KR20040026959A - 액정 표시 장치 - Google Patents
액정 표시 장치 Download PDFInfo
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- KR20040026959A KR20040026959A KR1020020058619A KR20020058619A KR20040026959A KR 20040026959 A KR20040026959 A KR 20040026959A KR 1020020058619 A KR1020020058619 A KR 1020020058619A KR 20020058619 A KR20020058619 A KR 20020058619A KR 20040026959 A KR20040026959 A KR 20040026959A
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- KR
- South Korea
- Prior art keywords
- common voltage
- voltage line
- pixel
- line
- pixel electrode
- Prior art date
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 32
- 239000010410 layer Substances 0.000 claims description 53
- 239000003990 capacitor Substances 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 24
- 239000010409 thin film Substances 0.000 claims description 14
- 239000011241 protective layer Substances 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 4
- 239000011651 chromium Substances 0.000 description 17
- 239000010408 film Substances 0.000 description 14
- 239000000463 material Substances 0.000 description 13
- 229910052804 chromium Inorganic materials 0.000 description 10
- 239000010949 copper Substances 0.000 description 10
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 9
- 229910000838 Al alloy Inorganic materials 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 8
- 230000007547 defect Effects 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- NPXOKRUENSOPAO-UHFFFAOYSA-N Raney nickel Chemical class [Al].[Ni] NPXOKRUENSOPAO-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical group [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 241001270131 Agaricus moelleri Species 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- SJKRCWUQJZIWQB-UHFFFAOYSA-N azane;chromium Chemical compound N.[Cr] SJKRCWUQJZIWQB-UHFFFAOYSA-N 0.000 description 1
- CXOWYMLTGOFURZ-UHFFFAOYSA-N azanylidynechromium Chemical compound [Cr]#N CXOWYMLTGOFURZ-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/13629—Multilayer wirings
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/121—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Liquid Crystal (AREA)
Abstract
Description
Claims (7)
- 기판상에 제1 방향으로 형성되고, 게이트 신호를 전달하는 복수의 게이트 라인과, 상기 기판상에 상기 제1 방향과는 상이한 제2 방향으로 형성되고, 데이터 신호를 전달하는 복수의 데이터 라인과, 상기 게이트 라인들과 데이터 라인들에 의해 둘러싸여 정의되는 복수의 화소 영역에 각각 형성되고, 상기 게이트 라인과 데이터 라인을 연결하는 박막 트랜지스터를 포함하는 액정 표시 장치에 있어서,상기 기판상에 형성되어, 공통 전압을 전달하는 복수의 공통 전압 라인;상기 기판, 박막 트랜지스터 및 공통 전압 라인상에 형성되고, 상기 공통 전압 라인을 노출시키는 콘택홀이 형성된 유기절연막; 및상기 유기절연막상에 형성되고, 상기 콘택홀을 통해 인접하는 화소전극과 전기적으로 연결된 복수의 화소 전극을 포함하는 액정 표시 장치.
- 제1항에 있어서, 상기 인접하는 화소 전극은 상기 제2 방향으로 형성되는 것을 특징으로 하는 액정 표시 장치.
- 제1항에 있어서, 상기 화소 전극들 중 현재 화소 전극은 상기 현재 화소 전극의 하부에 형성된 공통 전압 라인과 전기적으로 연결되고, 이전 또는 이후 화소 전극의 하부에 형성된 공통 전압 라인과 전기적으로 연결되는 것을 특징으로 하는 액정 표시 장치.
- 제1항에 있어서, 상기 화소 전극들 중 현재 화소 전극은 상기 현재 화소 전극의 하부에 형성된 공통 전압 라인과 전기적으로 연결되고, 이전 또는 이후 화소 전극으로 연장되어 상기 이전 또는 이후 화소 전극의 하부에 형성된 공통 전압 라인과 캐패시터를 형성하는 것을 특징으로 하는 액정 표시 장치.
- 제1항에 있어서, 상기 유기절연막 및 화소 전극간에 형성되고, 상기 공통 전극 라인을 노출시키는 콘택홀이 형성된 보호층을 더 포함하는 것을 특징으로 하는 액정 표시 장치.
- 제1항에 있어서, 상기 공통 전압 라인은,상기 제1 방향으로 형성되어 상기 공통 전압을 전달하는 메인 공통 전압 라인; 및상기 메인 공통 전압 라인으로부터 상기 제2 방향으로 분기되어 상기 화소 전극의 제1 영역에 공통 전압을 전달하는 제1 서브 공통 전압 라인을 포함하는 것을 특징으로 하는 액정 표시 장치.
- 제6항에 있어서, 상기 메인 공통 전압 라인으로부터 상기 제2 방향으로 분기되어, 상기 화소 전극의 제2 영역에 공통 전압을 전달하는 제2 서브 공통 전압 라인을 더 포함하는 것을 특징으로 하는 액정 표시 장치.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020020058619A KR100867750B1 (ko) | 2002-09-27 | 2002-09-27 | 액정 표시 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020020058619A KR100867750B1 (ko) | 2002-09-27 | 2002-09-27 | 액정 표시 장치 |
Publications (2)
Publication Number | Publication Date |
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KR20040026959A true KR20040026959A (ko) | 2004-04-01 |
KR100867750B1 KR100867750B1 (ko) | 2008-11-10 |
Family
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Family Applications (1)
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KR1020020058619A KR100867750B1 (ko) | 2002-09-27 | 2002-09-27 | 액정 표시 장치 |
Country Status (1)
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101036844B1 (ko) * | 2008-12-09 | 2011-05-25 | 듀오백코리아 주식회사 | 사무용 의자의 좌판 전후 이동 조절 장치 |
KR20120044780A (ko) * | 2010-10-28 | 2012-05-08 | 삼성전자주식회사 | 박막 트랜지스터 표시판, 액정 표시 장치, 이들의 수리 방법, 색필터 표시판 및 그의 제조 방법 |
JP2013080260A (ja) * | 2006-11-03 | 2013-05-02 | Samsung Display Co Ltd | 液晶表示装置及びその不良画素修復方法 |
KR101463025B1 (ko) * | 2007-11-23 | 2014-11-19 | 엘지디스플레이 주식회사 | 횡전계방식 액정표시장치 및 그 제조방법 |
US9229257B2 (en) | 2012-08-22 | 2016-01-05 | Samsung Display Co., Ltd. | Liquid crystal display and manufacturing method thereof |
KR20180003161A (ko) * | 2016-06-30 | 2018-01-09 | 엘지디스플레이 주식회사 | 액정 표시 장치 |
US10347188B2 (en) | 2016-06-14 | 2019-07-09 | Samsung Display Co., Ltd. | Display device having a driving voltage line |
CN111308807A (zh) * | 2020-04-01 | 2020-06-19 | 深圳市华星光电半导体显示技术有限公司 | 液晶显示面板 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3272166B2 (ja) * | 1994-10-07 | 2002-04-08 | 松下電器産業株式会社 | 液晶表示装置の製造方法 |
JPH08146384A (ja) * | 1994-11-18 | 1996-06-07 | Matsushita Electric Ind Co Ltd | アクティブマトリックス型液晶表示素子 |
JPH08328035A (ja) * | 1995-05-30 | 1996-12-13 | Advanced Display:Kk | 液晶表示装置およびその製法ならびに点欠陥の修復方法 |
JPH10239699A (ja) * | 1997-02-25 | 1998-09-11 | Advanced Display:Kk | 液晶表示装置 |
JP2002278476A (ja) * | 2001-03-14 | 2002-09-27 | Display Technologies Inc | 点欠陥を矯正したアレイ基板、及び、その製造方法 |
-
2002
- 2002-09-27 KR KR1020020058619A patent/KR100867750B1/ko active IP Right Grant
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9268187B2 (en) | 2006-11-03 | 2016-02-23 | Samsung Display Co., Ltd. | Liquid crystal display device and method of repairing bad pixels therein |
JP2013080260A (ja) * | 2006-11-03 | 2013-05-02 | Samsung Display Co Ltd | 液晶表示装置及びその不良画素修復方法 |
US8976331B2 (en) | 2006-11-03 | 2015-03-10 | Samsung Display Co., Ltd. | Liquid crystal display device and method of repairing bad pixels therein |
US9164344B2 (en) | 2006-11-03 | 2015-10-20 | Samsung Display Co., Ltd. | Liquid crystal display device and method of repairing bad pixels therein |
KR101463025B1 (ko) * | 2007-11-23 | 2014-11-19 | 엘지디스플레이 주식회사 | 횡전계방식 액정표시장치 및 그 제조방법 |
KR101036844B1 (ko) * | 2008-12-09 | 2011-05-25 | 듀오백코리아 주식회사 | 사무용 의자의 좌판 전후 이동 조절 장치 |
KR20120044780A (ko) * | 2010-10-28 | 2012-05-08 | 삼성전자주식회사 | 박막 트랜지스터 표시판, 액정 표시 장치, 이들의 수리 방법, 색필터 표시판 및 그의 제조 방법 |
US9229257B2 (en) | 2012-08-22 | 2016-01-05 | Samsung Display Co., Ltd. | Liquid crystal display and manufacturing method thereof |
US9841623B2 (en) | 2012-08-22 | 2017-12-12 | Samsung Display Co., Ltd. | Liquid crystal display and manufacturing method thereof |
US10347188B2 (en) | 2016-06-14 | 2019-07-09 | Samsung Display Co., Ltd. | Display device having a driving voltage line |
KR20180003161A (ko) * | 2016-06-30 | 2018-01-09 | 엘지디스플레이 주식회사 | 액정 표시 장치 |
CN111308807A (zh) * | 2020-04-01 | 2020-06-19 | 深圳市华星光电半导体显示技术有限公司 | 液晶显示面板 |
US11531242B2 (en) | 2020-04-01 | 2022-12-20 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Liquid crystal display panel |
Also Published As
Publication number | Publication date |
---|---|
KR100867750B1 (ko) | 2008-11-10 |
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