KR100880072B1 - 전기 광학 장치 및 전자 기기 - Google Patents
전기 광학 장치 및 전자 기기 Download PDFInfo
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- KR100880072B1 KR100880072B1 KR1020070040959A KR20070040959A KR100880072B1 KR 100880072 B1 KR100880072 B1 KR 100880072B1 KR 1020070040959 A KR1020070040959 A KR 1020070040959A KR 20070040959 A KR20070040959 A KR 20070040959A KR 100880072 B1 KR100880072 B1 KR 100880072B1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/40—Arrangements for improving the aperture ratio
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/10—Materials and properties semiconductor
- G02F2202/103—Materials and properties semiconductor a-Si
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/42—Materials having a particular dielectric constant
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- Power Engineering (AREA)
- Nonlinear Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
Claims (8)
- 소자 기판 상의 복수의 화소 영역 각각에, 게이트 전극, 게이트 절연층 및 반도체층이 적층된 박막 트랜지스터와, 상기 박막 트랜지스터의 드레인 영역에 전기적으로 접속된 화소 전극과, 상기 게이트 절연층을 구성하는 재료를 이용한 절연층을 사이에 두고 대향하는 하측 전극 및 상측 전극을 구비한 저장 용량을 갖는 전기 광학 장치에 있어서,상기 상측 전극은 상기 하측 전극의 외주 단부의 적어도 일부와 겹치도록 형성되고,상기 게이트 절연층은 상기 하측 전극과 상기 상측 전극이 겹치는 영역의 내측 영역에 막 두께가 얇은 박막 부분을 갖고, 상기 하측 전극의 외주 단부와 상기 상측 전극이 겹치는 부분에는 상기 박막 부분보다 막 두께가 두꺼운 후막 부분을 가지며,상기 하측 전극의 외주 단부와 상기 상측 전극이 겹치는 부분에 있어서, 상기 후막 부분에 있어서의 상기 하측 전극의 외주 단부로부터 내측을 향하는 폭 치수(w)는 상기 후막 부분의 막 두께(d) 이상인것을 특징으로 하는 전기 광학 장치.
- 제 1 항에 있어서,상기 박막 트랜지스터는 상기 게이트 전극, 상기 게이트 절연층 및 상기 반도체층이 하층측부터 순서대로 적층되어 있는 것을 특징으로 하는 전기 광학 장치.
- 제 1 항 또는 제 2 항에 있어서,상기 게이트 절연층은 상기 하측 전극과 상기 상측 전극이 겹치는 영역 중, 상기 하측 전극의 외주 단부와 상기 상측 전극이 겹치는 부분 이외의 영역에는 상기 박막 부분을 갖고 있는 것을 특징으로 하는 전기 광학 장치.
- 삭제
- 제 1 항 또는 제 2 항에 있어서,상기 게이트 절연층은 한 층 내지 복수 층의 절연막으로 이루어지는 하층측 게이트 절연층과, 한 층 내지 복수 층의 절연막으로 이루어지는 상층측 게이트 절연층을 구비하되,상기 게이트 절연층에서는 상기 하층측 게이트 절연층의 제거 부분에 의해 상기 박막 부분이 구성되고, 상기 하층측 게이트 절연층과 상기 상층측 게이트 절 연층이 적층된 부분에 의해 상기 후막 부분이 구성되어 있는 것을 특징으로 하는 전기 광학 장치.
- 제 5 항에 있어서,상기 하층측 게이트 절연층은 한 층의 절연막으로 구성되고,상기 상층측 게이트 절연층은 한 층의 절연막으로 구성되어 있는 것을 특징으로 하는 전기 광학 장치.
- 제 1 항 또는 제 2 항에 있어서,상기 반도체층은 아몰퍼스(amorphous) 실리콘 막으로 이루어지는 것을 특징으로 하는 전기 광학 장치.
- 청구항 1 또는 청구항 2에 기재된 전기 광학 장치를 구비하고 있는 것을 특징으로 하는 전자 기기.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2006-00121642 | 2006-04-26 | ||
JP2006121642A JP4215068B2 (ja) | 2006-04-26 | 2006-04-26 | 電気光学装置および電子機器 |
Publications (2)
Publication Number | Publication Date |
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KR20070105921A KR20070105921A (ko) | 2007-10-31 |
KR100880072B1 true KR100880072B1 (ko) | 2009-01-23 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020070040959A KR100880072B1 (ko) | 2006-04-26 | 2007-04-26 | 전기 광학 장치 및 전자 기기 |
Country Status (5)
Country | Link |
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US (1) | US7619256B2 (ko) |
JP (1) | JP4215068B2 (ko) |
KR (1) | KR100880072B1 (ko) |
CN (1) | CN100547801C (ko) |
TW (1) | TWI431377B (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20220047956A (ko) * | 2012-08-31 | 2022-04-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
Families Citing this family (20)
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JP5377940B2 (ja) * | 2007-12-03 | 2013-12-25 | 株式会社半導体エネルギー研究所 | 半導体装置 |
TWI413257B (zh) * | 2008-01-03 | 2013-10-21 | Au Optronics Corp | 薄膜電晶體、主動元件陣列基板以及液晶顯示面板 |
JP2009224542A (ja) * | 2008-03-17 | 2009-10-01 | Sony Corp | 半導体装置および表示装置 |
TWI518800B (zh) * | 2008-08-08 | 2016-01-21 | 半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
US7820506B2 (en) * | 2008-10-15 | 2010-10-26 | Micron Technology, Inc. | Capacitors, dielectric structures, and methods of forming dielectric structures |
TWI474408B (zh) | 2008-12-26 | 2015-02-21 | Semiconductor Energy Lab | 半導體裝置及其製造方法 |
CN101710586B (zh) * | 2009-01-09 | 2011-12-28 | 深超光电(深圳)有限公司 | 提高开口率的储存电容及其制作方法 |
US20100224878A1 (en) * | 2009-03-05 | 2010-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP2010249935A (ja) | 2009-04-13 | 2010-11-04 | Sony Corp | 表示装置 |
WO2011004755A1 (en) * | 2009-07-10 | 2011-01-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
CN103081079B (zh) * | 2010-08-30 | 2014-08-13 | 夏普株式会社 | 半导体装置及其制造方法 |
KR101924231B1 (ko) * | 2010-10-29 | 2018-11-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 기억 장치 |
TWI457676B (zh) * | 2011-12-09 | 2014-10-21 | Au Optronics Corp | 畫素結構及其製造方法 |
US9726954B2 (en) * | 2012-06-25 | 2017-08-08 | Sharp Kabushiki Kaisha | Active matrix substrate with thin film transistor and aperture portions, liquid crystal display device, and method for manufacturing active matrix substrate |
KR102484987B1 (ko) * | 2012-09-13 | 2023-01-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
US8981374B2 (en) * | 2013-01-30 | 2015-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
CN103296034A (zh) * | 2013-05-28 | 2013-09-11 | 京东方科技集团股份有限公司 | 一种阵列基板、制备方法以及显示装置 |
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JP2007293071A (ja) | 2007-11-08 |
KR20070105921A (ko) | 2007-10-31 |
US20070262352A1 (en) | 2007-11-15 |
TW200801745A (en) | 2008-01-01 |
US7619256B2 (en) | 2009-11-17 |
JP4215068B2 (ja) | 2009-01-28 |
CN101064322A (zh) | 2007-10-31 |
CN100547801C (zh) | 2009-10-07 |
TWI431377B (zh) | 2014-03-21 |
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