaN-based light emitting diodes incorporating an electrostatic discharge impact protection device according to the present invention includes a pair of anode leads 5 and cathode leads 4. And a reflecting cup 91 having a reflector on a surface made of a TiO 2 -based white thermosetting resin 9 on the upper side of the lead frame 1 and the cathode and anode leads 4 and 5. Electrostatic discharge (ESD) impact protection element 7 (semiconductor resistance element (Varistor) or constant voltage diode (Zener-Diode)) for the electrostatic discharge (ESD) impact protection inside the two -phase white thermosetting resin (9), and the cathode lead Of the GaN and InGaN based chips 10 attached to a portion of the die pad cup 3 of the portion, and of the positive and negative electrode leads 5 and 4 and the light emitting diode chip 10, respectively. In the reflecting cup 91 having a reflecting plate (Reflector) on the surface made of the conducting wire 11 and the TiO 2 -based white thermosetting resin (9) for energization The light transmissive epoxy resin 15 is molded.

도 3a,3b,3c는 본 고안의 일 실시예에 따른 발광다이오드의 내부구조와 이에 따른 극성을 도시한 도면 및 회로도이다.3A, 3B, and 3C are diagrams and circuit diagrams illustrating an internal structure of a light emitting diode according to an embodiment of the present invention and the polarity thereof.

도면에 도시된 바와 같이 본 고안의 실시예에 따른 InGaN, GaN계 발광다이오드의 구성은 한 쌍의 양극 리드(Anode Lead)(5)과 음극 리드(Cathode Lead)(4)으로 이루어진 리드프레임(1)과, 상기 음극·양극리드(4)(5)의 상측에 TiO2계 백색열경화성수지(9)로 제작한 표면에 반사판(Reflector)을 가진 반사컵(91)과, 이 TiO2계 백색열경화성수지(9) 내부 뒷면에 정전기 방전 충격보호를 위한 정전기 방전충격 보호소자(7){반도체 저항소자(Varistor) 또는 정전압 다이오드(Zener-Diode)}와, 음극리드(4)부분의 다이패드컵(3) 부분에 부착되어 있는 GaN, InGaN계의 두개의 칩(Chip)(10)과, 상기 양극, 음극 리드(5)(4)와 발광다이오드 칩(10)의 통전을 위한 통전와이어(11)와, 상기 TiO2계 백색열경화성수지(9)로 제작한 표면에 반사판(Reflector)을 가진 반사컵(91) 내부에 채워진 광 투과성 에폭시수지(15)로 이루어져 있다.As shown in the drawings, the InGaN and GaN-based light emitting diodes according to the embodiment of the present invention have a lead frame 1 including a pair of anode leads 5 and cathode leads 4. ), A reflector cup 91 having a reflector on the surface of the cathode and anode leads 4 and 5 made of a TiO 2 -based white thermosetting resin 9, and the TiO 2 -based white thermosetting Electrostatic discharge shock protection device 7 (semiconductor resistance device (Varistor) or constant voltage diode (Zener-Diode)) for the electrostatic discharge shock protection on the back of the resin (9), and the die pad cup of the cathode lead (4) ( 3) Two chips 10 of GaN and InGaN type attached to the part, and a conducting wire 11 for energizing the positive and negative electrode leads 5 and 4 and the light emitting diode chip 10. And a light transmissive epoxy resin 15 filled in the reflection cup 91 having a reflector on a surface made of the TiO 2 based white thermosetting resin 9. Consists of

도 4a,4b,4c,4d는 본 고안의 또 다른 실시예에 따른 발광다이오드의 내부구조와 이에 따른 극성을 도시한 도면 및 회로도이다.4A, 4B, 4C, and 4D are diagrams and circuit diagrams illustrating an internal structure of a light emitting diode and a polarity thereof according to another embodiment of the present invention.

도면에 도시된 바와 같이 본 고안 InGaN, GaN계 발광다이오드의 구성은 한 쌍의 양극리드(Anode Lead)(5)와 음극리드(Cathode Lead)(4)로 이루어진 리드프레임(1)과, 상기 음극·양극리드(4)(5)의 상측에 TiO2계 백색열경화성수지(9)로 만들어진 표면에 반사판(Reflector)을 가진 반사컵(91)과, 이 TiO2계 백색열경화성수지(9)로 만들어진 표면에 반사판(Reflector)을 가진 반사컵(91) 내부에 정전기로 인한 방전 충격 보호를 위한 정전기 방전(ESD) 충격 보호소자(7){반도체 저항소자(Varistor) 또는 정전압 다이오드(Zener-Diode)}와, 음극리드프레임(Lead Frame)(4)부분의 다이패드(Die Pad)컵(3) 부분에 부착되어 있는 GaN, InGaN계의 칩(Chip)(10)과, 상기 양극, 음극 리드(5)(4)와 발광다이오드칩(10)의 통전을 위한 통전와이어(11)와, 상기 TiO2계 백색열경화성수지(9)로 만들어진 표면에 반사판(Reflector)을 가진 반사컵(91) 내부에 부착된 GaN, InGaN계의 칩(Chip)(10)위에 도포된 파장변환형광체(12)와, 상기 파장변환형광체(12) 위에 존재하는 공기층(14)과, 상기 TiO2계 백색열경화성수지(9)로 만들어진 표면에 반사판(Reflector)을 가진 반사컵(91) 상측면에 위치하는 SiO2그라스(Glass)(13)로 이루어져 있다.As shown in the drawings, the InGaN and GaN-based light emitting diodes of the present invention have a lead frame 1 including a pair of anode leads 5 and cathode leads 4, and the cathodes. A reflector cup 91 having a reflector on a surface made of TiO 2 -based white thermosetting resin 9 on the upper side of the anode lead 4 and 5, and made of TiO 2 -based white thermosetting resin 9 Electrostatic discharge (ESD) impact protection element 7 (semiconductor resistance element (Zaristor) or constant voltage diode (Zener-Diode)) for the protection of the discharge shock caused by static electricity inside the reflection cup 91 having a reflector on the surface} And a GaN and InGaN-based chip 10 attached to a die pad cup 3 portion of a cathode lead frame 4 portion, and the anode and cathode leads 5. 4) and a conductive wire 11 for energizing the LED chip 10 and a reflector on a surface made of the TiO 2 based white thermosetting resin 9. A wavelength conversion phosphor 12 coated on the GaN and InGaN chips 10 attached to the inside of the reflective cup 91, an air layer 14 present on the wavelength conversion phosphor 12, It is composed of SiO 2 glass (13) located on the upper surface of the reflecting cup 91 having a reflector (Reflector) on the surface made of the TiO 2 -based white thermosetting resin (9).

도 5a,5b,5c,5d는 본 고안의 또 다른 실시예에 따른 발광다이오드의 내부구조와 이에 따른 극성을 도시한 도면 및 회로도이다.5A, 5B, 5C, and 5D are diagrams and circuit diagrams illustrating an internal structure of a light emitting diode and a polarity thereof according to another embodiment of the present invention.

이는, 도면에 도시된 바와 같이 도 4의 기술 내용과 같으며. 다만, GaN, InGaN계 발광다이오드칩(10)과 정전기 방전 충격 보호소자(7)가 다수열(1-4열 구성)로 이루어져 있는 것을 나타낸 것이다.This is the same as the description of FIG. 4 as shown in the figure. However, it is shown that the GaN, InGaN-based light emitting diode chip 10 and the electrostatic discharge impact protection device 7 are composed of a plurality of columns (1-4 columns).

도 6,7,8은 본 고안 하나의 일 실시예, 다른 일 실시에, 또 다른 일 실시예를 이루기 위한 중요 공정도상의 원부자재의 도면에 관한 것이다.6, 7, and 8 relates to a diagram of raw and subsidiary materials on an important process diagram for achieving one embodiment of the present invention, another embodiment, and another embodiment.

다수열로 배열된 다이패드부분(3)과 관통홀(2)과 정전기 충격 방전(ESD)보호소자(7)를 부착하기 위한 패드(Pad)부(71)로 이루어지고 있다.A pad portion 71 for attaching the die pad portion 3 arranged in a plurality of rows, the through hole 2 and the electrostatic shock discharge (ESD) protection element 7 is formed.

도 7은 본 고안의 실시를 위한 제 1공정도에 관한 도면으로 다수열로 배열된 다이패드부분(3)과 관통홀(2)과 정전기 방전 충격 보호소자(7)를 부착하기 위한 패드(Pad)부(71)와, 이 패드(Pad)(71)부위에 도포한 크림솔더(Cleam Solder)(8)와, 이 크림솔더(8)위에 부착된 정전기 방전 충격 보호소자(7)로 이루어지고 있다.FIG. 7 is a diagram illustrating a first process diagram for implementing the present invention, wherein a pad for attaching a die pad portion 3, a through hole 2, and an electrostatic discharge impact protection device 7 arranged in a plurality of rows is illustrated; A portion 71, a cream solder 8 applied to the pad 71, and an electrostatic discharge impact protection element 7 attached to the cream solder 8 are formed. .

도 8은 본 고안의 실시를 위한 제 2공정도에 관한 도면으로 다수열로 배열된 다이패드부분(3)과 관통홀(2)과 정전기 충격보호소자(7)를 부착하기 위한 패드(Pad)부(71)와 패드(Pad)(71)부위에 도포한 크림솔더(8)와, 이 크림솔더(8)위에 부착된 정전기 방전 충격 보호소자(7)와 반도체 리드프레임 부분에 몰딩된 TiO2계 백색열경화성수지(9)로 이루어지고 있다.FIG. 8 is a view illustrating a second process diagram for carrying out the present invention, wherein a pad portion for attaching a die pad portion 3, a through hole 2, and an electrostatic shock protection device 7 arranged in a plurality of rows is illustrated; (71) and a cream solder (8) applied to the pad (71), the electrostatic discharge impact protection device (7) attached to the cream solder (8) and a TiO 2 system molded in the semiconductor lead frame portion It consists of white thermosetting resin (9).

이상과 같은 구성으로 이루어지는 본 고안의 정전기 방전(ESD) 충격에 대한 보호 기능이 내장된 고휘도 발광다이오드는 InGaN, GaN계의 발광다이오드 칩(10)의 극성과 반대의 정전기 방전(ESD) 충격 보호소자(7){반도체 저항소자(Varistor) 또는 정전압 다이오드(Zener-Diode)}의 전극을 형성시킴으로서 수천 볼트의 정전기가 발생할 시 InGaN, GaN계의 칩(7)(Chip)에 직접적인 충격이 가해지지 않도록 정전기 방전 충격 보호소자(7){반도체 저항소자(Varistor) 또는 정전압 다이오드(Zener-Diode)}로 정전기를 도통시켜 세트(Set) 및 발광다이오드 소자에 정전기가 도통되지 않기 때문에 정전기 방전 충격 발생으로 인한 불량률을 획기적으로 줄일 수 있다.The high-brightness LED having a built-in protection function against the electrostatic discharge (ESD) impact of the present invention having the above configuration has an electrostatic discharge (ESD) impact protection device opposite to the polarity of the InGaN, GaN-based LED chip 10. (7) Forming an electrode of {semiconductor resistance element (Varistor) or constant-voltage diode (Zener-Diode)} to prevent direct impacts on InGaN, GaN-based chips (7) when thousands of volts of static electricity occurs The electrostatic discharge shock protection device 7 (semiconductor resistance element (Varistor) or constant voltage diode (Zener-Diode)} conducts static electricity, so that the electrostatic discharge is not conducted to the set and the light emitting diode elements. The defective rate can be drastically reduced.

이 정전기 방전 충격 보호소자(7){반도체 저항소자(Varistor) 또는 정전압 다이오드(Zener-Diode)}를 백색의 열가소성 사출재질이 아닌 TiO2계 백색 열경화성수지(9)와 함께 사용함으로서 InGaN, GaN계의 발광다이오드 칩(10)(Chip)을 은(Ag)수지(Epoxy)로 접착하지 않고 고온의 유텍티크본딩(Eutectic Bonding)방법으로 작업을 할 수 있어 생산 능력을 향상시키며, 순전압(Forward Voltage-Vf)을 낮출 수 있다.By using this electrostatic discharge impact protection element 7 (semiconductor resistance element (Varistor) or constant voltage diode (Zener-Diode)} together with the TiO 2 based white thermosetting resin (9) instead of the white thermoplastic injection material, InGaN, GaN type LED chip 10 (Chip) of the silver (Ag) without bonding (Epoxy) can be worked by a high temperature Eutectic Bonding (Eutectic Bonding) method to improve the production capacity, forward voltage -Vf) can be lowered.

또한, 이 TiO2계 백색 열경화성수지(9) 내부에 정전기 방전 충격 보호소자(7){반도체 저항소자(Varistor) 또는 정전압 다이오드(Zener-Diode)}를 실장함으로서 발광다이오드칩(Chip)에서 방사되는 빛을 간섭하지 않으므로 발광다이오드의 휘도를 향상 시킬 수 있다.In addition, the electrostatic discharge shock protection device 7 (semiconductor resistance element (Varistor) or constant voltage diode (Zener-Diode)) is mounted inside the TiO 2 based white thermosetting resin 9 to be radiated from the light emitting diode chip. Since it does not interfere with light, the brightness of the light emitting diode can be improved.

또한, TiO2계 백색 열경화성수지(9)를 사용하여 만든 표면에 반사판(Reflector)을 가진 반사컵(91) 내부를 투과형 에폭시 수지로 채우지 않고 TiO2계 백색 열경화성수지(9) 상측부에 SiO2그라스(Glass)(13)를 접착제로 접착함으로서 발광다이오드칩(Chip)에 열적 스트레스(Stress)를 주지 않기 때문에 고열로 인해 발생되는 문제를 지니지 않는 발광다이오드소자를 제조할 수 있다.Further, SiO 2 to TiO phase 2 based white thermosetting resin reflective cup having a reflective plate (Reflector) on the surface made by using the 9 (91) without filling the inside of a transmission-type epoxy resin, TiO 2 based white thermosetting resin 9 side By attaching the glass 13 with an adhesive, the light emitting diode chip does not give thermal stress to the chip, thereby manufacturing a light emitting diode device having no problem due to high heat.

이상과 같은 본 고안은, InGaN, GaN계의 칩(Chip)에 직접적인 충격이 가해지지 않고 정전기 방전 충격 발생으로 인한 불량률을 획기적으로 줄이고, 정전기 방전 충격 보호소자{반도체 저항소자(Varistor) 또는 정전압 다이오드(Zener-Diode)}를 백색의 열가소성 사출재질이 아닌 TiO2계 백색 열경화성수지와 함께 사용함으로서 고온의 유텍티크본딩(Eutectic Bonding)방법으로 작업을 할 수 있어 생산 능력을 향상시키며, 순전압(Forward Voltage-Vf)을 낮출 수 있고, 또한, 이 TiO2계 백색 열경화성수지 내부에 정전기 방전 충격 보호소자{반도체 저항소자(Varistor) 또는 정전압 다이오드(Zener-Diode)}를 실장함으로서 발광다이오드칩(Chip)에서 방사되는 빛을 간섭하지 않으므로 발광다이오드의 휘도를 향상 시킬 수 있으며 표면에 반사판(Reflector)을 가진 반사컵 공간에 정전압 다이오드를 실장하고 InGaN, GaN계의 칩(Chip)를 실장하기 위하여 다이본딩과 와이어본딩을 하는 작업상의 난이점을 해소할 수 있기에 획기적인 생산성 향상효과를 얻을 수 있다.The present invention as described above can significantly reduce the defect rate caused by the occurrence of electrostatic discharge shock without directly impacting the chip of InGaN, GaN-based, and electrostatic discharge shock protection device (semiconductor resistor or constant voltage diode). (Zener-Diode)} can be used with high temperature eutectic bonding method by using TiO 2 -based white thermosetting resin instead of white thermoplastic injection material to improve production capacity and forward voltage. Voltage-Vf) can be lowered, and a light emitting diode chip is mounted by mounting an electrostatic discharge shock protection device (a semiconductor resistor or a Zener-Diode) inside the TiO 2 based white thermosetting resin. Since it does not interfere with the light emitted from the light emitting diode, the brightness of the light emitting diode can be improved and a constant voltage die is placed in the reflecting cup space having a reflector on the surface. Mounting the DE and because it can be eliminated I advantages work to the die-bonding and wire-bonding to mounting the chip (Chip) of InGaN, GaN-based may be obtained improving the breakthrough productivity.

또한, TiO2계 백색 열경화성수지를 사용하여 만든 표면에 반사판(Reflector)을 가진 반사컵 내부를 TiO2계 백색 열경화성수지 상측부에 SiO2그라스(Glass)를 접착제로 접착함으로서 발광다이오드칩(Chip)에 열적 스트레스(Stress)를 주지 않기 때문에 고열로 인해 발생되는 문제를 지니지 않는 발광다이오드소자를 제조할 수 효과를 제공한다.Further, the light emitting diode chip (Chip) by a SiO 2 glass a reflective cup inside with a reflecting plate (Reflector) on the surface created by using the TiO 2 based white thermosetting resin on TiO 2 based white thermosetting resin, the upper portion (Glass) bonding with an adhesive Since it does not give a thermal stress (Stress) to the light emitting diode device that does not have a problem caused by high heat provides an effect that can be manufactured.

Claims (8)

한 쌍의 양극 리드(Anode Lead)(5)와 음극 리드(Cathode Lead)(4)로 이루어진 리드프레임(1)과, 상기 음극·양극 리드(4)(5)의 상측에 발광다이오드의 빛을 한 방향으로 보내기 위한 표면에 반사판(Reflector)을 가진 반사컵(91)과 표면에 반사판(Reflector)을 가진 반사컵(91) 안쪽(음극 양극 리드의 동일 평면상)에 정전압 방전(ESD)충격 보호소자를 삽입하고, 음극 리드(Cathode Lead Frame)부분의 다이패드(Die Pad)컵(3) 부분에 GaN, InGaN계의 칩(10)을 부착하고, 상기 양극·음극 리드(5)(4)와 발광다이오드칩(10)의 통전을 위한 통전 와이어(11)와, 상기 표면에 반사판을 가진 반사컵(91) 안쪽에 광 투과성 에폭시 수지(15)로 이루어지는 발광다이오드에 있어서,The lead frame 1 includes a pair of anode leads 5 and cathode leads 4, and light of the light emitting diode is placed on the cathode and anode leads 4 and 5. Constant voltage discharge (ESD) shock protection inside the reflecting cup 91 with the reflector on the surface for sending in one direction and inside the reflecting cup 91 with the reflector on the surface (on the same plane of the cathode anode lead) An element is inserted, and a GaN and InGaN-based chip 10 is attached to a die pad cup 3 portion of a cathode lead frame portion, and the anode and cathode leads 5 and 4 are attached. In the light emitting diode comprising a conducting wire 11 for energizing the light emitting diode chip 10 and a light transmitting epoxy resin 15 inside the reflecting cup 91 having a reflecting plate on the surface thereof, 상기 표면에 반사판(Reflector)을 가진 반사컵(91)이 TiO2계 백색 열경화성수지(9)로 트랜스퍼 몰드(Transfer Mold)방식으로 제작되어 몰드 전에 발광다이오드의 빛이 방사 되는 방향으로 표면에 반사판(Reflecfor)을 가진 반사컵(91)의 벽면이 위치할 곳에 하나 이상의 정전기 방전(ESD) 충격보호소자를 크림솔더(Cream Solder)(8)로 부착하고, 그 위에 TiO2계 백색 열경화성수지(9)를 트랜스퍼 몰딩하고 트리밍(Trimming)과 포밍(Forming)을 통하여 개체화가 이루어지는 것을 특징으로 하는 정전기 방전(ESD) 충격 충격 보호 기능이 내장된 고휘도 발광다이오드.The reflector cup 91 having a reflector on the surface is made of a transfer mold method using a TiO 2 based white thermosetting resin 9 so that the reflector on the surface in the direction in which the light of the light emitting diode is emitted before the mold. At least one electrostatic discharge (ESD) impact protection device is attached with a cream solder (8) where the wall of the reflecting cup (91) having a reflector is to be placed, and a TiO 2 based white thermosetting resin (9) thereon. A high brightness light-emitting diode with built-in electrostatic discharge (ESD) impact impact protection, characterized in that the transfer molding and the individualization is made through trimming and forming. 청구항 1에 있어서,The method according to claim 1, 발광다이오드칩(Chip)(10)과 정전기 방전(ESD) 충격 보호소자를 다수열로 배열하고, 표면에 반사판(Reflector)을 가진 반사컵(91)도 다수열로 구성하여 이루어지는 것을 특징으로 하는 정전기 방전(ESD) 충격 보호 기능이 내장된 고휘도 발광다이오드.Electrostatic chip characterized in that the light emitting diode chip (Chip) 10 and the electrostatic discharge (ESD) shock protection device is arranged in a plurality of rows, the reflecting cup 91 having a reflector on the surface is also composed of a plurality of rows High brightness LEDs with built-in discharge (ESD) impact protection. 청구항 1에 있어서,The method according to claim 1, 상기 백색 TiO2계 열경화성수지(9)로 만들어진 표면에 반사판(Reflector)을 가진 반사컵(91) 내부 뒷쪽면에 하나 이상의 정전기 방전(ESD) 충격 보호소자를 내장한 것을 특징으로 하는 정전기 방전(ESD) 충격 보호 기능이 내장된 고휘도 발광다이오드.Electrostatic discharge (ESD) characterized in that one or more electrostatic discharge (ESD) shock protection device is built in the inner back surface of the reflection cup 91 having a reflector on the surface made of the white TiO 2 -based thermosetting resin (9) ) High brightness LEDs with built-in impact protection. 청구항 1,2,3항 중 어느 한 항에 있어서The method according to any one of claims 1,2 and 3 상기 정전기 방전(ESD)로 충격보호 소자로 반도체 저항소자(Varistor)를 사용한 것을 특징으로 하는 정전기 방전(ESD) 충격 보호 기능이 내장된 고휘도 발광다이오드.A high brightness LED having a built-in electrostatic discharge (ESD) impact protection function, characterized in that a semiconductor resistor (Varistor) is used as an impact protection element as the electrostatic discharge (ESD). 청구항 1,2,3항 중 어느 한 항에 있어서The method according to any one of claims 1,2 and 3 상기 정전기 방전(ESD)로 충격보호 소자로 정전압 다이오드(Zener Diode)를 사용한 것을 특징으로 하는 정전기 방전(ESD) 충격 보호 기능이 내장된 고휘도 발광다이오드.A high brightness light emitting diode having an electrostatic discharge (ESD) impact protection function, characterized in that a static voltage diode (Zener Diode) is used as an impact protection element as the electrostatic discharge (ESD). 청구항 1,2,3항 중 어느 한 항에 있어서,The method according to any one of claims 1,2,3, 상기 열경화성수지(TiO2)(9) 내부에 배치된 GaN, InGaN계 칩(10)위에 형성되는 파장변환형광체(12)와, 상기 파장변환형광체(12)에 형성된 공기층(14)과, 상기 열경화성수지(TiO2)(9)로 만들어진 표면에 반사판(Reflector)을 가진 반사컵(91) 상측면에 SiO2그라스(Glass)(13)를 부착하여서 이루어지는 것을 특징으로 하는 정전기 방전(ESD) 충격보호 기능이 내장된 고휘도 발광다이오드.The wavelength converting phosphor 12 formed on the GaN, InGaN-based chip 10 disposed inside the thermosetting resin (TiO 2 ) 9, the air layer 14 formed on the wavelength converting phosphor 12, and the thermosetting resin Electrostatic discharge (ESD) impact protection, characterized in that by attaching SiO 2 glass (13) on the upper surface of the reflecting cup 91 having a reflector (Reflector) on the surface made of resin (TiO2) (9) Built-in high brightness light emitting diode. 청구항 1,2,3항중 어느 한 항에 있어서The method according to any one of claims 1,2 and 3 상기 발광다이오드 칩(Chip)(10)과 정전기 방전(ESD) 충격 보호소자(7)를 다수열로 구성된 표면에 반사판(Reflector)을 가진 반사컵(91)에 다수열 배열하여서 이루어지는 것을 특징으로 하는정전기 방전(ESD) 충격 보호 기능이 내장된 고휘도 발광다이오드.The light emitting diode chip (Chip) 10 and the electrostatic discharge (ESD) impact protection device (7) is characterized in that a plurality of rows arranged in a reflective cup 91 having a reflector (Reflector) on the surface consisting of a plurality of columns High brightness LEDs with built-in electrostatic discharge (ESD) impact protection. 청구항 1,2,3항중 어느 한 항에에 있어서,The method according to any one of claims 1,2,3, 상기 표면에 반사판(Reflector)을 가진 반사컵(91)을 플라스틱 사출재질을 사용하며 한 플라스틱 리플렉터에 다수개 발광다이오드 칩(Chip)(10)를 서로 다른 다이패드(Die Pad)에 각각 배열하여서 이루어지는 것을 특징으로 하는 정전기 방전(ESD) 충격 보호 기능이내장된 고휘도 발광다이오드.The reflective cup 91 having a reflector on the surface is made of a plastic injection material, and a plurality of light emitting diode chips 10 are arranged on different die pads on one plastic reflector. A high brightness light emitting diode with electrostatic discharge (ESD) impact protection, characterized in that.
KR20040026925U 2004-09-20 2004-09-20 High Brightness LED With Protective Function of Electrostatic Damage KR200373718Y1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR20040026925U KR200373718Y1 (en) 2004-09-20 2004-09-20 High Brightness LED With Protective Function of Electrostatic Damage
JP2005267552A JP2006093697A (en) 2004-09-20 2005-09-14 High luminance light-emitting diode provided with protection function against electrostatic discharge impact
CN 200510103400 CN100543985C (en) 2004-09-20 2005-09-20 High brightness LED with anti-static discharge impact protection funciton
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