KR19990004605A - Device isolation film formation method of semiconductor device - Google Patents
Device isolation film formation method of semiconductor device Download PDFInfo
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- KR19990004605A KR19990004605A KR1019970028732A KR19970028732A KR19990004605A KR 19990004605 A KR19990004605 A KR 19990004605A KR 1019970028732 A KR1019970028732 A KR 1019970028732A KR 19970028732 A KR19970028732 A KR 19970028732A KR 19990004605 A KR19990004605 A KR 19990004605A
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Abstract
본 발명은 반도체 소자의 소자분리막 형성방법에 관한 것으로서 반도체기판과 동일한 단차를 갖도록 소자분리 산화막을 형성하여 후속 노광공정을 용이하게 하고 버즈 빅을 감소시켜 활성영역을 많이 확보함으로써 반도체소자의 수율 및 신뢰성을 향상시키고 그에 따른 반도체소자의 고집적화를 가능하게 하는 기술이다.The present invention relates to a method of forming a device isolation film of a semiconductor device, by forming a device isolation oxide film to have the same level as a semiconductor substrate, thereby facilitating subsequent exposure processes, and reducing the buzz big to secure a large number of active areas, thereby increasing the yield and reliability of the semiconductor device. It is a technique that improves the performance and thereby high integration of the semiconductor device.
Description
본 발명은 반도체소자의 소자분리막 형성방법에 관한 것으로써 특히 소자분리 산화막과 반도체기판의 단차를 동일하게 형성하여 후속공정을 용이하게 하고 버즈 빅(bird's beak)의 면적을 감소시킴으로써 반도체소자의 고집적화를 가능하게 하는 반도체소자의 소자분리막 형성방법을 제공함에 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of forming a device isolation film of a semiconductor device. In particular, the step of forming a device isolation oxide film and a semiconductor substrate in the same manner facilitates the subsequent process and reduces the area of the bird's beak by increasing the integration of the semiconductor device. The present invention provides a method for forming a device isolation film of a semiconductor device.
일반적으로 반도체소자는 트랜지스터나 커패시터 등과 같은 소자들이 형성되는 활성영역과 상기 소자들의 동작이 서로 방해되지 않도록 활성영역들을 분리하는 소자분리 영역으로 구성되어 있다.In general, a semiconductor device is composed of an active region in which devices such as a transistor or a capacitor are formed and an isolation region separating the active regions so that the operation of the devices does not interfere with each other.
최근 반도체소자의 고집적화 추세에 따라 반도체소자에서 많은 면적을 차지하는 소자분리 영역의 면적을 감소시키려는 노력이 꾸준히 진행되고 있다.Recently, with the trend toward higher integration of semiconductor devices, efforts have been made to reduce the area of device isolation regions, which occupy a large area in semiconductor devices.
이러한 소자분리 영역의 제조방법으로는 질화막 패턴을 마스크로 하여 반도체기판을 열산화시키는 통상의 로코스(local oxidation of silicon : 이하 LOCOS 라 함.)방법이나 반도체기판에 트렌치를 형성하고 이를 절연물질로 매립하는 트렌치분리 등의 방법이 사용되고 있으며, 그 중 LOCOS 방법은 비교적 공정이 간단하여 널리 사용되지만 소자분리 면적이 크고, 경계면에 버즈빅(bird's beak)이 생성되어 기판 스트레스(stress)에 의한 격자 결함이 발생되는 단점이 있다.As a method of fabricating such an isolation region, a conventional local oxidation of silicon (hereinafter referred to as LOCOS) method of thermally oxidizing a semiconductor substrate using a nitride film pattern as a mask, or a trench is formed in the semiconductor substrate and the insulating material is used as an insulating material. Trench separation methods are used, and among them, the LOCOS method is widely used because of its relatively simple process. This has the disadvantage of being generated.
상기 LOCOS 필드산화막의 제조방법을 살펴보면 다음과 같다.Looking at the manufacturing method of the LOCOS field oxide film as follows.
먼저, 반도체기판의 표면을 열산화시겨 패드산화막을 형성하고 상기 패드산화막 상부에 질화막을 형성한 다음, 상기 반도체기판의 소자분리 영역으로 예정된 부분을 노출시키는 질화막 패턴을 형성한 후, 상기 질화막 패턴을 열산화 마스크로 하여 반도체기판을 소정 두께 열산화시켜 필드산화막을 형성한다.First, the surface of the semiconductor substrate is thermally oxidized to form a pad oxide film, a nitride film is formed on the pad oxide film, and a nitride film pattern is formed to expose a predetermined portion to the device isolation region of the semiconductor substrate. Is a thermal oxidation mask, and the semiconductor substrate is thermally oxidized to a predetermined thickness to form a field oxide film.
이러한 종래의 LOCOS 필드산화막은 활성영역과 필드산화막 사이의 반도체 기판 경계부분에 산소가 측면 침투하여 버즈빅이라는 경사면이 형성된다.In the conventional LOCOS field oxide film, an oxygen sidewall penetrates into the boundary portion of the semiconductor substrate between the active region and the field oxide film to form an inclined surface called a buzz beak.
상기 버즈빅에 의해 반도체기판에 스트레스가 인가되어 격자결함이 발생되므로 누설전류가 증가되어 소자동작의 신뢰성이 떨어지고, 활성영역의 면적이 감소되어 소자의 고집적화가 어려워지는 문제점이 있다.Since the stress is applied to the semiconductor substrate by the Burjvik, the lattice defects are increased, the leakage current is increased, the reliability of the device operation is reduced, the area of the active area is reduced, it is difficult to high integration of the device.
상기와 같은 종래기술에 따른 반도체소자의 소자분리막 형성방법은 소자분리 산화막의 단차가 반도체기판 상부로 돌출되어 후속 노광공정시 심각한 영향을 미치고 소자의 고집적화로 인한 활성영역의 축소때문에 버즈 빅이 상대적으로 크게되어 원하는 활성영역을 확보하는 데에 문제점이 있다.In the method of forming a device isolation film of a semiconductor device according to the prior art as described above, the step of the device isolation oxide film protrudes above the semiconductor substrate, which seriously affects the subsequent exposure process, and the buzz big is relatively small due to the reduction of the active area due to the high integration of the device. There is a problem in securing the desired active area to become large.
본 발명은 상기한 문제점을 해결하기 위하여 반도체기판과 소자분리 산화막의 단차를 동일하게 형성시킴으로써 후속공정을 용이하게 하고, 활성영역을 크게 확보하여 반체소자의 고집적화를 가능하게 하는 반도체소자의 소자분리막 형성방법을 제공하는 데 그 목적이 있다.In order to solve the above problems, the semiconductor substrate and the device isolation oxide film are formed to have the same step, thereby facilitating subsequent steps, and securing a large active area, thereby forming a device isolation film of the semiconductor device which enables high integration of half-element devices. The purpose is to provide a method.
도 1내지 도4는 본 발명에 따른 반도체소자의 소자분리막 형성방법을 도시한 단면도.1 to 4 are cross-sectional views illustrating a method of forming an isolation layer in a semiconductor device according to the present invention.
도면의 주요부분에 대한 부호의 설명Explanation of symbols for main parts of the drawings
11 : 반도체기판 13 : 산화막11 semiconductor substrate 13 oxide film
15 : 희생산화막 17 : 패드산화막15: sacrificial oxide film 17: pad oxide film
19 : 질화막 21 : 소자분리 산화막19 nitride film 21 device isolation oxide film
상기 목적을 달성하기 위해 본 발명에 따른 반도체소자의 소자분리막 형성방법은, 반도체기판의 소자분리영역을 노출시키는 절연막 패턴을 형성하는 공정과, 상기 소자분리영역을 열산화시켜 희생산화막을 형성하는 공정과, 상기 절연막 패턴과 희생산화막을 제거하는 공정과, 상기 구조 전표면에 패드절연막을 증착하는 공정과, 상기 반도체기판의 활성영역에 질화막을 형성하는 공정과, 반도체기판을 습식산화시켜 소자분리막을 형성하는 공정을 포함하는 것을 특징으로 한다.In order to achieve the above object, a method of forming an isolation layer of a semiconductor device according to the present invention includes forming an insulating layer pattern exposing an isolation region of a semiconductor substrate and forming a sacrificial oxide film by thermally oxidizing the isolation region. Removing the insulating film pattern and the sacrificial oxide film; depositing a pad insulating film on the entire surface of the structure; forming a nitride film in an active region of the semiconductor substrate; and wet-oxidizing the semiconductor substrate to form a device isolation film. It is characterized by including the process of forming.
이하, 첨부된 도면을 참고로 하여 본 발명을 상세히 설명한다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
도 1내지 도 4는 본 발명에 의한 반도체소자의 소자분리막 형성방법을 도시한 단면도이다.1 to 4 are cross-sectional views illustrating a method of forming an isolation layer in a semiconductor device according to the present invention.
먼저, 실리콘으로 형성된 반도체기판(11) 상부에 산화막(13)을 형성한다.First, an oxide film 13 is formed on the semiconductor substrate 11 formed of silicon.
이때, 상기 산화막(13)은 화학기상증착(chemical vapor deposition, 이하 CVD라 함) 방법으로 형성한다.At this time, the oxide film 13 is formed by chemical vapor deposition (hereinafter referred to as CVD).
그리고, 상기 산화막(13) 상부에 질화막(도시안됨)을 형성시켜 후속공정을 실시한다.Subsequently, a nitride film (not shown) is formed on the oxide film 13 to perform a subsequent process.
여기서, 상기 질화막을 형성하기 전에 상기 산화막(13)이 손상되는 것을 방지하기 위하여 다결정실리콘을 상기 산화막(13) 상부에 형성시키는 피.비.엘.(poly-buffered-Local Oxidation of Silicon, 이하 PBL이라 함)을 적용한다.Herein, in order to prevent the oxide film 13 from being damaged before the nitride film is formed, P. B. (poly-buffered-Local Oxidation of Silicon, hereinafter PBL) is formed to form polycrystalline silicon on the oxide film 13. Apply).
다음, 상기 산화막(13) 상부에 양성감광막(도시안됨)을 도포한 후 액티브 마스크(도시안됨)를 이용하여 패터닝한다.Next, a positive photosensitive film (not shown) is coated on the oxide layer 13 and then patterned using an active mask (not shown).
그 다음, 상기 액티브마스크를 식각마스크로 사용하여 상기 산화막(13)을 건식식각한다.Next, the oxide layer 13 is dry etched using the active mask as an etch mask.
그리고 상기 감광막을 제거한다. (도 1)And the photosensitive film is removed. (Figure 1)
이어서, 습식산화공정을 실시하여 희생산화막(15)을 성장시킨다.Subsequently, a wet oxidation process is performed to grow the sacrificial oxide film 15.
이때 상기 습식산화공정은 산소분위기에서 실시한다.At this time, the wet oxidation process is carried out in an oxygen atmosphere.
그리고, 상기 습식산화공정시 반도체기판(11)이 노출된 부분은 습식산화 타켓만큼 산화막이 성장되고, 상기 산화막(13)이 있는 부분은 산소가 확산하여 상기 반도체기판(11)과 반응하여 적은 양의 산화막이 성장하게 된다. (도 2)In the wet oxidation process, the exposed portion of the semiconductor substrate 11 is grown as much as the wet oxidation target, and the portion of the oxide layer 13 is diffused by oxygen to react with the semiconductor substrate 11 in a small amount. Oxide film grows. (Figure 2)
다음, 상기 산화막(13)과 희생산화막(15)을 습식식각하여 제거한 다음 상기 구조의 전표면에 패드산화막(17)을 증착한다.Next, the oxide film 13 and the sacrificial oxide film 15 are removed by wet etching, and then the pad oxide film 17 is deposited on the entire surface of the structure.
그 다음, 상기 패드산화막(17)의 상부에 질화막(19)을 증착한다.Next, a nitride film 19 is deposited on the pad oxide film 17.
그 후 상기 질화막(19) 상부에 양성감광막(도시안됨)을 도포하고, 액티브 마스크를 이용하여 패터닝한다.Thereafter, a positive photoresist film (not shown) is coated on the nitride film 19 and patterned using an active mask.
그리고 상기 질화막(19)을 건식식각하여 제거한다.(도 3)Then, the nitride film 19 is removed by dry etching (FIG. 3).
이어서 소자분리영역으로 정의된 부분을 습식산화를 실시하여 소자분리산화막(21)을 성장시킨다. (도 4)Subsequently, the device isolation oxide film 21 is grown by wet oxidation of a portion defined as the device isolation region. (Figure 4)
상기한 바와 같이 본 발명에 따른 반도체소자의 소자분리막 형성방법은 반도체기판과 동일한 단차를 갖도록 소자분리 산화막을 형성하여 후속 노광공정을 용이하게 하고, 버즈 빅을 감소시켜 활성영역을 많이 확보함으로써 반도체소자의 수율 및 신뢰성을 향상시키고 그에 따른 반도체소자의 고집적화를 가능하게 하는 이점이 있다.As described above, in the method of forming a device isolation film of a semiconductor device according to the present invention, a device isolation oxide film is formed to have the same level as a semiconductor substrate, thereby facilitating subsequent exposure processes, and reducing the buzz big to secure a large amount of active area. It has the advantage of improving the yield and reliability of the semiconductor device and thereby high integration.
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