KR20040031627A - 배선기판 및 그 제조방법 - Google Patents
배선기판 및 그 제조방법 Download PDFInfo
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- KR20040031627A KR20040031627A KR1020030068753A KR20030068753A KR20040031627A KR 20040031627 A KR20040031627 A KR 20040031627A KR 1020030068753 A KR1020030068753 A KR 1020030068753A KR 20030068753 A KR20030068753 A KR 20030068753A KR 20040031627 A KR20040031627 A KR 20040031627A
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136204—Arrangements to prevent high voltage or static electricity failures
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2211/00—Plasma display panels with alternate current induction of the discharge, e.g. AC-PDPs
- H01J2211/20—Constructional details
- H01J2211/46—Connecting or feeding means, e.g. leading-in conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
- Y10T29/49165—Manufacturing circuit on or in base by forming conductive walled aperture in base
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- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (11)
- 기판 주변부에 형성된 쇼트링, 상기 쇼트링으로부터 동일 평면에서 독립된 독립배선패턴, 상기 독립배선패턴에 가장 근접하면서 상기 쇼트링과 동일 평면에서 연속되는 연속배선패턴, 상기 독립배선패턴 및 상기 연속배선패턴을 피복하는 절연막을 구비하는 배선기판에 있어서,상기 절연막은, 상기 독립배선패턴까지 관통하는 제 1 관통구와, 상기 연속배선패턴까지 관통하는 제 2 관통구를 구비하는 배선기판.
- 제 1 항에 있어서,상기 제 1 관통구에서 상기 연속배선패턴까지의 거리는, 상기 제 1 관통구 및 상기 제 2 관통구를 잇는 가상선 상에서의, 상기 제 2 관통구에서 상기 연속배선패턴까지의 거리보다 긴 배선기판.
- 기판 주변부에 형성된 쇼트링, 상기 쇼트링으로부터 동일 평면에서 독립된 독립배선패턴, 상기 쇼트링과 동일 평면에서 연속되는 제 1 연속배선패턴, 상기 독립배선패턴 및 상기 제 1 연속배선패턴 사이에 개재하면서 상기 쇼트링과 동일 평면에서 연속되는 제 2 연속배선패턴, 상기 독립배선패턴, 상기 제 1 및 제 2 연속배선패턴을 피복하는 절연막을 구비하는 배선기판에 있어서,상기 절연막은 상기 독립배선패턴까지 관통하는 제 1 관통구, 상기 제 1 연속배선패턴까지 관통하는 제 2 관통구, 상기 제 2 연속배선패턴까지 관통하는 제 3 관통구를 구비하고,상기 독립배선패턴 및 상기 제 1 연속배선패턴은, 상기 제 2 연속배선패턴에 걸쳐지는 접속패턴에 의해 상기 제 1 관통구 및 상기 제 2 관통구를 통해 전기적으로 접속되며,상기 제 3 관통구는, 상기 접속패턴 형성영역 이외의 영역에 형성되는 배선기판.
- 기판 주변부에 형성된 쇼트링, 상기 쇼트링으로부터 동일 평면에서 독립된 독립배선패턴, 상기 쇼트링과 동일 평면에서 연속되는 제 1 연속배선패턴, 상기 독립배선패턴 및 상기 제 1 연속배선패턴 사이에 개재하면서 상기 쇼트링과 동일 평면에서 연속되는 제 2 연속배선패턴, 상기 독립배선패턴, 상기 제 1 및 제 2 연속배선패턴을 피복하는 절연막을 구비하는 배선기판에 있어서,상기 절연막은 상기 독립배선패턴까지 관통하는 제 1 관통구와, 상기 제 1 연속배선패턴까지 관통하는 제 2 관통구를 구비하고,상기 독립배선패턴 및 상기 제 1 연속배선패턴은, 상기 제 2 연속배선패턴에 걸쳐지는 접속패턴에 의해 상기 제 1 관통구 및 상기 제 2 관통구를 통해 전기적으로 접속되며,상기 제 2 연속배선패턴은, 상기 접속패턴 형성영역 이외의 영역에, 상기 쇼트링과 동일 평면에서 상기 독립배선패턴 쪽으로 돌출되는 볼록부를 구비하고,상기 제 1 관통구로부터 상기 접속패턴 형성영역 내의 상기 제 2 연속배선패턴까지의 거리는, 상기 제 1 관통구에서 상기 볼록부까지의 거리보다 긴 배선기판.
- 제 4 항에 있어서,상기 절연막은, 상기 볼록부 형성영역 내에, 상기 볼록부까지 관통하는 제 3 관통구를 구비하는 배선기판.
- 제 5 항에 있어서,상기 제 1 관통구로부터 상기 접속패턴 형성영역 내의 상기 제 2 연속배선패턴까지의 거리는, 상기 제 1 관통구에서 상기 제 3 관통구까지의 거리보다 긴 배선기판.
- 제 5 항 또는 제 6 항에 있어서,상기 접속패턴은, 상기 제 3 관통구를 통해 상기 볼록부와 전기적으로 접속되며, 상기 볼록부는 상기 제 2 연속배선패턴으로부터 독립된 배선기판.
- 제 3 항 내지 제 6 항 중 어느 한 항에 있어서,상기 제 1 관통구로부터 상기 제 2 연속배선패턴까지의 거리는 상기 제 1 관통구 및 상기 제 3 관통구를 잇는 가상선 상의, 상기 제 3 관통구에서 상기 제 2 연속배선패턴까지의 거리보다 긴 배선기판.
- 제 1 항 내지 제 8 항 중 어느 한 항 기재의 배선기판을 이용해 형성된 표시장치.
- 제 3 항 내지 제 6 항 중 어느 한 항 기재의 배선기판을 제조하는 방법에 있어서,상기 절연막에 상기 제 1 관통구 및 상기 제 2 관통구를 형성하는 공정,상기 기판 상에 도전막을 형성하는 공정,상기 도전막을 패터닝하여 상기 접속패턴을 형성하는 공정을 포함하는 배선기판의 제조방법.
- 제 7 항 기재의 배선기판을 제조하는 방법에 있어서,상기 절연막에 상기 제 1 관통구, 상기 제 2 관통구 및 상기 제 3 관통구를 형성하는 공정,상기 기판 상에 도전막을 형성하는 공정,상기 도전막을 패터닝하여 상기 접속패턴을 형성하는 공정,상기 볼록부와 상기 제 2 연속배선패턴의 접속부분을 절단하는 공정을 포함하는 배선기판의 제조방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2002-00291085 | 2002-10-03 | ||
JP2002291085A JP4067090B2 (ja) | 2002-10-03 | 2002-10-03 | Tft基板およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
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KR20040031627A true KR20040031627A (ko) | 2004-04-13 |
KR100562922B1 KR100562922B1 (ko) | 2006-03-22 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020030068753A KR100562922B1 (ko) | 2002-10-03 | 2003-10-02 | 배선기판 및 그 제조방법 |
Country Status (4)
Country | Link |
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US (1) | US7405365B2 (ko) |
JP (1) | JP4067090B2 (ko) |
KR (1) | KR100562922B1 (ko) |
CN (1) | CN1249649C (ko) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050127319A1 (en) * | 2003-12-10 | 2005-06-16 | Sanyo Chemical Industries, Ltd. | Electrolytic solution for an electrochemical capacitor and an electrochemical capacitor using the same |
JP4216270B2 (ja) | 2004-06-30 | 2009-01-28 | 三星エスディアイ株式会社 | 電子装置、薄膜トランジスタ構造体及びそれを備える平板ディスプレイ装置 |
KR100563067B1 (ko) * | 2004-06-30 | 2006-03-24 | 삼성에스디아이 주식회사 | 박막 트랜지스터 구조체 및 이를 구비하는 평판디스플레이 장치 |
KR101316791B1 (ko) * | 2007-01-05 | 2013-10-11 | 삼성디스플레이 주식회사 | 게이트 구동회로 및 이를 포함하는 액정 표시 장치, 박막트랜지스터 기판의 제조 방법 |
JP5159353B2 (ja) * | 2008-02-08 | 2013-03-06 | 株式会社日立製作所 | 記憶システム、解除方法及び副側のストレージ装置 |
JP5306784B2 (ja) | 2008-11-18 | 2013-10-02 | 株式会社ジャパンディスプレイ | 表示装置 |
KR101643835B1 (ko) | 2009-07-10 | 2016-07-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
JP5662114B2 (ja) * | 2010-11-17 | 2015-01-28 | 株式会社ジャパンディスプレイ | 表示装置 |
US9595545B2 (en) * | 2013-01-25 | 2017-03-14 | Sharp Kabushiki Kaisha | Semiconductor device |
JP6360718B2 (ja) | 2014-05-16 | 2018-07-18 | 株式会社ジャパンディスプレイ | 表示装置 |
CN106575062B (zh) * | 2014-08-07 | 2019-11-08 | 夏普株式会社 | 有源矩阵基板及其制造方法 |
CN105679771B (zh) | 2016-01-29 | 2018-10-12 | 厦门天马微电子有限公司 | 阵列基板及其制作方法、包含其的显示面板 |
JP6797042B2 (ja) * | 2017-02-02 | 2020-12-09 | 株式会社ジャパンディスプレイ | 表示装置 |
JP7033282B2 (ja) * | 2017-09-29 | 2022-03-10 | スタンレー電気株式会社 | 電気化学光学装置 |
CN109283763B (zh) * | 2018-11-16 | 2021-10-26 | 信利半导体有限公司 | 基板结构、显示面板及面板制造方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0756184A (ja) * | 1993-08-12 | 1995-03-03 | Sharp Corp | 表示装置 |
JPH08114815A (ja) | 1994-10-18 | 1996-05-07 | Sony Corp | Tftアクティブマトリクス液晶基板の製造方法 |
US5677745A (en) * | 1994-12-21 | 1997-10-14 | Kabushiki Kaisha Toshiba | LCD with electrostatic discharge projections |
JP3072707B2 (ja) * | 1995-10-31 | 2000-08-07 | インターナショナル・ビジネス・マシーンズ・コーポレ−ション | 液晶表示装置及びその製造方法 |
TW457690B (en) * | 1999-08-31 | 2001-10-01 | Fujitsu Ltd | Liquid crystal display |
KR100769160B1 (ko) * | 2000-12-29 | 2007-10-23 | 엘지.필립스 엘시디 주식회사 | 액정표시장치의 테스트 패드 |
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2002
- 2002-10-03 JP JP2002291085A patent/JP4067090B2/ja not_active Expired - Lifetime
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2003
- 2003-09-17 US US10/664,158 patent/US7405365B2/en active Active
- 2003-09-29 CN CNB031248888A patent/CN1249649C/zh not_active Expired - Fee Related
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US7405365B2 (en) | 2008-07-29 |
JP4067090B2 (ja) | 2008-03-26 |
CN1497506A (zh) | 2004-05-19 |
KR100562922B1 (ko) | 2006-03-22 |
CN1249649C (zh) | 2006-04-05 |
JP2004126276A (ja) | 2004-04-22 |
US20040066637A1 (en) | 2004-04-08 |
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