KR100811448B1 - Cleaning system for semiconductor process - Google Patents
Cleaning system for semiconductor process Download PDFInfo
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- KR100811448B1 KR100811448B1 KR1020030102212A KR20030102212A KR100811448B1 KR 100811448 B1 KR100811448 B1 KR 100811448B1 KR 1020030102212 A KR1020030102212 A KR 1020030102212A KR 20030102212 A KR20030102212 A KR 20030102212A KR 100811448 B1 KR100811448 B1 KR 100811448B1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
본 발명은 반도체용 세정시스템에 관한 것으로서, 웨이퍼가 탑재되는 척; 상기 웨이퍼가 탑재된 척을 수평 또는 수직으로 회전이동시키기 위한 제1 모터; 브러쉬 암; 상기 브러쉬 암을 상하 또는 좌우로 구동시키는 제2 및 제3 모터; 상기 웨이퍼를 세정하기 위하여 브러쉬를 회전시키는 제4 모터; 상기 웨이퍼를 암모니아 또는 불화수소 세정처리하기 위해 브러쉬 암에 각각 설치된 노즐; 및 상기 브러쉬 암에 초순수 노즐을 좌우로 이동시키기 위한 제5모터 구비한다.The present invention relates to a semiconductor cleaning system, comprising: a chuck on which a wafer is mounted; A first motor for horizontally or vertically rotating the chuck on which the wafer is mounted; Brush arm; Second and third motors for driving the brush arm up and down or left and right; A fourth motor for rotating the brush to clean the wafer; Nozzles each installed on a brush arm for cleaning the wafer with ammonia or hydrogen fluoride; And a fifth motor for moving the ultrapure water nozzle from side to side in the brush arm.
본 발명에 의해서 불화수소와 암모니아 배스를 합하여 클리너의 부피를 줄이고, 또한 웨이퍼의 작업효율을 향상시키는 효과가 있다.According to the present invention, the hydrogen fluoride and the ammonia bath are combined to reduce the volume of the cleaner and improve the working efficiency of the wafer.
세정, 불화수소, 암모니아, 초순수, 틸팅Cleaning, hydrogen fluoride, ammonia, ultrapure water, tilting
Description
도1은 종래의 IPEC 776장비의 평면도.1 is a plan view of a conventional IPEC 776 equipment.
도2는 본 발명에 의한 암모니아와 불화수소 세정처리 방법을 도시한 도면.2 is a view showing a method for cleaning ammonia and hydrogen fluoride according to the present invention.
도3은 본 발명에 의한 초순수 세정처리 방법을 도시한 도면.
3 is a view showing an ultrapure water cleaning treatment method according to the present invention.
본 발명은 반도체 공정용 세정시스템에 관한 것으로서, 특히 불화수소와 암모니아 마즐을 합하여 클리너의 부피를 줄이고 또한 웨이퍼의 작업 효율을 향상시키기 위한 세정시스템에 관한 것이다.BACKGROUND OF THE
도1은 반도체 공정에서 사용되는 IPEC 776장비의 평면도를 나타낸 것으로 이 장비는 폴리싱부와 클리너부로 구성되어 있다.1 shows a plan view of an IPEC 776 device used in a semiconductor process, which comprises a polishing unit and a cleaner unit.
이 장비중 클리너부는 3개의 마즐로 구성되며, 폴리싱이 끝난 웨이퍼는 BU#1(Brush Unit #1)으로 들어온다. BU#1에서는 암모니아를 웨이퍼 표면에 분사하고 브러쉬를 사용하여 세정한다. 이후 암모니아 세정 프로세스가 끝나면 R4(Robot 4)가 웨이퍼를 로딩하여 다음 마즐인 BU#2로 이동시킨다. 이 마즐은 불화수소(HF)를 표면에 분사해주며 브러쉬를 이용하여 세정하며, BU에서 세정이 종료된 웨이퍼는 R4에 의해 SRD(Spin Rince Dry)로 이동된다. SRD 척에 놓여진 웨이퍼는 하강하여 회전함으로써 건조된다.The cleaner part consists of three mazzles, and the polished wafer enters BU # 1 (Brush Unit # 1). In
상기와 같이 종래의 기술은 암모니아 세정 프로세서와 불화수소 세정 프로세서가 분리되어 클리너의 부피가 커진다는 단점이 있다.
As described above, the conventional technology has a disadvantage in that the ammonia cleaning processor and the hydrogen fluoride cleaning processor are separated to increase the volume of the cleaner.
따라서, 본 발명이 이루고자 하는 기술적 과제는 상기한 종래의 기술이 가지는 분리된 세정 프로세스를 불화수소와 암모니아 마즐을 합하여 하나의 마즐에서 수행될 수 있도록 하는 세정시스템을 제공하는 데 있다.
Accordingly, the technical problem to be achieved by the present invention is to provide a cleaning system that allows the separate cleaning process of the prior art described above to be performed in one maze by combining hydrogen fluoride and ammonia mazel.
상기한 기술적 과제를 달성하기 위하여, 반도체 세정시스템에 있어서, 웨이퍼가 탑재되는 척; 상기 웨이퍼가 탑재된 척을 수평 또는 수직으로 회전이동시키기 위한 제1 모터; 브러쉬 암; 상기 브러쉬 암을 상하 또는 좌우로 구동시키는 제2 및 제3 모터; 상기 웨이퍼를 세정하기 위하여 브러쉬를 회전시키는 제4 모터; 상기 웨이퍼를 암모니아 또는 불화수소 세정처리하기 위해 브러쉬 암에 각각 설치된 노즐; 및 상기 브러쉬 암에 초순수 노즐을 좌우로 이동시키기 위한 제5모터를 구비하는 것을 특징으로 한다. In order to achieve the above technical problem, a semiconductor cleaning system comprising: a chuck on which a wafer is mounted; A first motor for horizontally or vertically rotating the chuck on which the wafer is mounted; Brush arm; Second and third motors for driving the brush arm up and down or left and right; A fourth motor for rotating the brush to clean the wafer; Nozzles each installed on a brush arm for cleaning the wafer with ammonia or hydrogen fluoride; And a fifth motor for moving the ultrapure water nozzle from side to side in the brush arm.
또한, 웨이퍼가 탑재되는 척에는 웨이퍼에 충격이 가해지는 것을 완화하기 위한 쿠션이 추가로 설치될 수 있다.In addition, the chuck on which the wafer is mounted may be further provided with a cushion for mitigating impact on the wafer.
또한, 초순수 노즐은 중앙에는 직선 초순수 노즐과 직선 초순수 노즐의 좌우에 설치되는 분사형 노즐로 구성되는 것을 특징으로 하며, 세정대상인 웨이퍼는 초순수 노즐에 대하여 45도 각도로 배치되어 세정되는 것을 특징으로 한다.In addition, the ultrapure water nozzle is characterized in that the center is composed of a spray type nozzle which is installed on the left and right of the linear ultrapure water nozzle and the linear ultrapure water nozzle, the wafer to be cleaned is disposed at a 45 degree angle with respect to the ultrapure water nozzle is characterized in that the cleaning.
본 발명의 상기 목적과 기술적 구성 및 그에 따른 작용효과에 관한 자세한 사항은 본 발명의 바람직한 실시예를 도시하고 있는 도면을 참조한 이하 상세한 설명에 의해 보다 명확하게 이해될 것이다.Details of the above object and technical configuration of the present invention and the effects thereof according to the present invention will be more clearly understood by the following detailed description with reference to the drawings showing preferred embodiments of the present invention.
이하, 도2 및 도3을 참조하여 본 발명의 실시예에 대하여 상세히 설명한다.Hereinafter, embodiments of the present invention will be described in detail with reference to FIGS. 2 and 3.
도2는 본 발명에 의한 암모니아와 불화수소 세정처리 방법을 도시한 도면이며, 도3은 본 발명에 의한 초순수 세정처리 방법을 도시한 것이다.2 is a view showing a method for washing ammonia and hydrogen fluoride according to the present invention, and FIG. 3 shows a method for washing ultrapure water according to the present invention.
본 발명에 의한 반도체용 세정장치는 마즐과 SRD로 구성된다.The semiconductor cleaning apparatus according to the present invention is composed of a mazzle and an SRD.
우선, 웨이퍼가 들어오면 웨이퍼는 척위에 안착되며, 웨이퍼 척은 브러쉬의 눌림에 의한 충격을 완화하기 위해 웨이퍼가 놓여지는 핀위에 쿠션이 설치되어 있다.First, when the wafer enters, the wafer is seated on the chuck, and the wafer chuck is provided with a cushion on the pin on which the wafer is placed to mitigate the impact of the brush being pressed.
웨이퍼는 상부에서 척의 회전모터(3)에 의해 천천히 회전된다. 브러쉬 암(4)은 웨이퍼 포지션으로 들어오고 모터에 의해 웨이퍼 표면까지 다운된다. The wafer is slowly rotated by the rotary motor 3 of the chuck at the top.
다운되는 동시에 브러쉬 모터(5)에 의해 회전을 하고 암의 앞부분에 달려있는 노즐(7)을 통하여 초순수가 발사된다. 이후 초순수 발사가 정지된 후 암모니아 노즐(6)에서 암모니아가 공급되어 암모니아 세정을 한다. 암모니아 노즐공정이 끝 나면 암의 좌측부분에서 불화수소가 공급되어 불화수소 세정을 실시한다.At the same time it is turned down by the
브러쉬는 불화수소 세정공정을 마지막으로 세정공정을 끝낸다.The brush finishes the hydrogen fluoride cleaning process and finally the cleaning process.
이후 척은 회전을 멈추고 틸팅하여 초순수 바 방향으로 45도 꺽이고 회전을 시작하여 초순수에 의한 세정 및 젖음공정을 시작한다. 이를 위해 초순수 바는 모터에 의해 웨이퍼 포지션으로 이동되며, 웨이퍼의 제일 끝에 온 초순수 바는 초순수를 쏘아 웨이퍼 표면에 묻은 케미칼을 제거한다. 웨이퍼가 45도 각도로 꺾여 있기 때문에 웨이퍼를 회전 시킴으로써 웨이퍼 전면을 세정하게 된다.After that, the chuck stops the rotation and tilts to bend 45 degrees in the direction of the ultrapure water bar and starts the rotation to start the cleaning and wetting process by ultrapure water. To do this, the ultrapure water bar is moved to the wafer position by a motor, and the ultrapure water bar at the end of the wafer shoots ultrapure water to remove chemicals from the wafer surface. Since the wafer is bent at an angle of 45 degrees, the entire surface of the wafer is cleaned by rotating the wafer.
초순수 노즐은 중앙엔 직선으로 쏘는 노즐이 배치되어 웨이퍼를 때려 세척하고, 직선 초순수 노즐의 좌우에는 분사식 노즐이 배치되어 있어 웨이퍼표면을 적셔주는 역할을 한다.Ultrapure water nozzles are arranged with a nozzle that shoots in a straight line in the center to wash the wafer, and spray nozzles are disposed on the left and right sides of the linear ultrapure water nozzle to wet the surface of the wafer.
또한 초순수 바는 초순수를 분사하면서 좌우로 구동시켜 웨이퍼 표면을 세척한 후 홈 위치로 이동된다. 이후 웨이퍼는 회전을 멈추고 틸팅하여 수평을 유지하도록 하며, 그후 모든 모터는 세정에 사용된 구성을 홈위치로 이동시키고, 웨이퍼를 언로딩시킨다.The ultrapure water bar is also driven to the left and right while spraying ultrapure water to clean the wafer surface and then moved to the home position. The wafer then stops rotating and tilts to stay horizontal, after which all motors move the configuration used for cleaning to the home position and unload the wafer.
상세히 설명된 본 발명에 의하여 본 발명의 특징부를 포함하는 변화들 및 변형들이 당해 기술 분야에서 숙련된 보통의 사람들에게 명백히 쉬워질 것임이 자명하다. 본 발명의 그러한 변형들의 범위는 본 발명의 특징부를 포함하는 당해 기술 분야에 숙련된 통상의 지식을 가진 자들의 범위 내에 있으며, 그러한 변형들은 본 발명의 청구항의 범위 내에 있는 것으로 간주된다.
It will be apparent that changes and modifications incorporating features of the invention will be readily apparent to those skilled in the art by the invention described in detail. It is intended that the scope of such modifications of the invention be within the scope of those of ordinary skill in the art including the features of the invention, and such modifications are considered to be within the scope of the claims of the invention.
상술한 바와 같이 본 발명의 반도체용 세정시스템에 의해서 불화수소와 암모니아 배스를 합하여 클리너의 부피를 줄이고, 또한 웨이퍼의 작업효율을 향상시킬 수 있다.As described above, according to the semiconductor cleaning system of the present invention, the hydrogen fluoride and the ammonia bath are combined to reduce the volume of the cleaner and improve the working efficiency of the wafer.
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR960015790B1 (en) * | 1993-03-22 | 1996-11-21 | 현대전자산업 주식회사 | Wafer scrubber apparatus of auto-controll position |
JPH09223682A (en) * | 1996-02-19 | 1997-08-26 | Shibaura Eng Works Co Ltd | Cleaning apparatus and its method |
JP2000070875A (en) * | 1998-08-28 | 2000-03-07 | Dainippon Screen Mfg Co Ltd | Base cleaning apparatus and base cleaning |
JP2000223460A (en) * | 1999-01-28 | 2000-08-11 | Dainippon Screen Mfg Co Ltd | Wafer cleaning apparatus |
KR100338765B1 (en) | 1999-09-27 | 2002-05-30 | 윤종용 | Wafer cleaning apparatus |
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- 2003-12-31 KR KR1020030102212A patent/KR100811448B1/en not_active IP Right Cessation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR960015790B1 (en) * | 1993-03-22 | 1996-11-21 | 현대전자산업 주식회사 | Wafer scrubber apparatus of auto-controll position |
JPH09223682A (en) * | 1996-02-19 | 1997-08-26 | Shibaura Eng Works Co Ltd | Cleaning apparatus and its method |
JP2000070875A (en) * | 1998-08-28 | 2000-03-07 | Dainippon Screen Mfg Co Ltd | Base cleaning apparatus and base cleaning |
JP2000223460A (en) * | 1999-01-28 | 2000-08-11 | Dainippon Screen Mfg Co Ltd | Wafer cleaning apparatus |
KR100338765B1 (en) | 1999-09-27 | 2002-05-30 | 윤종용 | Wafer cleaning apparatus |
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