TW200501254A - Method for removing silicon oxide film and processing apparatus - Google Patents

Method for removing silicon oxide film and processing apparatus

Info

Publication number
TW200501254A
TW200501254A TW093110984A TW93110984A TW200501254A TW 200501254 A TW200501254 A TW 200501254A TW 093110984 A TW093110984 A TW 093110984A TW 93110984 A TW93110984 A TW 93110984A TW 200501254 A TW200501254 A TW 200501254A
Authority
TW
Taiwan
Prior art keywords
oxide film
silicon oxide
gas
processing apparatus
removing silicon
Prior art date
Application number
TW093110984A
Other languages
Chinese (zh)
Other versions
TWI331364B (en
Inventor
Kazuhide Hasebe
Mitsuhiro Okada
Takashi Chiba
Jun Ogawa
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200501254A publication Critical patent/TW200501254A/en
Application granted granted Critical
Publication of TWI331364B publication Critical patent/TWI331364B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

A method for removing a silicon oxide film is disclosed which enables to efficiently remove a silicon oxide film such as a natural oxide film or a chemical oxide film at a temperature considerably higher than room temperature. In the method for removing a silicon oxide film formed on the surface of an object (W) to be processed within an evacuatable process chamber (18), the silicon oxide film is removed by using a mixed gas of HF gas and NH3 gas. By using the mixed gas of HF gas and NH3 gas, the silicon oxide film formed on the surface of the object can be efficiently removed.
TW093110984A 2003-04-22 2004-04-20 Method for removing silicon oxide film and processing apparatus TW200501254A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003117664 2003-04-22

Publications (2)

Publication Number Publication Date
TW200501254A true TW200501254A (en) 2005-01-01
TWI331364B TWI331364B (en) 2010-10-01

Family

ID=33308046

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093110984A TW200501254A (en) 2003-04-22 2004-04-20 Method for removing silicon oxide film and processing apparatus

Country Status (5)

Country Link
US (1) US7611995B2 (en)
KR (1) KR101046523B1 (en)
CN (2) CN100533683C (en)
TW (1) TW200501254A (en)
WO (1) WO2004095559A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI789705B (en) * 2020-08-24 2023-01-11 日商鎧俠股份有限公司 Semiconductor device

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US20100216296A1 (en) * 2005-10-27 2010-08-26 Yusuke Muraki Processing Method and Recording Medium
US8343280B2 (en) * 2006-03-28 2013-01-01 Tokyo Electron Limited Multi-zone substrate temperature control system and method of operating
US20070238301A1 (en) * 2006-03-28 2007-10-11 Cabral Stephen H Batch processing system and method for performing chemical oxide removal
US7718032B2 (en) * 2006-06-22 2010-05-18 Tokyo Electron Limited Dry non-plasma treatment system and method of using
JP4994724B2 (en) * 2006-07-07 2012-08-08 株式会社東芝 Film forming apparatus and film forming method
JP4939864B2 (en) * 2006-07-25 2012-05-30 東京エレクトロン株式会社 Gas supply apparatus, gas supply method, thin film forming apparatus cleaning method, thin film forming method, and thin film forming apparatus
JP5211464B2 (en) * 2006-10-20 2013-06-12 東京エレクトロン株式会社 Oxidizer for workpiece
US7786016B2 (en) * 2007-01-11 2010-08-31 Micron Technology, Inc. Methods of uniformly removing silicon oxide and a method of removing a sacrificial oxide
JP4776575B2 (en) 2007-03-28 2011-09-21 株式会社東芝 Surface treatment method, etching treatment method, and electronic device manufacturing method
WO2009001774A1 (en) * 2007-06-22 2008-12-31 Ulvac, Inc. Method for protecting semiconductor wafer and process for producing semiconductor device
KR101330707B1 (en) * 2007-07-19 2013-11-19 삼성전자주식회사 Method of forming Semiconducotr Device
US8252194B2 (en) 2008-05-02 2012-08-28 Micron Technology, Inc. Methods of removing silicon oxide
KR100870914B1 (en) * 2008-06-03 2008-11-28 주식회사 테스 Dry etch method for silicon oxide
JP5158068B2 (en) * 2009-02-20 2013-03-06 東京エレクトロン株式会社 Vertical heat treatment apparatus and heat treatment method
JP5520552B2 (en) * 2009-09-11 2014-06-11 株式会社日立国際電気 Semiconductor device manufacturing method and substrate processing apparatus
CN102569020B (en) * 2010-12-10 2015-01-14 有研新材料股份有限公司 Method and device for removing cut oxidation films of 8-inch wafers
GB2487716B (en) * 2011-01-24 2015-06-03 Memsstar Ltd Vapour Etch of Silicon Dioxide with Improved Selectivity
JP5661523B2 (en) * 2011-03-18 2015-01-28 東京エレクトロン株式会社 Film forming method and film forming apparatus
JP5917861B2 (en) * 2011-08-30 2016-05-18 株式会社Ｓｃｒｅｅｎホールディングス Substrate processing method
JP6110848B2 (en) * 2012-05-23 2017-04-05 東京エレクトロン株式会社 Gas processing method
CN110735181A (en) 2013-08-09 2020-01-31 应用材料公司 Method and apparatus for pre-cleaning substrate surface prior to epitaxial growth
JP6426489B2 (en) * 2015-02-03 2018-11-21 東京エレクトロン株式会社 Etching method
US10622205B2 (en) * 2015-02-16 2020-04-14 Tokyo Electron Limited Substrate processing method and substrate processing apparatus
CN109075075B (en) * 2016-04-05 2023-06-06 Tes股份有限公司 Selective etching method for silicon oxide film
JP6726610B2 (en) * 2016-12-13 2020-07-22 東京エレクトロン株式会社 Etching method and substrate processing system
JP2018170387A (en) * 2017-03-29 2018-11-01 東京エレクトロン株式会社 Film growth method and vertical type thermal processing device
JP7038564B2 (en) * 2018-02-22 2022-03-18 東京エレクトロン株式会社 Film forming method and substrate processing equipment
JP6860537B2 (en) * 2018-09-25 2021-04-14 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ Cleaning methods, semiconductor device manufacturing methods, board processing devices, and programs

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI789705B (en) * 2020-08-24 2023-01-11 日商鎧俠股份有限公司 Semiconductor device

Also Published As

Publication number Publication date
US20060216941A1 (en) 2006-09-28
CN101131929A (en) 2008-02-27
CN100533683C (en) 2009-08-26
KR101046523B1 (en) 2011-07-04
US7611995B2 (en) 2009-11-03
TWI331364B (en) 2010-10-01
KR20060002805A (en) 2006-01-09
CN100377317C (en) 2008-03-26
CN1777980A (en) 2006-05-24
WO2004095559A1 (en) 2004-11-04

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