KR100852025B1 - 기판처리장치 - Google Patents
기판처리장치 Download PDFInfo
- Publication number
- KR100852025B1 KR100852025B1 KR1020080014344A KR20080014344A KR100852025B1 KR 100852025 B1 KR100852025 B1 KR 100852025B1 KR 1020080014344 A KR1020080014344 A KR 1020080014344A KR 20080014344 A KR20080014344 A KR 20080014344A KR 100852025 B1 KR100852025 B1 KR 100852025B1
- Authority
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- South Korea
- Prior art keywords
- substrate
- discharge port
- gas
- processing liquid
- nozzle
- Prior art date
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- 239000000758 substrate Substances 0.000 title claims abstract description 123
- 239000007788 liquid Substances 0.000 claims abstract description 118
- 239000012530 fluid Substances 0.000 claims abstract description 34
- 230000007246 mechanism Effects 0.000 claims abstract description 20
- 238000007599 discharging Methods 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 18
- 238000004140 cleaning Methods 0.000 abstract description 37
- 239000000203 mixture Substances 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 104
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 70
- 229910001873 dinitrogen Inorganic materials 0.000 description 68
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 52
- 239000002245 particle Substances 0.000 description 26
- 238000006243 chemical reaction Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 238000002474 experimental method Methods 0.000 description 7
- 238000003672 processing method Methods 0.000 description 7
- 230000007423 decrease Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000011859 microparticle Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
Description
Claims (7)
- 처리 대상의 기판을 지지하는 기판지지기구와,케이싱, 처리액을 토출하는 액체토출구 및 기체를 토출하는 기체토출구를 갖고, 상기 케이싱내에 처리액 및 기체를 도입하고, 상기 케이싱 밖에서 상기 액체토출구로부터 토출되는 처리액과 상기 기체토출구로부터 토출되는 기체를 혼합해서 상기 처리액 액적을 형성하고, 이 액적을 상기 기판지지기구에 지지된 기판의 표면에 공급하는 이류체노즐을 포함하고,상기 기체토출구는, 상기 액체토출구를 둘러싸는 원형 고리 형상으로 형성되고 있어, 이 원형고리 형상의 기체토출구의 외경이 2 밀리미터 이상 3.5 밀리미터 이하이며, 그 원형고리 형상의 기체토출구의 폭이 O.05 밀리미터 이상 0.2 밀리미터 이하인 것을 특징으로 하는 기판처리장치.
- 제1항에 있어서,상기 이류체노즐이, 상기 처리액 액적을 기판에 공급할 때에, 상기 기판지지기구에 지지된 기판의 표면으로부터 20밀리미터 미만의 거리를 두고 배치되는 것을 특징으로 하는 기판처리장치.
- 제1항에 있어서,상기 이류체노즐로부터 공급되는 액적의 상기 기판표면에서의 밀도가 매분 108 개/평방 밀리미터 이상이 되도록, 상기 케이싱에 공급되는 처리액 및 기체의 유량 및 상기 이류체노즐과 상기 기판표면과의 사이의 거리를 제어하는 콘트롤러를 더욱 포함하는 것을 특징으로 하는 기판처리장치.
- 제3항에 있어서,상기 콘트롤러는, 상기 이류체노즐로부터 공급되는 액적의 상기 기판표면에서의 밀도가, 매분 1.2× 108 개 /평방 밀리미터 이상이 되도록, 상기 케이싱에 공급되는 처리액 및 기체의 유량 및 상기 이류체노즐과 상기 기판표면과의 사이의 거리를 제어하는 것을 특징으로 하는 기판처리장치.
- 제1항에 있어서,상기 이류체노즐로부터 공급되는 액적의 볼륨 미디언 직경이 25 마이크로미터 이하인 것을 특징으로 하는 기판처리장치.
- 제1항에 있어서,상기 이류체노즐로부터 공급되는 액적의 기판표면에서의 도달영역의 지름이 5밀리미터 이상 15밀리미터 이하인 것을 특징으로 하는 기판처리장치.
- 제1항에 있어서,상기 이류체노즐은, 상기 케이싱 내에서의 기체도입구로부터 상기 기체토출구에 이르는 기체유로 중에 설치되어 상기 처리액토출구로부터 처리액토출방향을 따라 토출되는 처리액 흐름를 둘러싸는 소용돌이기류를 형성하기 위한 소용돌이기류형성부를 갖는 것을 특징으로 하는 기판처리장치.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2006-00017967 | 2006-01-26 | ||
JP2006017967 | 2006-01-26 | ||
JPJP-P-2006-00294470 | 2006-10-30 | ||
JP2006294470A JP4763575B2 (ja) | 2006-01-26 | 2006-10-30 | 基板処理装置および基板処理方法 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020070004706A Division KR100858581B1 (ko) | 2006-01-26 | 2007-01-16 | 기판처리장치 및 기판처리방법 |
Publications (2)
Publication Number | Publication Date |
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KR20080022163A KR20080022163A (ko) | 2008-03-10 |
KR100852025B1 true KR100852025B1 (ko) | 2008-08-13 |
Family
ID=38284339
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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KR1020070004706A KR100858581B1 (ko) | 2006-01-26 | 2007-01-16 | 기판처리장치 및 기판처리방법 |
KR1020080014344A KR100852025B1 (ko) | 2006-01-26 | 2008-02-18 | 기판처리장치 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020070004706A KR100858581B1 (ko) | 2006-01-26 | 2007-01-16 | 기판처리장치 및 기판처리방법 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20070169793A1 (ko) |
JP (1) | JP4763575B2 (ko) |
KR (2) | KR100858581B1 (ko) |
TW (1) | TWI340997B (ko) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100942588B1 (ko) * | 2008-04-18 | 2010-02-16 | 주식회사 에이앤디코퍼레이션 | 기판에 작용하는 충격을 감지하기 위한 기판처리장치와 기판처리방법 |
JP5261077B2 (ja) | 2008-08-29 | 2013-08-14 | 大日本スクリーン製造株式会社 | 基板洗浄方法および基板洗浄装置 |
CN102078866A (zh) * | 2009-11-26 | 2011-06-01 | 昆山厚声电子工业有限公司 | 薄膜片状基板的掩膜清洗烘干工艺 |
CN102463227A (zh) * | 2010-11-03 | 2012-05-23 | 北京中电科电子装备有限公司 | 一种清洗装置及清洗方法 |
KR101398759B1 (ko) | 2011-03-01 | 2014-05-27 | 다이닛뽕스크린 세이조오 가부시키가이샤 | 노즐, 기판처리장치, 및 기판처리방법 |
JP5732376B2 (ja) * | 2011-06-21 | 2015-06-10 | 東京エレクトロン株式会社 | 2流体ノズル及び基板液処理装置並びに基板液処理方法 |
DE102012103330A1 (de) * | 2012-03-29 | 2013-10-02 | solar-semi GmbH | Vorrichtung zum Entfernen einer Beschichtung von einem Substrat und Verfahren |
JP5787182B2 (ja) * | 2012-09-05 | 2015-09-30 | 株式会社デンソー | 洗浄方法、およびこれに用いる洗浄装置 |
US20140261572A1 (en) | 2013-03-15 | 2014-09-18 | Dainippon Screen Mfg.Co., Ltd. | Substrate treatment apparatus and substrate treatment method |
SG10201407598VA (en) | 2013-11-19 | 2015-06-29 | Ebara Corp | Substrate cleaning apparatus and substrate processing apparatus |
US9776216B2 (en) * | 2013-11-27 | 2017-10-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Dispensing apparatus and dispensing method |
KR102285832B1 (ko) * | 2014-07-25 | 2021-08-05 | 삼성전자주식회사 | 기판 처리 장치 및 기판 처리 방법 |
JP6512554B2 (ja) * | 2014-09-29 | 2019-05-15 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
CN104874500B (zh) * | 2015-06-04 | 2017-02-01 | 北京七星华创电子股份有限公司 | 一种二相流雾化清洗装置 |
KR102432858B1 (ko) * | 2015-09-01 | 2022-08-16 | 삼성전자주식회사 | 약액 공급 장치 및 이를 구비하는 반도체 처리 장치 |
JP6624609B2 (ja) * | 2016-02-15 | 2019-12-25 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
JP6915498B2 (ja) * | 2017-10-23 | 2021-08-04 | 東京エレクトロン株式会社 | ノズル待機装置、液処理装置及び液処理装置の運転方法並びに記憶媒体 |
JP7273660B2 (ja) * | 2019-08-30 | 2023-05-15 | キオクシア株式会社 | 半導体製造装置、および半導体装置の製造方法 |
JP2021048336A (ja) * | 2019-09-20 | 2021-03-25 | 三菱電機株式会社 | 処理液生成方法、処理液生成機構、半導体製造装置及び半導体製造方法 |
KR102389224B1 (ko) * | 2020-03-09 | 2022-04-21 | 주식회사 에이치에스하이테크 | 기판 세정용 2류체 노즐 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR0176734B1 (ko) * | 1995-12-20 | 1999-04-15 | 조장연 | 고압분사식 에칭법 및 그 장치 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0831435B2 (ja) * | 1986-09-29 | 1996-03-27 | 東京エレクトロン株式会社 | 基板の洗浄方法 |
JP3504023B2 (ja) * | 1995-05-26 | 2004-03-08 | 株式会社ルネサステクノロジ | 洗浄装置および洗浄方法 |
JP4074814B2 (ja) * | 2002-01-30 | 2008-04-16 | 大日本スクリーン製造株式会社 | 基板処理装置および基板処理方法 |
JP4222876B2 (ja) * | 2003-05-28 | 2009-02-12 | 大日本スクリーン製造株式会社 | 基板処理装置 |
US20040235308A1 (en) * | 2003-05-22 | 2004-11-25 | Dainippon Screen Mfg. Co., Ltd. | Substrate treatment method and sustrate treatment apparatus |
JP2005005469A (ja) * | 2003-06-11 | 2005-01-06 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
JP2005166792A (ja) * | 2003-12-01 | 2005-06-23 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP4464850B2 (ja) * | 2004-03-09 | 2010-05-19 | 株式会社ルネサステクノロジ | 基板洗浄用2流体ノズル及び基板洗浄装置 |
TWI251857B (en) * | 2004-03-09 | 2006-03-21 | Tokyo Electron Ltd | Two-fluid nozzle for cleaning substrate and substrate cleaning device |
JP2005288390A (ja) * | 2004-04-02 | 2005-10-20 | Kyoritsu Gokin Co Ltd | 二流体ノズル及び噴霧方法 |
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2006
- 2006-10-30 JP JP2006294470A patent/JP4763575B2/ja active Active
-
2007
- 2007-01-16 KR KR1020070004706A patent/KR100858581B1/ko active IP Right Grant
- 2007-01-23 TW TW096102461A patent/TWI340997B/zh active
- 2007-01-24 US US11/626,673 patent/US20070169793A1/en not_active Abandoned
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2008
- 2008-02-18 KR KR1020080014344A patent/KR100852025B1/ko active IP Right Grant
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR0176734B1 (ko) * | 1995-12-20 | 1999-04-15 | 조장연 | 고압분사식 에칭법 및 그 장치 |
Also Published As
Publication number | Publication date |
---|---|
JP2007227878A (ja) | 2007-09-06 |
KR20070078373A (ko) | 2007-07-31 |
TW200737333A (en) | 2007-10-01 |
KR100858581B1 (ko) | 2008-09-17 |
US20070169793A1 (en) | 2007-07-26 |
TWI340997B (en) | 2011-04-21 |
KR20080022163A (ko) | 2008-03-10 |
JP4763575B2 (ja) | 2011-08-31 |
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