KR20020020234A - 전기-전도성 페이스트 및 이를 이용한 다층 세라믹전자부품 제조방법 - Google Patents
전기-전도성 페이스트 및 이를 이용한 다층 세라믹전자부품 제조방법 Download PDFInfo
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- KR20020020234A KR20020020234A KR1020010054817A KR20010054817A KR20020020234A KR 20020020234 A KR20020020234 A KR 20020020234A KR 1020010054817 A KR1020010054817 A KR 1020010054817A KR 20010054817 A KR20010054817 A KR 20010054817A KR 20020020234 A KR20020020234 A KR 20020020234A
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- 238000001035 drying Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49805—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers the leads being also applied on the sidewalls or the bottom of the substrate, e.g. leadless packages for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
- H01L23/49883—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials the conductive materials containing organic materials or pastes, e.g. for thick films
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0044—Mechanical working of the substrate, e.g. drilling or punching
- H05K3/0052—Depaneling, i.e. dividing a panel into circuit boards; Working of the edges of circuit boards
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/403—Edge contacts; Windows or holes in the substrate having plural connections on the walls thereof
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
- H05K3/4053—Through-connections; Vertical interconnect access [VIA] connections by thick-film techniques
- H05K3/4061—Through-connections; Vertical interconnect access [VIA] connections by thick-film techniques for via connections in inorganic insulating substrates
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Dispersion Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Manufacturing & Machinery (AREA)
- Conductive Materials (AREA)
- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
Description
Claims (12)
- 비어 홀 도체가 외부 전극 단자로 변환되도록, 상기 비어 홀 도체를 내부에 구비한 세라믹 그린 시트를 포함하는 적층 세라믹 그린 시트를 포함한 미가공 적층체를 제조하는 단계, 및 상기 비어 홀 도체가 위치하는 영역의 상기 미가공 적층체를 절단하여 절단된 표면에 상기 비어 홀 도체의 일부를 노출시키는 단계를 포함하는 다층 세라믹 전자부품을 제조하는 방법에 있어서 비어 홀 도체를 형성하는데 유용한 전기전도성 페이스트로서,용제 및 바인더를 포함한 약 5중량% 내지 18중량%의 유기 비히클;구형 또는 알갱이 모양의 입자 직경이 약 0.1 내지 50㎛인 약 80중량% 내지 93중량%의 전기전도성 금속 분말; 및상기 용제에 불용성이고 수분 흡수가 낮으며 입자 직경이 약 0.1 내지 50㎛인 약 2중량% 내지 10중량%의 수지 분말을 포함하는 것을 특징으로 하는 전기전도성 페이스트.
- 제 1 항에 있어서, 상기 전기전도성 금속 분말은 구리 분말인 것을 특징으로 하는 전기전도성 페이스트.
- 제 1 항 또는 제 2 항에 있어서, 상기 수지 분말은 폴리프로필렌 분말인 것을 특징으로 하는 전기전도성 페이스트.
- 전기전도성 금속 분말, 유기 비히클 및 약 2중량% 내지 10중량%의 폴리프로필렌 분말을 포함하는 것을 특징으로 하는 전기전도성 페이스트.
- 제 4 항에 있어서, 약 80중량% 내지 93중량%의 상기 전기전도성 금속 분말, 및 약 5중량% 내지 18중량%의 상기 유기 비히클을 포함하는 것을 특징으로 하는 전기전도성 페이스트.
- 제 5 항에 있어서, 상기 전기전도성 금속 분말은 구형 또는 알갱이 모양의 입자 직경이 약 0.1 내지 50㎛이며, 폴리프로필렌 분말은 입자 직경이 약 0.1 내지 50㎛인 것을 특징으로 하는 전기전도성 페이스트.
- 비어 홀 도체를 내부에 구비한 적어도 하나의 세라믹 그린 시트를 포함한 적층 세라믹 그린 시트를 포함한 미가공 적층체를 제공하고;상기 비어 홀 도체가 외부 전극 단자로 변환되도록, 상기 비어 홀 도체가 위치하는 영역의 상기 미가공 적층체를 절단하여 상기 절단된 표면에 상기 비어 홀 도체의 일부를 노출시키며; 그리고상기 절단된 면에 부분적으로 노출된 상기 비어 홀 도체를 가진 상기 미가공 적층체를 소성하는 것을 포함하고,상기 비어 홀 도체가 청구항 4항에 따른 전기전도성 페이스트로부터 형성된것을 특징으로 하는 다층 세라믹 전자부품 제조방법.
- 제 7 항에 있어서, 상기 비어 홀 도체의 일부를 노출시키기 위해 상기 비어 홀 도체가 위치하는 영역을 절단하면서 상기 영역의 근처에서 수용액을 분무하는 것을 특징으로 하는 다층 세라믹 전자부품 제조방법.
- 제 7 항 또는 제 8 항에 있어서, 상기 비어 홀 도체는 구리를 포함하는 것을 특징으로 하는 다층 세라믹 전자부품 제조방법.
- 비어 홀 도체를 내부에 구비한 적어도 하나의 세라믹 그린 시트를 포함한 적층 세라믹 그린 시트를 포함하는 미가공 적층체를 제공하고;상기 비어 홀 도체가 외부 전극 단자로 변환되도록, 상기 절단된 표면의 상기 비어 홀 도체의 일부를 노출시키기 위해 상기 비어 홀 도체가 위치하는 영역의 상기 미가공 적층체를 절단하며; 그리고상기 절단된 표면에 부분적으로 노출된 상기 비어 홀 도체를 가진 상기 미가공 적층체를 소성하는 것을 포함하고,상기 비어 홀 도체가 청구항 1항에 따른 전기전도성 페이스트로부터 형성되는 것을 특징으로 하는 다층 세라믹 전자부품 제조방법.
- 제 10 항에 있어서, 상기 비어 홀 도체의 일부를 노출시키기 위해 상기 비어홀 도체가 위치하는 영역을 절단하면서 상기 영역의 근처에 수용액을 분무하는 것을 특징으로 하는 다층 세라믹 전자부품 제조방법.
- 제 10 항 또는 제 11 항에 있어서, 상기 비어 홀 도체가 구리를 포함하는 것을 특징으로 하는 다층 세라믹 전자부품 제조방법.
Applications Claiming Priority (2)
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JPJP-P-2000-00271319 | 2000-09-07 | ||
JP2000271319A JP3757771B2 (ja) | 2000-09-07 | 2000-09-07 | 導電性ペーストおよびそれを用いる積層セラミック電子部品の製造方法 |
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KR20020020234A true KR20020020234A (ko) | 2002-03-14 |
KR100443664B1 KR100443664B1 (ko) | 2004-08-09 |
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KR10-2001-0054817A KR100443664B1 (ko) | 2000-09-07 | 2001-09-06 | 전기-전도성 페이스트 및 이를 이용한 다층 세라믹전자부품 제조방법 |
Country Status (6)
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US (1) | US6623663B2 (ko) |
JP (1) | JP3757771B2 (ko) |
KR (1) | KR100443664B1 (ko) |
CN (1) | CN1192696C (ko) |
DE (1) | DE10143919B4 (ko) |
TW (1) | TW516353B (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101412822B1 (ko) * | 2012-09-06 | 2014-06-27 | 삼성전기주식회사 | 외부전극용 전도성 페이스트, 이를 이용한 적층 세라믹 전자부품 및 이의 제조방법 |
US10147533B2 (en) | 2015-05-27 | 2018-12-04 | Samsung Electro-Mechanics Co., Ltd. | Inductor |
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US6855222B2 (en) * | 2002-06-19 | 2005-02-15 | Murata Manufacturing Co., Ltd. | Method for manufacturing laminated multilayer electronic components |
EP1775766A4 (en) * | 2004-08-06 | 2010-06-09 | Almt Corp | COLLECTIVE SUBSTRATE, MOUNTING MEMBER FOR A SEMICONDUCTOR ELEMENT, SEMICONDUCTOR ELEMENT, ILLUMINATING DEVICE, ILLUMINATED DIODE COMPONENT AND LED LUMINAIRE |
US20060054190A1 (en) | 2004-09-14 | 2006-03-16 | Bti Holding, Inc. | Plate washing system with ultrasonic cleaning of pipes |
US7442879B2 (en) * | 2005-07-11 | 2008-10-28 | Endicott Interconect Technologies, Inc. | Circuitized substrate with solder-coated microparticle paste connections, multilayered substrate assembly, electrical assembly and information handling system utilizing same and method of making said substrate |
US7342183B2 (en) * | 2005-07-11 | 2008-03-11 | Endicott Interconnect Technologies, Inc. | Circuitized substrate with sintered paste connections, multilayered substrate assembly, electrical assembly and information handling system utilizing same |
US7334323B2 (en) * | 2005-07-11 | 2008-02-26 | Endicott Interconnect Technologies, Inc. | Method of making mutilayered circuitized substrate assembly having sintered paste connections |
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US7629559B2 (en) * | 2005-12-19 | 2009-12-08 | Endicott Interconnect Technologies, Inc. | Method of improving electrical connections in circuitized substrates |
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- 2001-09-06 KR KR10-2001-0054817A patent/KR100443664B1/ko active IP Right Grant
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KR101412822B1 (ko) * | 2012-09-06 | 2014-06-27 | 삼성전기주식회사 | 외부전극용 전도성 페이스트, 이를 이용한 적층 세라믹 전자부품 및 이의 제조방법 |
US10147533B2 (en) | 2015-05-27 | 2018-12-04 | Samsung Electro-Mechanics Co., Ltd. | Inductor |
Also Published As
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JP2002083515A (ja) | 2002-03-22 |
KR100443664B1 (ko) | 2004-08-09 |
DE10143919A1 (de) | 2002-04-25 |
JP3757771B2 (ja) | 2006-03-22 |
DE10143919B4 (de) | 2009-04-09 |
CN1348329A (zh) | 2002-05-08 |
CN1192696C (zh) | 2005-03-09 |
US6623663B2 (en) | 2003-09-23 |
US20020050586A1 (en) | 2002-05-02 |
TW516353B (en) | 2003-01-01 |
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