KR20020032709A - 반도체 소자의 금속 배선 형성 방법 - Google Patents
반도체 소자의 금속 배선 형성 방법 Download PDFInfo
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- KR20020032709A KR20020032709A KR1020000063161A KR20000063161A KR20020032709A KR 20020032709 A KR20020032709 A KR 20020032709A KR 1020000063161 A KR1020000063161 A KR 1020000063161A KR 20000063161 A KR20000063161 A KR 20000063161A KR 20020032709 A KR20020032709 A KR 20020032709A
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- 238000000034 method Methods 0.000 title claims abstract description 73
- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 20
- 239000002184 metal Substances 0.000 title claims abstract description 20
- 239000010949 copper Substances 0.000 claims abstract description 34
- 239000000126 substance Substances 0.000 claims abstract description 33
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910052802 copper Inorganic materials 0.000 claims abstract description 32
- 238000009832 plasma treatment Methods 0.000 claims abstract description 25
- 239000010410 layer Substances 0.000 claims abstract description 22
- 230000004888 barrier function Effects 0.000 claims abstract description 18
- 238000009792 diffusion process Methods 0.000 claims abstract description 18
- 239000011229 interlayer Substances 0.000 claims abstract description 15
- 239000003623 enhancer Substances 0.000 claims abstract description 12
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 239000010408 film Substances 0.000 claims description 41
- 239000010409 thin film Substances 0.000 claims description 24
- 239000007789 gas Substances 0.000 claims description 23
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 18
- 239000012744 reinforcing agent Substances 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 12
- 229910052786 argon Inorganic materials 0.000 claims description 10
- 238000005229 chemical vapour deposition Methods 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- 229910052740 iodine Inorganic materials 0.000 claims description 8
- 239000007788 liquid Substances 0.000 claims description 8
- 238000001020 plasma etching Methods 0.000 claims description 8
- 230000009977 dual effect Effects 0.000 claims description 7
- 238000005240 physical vapour deposition Methods 0.000 claims description 7
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 6
- 239000011630 iodine Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 4
- 239000001307 helium Substances 0.000 claims description 4
- 229910052734 helium Inorganic materials 0.000 claims description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 4
- 150000002431 hydrogen Chemical class 0.000 claims description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 229910004200 TaSiN Inorganic materials 0.000 claims description 3
- 229910010037 TiAlN Inorganic materials 0.000 claims description 3
- 229910008482 TiSiN Inorganic materials 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 claims description 3
- DQQNMIPXXNPGCV-UHFFFAOYSA-N 3-hexyne Chemical class CCC#CCC DQQNMIPXXNPGCV-UHFFFAOYSA-N 0.000 claims description 2
- 229910052794 bromium Inorganic materials 0.000 claims description 2
- 229910052801 chlorine Inorganic materials 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- 238000002347 injection Methods 0.000 claims description 2
- 239000007924 injection Substances 0.000 claims description 2
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 claims description 2
- 238000007517 polishing process Methods 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052789 astatine Inorganic materials 0.000 claims 1
- 229910021474 group 7 element Inorganic materials 0.000 claims 1
- 230000003014 reinforcing effect Effects 0.000 claims 1
- 238000009834 vaporization Methods 0.000 claims 1
- 230000008016 vaporization Effects 0.000 claims 1
- 239000006200 vaporizer Substances 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 2
- 230000008021 deposition Effects 0.000 description 4
- 238000003426 chemical strengthening reaction Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 230000002787 reinforcement Effects 0.000 description 2
- 239000012691 Cu precursor Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
- H01L21/76862—Bombardment with particles, e.g. treatment in noble gas plasmas; UV irradiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76876—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for deposition from the gas phase, e.g. CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
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- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (22)
- 소정의 하부 구조가 형성된 반도체 기판 상부에 층간 절연막을 형성하고 상기 층간 절연막에 다마신 패턴을 형성하는 단계와,상기 다마신 패턴이 형성된 전체 구조 상부에 확산 방지막을 형성하는 단계와,상기 확산 방지막상에 화학적 강화제 처리를 실시하여 상기 확산 방지막 상부에 화학적 강화제층을 형성하는 단계와,상기 화학적 강화제층을 형성한 후 플라즈마 처리를 실시하는 단계와,상기 다마신 패턴이 매립되도록 전체 구조 상부에 구리 박막을 형성하는 단계와,상기 층간 절연막의 상부 표면이 노출되도록 연마 공정을 실시하여 상기 다마신 패턴 내에만 구리 박막이 잔류되도록 하는 단계를 포함하여 이루어지는 것을 특징으로 하는 반도체 소자의 금속 배선 형성 방법.
- 제 1 항에 있어서, 상기 다마신 패턴을 형성한 후 세정 공정을 실시하는 단계를 더 포함하는 것을 특징으로 하는 반도체 소자의 금속 배선 형성 방법.
- 제 2 항에 있어서, 상기 세정 공정은 하지층이 텅스텐, 알루미늄 등으로 된 금속층인 경우에는 RF 플라즈마를 이용하여 실시하고, 하지층이 구리로 된 금속층인 경우에는 반응성 세정 방법을 적용하여 실시하는 것을 특징으로 하는 반도체 소자의 금속 배선 형성 방법.
- 제 1 항에 있어서, 상기 확산 방지막은 TiN막을 이온화 PVD 방법, CVD 방법 및 MOCVD 방법 중 어느 하나의 방법으로 증착하여 형성하거나, Ta막 또는 TaN막을 이온화 PVD 방법 또는 CVD 방법으로 증착하여 형성하거나, WN막을 CVD 방법으로 증착하여 형성하거나, TiAlN막, TiSiN막 및 TaSiN막 중 어느 하나를 PVD 방법 또는 CVD 방법으로 증착하여 형성하는 것을 특징으로 하는 반도체 소자의 금속 배선 형성 방법.
- 제 1 항에 있어서, 상기 화학적 강화제 처리 이전에 플라즈마 처리를 실시하는 단계를 더 포함하는 것을 특징으로 하는 반도체 소자의 금속 배선 형성 방법.
- 제 1 항에 있어서, 상기 화학적 강화제는 요오드 함유 액체 화합물,Hhfac1/2H2O, Hhfac, TMVS, 순수 요오드, 요오드 함유 가스, 수증기, F, Cl, Br, I, At 등 7족 원소의 액체 및 가스, 그리고 그 화합물의 액체 및 가스 상태 중 어느 하나를 이용하는 것을 특징으로 하는 반도체 소자의 금속 배선 형성 방법.
- 제 1 항에 있어서, 상기 화학적 강화제 처리는 1초 내지 10분 동안 실시하는 것을 특징으로 하는 반도체 소자의 금속 배선 형성 방법.
- 제 1 항에 있어서, 상기 화학적 강화제 처리는 -20 내지 300℃의 온도에서 실시하는 것을 특징으로 하는 반도체 소자의 금속 배선 형성 방법.
- 제 8 항에 있어서, 상기 화학적 강화제 처리는 100 내지 220℃의 온도에서 실시하는 것을 특징으로 하는 반도체 소자의 금속 배선 형성 방법.
- 제 1 항 또는 제 5 항에 있어서, 상기 플라즈마 처리는 이중 주파수 플라즈마 처리, 원격 플라즈마 또는 플라즈마 식각 방법으로 실시하는 것을 특징으로 하는 반도체 소자의 금속 배선 형성 방법.
- 제 10 항에 있어서, 상기 이중 주파수 플라즈마 처리는 -50 내지 300℃의 온도에서 0 내지 1000W의 고주파와 0 내지 1000W의 저주파를 1초 내지 10분 동안 인가하여 실시하는 것을 특징으로 하는 반도체 소자의 금속 배선 형성 방법.
- 제 10 항에 있어서, 상기 원격 플라즈마 처리 또는 플라즈마 식각 방법은 수소, 아르곤, 질소, 헬륨의 단일 가스를 이용하여 실시하거나 수소와 아르곤 혼합가스를 이용하여 실시하는 것을 특징으로 하는 반도체 소자의 금속 배선 형성 방법.
- 제 12 항에 있어서, 상기 수소, 질소, 아르곤 및 헬륨의 단일 가스는 각각 5 내지 1000sccm의 양으로 유입시키는 것을 특징으로 하는 반도체 소자의 금속 배선 형성 방법.
- 제 12 항에 있어서, 상기 혼합 가스는 5 내지 95%의 수소와 5 내지 95%의 아르곤의 혼합 가스인 것을 특징으로 하는 반도체 소자의 금속 배선 형성 방법.
- 제 10 항에 있어서, 상기 원격 플라즈마 처리 또는 플라즈마 식각 방법은 단일로 실시하거나 1 내지 10회의 다단계로 실시하는 것을 특징으로 하는 반도체 소자의 금속 배선 형성 방법.
- 제 15 항에 있어서, 상기 단일 플라즈마 처리는 단일 가스 또는 혼합 가스를 이용하여 실시하는 것을 특징으로 하는 반도체 소자의 금속 배선 형성 방법.
- 제 15 항에 있어서, 상기 다단계 플라즈마 처리는 아르곤 단일 가스 또는 혼합 가스를 이용하여 처리한 후, 수소 가스를 이용하여 최종 처리하는 주기를 1 내지 10회 반복 실시하는 것을 특징으로 하는 반도체 소자의 금속 배선 형성 방법.
- 제 10 항에 있어서, 상기 원격 플라즈마 처리 또는 플라즈마 식각 방법은 50 내지 700W의 전력을 인가하여 1초 내지 10분 동안 실시하는 것을 특징으로 하는 반도체 소자의 금속 배선 형성 방법.
- 제 10 항에 있어서, 상기 원격 플라즈마 처리 또는 플라즈마 식각 방법은 웨이퍼의 온도는 10 내지 350℃로 유지하고, 웨이퍼와 샤워 헤드의 간격은 5 내지 50㎜로 하며, 챔버 내의 압력은 0.3 내지 10Torr로 하는 것을 특징으로 하는 반도체 소자의 금속 배선 형성 방법.
- 제 1 항에 있어서, 상기 구리 박막은 (hfac)Cu(3-Hexyne) 계열, (hfac)CuMHY 게열, (hfac)CuDMCOD 계열, (hfac)CuVTMOS 계열, (hfac)CuDMB 계열, (hfac)CuTMVS 계열 중 어느 하나를 이용하여 형성하는 것을 특징으로 하는 반도체 소자의 금속 배선 형성 방법.
- 제 1 항에 있어서, 상기 구리 박막은 다이렉트 리퀴드 인젝션, 컨트롤 에바포레이션 믹서, 오리피스, 스프레이 방식의 기화기를 이용한 MOCVD법으로 증착하는 것을 특징으로 하는 반도체 소자의 금속 배선 형성 방법.
- 제 1 항에 있어서, 상기 구리 박막 대신에 알루미늄막 또는 텅스텐막을 형성하는 것을 특징으로 하는 반도체 소자의 금속 배선 형성 방법.
Priority Applications (7)
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KR1020000063161A KR100671610B1 (ko) | 2000-10-26 | 2000-10-26 | 반도체 소자의 금속 배선 형성 방법 |
TW090122383A TW515044B (en) | 2000-10-26 | 2001-09-10 | Method for forming metal line of semiconductor device |
GB0121858A GB2371148B (en) | 2000-10-26 | 2001-09-10 | Method for forming a metal line of a semiconductor device |
JP2001313549A JP4217012B2 (ja) | 2000-10-26 | 2001-10-11 | 半導体素子の金属配線形成方法 |
DE10150160.9A DE10150160B4 (de) | 2000-10-26 | 2001-10-11 | Verfahren zum Herstellen einer Metallleitung eines Halbleiterbauteils |
CNB011355972A CN1204618C (zh) | 2000-10-26 | 2001-10-25 | 形成半导体器件的金属线的方法 |
US09/983,668 US6551932B2 (en) | 2000-10-26 | 2001-10-25 | Method for forming metal line in a semiconductor device |
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KR1020000063161A KR100671610B1 (ko) | 2000-10-26 | 2000-10-26 | 반도체 소자의 금속 배선 형성 방법 |
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KR100671610B1 KR100671610B1 (ko) | 2007-01-18 |
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US (1) | US6551932B2 (ko) |
JP (1) | JP4217012B2 (ko) |
KR (1) | KR100671610B1 (ko) |
CN (1) | CN1204618C (ko) |
DE (1) | DE10150160B4 (ko) |
GB (1) | GB2371148B (ko) |
TW (1) | TW515044B (ko) |
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KR100383759B1 (ko) * | 2000-06-15 | 2003-05-14 | 주식회사 하이닉스반도체 | 반도체 소자의 구리 금속 배선 형성 방법 |
US7142882B2 (en) * | 2001-03-09 | 2006-11-28 | Schmidt Dominik J | Single chip wireless communication integrated circuit |
KR100487639B1 (ko) | 2002-12-11 | 2005-05-03 | 주식회사 하이닉스반도체 | 반도체소자의 금속배선 형성방법 |
CN1295776C (zh) * | 2003-12-24 | 2007-01-17 | 上海宏力半导体制造有限公司 | 可分别对双镶嵌工艺的中介窗与沟槽进行表面处理的方法 |
US7387962B2 (en) * | 2005-10-17 | 2008-06-17 | Samsung Electronics Co., Ltd | Physical vapor deposition methods for forming hydrogen-stuffed trench liners for copper-based metallization |
KR100794661B1 (ko) * | 2006-08-18 | 2008-01-14 | 삼성전자주식회사 | 기판 처리 장치 및 그 장치의 세정 방법 |
KR20100032644A (ko) * | 2008-09-18 | 2010-03-26 | 삼성전자주식회사 | 선택적 플라즈마 처리를 이용한 반도체 소자의 금속배선 형성방법 |
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TW365685B (en) * | 1996-10-31 | 1999-08-01 | Texas Instruments Inc | Low-temperature processes for depositing barrier films containing tungsten and nitrogen |
US5939334A (en) * | 1997-05-22 | 1999-08-17 | Sharp Laboratories Of America, Inc. | System and method of selectively cleaning copper substrate surfaces, in-situ, to remove copper oxides |
JPH11217671A (ja) * | 1998-01-28 | 1999-08-10 | Sony Corp | 金属膜の化学的気相成長方法およびこれを用いた電子装置の製造方法 |
US6319728B1 (en) * | 1998-06-05 | 2001-11-20 | Applied Materials, Inc. | Method for treating a deposited film for resistivity reduction |
EP0971403A1 (en) * | 1998-07-07 | 2000-01-12 | Interuniversitair Microelektronica Centrum Vzw | Method for forming copper-containing metal studs |
US6461675B2 (en) * | 1998-07-10 | 2002-10-08 | Cvc Products, Inc. | Method for forming a copper film on a substrate |
KR100566905B1 (ko) * | 1998-09-11 | 2006-07-03 | 에이에스엠지니텍코리아 주식회사 | 표면 촉매를 이용한 화학 증착방법_ |
JP2000087242A (ja) * | 1998-09-15 | 2000-03-28 | Sharp Corp | 水を添加して銅の伝導率を向上させるCu(hfac)TMVS前駆体 |
US6251759B1 (en) * | 1998-10-03 | 2001-06-26 | Applied Materials, Inc. | Method and apparatus for depositing material upon a semiconductor wafer using a transition chamber of a multiple chamber semiconductor wafer processing system |
JP3279532B2 (ja) * | 1998-11-06 | 2002-04-30 | 日本電気株式会社 | 半導体装置の製造方法 |
US6211085B1 (en) | 1999-02-18 | 2001-04-03 | Taiwan Semiconductor Company | Method of preparing CU interconnect lines |
US6133144A (en) | 1999-08-06 | 2000-10-17 | Taiwan Semiconductor Manufacturing Company | Self aligned dual damascene process and structure with low parasitic capacitance |
US6180524B1 (en) * | 1999-08-09 | 2001-01-30 | Gary W. Ferrell | Metal deposit process |
US6110817A (en) * | 1999-08-19 | 2000-08-29 | Taiwan Semiconductor Manufacturing Company | Method for improvement of electromigration of copper by carbon doping |
US6265319B1 (en) | 1999-09-01 | 2001-07-24 | Taiwan Semiconductor Manufacturing Company | Dual damascene method employing spin-on polymer (SOP) etch stop layer |
US6251786B1 (en) | 1999-09-07 | 2001-06-26 | Chartered Semiconductor Manufacturing Ltd. | Method to create a copper dual damascene structure with less dishing and erosion |
EP1247292B1 (en) * | 1999-12-15 | 2009-02-04 | Genitech Co., Ltd. | Method of forming copper interconnections and thin films using chemical vapor deposition with catalyst |
KR20010096408A (ko) * | 2000-04-11 | 2001-11-07 | 이경수 | 금속 배선 형성방법 |
KR100383759B1 (ko) * | 2000-06-15 | 2003-05-14 | 주식회사 하이닉스반도체 | 반도체 소자의 구리 금속 배선 형성 방법 |
KR100404941B1 (ko) * | 2000-06-20 | 2003-11-07 | 주식회사 하이닉스반도체 | 반도체 소자의 금속 배선 형성방법 |
KR100612543B1 (ko) * | 2000-06-26 | 2006-08-11 | 주식회사 하이닉스반도체 | 반도체 소자의 구리 금속배선 형성 방법 |
-
2000
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2001
- 2001-09-10 TW TW090122383A patent/TW515044B/zh not_active IP Right Cessation
- 2001-09-10 GB GB0121858A patent/GB2371148B/en not_active Expired - Fee Related
- 2001-10-11 DE DE10150160.9A patent/DE10150160B4/de not_active Expired - Fee Related
- 2001-10-11 JP JP2001313549A patent/JP4217012B2/ja not_active Expired - Fee Related
- 2001-10-25 CN CNB011355972A patent/CN1204618C/zh not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
---|---|
TW515044B (en) | 2002-12-21 |
GB0121858D0 (en) | 2001-10-31 |
CN1204618C (zh) | 2005-06-01 |
DE10150160B4 (de) | 2016-11-24 |
GB2371148B (en) | 2005-03-09 |
CN1351374A (zh) | 2002-05-29 |
US6551932B2 (en) | 2003-04-22 |
US20020052110A1 (en) | 2002-05-02 |
JP2002190524A (ja) | 2002-07-05 |
GB2371148A (en) | 2002-07-17 |
DE10150160A1 (de) | 2002-05-08 |
KR100671610B1 (ko) | 2007-01-18 |
JP4217012B2 (ja) | 2009-01-28 |
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