KR102060422B1 - 단결정 실리콘의 제조 방법 - Google Patents
단결정 실리콘의 제조 방법 Download PDFInfo
- Publication number
- KR102060422B1 KR102060422B1 KR1020187012042A KR20187012042A KR102060422B1 KR 102060422 B1 KR102060422 B1 KR 102060422B1 KR 1020187012042 A KR1020187012042 A KR 1020187012042A KR 20187012042 A KR20187012042 A KR 20187012042A KR 102060422 B1 KR102060422 B1 KR 102060422B1
- Authority
- KR
- South Korea
- Prior art keywords
- silicon
- single crystal
- crucible
- pulling
- silicon melt
- Prior art date
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
- C30B15/305—Stirring of the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015215623 | 2015-11-02 | ||
JPJP-P-2015-215623 | 2015-11-02 | ||
PCT/JP2016/004768 WO2017077701A1 (ja) | 2015-11-02 | 2016-10-31 | 単結晶シリコンの製造方法および単結晶シリコン |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20180061307A KR20180061307A (ko) | 2018-06-07 |
KR102060422B1 true KR102060422B1 (ko) | 2019-12-30 |
Family
ID=58661825
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020187012042A KR102060422B1 (ko) | 2015-11-02 | 2016-10-31 | 단결정 실리콘의 제조 방법 |
Country Status (6)
Country | Link |
---|---|
JP (1) | JP6489209B2 (zh) |
KR (1) | KR102060422B1 (zh) |
CN (1) | CN108291327B (zh) |
DE (1) | DE112016005020B4 (zh) |
TW (1) | TWI625432B (zh) |
WO (1) | WO2017077701A1 (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6930458B2 (ja) * | 2018-02-28 | 2021-09-01 | 株式会社Sumco | シリコン融液の対流パターン推定方法、シリコン単結晶の酸素濃度推定方法、シリコン単結晶の製造方法、および、シリコン単結晶の引き上げ装置 |
JP7052694B2 (ja) * | 2018-11-28 | 2022-04-12 | 株式会社Sumco | シリコン単結晶の製造方法 |
JP7006788B2 (ja) * | 2019-02-27 | 2022-01-24 | 株式会社Sumco | シリコン融液の対流パターン制御方法、および、シリコン単結晶の製造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001247394A (ja) | 2000-03-06 | 2001-09-11 | Nec Corp | 半導体単結晶育成装置および半導体単結晶育成方法 |
JP2009018984A (ja) * | 2007-06-15 | 2009-01-29 | Covalent Materials Corp | 低酸素濃度シリコン単結晶およびその製造方法 |
KR100881172B1 (ko) | 2004-09-02 | 2009-02-02 | 가부시키가이샤 사무코 | 자장 인가식 실리콘 단결정의 인상 방법 |
JP2009161363A (ja) * | 2007-12-28 | 2009-07-23 | Japan Siper Quarts Corp | シリコン単結晶引上げ用石英ガラスルツボ |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5850953B2 (ja) | 1980-01-28 | 1983-11-14 | ソニー株式会社 | 結晶成長法 |
JPS6058657B2 (ja) | 1981-09-24 | 1985-12-20 | 株式会社ナシヨナル技研 | 人工歯牙 |
JPH0431386A (ja) | 1990-05-25 | 1992-02-03 | Shin Etsu Handotai Co Ltd | 半導体単結晶引上方法 |
US5178720A (en) * | 1991-08-14 | 1993-01-12 | Memc Electronic Materials, Inc. | Method for controlling oxygen content of silicon crystals using a combination of cusp magnetic field and crystal and crucible rotation rates |
JP2940437B2 (ja) | 1995-06-01 | 1999-08-25 | 信越半導体株式会社 | 単結晶の製造方法及び装置 |
JP3589077B2 (ja) | 1999-03-17 | 2004-11-17 | 信越半導体株式会社 | シリコン単結晶の製造方法ならびにこの方法で製造された単結晶およびシリコンウエーハ |
US7223304B2 (en) * | 2004-12-30 | 2007-05-29 | Memc Electronic Materials, Inc. | Controlling melt-solid interface shape of a growing silicon crystal using a variable magnetic field |
JP4725752B2 (ja) * | 2008-05-09 | 2011-07-13 | 信越半導体株式会社 | 単結晶の製造方法 |
DE102008062049A1 (de) | 2008-05-19 | 2009-12-03 | Covalent Materials Corp. | Silicium-Einkristalle mit niedriger Sauerstoffkonzentration sowie deren Herstellung |
-
2016
- 2016-10-31 JP JP2017516966A patent/JP6489209B2/ja active Active
- 2016-10-31 DE DE112016005020.8T patent/DE112016005020B4/de active Active
- 2016-10-31 WO PCT/JP2016/004768 patent/WO2017077701A1/ja active Application Filing
- 2016-10-31 KR KR1020187012042A patent/KR102060422B1/ko active IP Right Grant
- 2016-10-31 CN CN201680061735.2A patent/CN108291327B/zh active Active
- 2016-11-01 TW TW105135335A patent/TWI625432B/zh active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001247394A (ja) | 2000-03-06 | 2001-09-11 | Nec Corp | 半導体単結晶育成装置および半導体単結晶育成方法 |
KR100881172B1 (ko) | 2004-09-02 | 2009-02-02 | 가부시키가이샤 사무코 | 자장 인가식 실리콘 단결정의 인상 방법 |
JP2009018984A (ja) * | 2007-06-15 | 2009-01-29 | Covalent Materials Corp | 低酸素濃度シリコン単結晶およびその製造方法 |
JP2009161363A (ja) * | 2007-12-28 | 2009-07-23 | Japan Siper Quarts Corp | シリコン単結晶引上げ用石英ガラスルツボ |
Also Published As
Publication number | Publication date |
---|---|
WO2017077701A1 (ja) | 2017-05-11 |
TWI625432B (zh) | 2018-06-01 |
CN108291327A (zh) | 2018-07-17 |
CN108291327B (zh) | 2021-01-08 |
KR20180061307A (ko) | 2018-06-07 |
JPWO2017077701A1 (ja) | 2017-11-09 |
DE112016005020T5 (de) | 2018-07-19 |
JP6489209B2 (ja) | 2019-03-27 |
TW201716646A (zh) | 2017-05-16 |
DE112016005020B4 (de) | 2022-12-15 |
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