KR20010040659A - 배선, 이를 사용한 박막 트랜지스터 기판, 및 그제조방법과 액정표시장치 - Google Patents
배선, 이를 사용한 박막 트랜지스터 기판, 및 그제조방법과 액정표시장치 Download PDFInfo
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- KR20010040659A KR20010040659A KR1020007008531A KR20007008531A KR20010040659A KR 20010040659 A KR20010040659 A KR 20010040659A KR 1020007008531 A KR1020007008531 A KR 1020007008531A KR 20007008531 A KR20007008531 A KR 20007008531A KR 20010040659 A KR20010040659 A KR 20010040659A
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- film
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- titanium
- copper
- electrode
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- 239000000758 substrate Substances 0.000 title claims abstract description 238
- 239000010409 thin film Substances 0.000 title claims abstract description 131
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 34
- 238000000034 method Methods 0.000 title claims description 96
- 238000004519 manufacturing process Methods 0.000 title claims description 61
- 239000010408 film Substances 0.000 claims abstract description 857
- 239000010949 copper Substances 0.000 claims abstract description 329
- 229910052802 copper Inorganic materials 0.000 claims abstract description 225
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 224
- 239000010936 titanium Substances 0.000 claims abstract description 154
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 120
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 107
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 62
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 59
- 229910052751 metal Inorganic materials 0.000 claims description 116
- 238000000137 annealing Methods 0.000 claims description 112
- 239000002184 metal Substances 0.000 claims description 112
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 80
- 239000011651 chromium Substances 0.000 claims description 56
- 230000015572 biosynthetic process Effects 0.000 claims description 55
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 50
- 229910052804 chromium Inorganic materials 0.000 claims description 44
- 229910052760 oxygen Inorganic materials 0.000 claims description 25
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 24
- 229910052750 molybdenum Inorganic materials 0.000 claims description 23
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 22
- 239000011733 molybdenum Substances 0.000 claims description 21
- 238000000059 patterning Methods 0.000 claims description 21
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 20
- 239000001301 oxygen Substances 0.000 claims description 20
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims description 19
- 229910000423 chromium oxide Inorganic materials 0.000 claims description 19
- 229910052715 tantalum Inorganic materials 0.000 claims description 19
- 238000001020 plasma etching Methods 0.000 claims description 9
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims description 6
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims description 6
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 6
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 225
- 230000008569 process Effects 0.000 description 60
- 239000011521 glass Substances 0.000 description 55
- 239000004065 semiconductor Substances 0.000 description 54
- 238000005530 etching Methods 0.000 description 52
- 125000004430 oxygen atom Chemical group O* 0.000 description 50
- 238000012360 testing method Methods 0.000 description 50
- 239000000203 mixture Substances 0.000 description 36
- 230000000052 comparative effect Effects 0.000 description 31
- 238000009792 diffusion process Methods 0.000 description 31
- 229910021417 amorphous silicon Inorganic materials 0.000 description 28
- 239000007789 gas Substances 0.000 description 28
- 239000007788 liquid Substances 0.000 description 27
- 238000000151 deposition Methods 0.000 description 26
- 238000004544 sputter deposition Methods 0.000 description 26
- 230000008021 deposition Effects 0.000 description 25
- 238000002161 passivation Methods 0.000 description 23
- 238000000576 coating method Methods 0.000 description 21
- 238000010586 diagram Methods 0.000 description 21
- 239000000463 material Substances 0.000 description 21
- 239000012528 membrane Substances 0.000 description 21
- 238000005229 chemical vapour deposition Methods 0.000 description 20
- 239000011248 coating agent Substances 0.000 description 19
- 238000004458 analytical method Methods 0.000 description 17
- 125000004429 atom Chemical group 0.000 description 15
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 14
- 230000004888 barrier function Effects 0.000 description 13
- 230000007797 corrosion Effects 0.000 description 12
- 238000005260 corrosion Methods 0.000 description 12
- 230000005284 excitation Effects 0.000 description 11
- 230000008859 change Effects 0.000 description 10
- 230000000694 effects Effects 0.000 description 10
- 239000004020 conductor Substances 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 9
- 239000011241 protective layer Substances 0.000 description 9
- 230000001590 oxidative effect Effects 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- 229910000838 Al alloy Inorganic materials 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 7
- 230000007547 defect Effects 0.000 description 7
- 238000012546 transfer Methods 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000009413 insulation Methods 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 5
- 238000011835 investigation Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- SOQBVABWOPYFQZ-UHFFFAOYSA-N oxygen(2-);titanium(4+) Chemical class [O-2].[O-2].[Ti+4] SOQBVABWOPYFQZ-UHFFFAOYSA-N 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000010953 base metal Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000011068 loading method Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 150000003608 titanium Chemical class 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000004630 atomic force microscopy Methods 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 150000001844 chromium Chemical class 0.000 description 1
- UOUJSJZBMCDAEU-UHFFFAOYSA-N chromium(3+);oxygen(2-) Chemical class [O-2].[O-2].[O-2].[Cr+3].[Cr+3] UOUJSJZBMCDAEU-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 239000005001 laminate film Substances 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/13629—Multilayer wirings
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/136295—Materials; Compositions; Manufacture processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
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- Liquid Crystal (AREA)
Abstract
Description
Claims (20)
- 동층(Cu layer)의 주위에 티탄 또는 티탄 산화물로 이루어지는 피막을 갖는 배선.
- 동층의 주위에 몰리브덴 또는 몰리브덴 산화물로 이루어지는 피막을 갖는 배선.
- 동층의 주위에 크롬 또는 크롬 산화물로 이루어지는 피막을 갖는 배선.
- 동층의 주위에 탄탈 또는 탄탈 산화물로 이루어지는 피막을 갖는 배선.
- 제1항에 있어서,상기 피막은 티탄막과 티탄 산화물로 이루어지는 막을 갖는 배선.
- 제1항에 있어서,상기 피막은 상기 동층의 주위에 형성된 티탄막과 그 티탄막의 표면에 형성된 티탄 산화물로 이루어지는 막을 갖는 배선.
- 제1항에 있어서,상기 피막은 상기 동층 주위의 일부에 형성된 티탄막과 상기 동층 주위의 잔부에 형성된 티탄 산화물로 이루어지는 막을 갖는 배선.
- 제3항에 있어서,상기 피막은 크롬막과 크롬 산화물로 이루어지는 막을 갖는 배선.
- 제3항에 있어서,상기 피막은 상기 동층 주위에 형성된 크롬막과 그 크롬막의 표면에 형성된 크롬 산화물로 이루어지는 막을 갖는 배선.
- 제3항에 있어서,상기 피막은 상기 동층 주위의 일부에 형성된 크롬막과, 상기 동층 주위의 잔부에 형성된 크롬 산화물로 이루어지는 막을 갖는 배선.
- 제1항 내지 제4항 중 어느 한 항에 기재된 배선을 갖는 박막 트랜지스터 기판.
- 기판 상에 TiN막을 통하여 제1항에 기재된 배선을 형성한 박막 트랜지스터 기판.
- 동층의 표면에 티탄 또는 티탄 산화물로 이루어지는 피막을 갖는 배선이 베이스 상에 TiN막을 통하여 형성되는 박막 트랜지스터 기판.
- 제13항에 있어서,상기 배선의 피막은 상기 동층의 표면에 형성된 티탄막과 그 티탄막의 표면에 형성된 티탄 산화물로 이루어지는 막을 갖는 박막 트랜지스터 기판.
- 티탄, 몰리브덴, 크롬, 탄탈 중에서 선택된 어느 하나의 금속막을 형성한 베이스의 상기 금속막 상에 동으로 이루어지는 타겟을 사용하여 동막을 형성하고, 그 동막과 상기 금속막을 원하는 배선 형상으로 패터닝한 다음, 상기 베이스를 어닐링 처리하여 상기 패터닝한 동막 상에 티탄, 몰리브덴, 크롬, 탄탈 중에서 선택된 금속의 피막을 형성하는 박막 트랜지스터 기판 제조방법.
- 베이스 상에 TiN막을 형성하고, 상기 TiN막 상에 티탄 또는 티탄 산화물로 이루어지는 막을 형성한 다음, 상기 티탄 또는 티탄 산화물로 이루어지는 막 상에 동으로 이루어지는 타겟을 사용하여 동막을 형성하여 적층막으로 하고, 그 적층막을 원하는 배선 형상으로 패터닝한 다음, 상기 베이스를 어닐링 처리하여 상기 패터닝 한 동막 상에 티탄 또는 티탄 산화물로 이루어지는 피막을 형성하는 박막 트랜지스터 기판 제조방법.
- 제16항에 있어서,상기 TiN막 상에 성막하는 티탄 또는 티탄 산화물로 이루어지는 막의 두께를 10㎚ 내지 20㎚로 하는 박막 트랜지스터 기판 제조방법.
- 제15항 또는 제16항에 있어서,상기 피막이 산소를 함유하는 박막 트랜지스터 기판 제조방법.
- 제16항에 있어서,상기 동막 형성 전에 티탄 또는 티탄 산화물로 이루어지는 막의 표면에 생성한 티탄 산화층을 플라즈마 에칭에 의해 제거하는 박막 트랜지스터 기판 제조방법.
- 대향 배치된 1쌍의 기판 사이에 액정이 끼워져 유지되고, 상기 1쌍의 기판 중 한쪽이 제11항 내지 제13항 중 어느 한 항에 기재된 박막 트랜지스터 기판인 액정표시장치.
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
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JP37532098 | 1998-12-14 | ||
JP98-375320 | 1998-12-14 | ||
JP22469299 | 1999-08-06 | ||
JP99-224692 | 1999-08-06 | ||
PCT/JP1999/006877 WO2000036641A1 (en) | 1998-12-14 | 1999-12-08 | Wiring, thin-film transistor substrate with the wiring, method of manufacture thereof, and liquid crystal display device |
Publications (2)
Publication Number | Publication Date |
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KR20010040659A true KR20010040659A (ko) | 2001-05-15 |
KR100399556B1 KR100399556B1 (ko) | 2003-10-17 |
Family
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KR1020007008531A KR100399556B1 (ko) | 1998-12-14 | 1999-12-08 | 배선, 이를 사용한 박막 트랜지스터 기판, 및 그제조방법과 액정표시장치 |
Country Status (6)
Country | Link |
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US (2) | US6956236B1 (ko) |
EP (1) | EP1063693B1 (ko) |
JP (1) | JP4247772B2 (ko) |
KR (1) | KR100399556B1 (ko) |
TW (1) | TW452860B (ko) |
WO (1) | WO2000036641A1 (ko) |
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KR100897505B1 (ko) * | 2002-11-19 | 2009-05-15 | 삼성전자주식회사 | 액정 표시 장치의 박막 트랜지스터 기판 및 이의 제조 방법 |
KR100938885B1 (ko) * | 2003-06-30 | 2010-01-27 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이기판과 제조방법 |
KR101030526B1 (ko) * | 2004-03-16 | 2011-04-21 | 엘지디스플레이 주식회사 | 액정 표시 장치의 배선 형성 방법 및 이를 이용한 액정표시 장치의 제조 방법 |
KR20190124838A (ko) * | 2018-04-26 | 2019-11-06 | 삼성디스플레이 주식회사 | 배선 기판, 이를 포함하는 표시 장치 및 배선 기판의 제조 방법 |
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- 1999-12-08 KR KR1020007008531A patent/KR100399556B1/ko active IP Right Grant
- 1999-12-08 TW TW088121511A patent/TW452860B/zh not_active IP Right Cessation
- 1999-12-08 EP EP99959702.4A patent/EP1063693B1/en not_active Expired - Lifetime
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100866976B1 (ko) * | 2002-09-03 | 2008-11-05 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이기판과 제조방법 |
KR100897505B1 (ko) * | 2002-11-19 | 2009-05-15 | 삼성전자주식회사 | 액정 표시 장치의 박막 트랜지스터 기판 및 이의 제조 방법 |
KR100938885B1 (ko) * | 2003-06-30 | 2010-01-27 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이기판과 제조방법 |
KR101030526B1 (ko) * | 2004-03-16 | 2011-04-21 | 엘지디스플레이 주식회사 | 액정 표시 장치의 배선 형성 방법 및 이를 이용한 액정표시 장치의 제조 방법 |
KR20190124838A (ko) * | 2018-04-26 | 2019-11-06 | 삼성디스플레이 주식회사 | 배선 기판, 이를 포함하는 표시 장치 및 배선 기판의 제조 방법 |
Also Published As
Publication number | Publication date |
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TW452860B (en) | 2001-09-01 |
WO2000036641A1 (en) | 2000-06-22 |
EP1063693B1 (en) | 2016-06-29 |
US6956236B1 (en) | 2005-10-18 |
KR100399556B1 (ko) | 2003-10-17 |
US7804174B2 (en) | 2010-09-28 |
EP1063693A4 (en) | 2007-06-06 |
EP1063693A1 (en) | 2000-12-27 |
US20070102818A1 (en) | 2007-05-10 |
JP4247772B2 (ja) | 2009-04-02 |
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