KR20010007247A - 전기 광학 장치, 전자 장치, 및 전기 광학 장치 제조방법 - Google Patents
전기 광학 장치, 전자 장치, 및 전기 광학 장치 제조방법 Download PDFInfo
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- KR20010007247A KR20010007247A KR1020000030801A KR20000030801A KR20010007247A KR 20010007247 A KR20010007247 A KR 20010007247A KR 1020000030801 A KR1020000030801 A KR 1020000030801A KR 20000030801 A KR20000030801 A KR 20000030801A KR 20010007247 A KR20010007247 A KR 20010007247A
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- Prior art keywords
- film
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- electro
- optical device
- insulating film
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- QLOAVXSYZAJECW-UHFFFAOYSA-N methane;molecular fluorine Chemical compound C.FF QLOAVXSYZAJECW-UHFFFAOYSA-N 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229910052696 pnictogen Inorganic materials 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical compound C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 235000021286 stilbenes Nutrition 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(ii) oxide Chemical class [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- HGCGQDMQKGRJNO-UHFFFAOYSA-N xenon monochloride Chemical compound [Xe]Cl HGCGQDMQKGRJNO-UHFFFAOYSA-N 0.000 description 1
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- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
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Abstract
Description
Claims (59)
- EL 소자가 B(붕소), C(카본), 및 N(질소)로 이루어진 그룹으로부터 선택되는 적어도 하나의 소자와, Al(알루미늄), Si(실리콘) 및 P(인)로 이루어진 그룹으로부터 선택되는 적어도 하나의 소자를 포함하는 절연막과 접촉하는 전기 광학 장치.
- EL 소자가 질화 알루미늄, 탄화 실리콘, 질화 실리콘, 질화 붕소, 인화 붕소 및 산화 알루미늄으로 이루어진 그룹으로부터 선택되는 하나를 포함하는 절연막과 접촉하는 전기 광학 장치.
- EL 소자가 Si, Al, N, O 및 M을 포함하는 절연막과 접촉하고, 상기 M은 희소 접지 소자 특히, Ce(세륨), Yb(이터븀), Sm(사마륨), Er(에르븀), Y(이트륨), La(란타늄), Gd(가도리늄), Dy(디스프로슘) 및 Nd(네오디뮴)로 이루어진 그룹으로부터 선택되는 소자인 전기 광학 장치.
- EL 소자가 카본 막과 접촉하는 전기 광학 장치.
- 제 4 항에 있어서, 상기 카본 막은 다이아몬드 막 또는 다이아몬드형 카본 막인 전기 광학 장치.
- EL 소자가 B(붕소), C(카본) 및 N(질소)으로 이루어진 그룹으로부터 선택되는 소자와, Al(알루미늄), Si(실리콘) 및 P(인)로 이루어진 그룹으로부터 선택되는 소자를 포함하는 절연막으로 둘러싸이는 전기 광학 장치.
- EL 소자가 질화 알루미늄, 탄화 실리콘, 질화 실리콘, 질화 붕소, 인화 붕소 및 산화 알루미늄으로 이루어진 그룹으로부터 선택되는 하나를 포함하는 절연막으로 둘러싸이는 전기 광학 장치.
- EL 소자가 Si, Al, N, O 및 M을 포함하는 절연막으로 둘러싸이고, 상기 M은 희소 접지 소자 특히, Ce(세륨), Yb(이터븀), Sm(사마륨), Er(에르븀), Y(이트륨), La(란타늄), Gd(가도리늄), Dy(디스프로슘) 및 Nd(네오디뮴)로 이루어진 그룹으로부터 선택되는 소자인 전기 광학 장치.
- EL 소자가 카본 막으로 둘러싸이는 전기 광학 장치.
- 제 9 항에 있어서, 상기 카본 막은 다이아몬드 막 또는 다이아몬드형 카본 막인 전기 광학 장치.
- 제 1 항에 있어서, 상기 EL 소자는 제 1 TFT에 전기적으로 접속되는 게이트를 갖는 제 2 TFT에 전기적으로 접속되는 전기 광학 장치.
- 제 2 항에 있어서, 상기 EL 소자는 제 1 TFT에 전기적으로 접속되는 게이트를 갖는 제 2 TFT에 전기적으로 접속되는 전기 광학 장치.
- 제 3 항에 있어서, 상기 EL 소자는 제 1 TFT에 전기적으로 접속되는 게이트를 갖는 제 2 TFT에 전기적으로 접속되는 전기 광학 장치.
- 제 4 항에 있어서, 상기 EL 소자는 제 1 TFT에 전기적으로 접속되는 게이트를 갖는 제 2 TFT에 전기적으로 접속되는 전기 광학 장치.
- 제 5 항에 있어서, 상기 EL 소자는 제 1 TFT에 전기적으로 접속되는 게이트를 갖는 제 2 TFT에 전기적으로 접속되는 전기 광학 장치.
- 제 6 항에 있어서, 상기 EL 소자는 제 1 TFT에 전기적으로 접속되는 게이트를 갖는 제 2 TFT에 전기적으로 접속되는 전기 광학 장치.
- 제 7 항에 있어서, 상기 EL 소자는 제 1 TFT에 전기적으로 접속되는 게이트를 갖는 제 2 TFT에 전기적으로 접속되는 전기 광학 장치.
- 제 8 항에 있어서, 상기 EL 소자는 제 1 TFT에 전기적으로 접속되는 게이트를 갖는 제 2 TFT에 전기적으로 접속되는 전기 광학 장치.
- 제 9 항에 있어서, 상기 EL 소자는 제 1 TFT에 전기적으로 접속되는 게이트를 갖는 제 2 TFT에 전기적으로 접속되는 전기 광학 장치.
- 제 11 항에 있어서, 상기 제 1 TFT는 스위칭 소자이고 상기 제 2 TFT는 전류 제어 소자인 전기 광학 장치.
- 제 12 항에 있어서, 상기 제 1 TFT는 스위칭 소자이고 상기 제 2 TFT는 전류 제어 소자인 전기 광학 장치.
- 제 13 항에 있어서, 상기 제 1 TFT는 스위칭 소자이고 상기 제 2 TFT는 전류 제어 소자인 전기 광학 장치.
- 제 14 항에 있어서, 상기 제 1 TFT는 스위칭 소자이고 상기 제 2 TFT는 전류 제어 소자인 전기 광학 장치.
- 제 15 항에 있어서, 상기 제 1 TFT는 스위칭 소자이고 상기 제 2 TFT는 전류 제어 소자인 전기 광학 장치.
- 제 16 항에 있어서, 상기 제 1 TFT는 스위칭 소자이고 상기 제 2 TFT는 전류 제어 소자인 전기 광학 장치.
- 제 17 항에 있어서, 상기 제 1 TFT는 스위칭 소자이고 상기 제 2 TFT는 전류 제어 소자인 전기 광학 장치.
- 제 18 항에 있어서, 상기 제 1 TFT는 스위칭 소자이고 상기 제 2 TFT는 전류 제어 소자인 전기 광학 장치.
- 제 19 항에 있어서, 상기 제 1 TFT는 스위칭 소자이고 상기 제 2 TFT는 전류 제어 소자인 전기 광학 장치.
- 제 1 항에 있어서, 상기 절연막은 산화 실리콘 막, 질화 실리콘 막 또는 옥시질화 실리콘 막을 갖는 적층부에 증착되는 전기 광학 장치.
- 제 2 항에 있어서, 상기 절연막은 산화 실리콘 막, 질화 실리콘 막 또는 옥시질화 실리콘 막을 갖는 적층부에 증착되는 전기 광학 장치.
- 제 3 항에 있어서, 상기 절연막은 산화 실리콘 막, 질화 실리콘 막 또는 옥시질화 실리콘 막을 갖는 적층부에 증착되는 전기 광학 장치.
- 제 4 항에 있어서, 상기 절연막은 산화 실리콘 막, 질화 실리콘 막 또는 옥시질화 실리콘 막을 갖는 적층부에 증착되는 전기 광학 장치.
- 제 5 항에 있어서, 상기 절연막은 산화 실리콘 막, 질화 실리콘 막 또는 옥시질화 실리콘 막을 갖는 적층부에 증착되는 전기 광학 장치.
- 제 6 항에 있어서, 상기 절연막은 산화 실리콘 막, 질화 실리콘 막 또는 옥시질화 실리콘 막을 갖는 적층부에 증착되는 전기 광학 장치.
- 제 7 항에 있어서, 상기 절연막은 산화 실리콘 막, 질화 실리콘 막 또는 옥시질화 실리콘 막을 갖는 적층부에 증착되는 전기 광학 장치.
- 제 8 항에 있어서, 상기 절연막은 산화 실리콘 막, 질화 실리콘 막 또는 옥시질화 실리콘 막을 갖는 적층부에 증착되는 전기 광학 장치.
- 제 9 항에 있어서, 상기 절연막은 산화 실리콘 막, 질화 실리콘 막 또는 옥시질화 실리콘 막을 갖는 적층부에 증착되는 전기 광학 장치.
- 제 1 항에 있어서, 상기 EL 소자는 수지 막 위에 형성되고, 절연막은 상기 수지 막과 EL 소자 사이에 배치되는 전기 광학 장치.
- 제 2 항에 있어서, 상기 EL 소자는 수지 막 위에 형성되고, 절연막은 상기 수지 막과 EL 소자 사이에 배치되는 전기 광학 장치.
- 제 3 항에 있어서, 상기 EL 소자는 수지 막 위에 형성되고, 절연막은 상기 수지 막과 EL 소자 사이에 배치되는 전기 광학 장치.
- 제 4 항에 있어서, 상기 EL 소자는 수지 막 위에 형성되고, 절연막은 상기 수지 막과 EL 소자 사이에 배치되는 전기 광학 장치.
- 제 5 항에 있어서, 상기 EL 소자는 수지 막 위에 형성되고, 절연막은 상기 수지 막과 EL 소자 사이에 배치되는 전기 광학 장치.
- 제 6 항에 있어서, 상기 EL 소자는 수지 막 위에 형성되고, 절연막은 상기 수지 막과 EL 소자 사이에 배치되는 전기 광학 장치.
- 제 7 항에 있어서, 상기 EL 소자는 수지 막 위에 형성되고, 절연막은 상기 수지 막과 EL 소자 사이에 배치되는 전기 광학 장치.
- 제 8 항에 있어서, 상기 EL 소자는 수지 막 위에 형성되고, 절연막은 상기 수지 막과 EL 소자 사이에 배치되는 전기 광학 장치.
- 제 9 항에 있어서, 상기 EL 소자는 수지 막 위에 형성되고, 절연막은 상기 수지 막과 EL 소자 사이에 배치되는 전기 광학 장치.
- 제 1 항에 기재된 전기 광학 장치를 포함하는 전자 장치.
- 제 11 항에 있어서, 상기 제 1 TFT와 제 2 TFT는 절연막상에 배치되고, 상기 절연막은 B(붕소), C(카본), 및 N(질소)로 이루어진 그룹으로부터 선택되는 적어도 하나의 소자와, Al(알루미늄), Si(실리콘) 및 P(인)로 이루어진 그룹으로부터 선택되는 적어도 하나의 소자를 포함하는 절연막이거나, Si, Al, N, O 및 M을 포함하는 절연막이고, 상기 M은 희소 접지 소자 특히, Ce(세륨), Yb(이터븀), Sm(사마륨), Er(에르븀), Y(이트륨), La(란타늄), Gd(가도리늄), Dy(디스프로슘) 및 Nd(네오디뮴)로 이루어진 그룹으로부터 선택되는 소자인 전기 광학 장치.
- 기판 위에 복수의 TFT를 형성하는 단계와,상기 복수의 TFT를 덮는 절연막을 형성하는 단계와,상기 절연막 위에 패시베이션 막을 형성하는 단계와,상기 패시베이션 막 위에 EL 소자를 형성하는 단계를 포함하는 전기 광학 장치 제조방법.
- 제 49 항에 있어서, 상기 절연막은 수지 막을 포함하는 전기 광학 장치 제조방법.
- 제 49 항에 있어서, 상기 패시베이션 막은 B(붕소), C(카본), 및 N(질소)로 이루어진 그룹으로부터 선택되는 적어도 하나의 소자와, Al(알루미늄), Si(실리콘) 및 P(인)로 이루어진 그룹으로부터 선택되는 적어도 하나의 소자를 포함하는 절연막 또는 Si, Al, N, O 및 M을 포함하는 절연막을 포함하고, 상기 M은 희소 접지 소자 특히, Ce(세륨), Yb(이터븀), Sm(사마륨), Er(에르븀), Y(이트륨), La(란타늄), Gd(가도리늄), Dy(디스프로슘) 및 Nd(네오디뮴)로 이루어진 그룹으로부터 선택되는 소자인 전기 광학 장치 제조방법.
- 기판 위에 복수의 TFT를 형성하는 단계와,상기 복수의 TFT를 덮는 절연막을 형성하는 단계와,상기 절연막 위에 제 1 패시베이션 막을 형성하는 단계와,상기 제 1 패시베이션 막 위에 EL 소자를 형성하는 단계와,상기 EL 소자를 덮는 제 2 패시베이션 막을 형성하는 단계를 포함하고,상기 EL 소자는 상기 제 1 패시베이션 막과 제 2 패시베이션 막으로 둘러싸이는 전기 광학 장치 제조방법.
- 제 52 항에 있어서, 상기 절연막은 수지 막을 포함하는 전기 광학 장치 제조방법.
- 제 52 항에 있어서, 상기 제 1 패시베이션 막과 제 2 패시베이션 막은 B(붕소), C(카본), 및 N(질소)로 이루어진 그룹으로부터 선택되는 적어도 하나의 소자와, Al(알루미늄), Si(실리콘) 및 P(인)로 이루어진 그룹으로부터 선택되는 적어도 하나의 소자를 포함하는 전기 광학 장치 제조방법.
- 제 52 항에 있어서, 상기 제 1 패시베이션 막과 제 2 패시베이션 막은 Si, Al, N, O 및 M을 포함하고, 상기 M은 희소 접지 소자 특히, Ce(세륨), Yb(이터븀), Sm(사마륨), Er(에르븀), Y(이트륨), La(란타늄), Gd(가도리늄), Dy(디스프로슘) 및 Nd(네오디뮴)로 이루어진 그룹으로부터 선택되는 소자인 전기 광학 장치 제조방법.
- 제 49 항에 있어서, B(붕소), C(카본), 및 N(질소)로 이루어진 그룹으로부터 선택되는 적어도 하나의 소자와, Al(알루미늄), Si(실리콘) 및 P(인)로 이루어진 그룹으로부터 선택되는 적어도 하나의 소자를 포함하는 절연막을 상기 기판과 복수의 TFT 사이에 형성하는 단계를 부가로 포함하는 전기 광학 장치 제조방법.
- 제 52 항에 있어서, B(붕소), C(카본), 및 N(질소)로 이루어진 그룹으로부터 선택되는 적어도 하나의 소자와, Al(알루미늄), Si(실리콘) 및 P(인)로 이루어진 그룹으로부터 선택되는 적어도 하나의 소자를 포함하는 절연막을 상기 기판과 복수의 TFT 사이에 형성하는 단계를 부가로 포함하는 전기 광학 장치 제조방법.
- 제 49 항에 있어서, Si, Al, N, O 및 M을 포함하는 절연막을 상기 기판과 복수의 TFT 사이에 형성하는 단계를 부가로 포함하고, 상기 M은 희소 접지 소자 특히, Ce(세륨), Yb(이터븀), Sm(사마륨), Er(에르븀), Y(이트륨), La(란타늄), Gd(가도리늄), Dy(디스프로슘) 및 Nd(네오디뮴)로 이루어진 그룹으로부터 선택되는 소자인 전기 광학 장치 제조방법.
- 제 52 항에 있어서, Si, Al, N, O 및 M을 포함하는 절연막을 상기 기판과 복수의 TFT 사이에 형성하는 단계를 부가로 포함하고, 상기 M은 희소 접지 소자 특히, Ce(세륨), Yb(이터븀), Sm(사마륨), Er(에르븀), Y(이트륨), La(란타늄), Gd(가도리늄), Dy(디스프로슘) 및 Nd(네오디뮴)로 이루어진 그룹으로부터 선택되는 소자인 전기 광학 장치 제조방법.
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KR100815828B1 (ko) * | 2000-06-13 | 2008-03-24 | 소니 가부시끼 가이샤 | 디스플레이 장치 |
KR100789452B1 (ko) * | 2001-12-28 | 2007-12-31 | 엘지.필립스 엘시디 주식회사 | 투명전극이 보호된 유기전계발광소자 |
KR100592280B1 (ko) * | 2004-06-17 | 2006-06-21 | 삼성에스디아이 주식회사 | 평판 표시장치의 제조방법, 및 평판 표시장치 |
KR20140146677A (ko) * | 2013-06-13 | 2014-12-29 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 이의 제조 방법 |
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Publication number | Publication date |
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CN101017796B (zh) | 2013-01-02 |
CN1278660A (zh) | 2001-01-03 |
US20130221362A1 (en) | 2013-08-29 |
US20040061438A1 (en) | 2004-04-01 |
KR100747417B1 (ko) | 2007-08-10 |
EP2296443A2 (en) | 2011-03-16 |
CN1604697A (zh) | 2005-04-06 |
US6689492B1 (en) | 2004-02-10 |
EP1058484B1 (en) | 2015-12-23 |
US8203265B2 (en) | 2012-06-19 |
EP1058484A1 (en) | 2000-12-06 |
TWI232595B (en) | 2005-05-11 |
US7825588B2 (en) | 2010-11-02 |
CN100479181C (zh) | 2009-04-15 |
US20150194631A1 (en) | 2015-07-09 |
CN101017796A (zh) | 2007-08-15 |
US20140203286A1 (en) | 2014-07-24 |
CN1400673A (zh) | 2003-03-05 |
CN1400673B (zh) | 2014-06-25 |
US8987988B2 (en) | 2015-03-24 |
US8421350B2 (en) | 2013-04-16 |
US9178177B2 (en) | 2015-11-03 |
EP2296443A3 (en) | 2012-03-07 |
CN1263163C (zh) | 2006-07-05 |
US7147530B2 (en) | 2006-12-12 |
US8674600B2 (en) | 2014-03-18 |
US20070063646A1 (en) | 2007-03-22 |
US20120248453A1 (en) | 2012-10-04 |
US20110042679A1 (en) | 2011-02-24 |
CN1881609A (zh) | 2006-12-20 |
TW527735B (en) | 2003-04-11 |
CN100420040C (zh) | 2008-09-17 |
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