WO2008081806A1 - 配線膜の形成方法、トランジスタ、及び電子装置 - Google Patents

配線膜の形成方法、トランジスタ、及び電子装置 Download PDF

Info

Publication number
WO2008081806A1
WO2008081806A1 PCT/JP2007/074931 JP2007074931W WO2008081806A1 WO 2008081806 A1 WO2008081806 A1 WO 2008081806A1 JP 2007074931 W JP2007074931 W JP 2007074931W WO 2008081806 A1 WO2008081806 A1 WO 2008081806A1
Authority
WO
WIPO (PCT)
Prior art keywords
film
wiring film
transistor
electronic device
metallic
Prior art date
Application number
PCT/JP2007/074931
Other languages
English (en)
French (fr)
Inventor
Satoru Takasawa
Masaki Takei
Hirohisa Takahashi
Hiroaki Katagiri
Sadayuki Ukishima
Noriaki Tani
Satoru Ishibashi
Tadashi Masuda
Original Assignee
Ulvac, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac, Inc. filed Critical Ulvac, Inc.
Priority to KR1020097008421A priority Critical patent/KR101135418B1/ko
Priority to EP07860160.6A priority patent/EP2096666A4/en
Priority to JP2008552119A priority patent/JP5017282B2/ja
Priority to KR1020117011099A priority patent/KR101073421B1/ko
Priority to CN2007800404022A priority patent/CN101529566B/zh
Publication of WO2008081806A1 publication Critical patent/WO2008081806A1/ja
Priority to US12/475,907 priority patent/US8218122B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53233—Copper alloys
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/14—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
    • H05K3/16—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation by cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/388—Improvement of the adhesion between the insulating substrate and the metal by the use of a metallic or inorganic thin film adhesion layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • Physical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Liquid Crystal (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

　密着性とバリア性に優れ、抵抗値が低い配線膜を形成する。成膜対象物２１が配置された真空槽２に酸素ガスを導入し、酸素を含む真空雰囲気中で、銅を主成分とし、Ｍｇと、Ａｌと、Ｓｉと、Ｂｅと、Ｃａと、Ｓｒと、Ｂａと、Ｒａと、Ｓｃと、Ｙと、Ｌａと、Ｃｅと、Ｐｒと、Ｎｄと、Ｐｍと、Ｓｍと、Ｅｕと、Ｇｄと、Ｔｂと、Ｄｙとからなる添加元素群より選択される少なくとも１種類の添加元素が含有されたスパッタリングターゲット１１をスパッタリングし、成膜対象物２１の表面に第一の金属膜２３を成膜した後、酸素ガスの導入を停止した状態でスパッタリングターゲット１１をスパッタリングし、第一の金属膜２３の表面に第二の金属膜２４を形成した後、第一、第二の金属膜２３、２４をエッチングして配線膜を形成する。
PCT/JP2007/074931 2006-12-28 2007-12-26 配線膜の形成方法、トランジスタ、及び電子装置 WO2008081806A1 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020097008421A KR101135418B1 (ko) 2006-12-28 2007-12-26 배선막의 형성 방법, 트랜지스터, 및 전자 장치
EP07860160.6A EP2096666A4 (en) 2006-12-28 2007-12-26 METHOD FOR PRODUCING A WIRING FOIL, TRANSISTOR AND ELECTRONIC DEVICE
JP2008552119A JP5017282B2 (ja) 2006-12-28 2007-12-26 配線膜の形成方法
KR1020117011099A KR101073421B1 (ko) 2006-12-28 2007-12-26 배선막의 형성 방법, 트랜지스터, 및 전자 장치
CN2007800404022A CN101529566B (zh) 2006-12-28 2007-12-26 布线膜的形成方法、晶体管及电子装置
US12/475,907 US8218122B2 (en) 2006-12-28 2009-06-01 Method for forming wiring film, transistor and electronic device

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2006-354860 2006-12-28
JP2006-354859 2006-12-28
JP2006354860 2006-12-28
JP2006354859 2006-12-28

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/475,907 Continuation US8218122B2 (en) 2006-12-28 2009-06-01 Method for forming wiring film, transistor and electronic device

Publications (1)

Publication Number Publication Date
WO2008081806A1 true WO2008081806A1 (ja) 2008-07-10

Family

ID=39588489

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/074931 WO2008081806A1 (ja) 2006-12-28 2007-12-26 配線膜の形成方法、トランジスタ、及び電子装置

Country Status (7)

Country Link
US (1) US8218122B2 (ja)
EP (1) EP2096666A4 (ja)
JP (1) JP5017282B2 (ja)
KR (2) KR101135418B1 (ja)
CN (1) CN101529566B (ja)
TW (1) TWI430396B (ja)
WO (1) WO2008081806A1 (ja)

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008311283A (ja) * 2007-06-12 2008-12-25 Mitsubishi Materials Corp 密着性に優れた配線下地膜およびこの配線下地膜を形成するためのスパッタリングターゲット
JP2009043797A (ja) * 2007-08-07 2009-02-26 Mitsubishi Materials Corp 薄膜トランジスター
JP2009170769A (ja) * 2008-01-18 2009-07-30 Mitsubishi Materials Corp 薄膜トランジスター
JP2010040535A (ja) * 2008-07-31 2010-02-18 Mitsubishi Materials Corp 薄膜トランジスター
JP2010040536A (ja) * 2008-07-31 2010-02-18 Mitsubishi Materials Corp 薄膜トランジスター
JP2010045322A (ja) * 2008-02-19 2010-02-25 Mitsubishi Materials Corp 薄膜トランジスター
JP2010066529A (ja) * 2008-09-11 2010-03-25 Hitachi Displays Ltd 液晶表示装置、及びその製造方法
JP2010080681A (ja) * 2008-09-26 2010-04-08 Mitsubishi Materials Corp 薄膜トランジスター
JP2010103324A (ja) * 2008-10-24 2010-05-06 Mitsubishi Materials Corp バリア膜とドレイン電極膜およびソース電極膜が高い密着強度を有する薄膜トランジスター
WO2010082638A1 (ja) * 2009-01-16 2010-07-22 株式会社神戸製鋼所 Ｃｕ合金膜および表示デバイス
WO2010082637A1 (ja) * 2009-01-16 2010-07-22 株式会社神戸製鋼所 表示装置
JP2010165955A (ja) * 2009-01-16 2010-07-29 Kobe Steel Ltd Ｃｕ合金膜および表示デバイス
JP2010212465A (ja) * 2009-03-11 2010-09-24 Mitsubishi Materials Corp バリア層を構成層とする薄膜トランジスターおよび前記バリア層のスパッタ成膜に用いられるＣｕ合金スパッタリングターゲット
WO2010143609A1 (ja) * 2009-06-12 2010-12-16 株式会社アルバック 電子装置の形成方法、電子装置、半導体装置及びトランジスタ
WO2011024770A1 (ja) * 2009-08-26 2011-03-03 株式会社アルバック 半導体装置、半導体装置を有する液晶表示装置、半導体装置の製造方法
WO2011024704A1 (ja) * 2009-08-28 2011-03-03 株式会社アルバック 配線層、半導体装置、液晶表示装置
JP2011049505A (ja) * 2009-08-28 2011-03-10 Mitsubishi Materials Corp 半導体装置、その製造方法及びその製造方法に用いるスパッタリングターゲット
WO2011052471A1 (ja) * 2009-10-27 2011-05-05 株式会社アルバック 配線層、半導体装置、半導体装置を有する液晶表示装置
KR101184240B1 (ko) 2008-10-24 2012-09-21 가부시키가이샤 알박 박막 트랜지스터의 제조 방법, 박막 트랜지스터
JP2013503459A (ja) * 2009-08-26 2013-01-31 ヘレーウス マテリアルズ テクノロジー ゲゼルシャフト ミット ベシュレンクテル ハフツング ウント コンパニー コマンディートゲゼルシャフト 銅電極を有する薄膜トランジスタ（ｔｆｔ）
JP2013179265A (ja) * 2012-01-31 2013-09-09 Hitachi Metals Ltd 電子部品用積層配線膜
JP2013541192A (ja) * 2010-09-03 2013-11-07 アプライド マテリアルズ インコーポレイテッド スタガー薄膜トランジスタおよびその形成方法
US8624397B2 (en) 2009-06-12 2014-01-07 Mitsubishi Materials Corporation Electrode layer structure for a thin-film transistor and process for manufacture thereof
JP2015065471A (ja) * 2009-10-09 2015-04-09 株式会社半導体エネルギー研究所 半導体装置
JP2019114799A (ja) * 2008-11-07 2019-07-11 株式会社半導体エネルギー研究所 半導体装置

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2910443A1 (en) 2010-03-14 2011-09-14 Titan Logix Corp. System and method for measuring and metering deicing fluid from a tank using a refractometer module
CN104064454A (zh) 2014-06-11 2014-09-24 京东方科技集团股份有限公司 薄膜及阵列基板的制备方法、阵列基板
CN106910780B (zh) * 2017-05-08 2020-12-11 京东方科技集团股份有限公司 薄膜晶体管及制造方法、阵列基板、显示面板、显示装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06333925A (ja) * 1993-05-20 1994-12-02 Nippon Steel Corp 半導体集積回路及びその製造方法
JPH1012151A (ja) 1996-04-25 1998-01-16 Lg Electron Inc プラズマディスプレイパネルの電極及びその形成方法
JPH1154458A (ja) * 1997-05-08 1999-02-26 Applied Materials Inc メタライゼーション構造体
JP2002091338A (ja) * 2000-09-12 2002-03-27 Toshiba Corp アレイ基板およびその製造方法ならびに液晶表示素子
JP2005158887A (ja) 2003-11-21 2005-06-16 Dept Corp 回路基板及びその製造方法
JP2006148040A (ja) * 2004-11-17 2006-06-08 Samsung Electronics Co Ltd 薄膜トランジスタ表示板及びその製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4354911A (en) * 1981-08-07 1982-10-19 Western Electric Company Inc. Method of selectively depositing a metal on a surface by means of sputtering
US5944037A (en) * 1996-10-16 1999-08-31 Samsung Electronics Co., Ltd. Water spray apparatus for tableware washing machine
CN1148600C (zh) 1996-11-26 2004-05-05 三星电子株式会社 薄膜晶体管基片及其制造方法
US6037257A (en) * 1997-05-08 2000-03-14 Applied Materials, Inc. Sputter deposition and annealing of copper alloy metallization
WO2000036641A1 (en) * 1998-12-14 2000-06-22 Frontec Incorporated Wiring, thin-film transistor substrate with the wiring, method of manufacture thereof, and liquid crystal display device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06333925A (ja) * 1993-05-20 1994-12-02 Nippon Steel Corp 半導体集積回路及びその製造方法
JPH1012151A (ja) 1996-04-25 1998-01-16 Lg Electron Inc プラズマディスプレイパネルの電極及びその形成方法
JPH1154458A (ja) * 1997-05-08 1999-02-26 Applied Materials Inc メタライゼーション構造体
JP2002091338A (ja) * 2000-09-12 2002-03-27 Toshiba Corp アレイ基板およびその製造方法ならびに液晶表示素子
JP2005158887A (ja) 2003-11-21 2005-06-16 Dept Corp 回路基板及びその製造方法
JP2006148040A (ja) * 2004-11-17 2006-06-08 Samsung Electronics Co Ltd 薄膜トランジスタ表示板及びその製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2096666A4

Cited By (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008311283A (ja) * 2007-06-12 2008-12-25 Mitsubishi Materials Corp 密着性に優れた配線下地膜およびこの配線下地膜を形成するためのスパッタリングターゲット
JP2009043797A (ja) * 2007-08-07 2009-02-26 Mitsubishi Materials Corp 薄膜トランジスター
JP2009170769A (ja) * 2008-01-18 2009-07-30 Mitsubishi Materials Corp 薄膜トランジスター
JP2010045322A (ja) * 2008-02-19 2010-02-25 Mitsubishi Materials Corp 薄膜トランジスター
JP2010040536A (ja) * 2008-07-31 2010-02-18 Mitsubishi Materials Corp 薄膜トランジスター
JP2010040535A (ja) * 2008-07-31 2010-02-18 Mitsubishi Materials Corp 薄膜トランジスター
JP2010066529A (ja) * 2008-09-11 2010-03-25 Hitachi Displays Ltd 液晶表示装置、及びその製造方法
KR101527626B1 (ko) * 2008-09-26 2015-06-09 미쓰비시 마테리알 가부시키가이샤 박막 트랜지스터 및 박막 트랜지스터 중간체
JP2010080681A (ja) * 2008-09-26 2010-04-08 Mitsubishi Materials Corp 薄膜トランジスター
US20110133190A1 (en) * 2008-09-26 2011-06-09 Mitsubishi Materials Corporation Thin-film transistor and intermediate of thin-film transistor
CN102165596B (zh) * 2008-09-26 2014-07-09 三菱综合材料株式会社 薄膜晶体管及薄膜晶体管中间体
TWI476930B (zh) * 2008-09-26 2015-03-11 Mitsubishi Materials Corp 薄膜電晶體及薄膜電晶體中間體
US8502285B2 (en) * 2008-09-26 2013-08-06 Mitsubishi Materials Corporation Thin-film transistor and intermediate of thin-film transistor
CN102165596A (zh) * 2008-09-26 2011-08-24 三菱综合材料株式会社 薄膜晶体管及薄膜晶体管中间体
JP2010103324A (ja) * 2008-10-24 2010-05-06 Mitsubishi Materials Corp バリア膜とドレイン電極膜およびソース電極膜が高い密着強度を有する薄膜トランジスター
US8384083B2 (en) 2008-10-24 2013-02-26 Mitsubishi Materials Corporation Thin-film transistor having high adhesive strength between barrier film and drain electrode and source electrode films
JP5285710B2 (ja) * 2008-10-24 2013-09-11 三菱マテリアル株式会社 薄膜トランジスタの製造方法
US8470651B2 (en) 2008-10-24 2013-06-25 Mitsubishi Materials Corporation Method for producing a thin film transistor, and a thin film transistor
KR101184240B1 (ko) 2008-10-24 2012-09-21 가부시키가이샤 알박 박막 트랜지스터의 제조 방법, 박막 트랜지스터
JP2019114799A (ja) * 2008-11-07 2019-07-11 株式会社半導体エネルギー研究所 半導体装置
US11239332B2 (en) 2008-11-07 2022-02-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2011048323A (ja) * 2009-01-16 2011-03-10 Kobe Steel Ltd 表示装置用Ｃｕ合金膜および表示装置
CN102246311A (zh) * 2009-01-16 2011-11-16 株式会社神户制钢所 Cu合金膜以及显示设备
CN102265323A (zh) * 2009-01-16 2011-11-30 株式会社神户制钢所 显示装置
JP2010165955A (ja) * 2009-01-16 2010-07-29 Kobe Steel Ltd Ｃｕ合金膜および表示デバイス
US8482189B2 (en) 2009-01-16 2013-07-09 Kobe Steel, Ltd. Display device
WO2010082637A1 (ja) * 2009-01-16 2010-07-22 株式会社神戸製鋼所 表示装置
WO2010082638A1 (ja) * 2009-01-16 2010-07-22 株式会社神戸製鋼所 Ｃｕ合金膜および表示デバイス
JP2010212465A (ja) * 2009-03-11 2010-09-24 Mitsubishi Materials Corp バリア層を構成層とする薄膜トランジスターおよび前記バリア層のスパッタ成膜に用いられるＣｕ合金スパッタリングターゲット
US8624397B2 (en) 2009-06-12 2014-01-07 Mitsubishi Materials Corporation Electrode layer structure for a thin-film transistor and process for manufacture thereof
JPWO2010143609A1 (ja) * 2009-06-12 2012-11-22 株式会社アルバック 電子装置の形成方法、電子装置、半導体装置及びトランジスタ
CN102804341A (zh) * 2009-06-12 2012-11-28 株式会社爱发科 电子装置的形成方法、电子装置、半导体装置以及晶体管
WO2010143609A1 (ja) * 2009-06-12 2010-12-16 株式会社アルバック 電子装置の形成方法、電子装置、半導体装置及びトランジスタ
JP2013503459A (ja) * 2009-08-26 2013-01-31 ヘレーウス マテリアルズ テクノロジー ゲゼルシャフト ミット ベシュレンクテル ハフツング ウント コンパニー コマンディートゲゼルシャフト 銅電極を有する薄膜トランジスタ（ｔｆｔ）
CN102484137A (zh) * 2009-08-26 2012-05-30 株式会社爱发科 半导体装置、具有半导体装置的液晶显示装置、半导体装置的制造方法
WO2011024770A1 (ja) * 2009-08-26 2011-03-03 株式会社アルバック 半導体装置、半導体装置を有する液晶表示装置、半導体装置の製造方法
JP4970622B2 (ja) * 2009-08-26 2012-07-11 株式会社アルバック 半導体装置、半導体装置を有する液晶表示装置、半導体装置の製造方法
US8400594B2 (en) 2009-08-28 2013-03-19 Ulvac, Inc. Wiring layer, semiconductor device and liquid crystal display device
JP4970621B2 (ja) * 2009-08-28 2012-07-11 株式会社アルバック 配線層、半導体装置、液晶表示装置
JP2011049505A (ja) * 2009-08-28 2011-03-10 Mitsubishi Materials Corp 半導体装置、その製造方法及びその製造方法に用いるスパッタリングターゲット
WO2011024704A1 (ja) * 2009-08-28 2011-03-03 株式会社アルバック 配線層、半導体装置、液晶表示装置
JP2015065471A (ja) * 2009-10-09 2015-04-09 株式会社半導体エネルギー研究所 半導体装置
JP4913267B2 (ja) * 2009-10-27 2012-04-11 株式会社アルバック 配線層、半導体装置、半導体装置を有する液晶表示装置
TWI382541B (zh) * 2009-10-27 2013-01-11 Ulvac Inc 配線層、半導體裝置、具備有半導體裝置之液晶顯示裝置
WO2011052471A1 (ja) * 2009-10-27 2011-05-05 株式会社アルバック 配線層、半導体装置、半導体装置を有する液晶表示装置
US8373832B2 (en) 2009-10-27 2013-02-12 Ulvac, Inc. Wiring layer, semiconductor device, and liquid crystal display device using semiconductor device
JP2013541192A (ja) * 2010-09-03 2013-11-07 アプライド マテリアルズ インコーポレイテッド スタガー薄膜トランジスタおよびその形成方法
JP2013179265A (ja) * 2012-01-31 2013-09-09 Hitachi Metals Ltd 電子部品用積層配線膜

Also Published As

Publication number Publication date
KR20090075833A (ko) 2009-07-09
JPWO2008081806A1 (ja) 2010-04-30
CN101529566B (zh) 2011-11-16
JP5017282B2 (ja) 2012-09-05
US8218122B2 (en) 2012-07-10
KR101135418B1 (ko) 2012-04-17
KR20110074591A (ko) 2011-06-30
CN101529566A (zh) 2009-09-09
US20090303406A1 (en) 2009-12-10
KR101073421B1 (ko) 2011-10-17
TW200839946A (en) 2008-10-01
TWI430396B (zh) 2014-03-11
EP2096666A4 (en) 2015-11-18
EP2096666A1 (en) 2009-09-02

Similar Documents

Publication Publication Date Title
WO2008081806A1 (ja) 配線膜の形成方法、トランジスタ、及び電子装置
WO2008081805A1 (ja) 配線膜の形成方法、トランジスタ、及び電子装置
US9024322B2 (en) Wiring structure and display device
Ponon et al. Effect of deposition conditions and post deposition anneal on reactively sputtered titanium nitride thin films
CN104934483B (zh) 半导体元件及其制造方法
TWI373867B (en) Multilayer barrier stacks and methods of making multilayer barrier stacks
TW200601414A (en) Semiconductor device and manufacturing method thereof
CN104620365B (zh) 薄膜晶体管和显示装置
TWI427800B (zh) 薄膜電晶體之製造方法、薄膜電晶體
CN103972246A (zh) 布线结构以及具备布线结构的显示装置
US20150295058A1 (en) Thin-film transistor and manufacturing method therefor
US9496405B2 (en) Method for manufacturing semiconductor device including step of adding cation to oxide semiconductor layer
EP1990432A4 (en) SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREFOR, AND SPRAY TARGET MATERIAL FOR USE IN SAID METHOD
WO2007060640A3 (en) Method of forming a self aligned copper capping layer
WO2012033326A3 (ko) 다공성 세라믹 표면을 밀봉하는 치밀한 희토류 금속 산화물 코팅막 및 이의 제조방법
EP1156133A3 (en) Method of manufacturing a multilayered dielectric film and semiconductor device
TW200731572A (en) Nitride semiconductor device and method for manufacturing the same
EP1607989A3 (en) Ceramic electronic device and the production method
WO2008007732A1 (en) Method for manufacturing semiconductor device
TW200740289A (en) Organic electroluminescent element and its manufacturing method
Li et al. Effects of annealing on the magnetic properties and microstructures of Ta/Mo/CoFeB/MgO/Ta films
TW200503108A (en) Coating composition, porous siliceous film, producing method thereof, and semiconductor device
Wang et al. Sputtering fabrication of GdFeCo alloy films with perpendicular magnetic anisotropy
TW200503271A (en) Semiconductor device, manufacturing method thereof, and manufacturing method of metallic compound thin film
EP3751264A3 (en) Carbon dioxide gas sensor

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200780040402.2

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07860160

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2008552119

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: KR

Ref document number: 1020097008421

Country of ref document: KR

REEP Request for entry into the european phase

Ref document number: 2007860160

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 2007860160

Country of ref document: EP

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 1020117011099

Country of ref document: KR