KR101046523B1 - 케미컬 산화막의 제거 방법 - Google Patents
케미컬 산화막의 제거 방법 Download PDFInfo
- Publication number
- KR101046523B1 KR101046523B1 KR1020057016676A KR20057016676A KR101046523B1 KR 101046523 B1 KR101046523 B1 KR 101046523B1 KR 1020057016676 A KR1020057016676 A KR 1020057016676A KR 20057016676 A KR20057016676 A KR 20057016676A KR 101046523 B1 KR101046523 B1 KR 101046523B1
- Authority
- KR
- South Korea
- Prior art keywords
- oxide film
- gas
- chemical
- chemical oxide
- processing
- Prior art date
Links
- 239000000126 substance Substances 0.000 title claims abstract description 114
- 238000000034 method Methods 0.000 title claims abstract description 53
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 61
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 59
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 239000011259 mixed solution Substances 0.000 claims description 5
- 239000010408 film Substances 0.000 description 244
- 239000007789 gas Substances 0.000 description 149
- 235000012431 wafers Nutrition 0.000 description 61
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 49
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 49
- 238000005530 etching Methods 0.000 description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 25
- 229910052710 silicon Inorganic materials 0.000 description 24
- 239000010703 silicon Substances 0.000 description 23
- 239000004065 semiconductor Substances 0.000 description 22
- 230000003647 oxidation Effects 0.000 description 21
- 238000007254 oxidation reaction Methods 0.000 description 21
- 229910004298 SiO 2 Inorganic materials 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 239000002210 silicon-based material Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011553 magnetic fluid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000002407 reforming Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
Claims (15)
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 진공화 가능하게 이루어진 처리 용기 내에서 피처리체의 표면에 형성되어 있는 실리콘 산화막이며, H2O2 와 NH4OH의 혼합 용액을 사용한 케미컬 처리에 의해 형성된 케미컬 산화막을 제거하기 위한 케미컬 산화막의 제거 방법에 있어서,HF 가스와 NH3 가스의 혼합 가스를 이용하여 상기 케미컬 산화막을 제거하고,실리콘 질화막에 대한 상기 케미컬 산화막의 선택성을 얻기 위해 처리 온도는 200 ℃ 내지 600 ℃의 범위 내인 것을 특징으로 하는 케미컬 산화막의 제거 방법.
- 진공화 가능하게 이루어진 처리 용기 내에서 피처리체의 표면에 형성되어 있는 실리콘 산화막이며, H2O2 와 NH4OH의 혼합 용액을 사용한 케미컬 처리에 의해 형성된 케미컬 산화막을 제거하기 위한 케미컬 산화막의 제거 방법에 있어서,HF 가스와 NH3 가스의 혼합 가스를 이용하여 상기 케미컬 산화막을 제거하고,TEOS에 의해 형성된 실리콘 산화막에 대한 상기 케미컬 산화막의 선택성을 얻기 위해 처리 온도는 300 ℃ 내지 400 ℃의 범위 내인 것을 특징으로 하는 케미컬 산화막의 제거 방법.
- 진공화 가능하게 이루어진 처리 용기 내에서 피처리체의 표면에 형성되어 있는 실리콘 산화막이며, H2O2 와 NH4OH의 혼합 용액을 사용한 케미컬 처리에 의해 형성된 케미컬 산화막을 제거하기 위한 케미컬 산화막의 제거 방법에 있어서,HF 가스와 NH3 가스의 혼합 가스를 이용하여 상기 케미컬 산화막을 제거하고,열산화막에 대한 상기 케미컬 산화막의 선택성을 얻기 위해 처리 온도는 100 ℃ 내지 600 ℃의 범위 내로 설정되는 것을 특징으로 하는 케미컬 산화막의 제거 방법.
- 제7항 내지 제9항 중 어느 한 항에 있어서, 상기 HF 가스와 NH3 가스의 유량비는 1 : 10 내지 1 : 50의 범위 내로 설정되는 것을 특징으로 하는 케미컬 산화막의 제거 방법.
- 제7항 내지 제9항 중 어느 한 항에 있어서, 상기 처리 압력은 1011 Pa(7.6 Torr) 이하로 설정되는 것을 특징으로 하는 케미컬 산화막의 제거 방법.
- 삭제
- 삭제
- 삭제
- 삭제
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2003-00117664 | 2003-04-22 | ||
JP2003117664 | 2003-04-22 | ||
PCT/JP2004/005643 WO2004095559A1 (ja) | 2003-04-22 | 2004-04-20 | シリコン酸化膜の除去方法及び処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20060002805A KR20060002805A (ko) | 2006-01-09 |
KR101046523B1 true KR101046523B1 (ko) | 2011-07-04 |
Family
ID=33308046
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020057016676A KR101046523B1 (ko) | 2003-04-22 | 2004-04-20 | 케미컬 산화막의 제거 방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7611995B2 (ko) |
KR (1) | KR101046523B1 (ko) |
CN (2) | CN100533683C (ko) |
TW (1) | TW200501254A (ko) |
WO (1) | WO2004095559A1 (ko) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7705385B2 (en) * | 2005-09-12 | 2010-04-27 | International Business Machines Corporation | Selective deposition of germanium spacers on nitride |
US20100216296A1 (en) * | 2005-10-27 | 2010-08-26 | Yusuke Muraki | Processing Method and Recording Medium |
US8343280B2 (en) * | 2006-03-28 | 2013-01-01 | Tokyo Electron Limited | Multi-zone substrate temperature control system and method of operating |
US20070238301A1 (en) * | 2006-03-28 | 2007-10-11 | Cabral Stephen H | Batch processing system and method for performing chemical oxide removal |
US7718032B2 (en) * | 2006-06-22 | 2010-05-18 | Tokyo Electron Limited | Dry non-plasma treatment system and method of using |
JP4994724B2 (ja) * | 2006-07-07 | 2012-08-08 | 株式会社東芝 | 成膜装置及び成膜方法 |
JP4939864B2 (ja) * | 2006-07-25 | 2012-05-30 | 東京エレクトロン株式会社 | ガス供給装置、ガス供給方法、薄膜形成装置の洗浄方法、薄膜形成方法及び薄膜形成装置 |
JP5211464B2 (ja) * | 2006-10-20 | 2013-06-12 | 東京エレクトロン株式会社 | 被処理体の酸化装置 |
US7786016B2 (en) * | 2007-01-11 | 2010-08-31 | Micron Technology, Inc. | Methods of uniformly removing silicon oxide and a method of removing a sacrificial oxide |
JP4776575B2 (ja) | 2007-03-28 | 2011-09-21 | 株式会社東芝 | 表面処理方法、エッチング処理方法および電子デバイスの製造方法 |
WO2009001774A1 (ja) * | 2007-06-22 | 2008-12-31 | Ulvac, Inc. | 半導体ウェーハの保護方法及び半導体装置の製造方法 |
KR101330707B1 (ko) * | 2007-07-19 | 2013-11-19 | 삼성전자주식회사 | 반도체 장치의 형성 방법 |
US8252194B2 (en) | 2008-05-02 | 2012-08-28 | Micron Technology, Inc. | Methods of removing silicon oxide |
KR100870914B1 (ko) * | 2008-06-03 | 2008-11-28 | 주식회사 테스 | 실리콘 산화막의 건식 식각 방법 |
JP5158068B2 (ja) * | 2009-02-20 | 2013-03-06 | 東京エレクトロン株式会社 | 縦型熱処理装置及び熱処理方法 |
JP5520552B2 (ja) * | 2009-09-11 | 2014-06-11 | 株式会社日立国際電気 | 半導体装置の製造方法及び基板処理装置 |
CN102569020B (zh) * | 2010-12-10 | 2015-01-14 | 有研新材料股份有限公司 | 一种8英寸晶圆切口氧化膜去除方法和装置 |
GB2487716B (en) * | 2011-01-24 | 2015-06-03 | Memsstar Ltd | Vapour Etch of Silicon Dioxide with Improved Selectivity |
JP5661523B2 (ja) * | 2011-03-18 | 2015-01-28 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
JP5917861B2 (ja) * | 2011-08-30 | 2016-05-18 | 株式会社Screenホールディングス | 基板処理方法 |
WO2013175872A1 (ja) * | 2012-05-23 | 2013-11-28 | 東京エレクトロン株式会社 | ガス処理方法 |
WO2015020792A1 (en) * | 2013-08-09 | 2015-02-12 | Applied Materials, Inc. | Method and apparatus for precleaning a substrate surface prior to epitaxial growth |
JP6426489B2 (ja) * | 2015-02-03 | 2018-11-21 | 東京エレクトロン株式会社 | エッチング方法 |
US10622205B2 (en) * | 2015-02-16 | 2020-04-14 | Tokyo Electron Limited | Substrate processing method and substrate processing apparatus |
WO2017176027A1 (ko) * | 2016-04-05 | 2017-10-12 | 주식회사 테스 | 실리콘산화막의 선택적 식각 방법 |
JP6726610B2 (ja) | 2016-12-13 | 2020-07-22 | 東京エレクトロン株式会社 | エッチング方法及び基板処理システム |
JP2018170387A (ja) * | 2017-03-29 | 2018-11-01 | 東京エレクトロン株式会社 | 成膜方法及び縦型熱処理装置 |
JP7038564B2 (ja) * | 2018-02-22 | 2022-03-18 | 東京エレクトロン株式会社 | 膜形成方法及び基板処理装置 |
JP6860537B2 (ja) * | 2018-09-25 | 2021-04-14 | 株式会社Kokusai Electric | クリーニング方法、半導体装置の製造方法、基板処理装置、およびプログラム |
JP2022036756A (ja) * | 2020-08-24 | 2022-03-08 | キオクシア株式会社 | 半導体装置 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE68928402T2 (de) * | 1988-12-27 | 1998-03-12 | Toshiba Kawasaki Kk | Verfahren zur Entfernung einer Oxidschicht auf einem Substrat |
JP2902012B2 (ja) | 1989-10-27 | 1999-06-07 | 国際電気株式会社 | 低圧酸化装置 |
JP2853211B2 (ja) | 1989-11-01 | 1999-02-03 | 富士通株式会社 | 半導体装置の製造方法 |
US5268069A (en) * | 1991-10-28 | 1993-12-07 | International Business Machines Corporation | Safe method for etching silicon dioxide |
JPH05326464A (ja) * | 1992-05-15 | 1993-12-10 | Dainippon Screen Mfg Co Ltd | 基板表面の気相洗浄方法 |
JPH0697140A (ja) * | 1992-09-14 | 1994-04-08 | Toshiba Corp | 半導体基板処理方法 |
US5282925A (en) | 1992-11-09 | 1994-02-01 | International Business Machines Corporation | Device and method for accurate etching and removal of thin film |
JP2833946B2 (ja) | 1992-12-08 | 1998-12-09 | 日本電気株式会社 | エッチング方法および装置 |
JPH06244153A (ja) * | 1993-02-16 | 1994-09-02 | Matsushita Electric Ind Co Ltd | ドライエッチング方法 |
JPH08195381A (ja) * | 1995-01-17 | 1996-07-30 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH1140770A (ja) * | 1997-07-18 | 1999-02-12 | Nec Corp | 半導体装置の製造方法および半導体製造装置 |
US6635185B2 (en) * | 1997-12-31 | 2003-10-21 | Alliedsignal Inc. | Method of etching and cleaning using fluorinated carbonyl compounds |
JP3436256B2 (ja) | 2000-05-02 | 2003-08-11 | 東京エレクトロン株式会社 | 被処理体の酸化方法及び酸化装置 |
US6335261B1 (en) * | 2000-05-31 | 2002-01-01 | International Business Machines Corporation | Directional CVD process with optimized etchback |
US6926843B2 (en) * | 2000-11-30 | 2005-08-09 | International Business Machines Corporation | Etching of hard masks |
KR100520600B1 (ko) * | 2003-02-17 | 2005-10-10 | 주식회사 하이닉스반도체 | 반도체소자의 캐패시터 제조방법 |
-
2004
- 2004-04-20 KR KR1020057016676A patent/KR101046523B1/ko active IP Right Grant
- 2004-04-20 CN CNB2007101616523A patent/CN100533683C/zh not_active Expired - Fee Related
- 2004-04-20 TW TW093110984A patent/TW200501254A/zh not_active IP Right Cessation
- 2004-04-20 WO PCT/JP2004/005643 patent/WO2004095559A1/ja active Application Filing
- 2004-04-20 CN CNB2004800110434A patent/CN100377317C/zh not_active Expired - Fee Related
- 2004-04-20 US US10/552,262 patent/US7611995B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN100533683C (zh) | 2009-08-26 |
TWI331364B (ko) | 2010-10-01 |
US20060216941A1 (en) | 2006-09-28 |
CN101131929A (zh) | 2008-02-27 |
KR20060002805A (ko) | 2006-01-09 |
US7611995B2 (en) | 2009-11-03 |
CN1777980A (zh) | 2006-05-24 |
CN100377317C (zh) | 2008-03-26 |
TW200501254A (en) | 2005-01-01 |
WO2004095559A1 (ja) | 2004-11-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101046523B1 (ko) | 케미컬 산화막의 제거 방법 | |
KR101014062B1 (ko) | 성막 방법 및 성막 장치 | |
KR100861851B1 (ko) | 실리콘 산화막 형성 방법 및 장치 | |
TWI436425B (zh) | 改善選擇性氧化處理之氧化物成長速率的方法 | |
JP4281082B2 (ja) | 堆積前の表面調整方法 | |
US7105055B2 (en) | In situ growth of oxide and silicon layers | |
US11335554B2 (en) | Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium | |
TW202013479A (zh) | 蝕刻方法及蝕刻裝置 | |
KR20190101893A (ko) | 고품질 에칭 저항성 갭필 유전체 막의 퇴적 및 리플로우를 위한 방법 | |
US12033852B2 (en) | Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium | |
JP2007516599A (ja) | ゲルマニウム上の堆積前の表面調製 | |
KR20080029846A (ko) | 실리콘 산화막을 형성하기 위한 성막 방법 및 장치 | |
US20240071752A1 (en) | Method of processing substrate, substrate processing apparatus, method of manufacturing semiconductor device, and recording medium | |
KR100935260B1 (ko) | 피처리체의 산화 방법, 산화 장치 및 기억 매체 | |
JP4039385B2 (ja) | ケミカル酸化膜の除去方法 | |
KR101139078B1 (ko) | 반도체 처리용 성막 장치 및 그 사용 방법과, 컴퓨터로판독 가능한 매체 | |
US11923191B2 (en) | Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus, and recording medium | |
JP2007528602A (ja) | 高誘電率集積用のシリコンゲルマニウム表面層 | |
JP2002176052A (ja) | 被処理体の酸化方法及び酸化装置 | |
KR20060042203A (ko) | 피처리체의 산화 방법, 산화 장치 및 기억 매체 | |
JP4851647B2 (ja) | 酸化層及びシリコン層のインサイチュウ成長 | |
JP2024047208A (ja) | 基板処理方法、半導体装置の製造方法、基板処理システム、およびプログラム | |
JP4112591B2 (ja) | 半導体装置の製造方法および基板処理装置 | |
JPH0845852A (ja) | 気相成長装置と気相成長方法 | |
JP2002043313A (ja) | シリコン酸化膜の形成方法及び形成装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20140603 Year of fee payment: 4 |
|
FPAY | Annual fee payment |
Payment date: 20150601 Year of fee payment: 5 |
|
FPAY | Annual fee payment |
Payment date: 20160527 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20170530 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20180618 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20190618 Year of fee payment: 9 |