KR102515299B1 - 육방정 단결정 잉곳 및 웨이퍼의 가공 방법 - Google Patents

육방정 단결정 잉곳 및 웨이퍼의 가공 방법 Download PDF

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Publication number
KR102515299B1
KR102515299B1 KR1020180117049A KR20180117049A KR102515299B1 KR 102515299 B1 KR102515299 B1 KR 102515299B1 KR 1020180117049 A KR1020180117049 A KR 1020180117049A KR 20180117049 A KR20180117049 A KR 20180117049A KR 102515299 B1 KR102515299 B1 KR 102515299B1
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KR
South Korea
Prior art keywords
wafer
ingot
mark
separation
stripe
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KR1020180117049A
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English (en)
Korean (ko)
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KR20190039007A (ko
Inventor
겐타로 이이즈카
Original Assignee
가부시기가이샤 디스코
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Publication of KR20190039007A publication Critical patent/KR20190039007A/ko
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/04—After-treatment of single crystals or homogeneous polycrystalline material with defined structure using electric or magnetic fields or particle radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02021—Edge treatment, chamfering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54433—Marks applied to semiconductor devices or parts containing identification or tracking information
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54473—Marks applied to semiconductor devices or parts for use after dicing

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Laser Beam Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
KR1020180117049A 2017-10-02 2018-10-01 육방정 단결정 잉곳 및 웨이퍼의 가공 방법 KR102515299B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2017-192599 2017-10-02
JP2017192599A JP7096657B2 (ja) 2017-10-02 2017-10-02 ウェーハの加工方法

Publications (2)

Publication Number Publication Date
KR20190039007A KR20190039007A (ko) 2019-04-10
KR102515299B1 true KR102515299B1 (ko) 2023-03-28

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KR1020180117049A KR102515299B1 (ko) 2017-10-02 2018-10-01 육방정 단결정 잉곳 및 웨이퍼의 가공 방법

Country Status (4)

Country Link
JP (1) JP7096657B2 (zh)
KR (1) KR102515299B1 (zh)
CN (1) CN109594125A (zh)
TW (1) TWI815819B (zh)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111300192B (zh) * 2020-03-24 2021-12-24 广州南砂晶圆半导体技术有限公司 一种应用于单晶的定向加工方法
CN112144103B (zh) * 2020-09-27 2022-08-16 宜昌南玻硅材料有限公司 铸造单晶籽晶制备方法
CN114428444B (zh) * 2020-10-29 2024-01-26 中芯国际集成电路制造(上海)有限公司 套刻量测***矫正方法
CN113172777B (zh) * 2021-04-23 2022-10-04 深圳大学 一种探测器级高纯锗单晶籽晶及其制备方法和应用
CN114161596B (zh) * 2021-12-23 2024-04-09 西安奕斯伟材料科技股份有限公司 一种用于生产硅片的***、方法及单晶硅棒

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016127186A (ja) * 2015-01-06 2016-07-11 株式会社ディスコ ウエーハの生成方法

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JPH01192121A (ja) * 1988-01-27 1989-08-02 Hitachi Cable Ltd 半導体ウエハ
TW230262B (zh) * 1992-12-24 1994-09-11 American Telephone & Telegraph
JPH10256105A (ja) * 1997-03-11 1998-09-25 Super Silicon Kenkyusho:Kk レーザマークを付けたウェーハ
DE19730224A1 (de) * 1997-07-15 1999-01-21 Bayer Ag Verfahren zur Reinigung Phosphoroxychlorid
US7007855B1 (en) 2000-03-17 2006-03-07 International Business Machines Corporation Wafer identification mark
JP4071476B2 (ja) * 2001-03-21 2008-04-02 株式会社東芝 半導体ウェーハ及び半導体ウェーハの製造方法
US6797585B1 (en) * 2003-10-07 2004-09-28 Lsi Logic Corporation Nonintrusive wafer marking
JP2008294365A (ja) 2007-05-28 2008-12-04 Sanyo Electric Co Ltd 太陽電池の製造方法
US9640486B2 (en) 2007-06-13 2017-05-02 Conergy Ag Ingot marking for solar cell determination
US20090057837A1 (en) * 2007-09-04 2009-03-05 Leslie Marshall Wafer with edge notches encoding wafer identification descriptor
JP2009090387A (ja) 2007-10-04 2009-04-30 Denso Corp 炭化珪素基板製造用ワイヤーソー装置
CN103489963B (zh) * 2013-10-10 2016-03-16 大族激光科技产业集团股份有限公司 太阳能电池硅片的跟踪方法
JP6425606B2 (ja) * 2015-04-06 2018-11-21 株式会社ディスコ ウエーハの生成方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016127186A (ja) * 2015-01-06 2016-07-11 株式会社ディスコ ウエーハの生成方法

Also Published As

Publication number Publication date
TW201923870A (zh) 2019-06-16
CN109594125A (zh) 2019-04-09
JP7096657B2 (ja) 2022-07-06
JP2019067944A (ja) 2019-04-25
KR20190039007A (ko) 2019-04-10
TWI815819B (zh) 2023-09-21

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