KR101252676B1 - Semiconductor Light Emitting Device - Google Patents

Semiconductor Light Emitting Device Download PDF

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Publication number
KR101252676B1
KR101252676B1 KR1020060076098A KR20060076098A KR101252676B1 KR 101252676 B1 KR101252676 B1 KR 101252676B1 KR 1020060076098 A KR1020060076098 A KR 1020060076098A KR 20060076098 A KR20060076098 A KR 20060076098A KR 101252676 B1 KR101252676 B1 KR 101252676B1
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KR
South Korea
Prior art keywords
light emitting
semiconductor light
hole
emitting device
inner circumferential
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Application number
KR1020060076098A
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Korean (ko)
Other versions
KR20070026011A (en
Inventor
세이시 와타나베
Original Assignee
스탠리 일렉트릭 컴퍼니, 리미티드
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Application filed by 스탠리 일렉트릭 컴퍼니, 리미티드 filed Critical 스탠리 일렉트릭 컴퍼니, 리미티드
Publication of KR20070026011A publication Critical patent/KR20070026011A/en
Application granted granted Critical
Publication of KR101252676B1 publication Critical patent/KR101252676B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

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  • Led Device Packages (AREA)

Abstract

2. Description of the Related Art [0002] A semiconductor light emitting device in which a semiconductor light emitting device is conventionally resin-sealed with a sealing resin on a metal inner bottom of a recess formed on a substrate by an adhesive such as a conductive adhesive. Due to the thermal stress of the sealing resin due to the temperature change due to the flashing, the interface peeling occurred between the bottom surface of the recess metal and the adhesive, resulting in problems such as deterioration of optical characteristics and electrical characteristics.

The present invention is to partially remove the metal pattern forming the inner circumferential surface of the recess to expose the insulator of the underlying to the sealing resin, and to form a strong interface between the insulator and the sealing resin. As a result, the interfacial peeling between the bottom surface of the recess metal and the adhesive due to the thermal stress of the sealing resin due to the temperature change caused by the flashing after mounting and the high temperature environment at the time of mounting the semiconductor light emitting device is suppressed and the optical characteristics are suppressed. A highly reliable semiconductor light emitting device that does not cause deterioration and poor electrical characteristics can be realized.

Semiconductor light emitting device, semiconductor light emitting device

Description

Semiconductor Light Emitting Device

1 is a perspective view showing an embodiment according to the semiconductor light emitting device of the present invention.

2 is a cross-sectional view taken along the line A-A of FIG.

3 is a perspective view showing another embodiment according to the semiconductor light emitting device of the present invention.

4 is a cross-sectional view taken along the line A-A of FIG.

5 is a partial cross-sectional view showing another embodiment according to the semiconductor light emitting device of the present invention.

6 is a cross-sectional view showing another embodiment of the semiconductor light emitting device of the present invention.

7 is a plan view showing a conventional semiconductor light emitting device.

8 is a cross-sectional view taken along the line A-A of FIG.

** Description of Major Reference Codes **

1,1a, 1b: Insulation substrate 2: Adhesive sheet

3: base substrate 4a, 4b: through hole

5: inner bottom 6a, 6b: inner circumference

7: opening 8: recess

9a, 9b, 9c: Metal pattern 10: Inner circumference

11: inner side 12: inner side

13: conductive adhesive 14: semiconductor light emitting element

15: bonding wire 16: translucent resin

17: adhesive 18a, 18b: metal plate

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting device, and more particularly, to a semiconductor light emitting device in which a semiconductor light emitting element is mounted inside a recess provided in a substrate, and the semiconductor light emitting element is sealed.

As for the semiconductor light emitting device, there is a structure as shown in Figs. 7 and 8, for example. FIG. 7 is a plan view, and FIG. 8 is a sectional view taken along the line A-A of FIG. In the semiconductor light emitting device, a pair of circuit patterns 51a and 51b are formed at opposite ends of the surface of the insulator 50, and each of the circuit patterns 51a and 51b is returned from the edge portion to the rear surface side. It is formed in a state. In addition, a concave portion 52 is provided in a substantially central portion on the surface side of the insulator 50, and a circuit pattern is formed on the entire surface and all inner circumferential surfaces 54 of the inner bottom surface 53 of the concave portion 52. Is formed and connected to one circuit pattern 51a of the pair of circuit patterns 51a and 51b formed on the surface side of the insulator 50, and the other circuit pattern 51b faces toward the center of the insulator 50 substantially. It is extended.

The semiconductor light emitting device 56 is disposed on the inner bottom surface 53 of the recess 52 through the conductive adhesive 55, and the lower electrode of the semiconductor light emitting device 56 and the inner bottom surface of the recess 52 are disposed. The circuit pattern 51a formed at 53 is connected and electrical conduction is intended. The upper electrode of the semiconductor light emitting element 56 is connected to the circuit pattern 51b extending toward the center of the substrate via the bonding wire 57, so that electrical conduction is achieved.

In addition, the resin light-emitting device 56 and the bonding wires 57 are resin-sealed so as to be covered by the light-transmissive resin 58 to protect the semiconductor light-emitting device 56 from external environments such as moisture, dust, and gas, and further bonding. The wire 57 is protected from mechanical stress such as vibration and impact (for example, Japanese Patent Laid-Open No. 7-202271).

By the way, the surface mount semiconductor light emitting device is often used in combination with other surface mount circuit components, and the surface mount by solder flow is generally performed on the component mounting substrate of the electronic device. In this case, since the surface mounted semiconductor light emitting device is generally very small, the entire semiconductor light emitting device rises to a temperature almost equal to the heating temperature by the solder flow.

At this time, peeling occurs at both contact interfaces due to the stress caused by the difference in the thermal expansion coefficient of the translucent resin sealing the semiconductor light emitting element and the bonding wire and the circuit pattern formed on the inner bottom surface of the recess. Then, the force that lifts the conductive adhesive and the semiconductor light emitting element onto the circuit pattern by the peeled translucent resin acts, and the conductive adhesive may be peeled off from the circuit pattern, resulting in deterioration of optical characteristics and electrical characteristics.

In addition, even after the semiconductor light emitting device is mounted on the component mounting substrate, the translucent resin repeatedly expands and contracts due to the temperature change caused by the repeated flashing of the semiconductor light emitting device, and the resin stress at this time also has the same effect as above. It may cause deterioration and poor electrical characteristics.

Therefore, the present invention was devised in view of the above problems, and reduces the influence of thermal stress of the sealing resin in a high-temperature mounting environment and a use environment with a large temperature change, and provides a circuit pattern, the circuit pattern and the semiconductor light emitting element It is an object of the present invention to provide a highly reliable semiconductor light emitting device that does not cause optical property deterioration and electrical property defects by suppressing interfacial separation with a conductive adhesive to be connected.

SUMMARY OF THE INVENTION In order to solve the above problems, the invention described in claim 1 includes at least one semiconductor light emitting element, a semiconductor light emitting element mounting substrate which forms an inner bottom of a recess for mounting the semiconductor light emitting element, and an inner portion of the recess. An insulating substrate having a first through hole constituting the main portion, and a second through hole constituting the inner circumference of the concave portion, and a line connecting the centers of the first through hole and the second through hole to emit the semiconductor light. An inner circumferential portion of the concave portion formed between the semiconductor light emitting element mounting substrate and the insulating substrate so as to be perpendicular to the mounting substrate of the device, the adhesive sheet joining the two substrates, and the first through hole and the second through hole; A metal reflecting surface covering a portion of the metal pattern and a metal pattern formed at an inner bottom portion of the concave portion for electrical connection with the semiconductor light emitting device; And a sealing resin part for sealing the semiconductor light emitting element mounted in the recess, wherein the first through hole and the second through hole are connected from the second through hole toward the opening of the first through hole, respectively. It is formed as a surface inclined outward at the same angle with respect to and at the same time as a continuous surface, at least a portion of the inner peripheral surface of the second through hole is exposed to the sealing resin portion and at the same time exposed to the sealing resin portion A portion of the inner circumferential surface of the second through hole is provided in two positions symmetrically with respect to the semiconductor light emitting element.

The invention according to claim 2 of the present invention is characterized in that the largest portion of the inner peripheral surface of the second through hole is smaller than or equal to the smallest portion of the inner peripheral surface of the first through hole.

The invention according to claim 3 of the present invention is characterized in that the inner circumferential surface of the second through hole exposed to the sealing resin portion is formed symmetrically about the semiconductor light emitting element.

The invention according to claim 4 of the present invention is characterized in that the inner circumferential portion is inclined outward at the same angle with respect to the central axis of the first through hole and the second through hole.

The invention according to claim 5 of the present invention is the invention, wherein the inner circumferential portion is parallel to the central axis of the first through hole and the second through hole.

In addition, according to the sixth aspect of the present invention, the semiconductor light emitting device mounting substrate is a metal substrate, and an insulating layer is formed between the metal substrate and the metal pattern.

(Example)

Best Mode for Carrying Out the Invention Preferred embodiments of the present invention will be described in detail below with reference to Figs. On the other hand, since the embodiments described below are preferred embodiments of the present invention, various technically preferable limitations are added, but the scope of the present invention is not described in the following description unless it is specifically limited to the present invention, It is not limited to these embodiments.

1 is a perspective view illustrating an embodiment of a semiconductor light emitting device of the present invention, and FIG. 2 is a cross-sectional view taken along line A-A of FIG.

The base substrate 3 is formed by joining two insulating substrates 1a and 1b with the adhesive sheet 2 interposed therebetween. An approximately circular through hole 4a is formed in the center portion of the adhesive sheet 2, and an approximately circular through hole 4b is also formed in one insulating substrate 1a in contact with the adhesive sheet. The through holes 4a of the adhesive sheet 2 and the through holes 4b of the insulating substrate 1a are located on substantially the same straight line with their centers perpendicular to the insulating substrate 1a. That is, in the center portion of the base substrate 3, the insulating substrate 1b which is in contact with the adhesive sheet 2 and does not have a through hole is used as the inner bottom portion 5, and the through hole of the adhesive sheet 2 is formed. One of the through holes 4b of the insulating substrate 1a is opened by using the inner circumferential surfaces 6a and 6b of the 4a and the through holes 4b of the insulating substrate 1a as inner circumferential portions. The recessed part 8 set as (7) is formed.

In this case, each of the inner circumferential surfaces 6a and 6b of the through hole 4a of the adhesive sheet 2 and the through hole 4b of the insulating substrate 1a is insulated from the through hole 4a of the adhesive sheet 2. And a surface inclined outward at approximately the same angle with respect to the opening 7 of the through hole 4b of the substrate 1a with respect to the through hole 4a and the central axis X of the through hole 4b. , The two inner circumferential surfaces 6a and 6b form a continuous surface.

A pair of metal patterns 9a and 9b are formed in the opposite side edges on the surface side of the base substrate 3 having the above configuration, and each metal pattern 9a and 9b has an edge portion of the base substrate 3. It is formed in the state which returned to the back surface through the side surface from the side. In addition, the metal patterns 9a and 9b formed at both edge portions of the base substrate 3 extend inward to face each other, and one of the metal patterns 9a is formed on the base substrate 3. It extends to the inner bottom part 5 through the inner peripheral part 10 of the formed recessed part 8, and forms the inner peripheral surface 11 and the inner bottom face 12 of the recessed part 8. As shown in FIG. In addition, the other metal pattern 9b extends to the very front of the recess 8.

Then, the semiconductor light emitting element 14 is placed on the metal pattern 9a forming the inner bottom surface 12 of the recess 8 through the conductive adhesive 13, so that the lower electrode and the metal pattern of the semiconductor light emitting element 14 are placed. Electrical conduction of (9a) is intended. On the other hand, the upper electrode of the semiconductor light emitting element 14 is connected to the metal pattern 9b through the bonding wire 15, and electrical connection between the upper electrode of the semiconductor light emitting element 14 and the metal pattern 9b is intended. .

In addition, the semiconductor light emitting element 14 and the bonding wire 15 are sealed so as to be covered by the translucent resin 16. The translucent resin 16 protects the semiconductor light emitting element 14 from external environments such as moisture, dust, and gas, and protects the bonding wire 15 from mechanical stress such as vibration and collision. In addition, the translucent resin 16 forms an interface with the light exit surface of the semiconductor light emitting element 14, and transmits the light emitted from the semiconductor light emitting element 14 from the light exit surface of the semiconductor light emitting element 14. It also has a function to output efficiently inside.

By the way, the inner circumferential surface 11 of the recess 8 has a metal pattern 9a extending from the edge of the base substrate 3 so as to cover the inner circumferential portion 10. The metal pattern is formed on the inner circumferential surface 6b of the through hole 4b of the insulating substrate 1a and the inner circumferential surface 6a of the through hole 4a of the adhesive sheet 2, respectively. The part in which 9a) is not formed is provided. As a specific method, after the metal pattern 9a is formed on the entire surface of the inner circumferential portion 10 of the recess 8, the metal pattern 9a is partially removed by etching.

In this case, in the inner circumferential surface 6a of the through hole 4a of the adhesive sheet 2, the portion from which the metal pattern 9a has been removed is not from the upper end to the lower end of the inner circumferential surface 6a, but in the upper end portion. From the end to the bottom. That is, the bottom of the inner circumferential surface 6a remains without the metal pattern 9a being removed.

The translucent resin filled in the concave portion having the inner bottom surface and the inner circumferential surface includes a metal pattern constituting a part of the inner bottom surface and the inner circumferential surface, and a through hole 4a of the adhesive sheet 2 from which the metal pattern on the inner circumferential surface is removed. ) And the inner peripheral surfaces 6a and 6b of the through holes 4b of the insulating substrate 1a to form an interface.

At this time, the adhesive force to the translucent resin is stronger in the exposed adhesive sheet and insulating substrate than in the metal pattern. Therefore, even when a thermal stress is applied by the light-transmissive resin in a high-temperature mounting environment and in a practical use state, the adhesive sheet and the insulating substrate are exposed than the entire surface of the inner circumferential portion of the recess in which the semiconductor light emitting element is mounted is covered with a metal pattern. In this case, the effect of inhibiting peeling is very strongly acted.

As a result, the force that lifts the conductive adhesive and the semiconductor light emitting element upward on the metal pattern on the inner bottom of the recess is not applied by the light-transmissive resin, and the conductive adhesive applied on the metal pattern on the bottom of the recess is peeled off from the metal pattern. It is possible to realize a highly reliable semiconductor light emitting device which is suppressed and does not cause optical characteristic deterioration and electrical characteristic defects during mounting and for long-term use.

Meanwhile, the metal pattern 9a on the inner circumferential surface of the recess is removed to expose the inner circumferential surface 6a of the through hole 4a of the adhesive sheet 2 and the inner circumferential surface 6b of the through hole 4b of the insulating substrate 1a. It is preferable that the portions are provided in any shape in at least one place, but two portions are provided in substantially the same shape at symmetrical positions with the semiconductor light emitting element located in the center of the concave portion interposed therebetween, It is more preferable to install. This is because the adhesion between the light-transmissive resin and the exposed portion is prevented from being biased to one side, whereby more reliable peeling control can be achieved. In this embodiment, the exposed portions are formed in four places sandwiching the semiconductor light emitting elements.

In this embodiment, the recessed inner peripheral portion formed by each of the inner peripheral surfaces 6a and 6b of the through hole 4a of the adhesive sheet 2 and the through hole 4b of the insulating substrate 1a is the adhesive sheet 2. From the through hole 4a of the through hole 4a toward the opening 7 of the through hole 4b of the insulating substrate 1a at an approximately same angle with respect to the central axis X of the through hole 4a and the through hole 4b. The inner peripheral surfaces 6a and 6b form a continuous surface while being composed of surfaces inclined to the side.

This reflects the light emitted from the semiconductor light emitting device in the substantially horizontal direction to the metal pattern of the inner circumferential surface of the concave portion and emits as much light as possible upward to the outside, the exposed adhesive sheet, the insulating substrate, and the light transmitting property. It has two effects, a mechanical effect of suppressing peeling by adhesion to the resin.

Therefore, the area of the metal pattern remaining after removal, the shape of the exposed portion, the area, the number of arrangements, and the like are determined in consideration of the optical and mechanical properties required for the semiconductor light emitting device.

Up to now, the semiconductor light emitting device mounted in the concave portion has been described as having the structure in which electrodes for driving the semiconductor light emitting device are arranged on both upper and lower surfaces of the semiconductor light emitting device. Only some are placed. However, it is common for the metal film for joining and fixing to be formed also in the surface which faces an electrode.

The semiconductor light emitting device in which the semiconductor light emitting element having such a structure is mounted has a configuration as shown in FIGS. 3 and 4. 3 is a perspective view and FIG. 4 is a sectional view taken along the line A-A of FIG.

The semiconductor light emitting device of this structure is the same as the semiconductor light emitting device of FIGS. 1 and 2 except that the structure of the metal pattern formed on the base substrate is different.

Specific differences in the metal pattern configuration from FIGS. 1 and 2 are as follows. In the semiconductor light emitting device of the present configuration, each of the pair of metal patterns 9a and 9b formed at the opposite edge portions on the surface side of the base substrate 3 extends inward and is directly in front of the concave portion 8. It is stopped. Moreover, the metal pattern 9c which forms the inner peripheral surface 11 and the inner bottom surface 12 of the recessed part 8 is integrated. That is, the metal pattern is a metal which integrally forms the inner circumferential surface 11 and the inner bottom surface 12 of each of the metal patterns 9a and 9b and the concave portion 8 extending inwardly from the edge portion of the base substrate 3. The pattern 9c consists of three metal patterns separated and independent from each other.

Then, the semiconductor light emitting element 14 is placed on the metal pattern 9c of the inner bottom surface 12 of the recess 8 formed by separating and independence through the adhesive 17, and disposed on the upper surface of the semiconductor light emitting element 14. The two electrodes thus formed are connected to the two metal patterns 9a and 9b extending inwardly through the bonding wire 15.

Further, portions removed by etching through the metal pattern 9a on each of the inner circumferential surface 6b of the through hole 4b of the insulating substrate 1a and the inner circumferential surface 6a of the through hole 4a of the adhesive sheet 2. In particular, the portion where the metal pattern 9a is removed from the inner circumferential surface 6a of the through hole 4a of the adhesive sheet 2 is until it reaches the lower end from the upper end of the inner circumferential surface 6a. That is, the metal pattern 9a is removed from the upper end part to the lower end part of the inner peripheral surface 6a.

In addition, in the above embodiment, the recessed portion 8 is formed so that the inner peripheral portion 10 of the recessed portion 8 is formed from the through hole 4b of the insulating substrate 1a from the through hole 4a of the adhesive sheet 2. Although it was comprised from the surface which inclined outward at substantially the same angle with respect to the center hole X of the through-hole 4a and the through-hole 4b toward the opening 7, it is not limited to this, For example, You may be comprised with the surface parallel to the center axis X of a through-hole.

Also in this case, the metal pattern 9c of the inner peripheral surface 11 of the recess 8 is removed, so that the inner peripheral surface 6a of the through hole 4a of the adhesive sheet 2 and the through hole 4b of the insulating substrate 1a. The portion exposed by the inner circumferential surface 6b of the at least one portion is preferably formed in any shape at least one or more, and is substantially positioned at a symmetrical position with the semiconductor light emitting element 14 positioned at the center of the recess 8 interposed therebetween. Of course, it is more preferable that one or more places are installed in two or more places in the same shape.

In the above, the inner circumferential surface 6a of the through hole 4a of the adhesive sheet 2 forming the inner circumferential portion 10 of the recess 8 and the inner circumferential surface 6b of the through hole 4b of the insulating substrate 1a. Each part was exposed from the metal pattern, and only a part of the inner circumferential surface 6a of the through hole 4a of the adhesive sheet 2 was exposed from the metal pattern, and the inner circumferential surface of the through hole 4b of the insulating substrate 1a ( 6b) may cover the whole with a metal pattern. In this case, adhesion between the transparent resin and the interface of the exposed portion of the inner circumferential surface 6a of the through hole 4a of the adhesive sheet 2 is secured to exert a mechanical effect of suppressing peeling and at the same time penetrating the insulating substrate 1a. The optical reflection surface covering the entire surface of the inner circumferential surface 6b of the hole 4b also simultaneously exhibits an optical effect of effectively emitting light emitted from the semiconductor light emitting element in a substantially horizontal direction to the outside.

In addition, as shown in FIG. 5, the adhesive sheet 2 can also be protruded in the recessed part 8. As shown in FIG. In this case, the contact area between the translucent resin 16 and the adhesive sheet 2 filled in the recess 8 is increased, so that the adhesion between the two members is increased, and the inner bottom 12 of the recess 8 is opened. The effect of suppressing the peeling of the metal pattern 9c to be formed and the conductive adhesive 13 which fixes the semiconductor light emitting element 14 to the metal pattern 9c is very strong. In this case as well, the inner circumferential surface 6b of the through hole 4b of the insulating substrate 1a may be covered with a front metal pattern to form a reflective surface.

In addition, the board | substrate (the board | substrate which comprises the inner bottom part of the recessed part) in which the semiconductor light emitting element is mounted may be made into a metal board instead of an insulating board. In that case, it is necessary to provide an insulating layer between the metal substrate and the metal pattern at least in the portion where the metal pattern is formed. By using the substrate as a metal substrate, heat dissipation from the semiconductor light emitting device can be improved, thereby reducing luminous efficiency due to heat of the semiconductor light emitting device, ensuring brightness, suppressing stress of the sealing resin due to heat, and preventing peeling. .

6 is a cross-sectional view showing another embodiment. The base substrate 3 is formed by joining the insulating substrate 1 and the separated metal plates 18a and 18b with the adhesive sheet 2 interposed therebetween. The adhesive sheet 2 and the insulating substrate 1 are provided with substantially circular through-holes 4a and 4b at their central portions, respectively. The through holes 4a of the adhesive sheet 2 and the through holes 4b of the insulating substrate 1 are located on approximately the same straight line, each center of which is perpendicular to the metal plate 18a. That is, the center portion of the base substrate 3 is in contact with the adhesive sheet 2 and has a metal plate 18a having no through hole as the inner bottom, and the through hole 4a and the insulating substrate 1 of the adhesive sheet 2 are formed. The inner circumferential surface 6a, 6b of each of the through-holes 4b of the inner wall is formed as an inner circumferential portion, and a concave portion 8 is formed in which one of the through-holes 4b of the insulating substrate 1 serves as an opening 7. have.

In the base substrate 3 of the above configuration, a pair of metal patterns 9a and 9b are formed at opposite edges on the surface side, and one of the metal patterns 9b is formed of an insulating substrate 1 and an adhesive sheet. It is connected to the metal plate 18b from each edge part of (2) via the side surface side, and the other metal pattern 9a has one end part extended to a part of the inner peripheral surface 6b of the insulated substrate 1, and The other end is connected to the metal plate 18a via the side surface from each edge of the insulating substrate 1 and the adhesive sheet 2.

Then, the semiconductor light emitting element 14 is placed on the metal plate 18a forming the inner bottom face 12a of the recess 8 through the conductive adhesive 13, and the lower electrode and the metal plate 18a of the semiconductor light emitting element 14 are placed. ) Electrical conduction is intended. On the other hand, the upper electrode of the semiconductor light emitting element 14 is connected to the metal pattern 9b through the bonding wire 15, and electrical connection between the upper electrode of the semiconductor light emitting element 14 and the metal pattern 9b is intended. .

Further, the semiconductor light emitting element 14 and the bonding wire 15 are resin sealed so as to be covered by the light transmissive resin 16.

Also in this embodiment, the insulating substrate 1 and the adhesive sheet 2 and the translucent resin 16 exposed in the recess 8 are brought into close contact with each other to form an interface, and due to the strong adhesion between the two members forming the interface. Even when a thermal stress by the light-transmissive resin 16 is applied in a high-temperature mounting environment and in a practical use state, the action of suppressing peeling becomes very strong.

As a result, no force is applied to the conductive adhesive 13 and the semiconductor light emitting element 14 by the light-transmissive resin 16 above the metal plate 18a of the inner bottom surface 12 of the recessed portion. (8) It is suppressed that the metal plate 18a of the inner bottom 12 is peeled off from the metal plate 18a of the conductive adhesive 13 to which it is applied, so that optical deterioration and electrical property deterioration may not be caused during mounting and long-term use. A highly reliable semiconductor light emitting device can be realized.

In addition, by providing the metal plate 18a under the semiconductor light emitting element 14, the heat dissipation property when the semiconductor light emitting device is mounted can be improved, and the luminous efficiency of the semiconductor light emitting element 14 can be improved and the life time can be expected. .

In addition, in all the above-mentioned embodiments, the adhesive sheet may be a sheet made of a resin adhesive, or may be formed by coating an insulator with a resin adhesive. It is preferable that the resin adhesive is made of the same kind of material as the sealing resin of the semiconductor light emitting element. For example, when the sealing resin is an epoxy resin, it is appropriate to use an epoxy resin adhesive. In the semiconductor light emitting device, an LED device emitting light of a desired wavelength is appropriately selected from a light emitting diode (LED) device that emits light in the ultraviolet-visible-infrared region.

In addition, the sealing resin can use silicone resin other than the above-mentioned epoxy resin. Furthermore, mixing the diffusing agent into the sealing resin to emit light to the outside to diffuse the light, and mixing the phosphor as a wavelength conversion member to emit light of a different color from the light emitted from the semiconductor light emitting element, the diffusing agent And both phosphors can be mixed to have both effects simultaneously.

The semiconductor light emitting device of the present invention employs a base substrate constituting a semiconductor light emitting device in which at least one substrate is bonded to each other with an adhesive sheet interposed therebetween, and penetrates the insulating substrate and the adhesive sheet. A recess was provided, and a metal pattern was formed in the inner bottom part and the inner peripheral part of the recess. Then, a portion of the metal pattern forming the inner circumferential surface of the recess is removed, and a portion of the adhesive sheet or each of the adhesive sheet and the insulating substrate is exposed in the recess to seal the semiconductor light emitting element mounted in the recess. A portion of the adhesive sheet exposed to the resin and the recess or a portion of each of the adhesive sheet and the insulating substrate was brought into close contact to form an interface.

As a result, the contact surface between the sealing resin and part of the exposed adhesive sheet or each part of the adhesive sheet and the insulating substrate is stronger than the contact interface between the sealing resin and the metal pattern. Even if the sealing stress is affected by the thermal stress of the sealing resin, the interface peeling between the metal pattern formed on the inner bottom surface of the concave portion and the adhesive or conductive adhesive fixing the semiconductor light emitting element to the metal pattern can be suppressed.

Therefore, by suppressing the interface peeling between the metal pattern formed on the inner bottom surface of the concave portion and the adhesive or conductive adhesive fixing the semiconductor light emitting element to the metal pattern, highly reliable semiconductor light emitting device that does not cause optical characteristic deterioration and electrical defects Can be realized.

Claims (6)

At least one semiconductor light emitting device; A semiconductor light emitting device mounting substrate forming an inner bottom of a concave portion for mounting the semiconductor light emitting device; An insulating substrate having a first through hole forming an inner circumferential portion of the recess; A second through hole constituting the inner circumference of the recess, and a line connecting the center of the first through hole and the second through hole to be perpendicular to the mounting substrate of the semiconductor light emitting device; An adhesive sheet disposed between the insulating substrates to bond the two substrates; A metal reflecting surface covering a portion of an inner circumferential portion of the concave portion formed by the first through hole and the second through hole; A metal pattern formed on an inner bottom of the concave portion for electrical connection with the semiconductor light emitting device; And It includes a sealing resin for sealing the semiconductor light emitting element mounted in the recess, The first through hole and the second through hole are formed as a surface that is inclined outward at the same angle with respect to a line connecting each center from the second through hole toward the opening of the first through hole, and is formed as a continuous surface. Become, At least a portion of the inner circumferential surface of the second through hole is exposed to the sealing resin portion, and at least a portion of the inner circumferential surface of the second through hole exposed to the sealing resin portion is symmetrically positioned around the semiconductor light emitting element. A semiconductor light emitting device, characterized in that each is provided. The method of claim 1, And the largest portion of the inner circumferential surface of the second through hole is smaller than or equal to the smallest portion of the inner circumferential surface of the first through hole. delete The method of claim 1, And the inner circumferential portion is inclined outward at an angle with respect to the central axis of the first through hole and the second through hole. The method of claim 1, And the inner circumference portion is parallel to the central axis of the first through hole and the second through hole. The method of claim 1, The semiconductor light emitting device mounting substrate is a metal substrate, And an insulating layer is formed between the metal substrate and the metal pattern.
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KR20070026011A (en) 2007-03-08
CN1925179B (en) 2010-05-26

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